公开(公告)号：US07778509B2

公开(公告)日：2010-08-17

申请号：US11224320

申请日：2005-09-13

Applicant: Akiko Gomyo ,  Jun Ushida

Inventor： Akiko Gomyo ,  Jun Ushida

IPC: G02B6/26

CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

Abstract: Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

Abstract translation: 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US07359606B2

公开(公告)日：2008-04-15

申请号：US10543649

申请日：2003-12-22

Applicant: Jun Ushida ,  Hirohito Yamada

Inventor： Jun Ushida ,  Hirohito Yamada

IPC: G02B6/10

CPC classification number: G02F1/365 ,  G02F1/3515 ,  G02F2202/32

Abstract: In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the structure (33) is arranged in the vicinity of the structure (33) to control the directivity of localization and propagation of an electromagnetic field, light emission and light reception in a spatial region including the above structures in the multi-dimensional photonic crystals, in order to permit functional operations to be realized.

Abstract translation: 在包括多维光子晶体的光电路中，其中光电路具有具有天然共振频率的诸如发光部件或光接收部件的结构（33），具有天然共振的另一结构（34） 与结构（33）的固有谐振频率稍微不同的频率被布置在结构（33）附近，以控制包括上述的空间区域中的电磁场，发光和光接收的定位和传播的方向性 多维光子晶体中的结构，以便实现功能操作。

公开(公告)号：US08873895B2

公开(公告)日：2014-10-28

申请号：US13582841

申请日：2011-03-01

Applicant: Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

Inventor： Junichi Fujikata ,  Motofumi Saitoh ,  Jun Ushida ,  Akio Toda

IPC: G02F1/035 ,  H01L21/02

CPC classification number: G02F1/035 ,  G02F1/025 ,  H01L21/02

Abstract: To provide an optical modulator having a reduced size and reduced power consumption and capable of being easily connected to a waveguide and a method of manufacturing the optical modulator. The optical modulator has at least semiconductor layer (8) having a rib-shaped portion and doped so as to be of a first conduction type, dielectric layer (11) laid on first-conduction-type semiconductor layer (8), and semiconductor layer (9) laid on dielectric layer (11), having the width at the side opposite from dielectric layer (11) increased relative to the width of the rib-shaped portion, and doped so as to be of a second conduction type.

Abstract translation: 提供具有减小的尺寸和降低的功率消耗并且能够容易地连接到波导的光学调制器和制造光学调制器的方法。 光调制器至少具有肋状部分并掺杂成第一导电类型的半导体层（8），布置在第一导电型半导体层（8）上的电介质层（11）和半导体层 放置在电介质层（11）上的与介电层（11）相对的宽度相对于肋状部分的宽度增加并且掺杂成第二导电类型的放电层（9）。

公开(公告)号：US20130170793A1

公开(公告)日：2013-07-04

申请号：US13823027

申请日：2011-09-21

Applicant: Jun Ushida ,  Shigeru Nakamura

Inventor： Jun Ushida ,  Shigeru Nakamura

IPC: G02B6/26

CPC classification number: G02B6/26 ,  G02B6/1228 ,  G02B6/305

Abstract: The present invention provides a small optical waveguide structure capable of converting the spot size of light, and capable of reducing the conversion loss when compared under the condition of the same waveguide length and performing an optical conversion with high efficiency. An optical waveguide structure (100) includes a base waveguide (110) including a taper section (111) whose width becomes continuously narrower from one side toward another side, and a narrow-width section (112) that is consecutively connected to a narrow-width side of the taper section (111) and extends toward the another side. In the optical waveguide structure (100), at least three-layered upper waveguides (121 to 123) each of which has a planar shape smaller than the taper section (111) and includes a planar-view-roughly-wedge-shaped section whose width becomes continuously narrower from the one side toward the another side at least on a tip side are stacked above the taper section (111) of the base waveguide (110) in such a manner that the planar shape becomes successively smaller from the base waveguide side (110).

Abstract translation: 本发明提供了一种能够转换光斑尺寸的小型光波导结构，并且在相同波导长度的条件下进行比较并能够以高效率进行光转换时，能够降低转换损耗。 光波导结构（100）包括：基底波导（110），其包括宽度从一侧朝向另一侧连续变窄的锥形部（111），以及窄宽度部（112），其连续地连接到狭窄部 锥形部分（111）的宽度侧并且朝向另一侧延伸。 在光波导结构（100）中，至少三层上波导（121〜123）具有比锥形部（111）小的平面形状，并且具有俯视大致楔形的截面， 宽度从一侧朝向另一侧连续变窄，至少在前端侧以基板波导（110）的锥形部（111）的上方层叠，使得平面形状从基底波导侧连续变小 （110）。

公开(公告)号：US08422837B2

公开(公告)日：2013-04-16

申请号：US12919546

申请日：2009-02-26

Applicant: Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

Inventor： Kenichi Nishi ,  Junichi Fujikata ,  Jun Ushida ,  Daisuke Okamoto

IPC: H01L33/62

CPC classification number: G02B6/12002 ,  G02B6/43 ,  H01L21/76898 ,  H01L23/481 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/08145 ,  H01L2224/80001 ,  H01L2224/80357 ,  H01L2224/80895 ,  H01L2224/80896 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/05552

Abstract: A semiconductor device comprises a semiconductor layer having a semiconductor integrated circuit, which is for processing an electrical signal, on a semiconductor substrate and an optical interconnect layer for transmitting an optical signal are joined. Control of modulation of the optical signal transmitted in the optical interconnect layer is performed by an electrical signal from the semiconductor layer, and an electrical signal generated by reception of light in the optical interconnect layer is transmitted to the semiconductor layer. The optical interconnect layer is disposed on the underside of the semiconductor substrate.

Abstract translation: 半导体器件包括具有用于处理电信号的半导体集成电路的半导体层，半导体衬底和用于发射光信号的光互连层的半导体层。 通过来自半导体层的电信号执行在光学互连层中发送的光信号的调制的控制，并且通过在光学互连层中的光的接收而产生的电信号被传输到半导体层。 光学互连层设置在半导体衬底的下侧。

公开(公告)号：US20120257850A1

公开(公告)日：2012-10-11

申请号：US13395329

申请日：2010-06-08

Applicant: Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

Inventor： Junichi Fujikata ,  Jun Ushida ,  Akio Toda ,  Motofumi Saitoh

IPC: G02F1/035

CPC classification number: G02F1/2257 ,  G02F1/025 ,  G02F2001/0152 ,  G02F2201/066 ,  G02F2201/07 ,  G02F2202/105

Abstract: A downsized, low-power electro-optical modulator that achieves reducing both of the additional resistance in the modulation portion and the optical loss each caused by electrodes at the same time is provided. The electro-optical modulator includes a rib waveguide formed by stacking a second semiconductor layer 9 having a different conductivity type from a first semiconductor layer 8 on the first semiconductor layer 8 via a dielectric film 11, and the semiconductor layers 8 and 9 are connectable to an external terminal via highly-doped portions 4 and 10, respectively. In a region in the vicinity of contact surfaces of the semiconductor layers 8 and 9 with the dielectric film 11, a free carrier is accumulated, removed, or inverted by an electrical signal from the external terminal, and whereby a concentration of the free carrier in an electric field region of an optical signal is modulated, so that a phase of the optical signal can be modulated. At least one of the semiconductor layers 8 and 9 is wider than the stacked portion. At least one of the highly-doped portions 4 and 10 is formed outside the stacked portion.

Abstract translation: 提供了一种小型化的低功率电光调制器，其实现了减少调制部分中的附加电阻和由电极同时引起的光损耗。 电光调制器包括通过电介质膜层叠具有与第一半导体层8上的第一半导体层8不同的导电类型的第二半导体层9形成的肋波导，并且半导体层8和9可连接到 分别经由高掺杂部分4和10的外部端子。 在具有电介质膜11的半导体层8和9的接触表面附近的区域中，通过来自外部端子的电信号累积，去除或反转自由载流子，并且由此使自由载流子的浓度 调制光信号的电场区域，使得可以调制光信号的相位。 半导体层8和9中的至少一个比层叠部分宽。 高度掺杂部分4和10中的至少一个形成在堆叠部分的外部。

公开(公告)号：US08269303B2

公开(公告)日：2012-09-18

申请号：US12919638

申请日：2009-03-09

Applicant: Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

Inventor： Junichi Fujikata ,  Toru Tatsumi ,  Akihito Tanabe ,  Jun Ushida ,  Daisuke Okamoto ,  Kenichi Nishi

IPC: H01L31/105

CPC classification number: H01L31/105 ,  G02B6/12004 ,  G02B6/4204 ,  G02B6/4214 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

Abstract: The lattice mismatching between a Ge layer and a Si layer is as large as about 4%. Thus, when the Ge layer is grown on the Si layer, penetration dislocation is introduced to cause leakage current at the p-i-n junction. Thereby, the photo-detection sensitivity is reduced, and the reliability of the element is also lowered. Further, in the connection with a Si waveguide, there are also problems of the reflection loss due to the difference in refractive index between Si and Ge, and of the absorption loss caused by a metal electrode. In order to solve said problems, according to the present invention, there is provided a vertical type pin-SiGe photodiode having a structure which is embedded in a groove formed in a part of a Si layer, in which a p-type or n-type doped layer is formed in a lower section of the groove, and in which a i-SiGe layer having a rectangular shape or a reverse tapered shape is formed on a layered structure formed by laminating a i-Si layer and a SiGe buffer layer on the lower section and the side wall of the groove. Further, in an optical connection section with a Si waveguide, impedance matching is effected by the layered structure composed of the i-Si layer and the SiGe buffer layer, and an upper metal layer is separated therefrom so that a poly-Si bridge structure is employed to electrically connect the upper metal layer therewith.

Abstract translation: Ge层与Si层之间的晶格失配大至4％左右。 因此，当Ge层在Si层上生长时，引入穿透位错以在p-i-n结处引起漏电流。 因此，光检测灵敏度降低，并且元件的可靠性也降低。 此外，在与Si波导的连接中，还存在由于Si和Ge之间的折射率的差异以及由金属电极引起的吸收损耗的反射损耗的问题。 为了解决所述问题，根据本发明，提供了一种垂直型pin-SiGe光电二极管，其具有嵌入到形成在Si层的一部分中的凹槽中的结构，其中p型或n- 在沟槽的下部形成有型掺杂层，其中在通过层叠i-Si层和SiGe缓冲层而形成的层叠结构上形成具有矩形或倒锥形的i-SiGe层 凹槽的下部和侧壁。 此外，在具有Si波导的光学连接部中，通过由i-Si层和SiGe缓冲层构成的层叠结构实现阻抗匹配，并且将上部金属层与其分离，使得多Si桥结构 用于将上部金属层电连接到其上。

公开(公告)号：US07715665B2

公开(公告)日：2010-05-11

申请号：US12032392

申请日：2008-02-15

Applicant: Jun Ushida ,  Hirohito Yamada

Inventor： Jun Ushida ,  Hirohito Yamada

IPC: G02B6/12 ,  G02B6/00 ,  G02B6/26 ,  G02B6/28 ,  G02B6/30 ,  G02B6/02 ,  G02B6/10 ,  G02B1/10 ,  G02F1/00 ,  H01S3/00

CPC classification number: G02F1/365 ,  G02F1/3515 ,  G02F2202/32

Abstract: In an optical circuit including multi-dimensional photonic crystals, in which the optical circuit has a structure (33), such as a light emitting member or a light receiving member, having a natural resonance frequency, another structure (34) having a natural resonance frequency slightly differing from the natural resonance frequency of the structure (33) is arranged in the vicinity of the structure (33) to control the directivity of localization and propagation of an electromagnetic field, light emission and light reception in a spatial region including the above structures in the multi-dimensional photonic crystals, in order to permit functional operations to be realized.

Abstract translation: 在包括多维光子晶体的光电路中，其中光电路具有具有天然共振频率的诸如发光部件或光接收部件的结构（33），具有天然共振的另一结构（34） 与结构（33）的固有谐振频率稍微不同的频率被布置在结构（33）附近，以控制在包括上述的空间区域中的电磁场，发光和光接收的定位和传播的方向性 多维光子晶体中的结构，以便实现功能操作。

公开(公告)号：US20060039649A1

公开(公告)日：2006-02-23

申请号：US11224320

申请日：2005-09-13

Applicant: Akiko Gomyo ,  Jun Ushida

Inventor： Akiko Gomyo ,  Jun Ushida

IPC: G02B6/26 ,  G02B6/10

CPC classification number: B82Y20/00 ,  G02B6/1225 ,  G02B6/1228

Abstract: Disclosed in a method and a device in which a wave number of light in the waveguide mode of a photonic crystal optical waveguide is matched with that of the incident light, or a intensity ratio of electric field to magnetic field of the light in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light, and furthermore, in addition to the method above, the distribution of light intensity on the incident end surface in the waveguide mode of the photonic crystal optical waveguide is matched with that of the incident light. A photonic crystal optical waveguide and channel optical waveguide are joined together, and the structure of the channel optical waveguide is wedge shaped in the joint section.

Abstract translation: 公开了一种方法和装置，其中光子晶体光波导的波导模式中的波数与入射光的波数相匹配，或波导模式中的光的电场与磁场的强度比 光子晶体光波导的光强度与入射光的匹配，此外，除了上述方法之外，光子晶体光波导的波导模式中的入射端面上的光强度分布与 事件光。 光子晶体光波导和通道光波导连接在一起，并且通道光波导的结构在接合部分是楔形的。

公开(公告)号：US20140105544A1

公开(公告)日：2014-04-17

申请号：US14119746

申请日：2012-05-10

Applicant: Jun Ushida ,  Shigeru Nakamura ,  Shigeki Takahashi

Inventor： Jun Ushida ,  Shigeru Nakamura ,  Shigeki Takahashi

IPC: G02B6/24

CPC classification number: G02B6/243 ,  G02B6/12 ,  G02B2006/12126

Abstract: An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 1019 -1020 cm−3. The existence of this impurity causes absorption of light in the optical absorption core (103).

Abstract translation: 光波导型光学终端器形成至少包括形成在包层（102）上的光吸收芯（103）的光波导结构，其包括由1019cm-3以上的杂质为硅的硅构成的部分 并且通过与包括由硅构成的芯（105）的光波导光学连接而被使用。 光吸收芯（103）足够，只要至少掺杂约1019cm-3的杂质即可。 例如，其杂质浓度足以满足1019-1020cm-3的范围。 这种杂质的存在导致光吸收芯（103）中的光的吸收。