公开(公告)号：US07531469B2

公开(公告)日：2009-05-12

申请号：US11681313

申请日：2007-03-02

Applicant: Kartik Ramaswamy ,  Seon-Mee Cho ,  Tsutomu Tanaka ,  Majeed A. Foad

Inventor： Kartik Ramaswamy ,  Seon-Mee Cho ,  Tsutomu Tanaka ,  Majeed A. Foad

IPC: H01L21/00

CPC classification number: C23C14/48 ,  C23C14/54 ,  H01J37/321 ,  H01J37/32412 ,  H01J37/32935

Abstract: The present invention generally provides methods and apparatus for controlling ion dosage in real time during plasma processes. In one embodiment, ion dosages may be controlled using in-situ measurement of the plasma from a mass distribution sensor combined with in-situ measurement from an RF probe.

Abstract translation: 本发明通常提供了在等离子体处理期间实时控制离子剂量的方法和装置。 在一个实施方案中，离子剂量可以使用来自与来自RF探针的原位测量组合的质量分布传感器等离子体进行原位测量来控制。

公开(公告)号：US20090025878A1

公开(公告)日：2009-01-29

申请号：US11828568

申请日：2007-07-26

Applicant: Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

Inventor： Shahid Rauf ,  Kenneth S. Collins ,  Kallol Bera ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Steven C. Shannon ,  Lawrence Wong ,  Satoru Kobayashi ,  Troy S. Detrick ,  James P. Cruse

IPC: H01L21/306

CPC classification number: H01J37/16 ,  H01J37/20 ,  H01J37/32082 ,  H01J37/32623 ,  H01J37/32697 ,  H01J37/32834

Abstract: RF ground return current flow is diverted away from asymmetrical features of the reactor chamber by providing bypass current flow paths. One bypass current flow path avoids the pumping port in the chamber floor, and comprises a conductive symmetrical grill extending from the side wall to the grounded pedestal base. Another bypass current flow path avoids the wafer slit valve, and comprises an array of conductive straps bridging the section of the sidewall occupied by the slit valve.

Abstract translation: 通过提供旁路电流流动路径，RF接地回流电流从反应室的不对称特征转向。 一个旁路电流流动路径避免了室底部中的泵送端口，并且包括从侧壁延伸到接地基座的导电对称格栅。 另一个旁路电流流动路径避免了晶片狭缝阀，并且包括桥接由狭缝阀占据的侧壁部分的导电带阵列。

公开(公告)号：US20080179181A1

公开(公告)日：2008-07-31

申请号：US11733984

申请日：2007-04-11

Applicant: KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

Inventor： KENNETH S. COLLINS ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Douglas A. Buchberger ,  Shahid Rauf ,  Kallol Bera ,  Lawrence Wong ,  Walter R. Merry ,  Matthew L. Miller ,  Steven C. Shannon ,  Andrew Nguyen ,  James P. Cruse ,  James Carducci ,  Troy S. Detrick ,  Subhash Deshmukh ,  Jennifer Y. Sun

IPC: H05H1/00

CPC classification number: H01J37/32174 ,  H01J37/32091 ,  H01J37/32165

Abstract: A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1 to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.

Abstract translation: 用于在等离子体反应器室中处理工件的方法包括通过室的电极之一将RFF功率以第一VHF频率f 1耦合到等离子体，并且提供用于RF电流的中心接地返回路径，其直接通过天花板电极 工件支撑电极为频率f 1。 该方法还包括提供可变高度边缘接地环形元件，并为频率f 1提供通过边缘接地环形元件的接地返回路径。 该方法通过控制可变高度边缘接地环形元件之间的距离和（a）天花板电极的高度或（b）工件支撑电极的高度来控制等离子体离子密度分布的均匀性。

公开(公告)号：US20080179008A1

公开(公告)日：2008-07-31

申请号：US11685772

申请日：2007-03-14

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Andrew Nguyen ,  Ajit Balakrishna ,  David Palagashvili ,  James P. Cruse ,  Jennifer Y. Sun ,  Valentin N. Todorov ,  Shahid Rauf ,  Kartik Ramaswamy ,  Gerhard M. Schneider ,  Imad Yousif ,  Martin Jeffrey Salinas

IPC: H01L21/306

CPC classification number: H01L21/68764 ,  H01J37/32357 ,  H01J37/32366 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/68728

Abstract: A reactor is provided for removing polymer from a backside of a workpiece. The reactor includes a vacuum chamber having a ceiling, a floor and a cylindrical side wall. A workpiece support apparatus within the chamber is configured to support a workpiece thereon, so that the workpiece has its front side facing the ceiling. The support apparatus leaves at least an annular periphery of the backside of the workpiece exposed. A confinement member defines a narrow gap with the outer edge of the workpiece, the narrow gap being on the order of about 1% of workpiece diameter, the narrow gap corresponding to a boundary dividing the chamber between an upper process zone and a lower process zone. A vacuum pump is coupled to the lower process zone. A lower external plasma-generating chamber introduces a plasma by-product into the lower process zone and a supply of a polymer etch precursor gas coupled to the lower external plasma-generating chamber. An upper external plasma-generating chamber is coupled to introduce a plasma by-product into the upper process zone and a supply of a scavenger species precursor gas coupled to the upper external plasma-generating chamber.

Abstract translation: 提供反应器用于从工件的背面去除聚合物。 反应器包括具有天花板，地板和圆柱形侧壁的真空室。 室内的工件支撑装置构造成在其上支撑工件，使得工件的前侧面向天花板。 支撑装置离开被暴露的工件的背面的至少一个环形周边。 约束构件与工件的外边缘限定窄间隙，窄间隙约为工件直径的约1％，窄间隙对应于在上加工区和下加工区之间划分腔室的边界 。 真空泵联接到下部处理区。 较低的外部等离子体发生室将等离子体副产物引入下部工艺区域中，并且提供耦合到下部外部等离子体产生室的聚合物蚀刻前体气体。 耦合上部外部等离子体产生室以将等离子体副产物引入上部工艺区域中，并且供应与上部外部等离子体产生室耦合的清除剂物质前体气体。

公开(公告)号：US20080044960A1

公开(公告)日：2008-02-21

申请号：US11901969

申请日：2007-09-18

Applicant: Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

Inventor： Amir Al-Bayati ,  Kenneth Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Biagio Gallo ,  Andrew Nguyen

IPC: H01L21/84

CPC classification number: H01J37/321 ,  H01L29/66795 ,  H01L29/66803 ,  H01L29/7843 ,  H01L29/785 ,  H01L29/78618

Abstract: A process for conformally doping through the vertical and horizontal surfaces of a 3-dimensional vertical transistor in a semiconductor-on-insulator structure employs an RF oscillating torroidal plasma current to perform either conformal ion implantation, or conformal deposition of a dopant-containing film which can then be heated to drive the dopants into the transistor. Some embodiments employ both conformal ion implantation and conformal deposition of dopant containing films, and in those embodiments in which the dopant containing film is a pure dopant, the ion implantation and film deposition can be performed simultaneously.

Abstract translation: 通过绝缘体上半导体结构中的三维垂直晶体管的垂直和水平表面进行保形掺杂的工艺采用RF振荡环形等离子体电流来执行保形离子注入或含掺杂剂膜的共形沉积 然后可以加热以将掺杂剂驱动到晶体管中。 一些实施例采用包含掺杂剂的膜的共形离子注入和共形沉积，并且在其中含掺杂剂的膜是纯掺杂剂的那些实施例中，可以同时执行离子注入和膜沉积。

公开(公告)号：US07320734B2

公开(公告)日：2008-01-22

申请号：US10646527

申请日：2003-08-22

Applicant: Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

Inventor： Kenneth S. Collins ,  Hiroji Hanawa ,  Kartik Ramaswamy ,  Andrew Nguyen ,  Amir Al-Bayati ,  Biagio Gallo ,  Gonzalo Antonio Monroy

IPC: C23C16/00 ,  C23F1/00

CPC classification number: H01J37/32082 ,  H01J37/321

Abstract: A system for processing a workpiece includes a plasma immersion ion implantation reactor with an enclosure having a side wall and a ceiling and defining a chamber, and a workpiece support pedestal within the chamber having a workpiece support surface facing the ceiling and defining a process region extending generally across the wafer support pedestal and confined laterally by the side wall and axially between the workpiece support pedestal and the ceiling. The enclosure has at least a first pair of openings at generally opposite sides of the process region, and a first hollow conduit outside the chamber having first and second ends connected to respective ones of the first pair of openings, so as to provide a first reentrant path extending through the conduit and across the process region. The reactor further includes a gas distribution apparatus on or near an interior surface of the reactor for introducing a process gas containing a first species to be ion implanted into a surface layer of the workpiece, and a first RF plasma source power applicator for generating a plasma in the chamber. The system further includes a second wafer processing apparatus and a wafer transfer apparatus for transferring the workpiece between the plasma immersion implantation rector and the second wafer processing apparatus.

Abstract translation: 一种用于处理工件的系统包括具有外壳的等离子体浸入式离子注入反应器，所述外壳具有侧壁和天花板并且限定室，并且所述室内的工件支撑基座具有面向天花板的工件支撑表面，并且限定延伸 通常横跨晶片支撑台座并且由侧壁横向限制并且轴向地在工件支撑台座和天花板之间。 外壳在工艺区域的大致相对侧具有至少第一对开口，腔室外的第一中空导管具有连接到第一对开口中的相应开口的第一端和第二端，以便提供第一凹槽 路径延伸穿过管道并跨越过程区域。 反应器还包括在反应器的内表面上或附近的气体分配装置，用于将含有待离子注入的第一种类的工艺气体引入到工件的表面层中;以及第一RF等离子体源功率施加器，用于产生等离子体 在房间里 该系统还包括第二晶片处理装置和晶片传送装置，用于在等离子浸入植入装置和第二晶片处理装置之间传送工件。

公开(公告)号：US07312148B2

公开(公告)日：2007-12-25

申请号：US11199570

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/44

CPC classification number: H01L21/76877 ,  H01L21/76843 ,  H01L21/76864 ,  H01L21/76873

Abstract: A method of forming a barrier layer for a thin film structure on a semiconductor substrate includes forming high aspect ratio openings in a base layer having vertical side walls, depositing a dielectric barrier layer comprising a dielectric compound of a barrier metal on the surfaces of the high aspect ratio openings including the vertical side walls and depositing a metal barrier layer comprising the barrier metal on the first barrier layer. The method further includes reflowing the metal barrier layer by (a) directing light from an array of continuous wave lasers into a line of light extending at least partially across the thin film structure, and (b) translating the line of light relative to the thin film structure in a direction transverse to the line of light.

Abstract translation: 在半导体衬底上形成用于薄膜结构的阻挡层的方法包括在具有垂直侧壁的基底层中形成高纵横比的开口，在高的表面上沉积包含阻挡金属的电介质化合物的介电阻挡层 纵横比开口，包括垂直侧壁，并且在第一阻挡层上沉积包含阻挡金属的金属阻挡层。 该方法还包括通过（a）将来自连续波激光阵列的光引导到至少部分穿过薄膜结构延伸的光线中来回流金属阻挡层，以及（b）相对于薄的平移光线 薄膜结构在横向于光线的方向上。

公开(公告)号：US07292428B2

公开(公告)日：2007-11-06

申请号：US11115951

申请日：2005-04-26

Applicant: Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

Inventor： Hiroji Hanawa ,  Andrew Nguyen ,  Kenneth S. Collins ,  Kartik Ramaswamy ,  Biagio Gallo ,  Amir Al-Bayati

IPC: H02N13/00

CPC classification number: H01L21/68742 ,  H01L21/6831

Abstract: A lift pin assembly for use in a reactor for processing a workpiece includes plural lift pins extending generally parallel with a lift direction, each of the plural lift pins having a top end for supporting a workpiece and a bottom end. A lift table faces the bottom ends of the pins and is translatable in a direction generally parallel with the lift direction. A small force detector senses a force exerted by the lift pins that is sufficiently large to indicate a chucked wafer and sufficiently small to avoid dechucking a wafer. A large force detector senses a force exerted by the lift pins in a range sufficient to de-chuck the wafer.

Abstract translation: 用于处理工件的反应器中的提升销组件包括大体平行于提升方向延伸的多个提升销，多个提升销中的每一个具有用于支撑工件的顶端和底端。 升降台面向销的底端，并可在与升降方向大致平行的方向上平移。 小的力检测器感测由提升销施加的足够大的力以指示夹紧的晶片并且足够小以避免使晶片脱扣。 大的力检测器感测由提升销施加的力在足以脱离晶片的范围内。

公开(公告)号：US20070032082A1

公开(公告)日：2007-02-08

申请号：US11199592

申请日：2005-08-08

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/302

CPC classification number: H01L21/0332 ,  G03F1/54 ,  G03F1/68 ,  G03F7/202 ,  H01L21/3081 ,  H01L21/3086

Abstract: A method of processing a thin film structure on a semiconductor substrate using an optically writable mask, the method includes placing the substrate in a reactor chamber, the substrate having on its surface a target layer to be exposed to a light source in accordance with a predetermined pattern, depositing an optically writable carbon-containing mask layer on the substrate by (a) introducing a carbon-containing process gas into the chamber, (b) generating a reentrant toroidal RF plasma current in a reentrant path that includes a process zone overlying the workpiece by coupling plasma RF source power to an external portion of the reentrant path, (c) coupling RF plasma bias power or bias voltage to the workpiece. The method further includes optically writing on the carbon-containing mask layer in accordance with the predetermined pattern with writing light of a characteristic suitable for transforming the transparency or opacity of the optically writable mask layer and exposing through the mask layer the target layer with reading light of a characteristic different from that of the writing light.

Abstract translation: 一种使用光学可写掩模在半导体衬底上处理薄膜结构的方法，所述方法包括将衬底放置在反应室中，所述衬底在其表面上具有根据预定的暴露于光源的靶层 （a）将含碳工艺气体引入所述室中，（b）在可折入路径中产生可重入环形的RF等离子体电流，所述折返路径包括位于所述腔内的过程区域 通过将等离子体RF源功率耦合到可折入路径的外部部分，（c）将RF等离子体偏置功率或偏置电压耦合到工件。 该方法还包括根据预定图案，用适合于转换光学可写掩膜层的透明度或不透明度的特性的光进行光学写入，并通过掩模层曝光目标层与读取光 具有与书写光不同的特征。

公开(公告)号：US07109098B1

公开(公告)日：2006-09-19

申请号：US11131904

申请日：2005-05-17

Applicant: Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

Inventor： Kartik Ramaswamy ,  Hiroji Hanawa ,  Biagio Gallo ,  Kenneth S. Collins ,  Kai Ma ,  Vijay Parihar ,  Dean Jennings ,  Abhilash J. Mayur ,  Amir Al-Bayati ,  Andrew Nguyen

IPC: H01L21/26

CPC classification number: H01L21/268 ,  H01L21/02118 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/02321 ,  H01L21/26513 ,  H01L21/3127 ,  H01L21/314 ,  H01L21/3146

Abstract: A method of forming semiconductor junctions in a semiconductor material of a workpiece includes ion implanting dopant impurities in selected regions of the semiconductor material, introducing an optical absorber material precursor gas into a chamber containing the workpiece, generating an RF oscillating toroidal plasma current in a reentrant path that includes a process zone overlying the workpiece by applying RF source power, so as to deposit a layer of an optical absorber material on the workpiece, and optically annealing the workpiece so as to activate dopant impurities in the semiconductor material.

Abstract translation: 在工件的半导体材料中形成半导体结的方法包括在半导体材料的选定区域中的离子注入掺杂剂杂质，将光吸收材料前体气体引入到包含工件的腔室中，在折返中产生RF振荡环形等离子体电流 路径，其包括通过施加RF源功率覆盖工件的工艺区域，以便在工件上沉积光吸收材料层，并对工件进行光学退火，以激活半导体材料中的掺杂剂杂质。