公开(公告)号：US20060216949A1

公开(公告)日：2006-09-28

申请号：US10553828

申请日：2004-04-20

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC: H01L21/31 ,  H01L21/469

CPC classification number: H01L21/67109 ,  C23C16/4405

Abstract: The present invention is a method of cleaning a heat treatment apparatus that deposits an SiO2 film by mean of TEOS on an object to be processed contained in a treatment vessel capable of forming a vacuum. In the cleaning method, the heat treatment apparatus is cleaned by supplying an HF gas and an NH3 gas into the treatment vessel.

Abstract translation: 本发明是一种清洗热处理装置的方法，该热处理装置通过TEOS将SiO 2膜沉积在能够形成真空的处理容器中的待加工物体上。 在清洗方法中，通过向处理容器供给HF气体和NH 3气体来清洁热处理装置。

公开(公告)号：US20060216941A1

公开(公告)日：2006-09-28

申请号：US10552262

申请日：2004-04-20

Applicant: Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

Inventor： Kazuhide Hasebe ,  Mitsuhiro Okada ,  Takashi Chiba ,  Jun Ogawa

IPC: H01L21/306 ,  B44C1/22 ,  C23F1/00

CPC classification number: H01L21/31116

Abstract: A silicon dioxide film removing method is capable of removing a silicon dioxide film, such as a natural oxide film or a chemical oxide film, at a temperature considerably higher than a room temperature. The silicon dioxide film removing method of removing a silicon dioxide film formed on a workpiece in a processing vessel 18 that can be evacuated uses a mixed gas containing HF gas and NH3 gas for removing the silicon dioxide film. The silicon dioxide film can be efficiently removed from the surface of the workpiece by using the mixed gas containing HF gas and NH3 gas.

Abstract translation: 二氧化硅膜去除方法能够在比室温高的温度下除去二氧化硅膜，例如天然氧化物膜或化学氧化物膜。 在可以抽真空的处理容器18中去除在工件上形成的二氧化硅膜的二氧化硅膜去除方法使用含有HF气体和NH 3气体的混合气体来除去二氧化硅膜。 通过使用含有HF气体和NH 3气体的混合气体，可以有效地从工件表面除去二氧化硅膜。

公开(公告)号：US20060081182A1

公开(公告)日：2006-04-20

申请号：US11246290

申请日：2005-10-11

Applicant: Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

Inventor： Mitsuhiro Okada ,  Atsushi Endo ,  Toshiharu Nishimura ,  Kazuhide Hasebe

IPC: C23C16/00 ,  B08B3/12 ,  B44C1/22 ,  B05C11/00

CPC classification number: C23C16/4405

Abstract: A thin film deposition system cleaning method is capable of efficiently removing reaction products deposited on surfaces of component members of a thin film deposition system. A thermal processing system 1 capable of carrying out the thin film deposition system cleaning method includes a controller 100. The controller 100 controls a heating means so as to heat the interior of a reaction tube 2 at a temperature in the range of 400° C. to 700° C. The controller 100 controls a cleaning gas supply means for supplying a cleaning gas containing fluorine and hydrogen fluoride through a process gas supply pipe 17 into the reaction tube 2 to remove deposits deposited on surfaces exposed to an atmosphere in the reaction tube 2.

Abstract translation: 薄膜沉积系统清洁方法能够有效地去除沉积在薄膜沉积系统的部件的表面上的反应产物。 能够进行薄膜沉积系统清洗方法的热处理系统1包括控制器100。 控制器100控制加热装置，以便在400℃至700℃范围内的温度下加热反应管2的内部。控制器100控制用于供应含有氟的清洁气体的清洁气体供应装置 和氟化氢通过工艺气体供给管17进入反应管2，以去除沉积在暴露于反应管2中的气氛的表面上的沉积物。

公开(公告)号：US20050282365A1

公开(公告)日：2005-12-22

申请号：US11155629

申请日：2005-06-20

Applicant: Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

Inventor： Kazuhide Hasebe ,  Pao-Hwa Chou ,  Chaeho Kim

IPC: C23C16/00 ,  C23C16/24 ,  H01L21/26 ,  H01L21/42

CPC classification number: C23C16/24 ,  C23C16/45523 ,  Y10T117/1024

Abstract: A film formation apparatus for a semiconductor process includes a source gas supply circuit to supply into a process container a source gas for depositing a thin film on target substrates, and a mixture gas supply circuit to supply into the process container a mixture gas containing a doping gas for doping the thin film with an impurity and a dilution gas for diluting the doping gas. The mixture gas supply circuit includes a gas mixture tank disposed outside the process container to mix the doping gas with the dilution gas to form the mixture gas, a mixture gas supply line to supply the mixture gas from the gas mixture tank into the process container, a doping gas supply circuit to supply the doping gas into the gas mixture tank, and a dilution gas supply circuit to supply the dilution gas into the gas mixture tank.

Abstract translation: 一种用于半导体工艺的成膜装置包括：源气体供应电路，用于向处理容器中提供用于在目标衬底上沉积薄膜的源气体;以及混合气体供应电路，向处理容器供应含有掺杂物质的混合气体 用于用杂质掺杂薄膜的气体和用于稀释掺杂气体的稀释气体。 混合气体供给回路包括：设置在处理容器外部的混合气体，将掺杂气体与稀释气体混合，形成混合气体，混合气体供给管路，将混合气体从气体混合罐供给到处理容器内; 用于将掺杂气体供应到气体混合罐中的掺杂气体供应回路，以及将稀释气体供应到气体混合罐中的稀释气体供给回路。

公开(公告)号：US06599845B2

公开(公告)日：2003-07-29

申请号：US09845345

申请日：2001-05-01

Applicant: Shoichi Sato ,  Kazuhide Hasebe ,  Kota Umezawa

Inventor： Shoichi Sato ,  Kazuhide Hasebe ,  Kota Umezawa

IPC: H01L2131

CPC classification number: H01L21/02238 ,  C01B13/00 ,  C01B13/02 ,  H01L21/02255 ,  H01L21/31662

Abstract: An oxidation method of oxidizing surfaces of workpieces heated at a predetermined temperature in a vacuum atmosphere in a processing vessel produces active hydroxyl and active oxygen species. The active hydroxyl and active oxygen species oxidize the surfaces of the workpieces in a processing vessel. Both the intrafilm thickness uniformity and the characteristics of the oxide film can be improved, maintaining oxidation rate on a relatively high level.

公开(公告)号：US06344387B1

公开(公告)日：2002-02-05

申请号：US09569297

申请日：2000-05-11

Applicant: Kazuhide Hasebe ,  Atsumi Ito ,  Kenji Tago ,  Teruyuki Hayashi

Inventor： Kazuhide Hasebe ,  Atsumi Ito ,  Kenji Tago ,  Teruyuki Hayashi

IPC: H01L218242

CPC classification number: H01L21/67303 ,  C23C16/4583 ,  H01L21/67306 ,  H01L21/67309

Abstract: A wafer boat that supports a plurality of semiconductor wafers at a predetermined pitch, which are to be processed by a vertical thermal processing furnace, comprises a plurality of support columns; wafer support grooves formed in the support columns for supporting the peripheral edges of the wafers; and a film thickness equalization plate that is substantially the same size as the wafers, or is larger than the wafers, and is provided in wafer support grooves that are adjacent to one another in the vertical direction. This configuration ensures the same type of film is formed on the surface facing the surface of the wafer, achieving uniformity of the thus-formed film thickness.

Abstract translation: 以垂直热处理炉处理的以预定间距支撑多个半导体晶片的晶片舟包括多个支撑柱; 形成在支撑柱中的晶片支撑槽，用于支撑晶片的周边边缘; 以及与晶片大致相同的尺寸或大于晶片的膜厚均衡板，并且设置在在上下方向上彼此相邻的晶片支撑槽中。 该结构确保了在面向晶片表面的表面上形成相同类型的膜，从而实现了如此形成的膜厚度的均匀性。

公开(公告)号：US06313047B2

公开(公告)日：2001-11-06

申请号：US09811451

申请日：2001-03-20

Applicant: Kazuhide Hasebe ,  Yuichiro Morozumi ,  Dong-Kyun Choi ,  Takuya Sugawara ,  Seiji Inumiya ,  Yoshitaka Tsunashima

Inventor： Kazuhide Hasebe ,  Yuichiro Morozumi ,  Dong-Kyun Choi ,  Takuya Sugawara ,  Seiji Inumiya ,  Yoshitaka Tsunashima

IPC: H01L2131

CPC classification number: H01L21/02183 ,  C23C16/0272 ,  C23C16/405 ,  H01L21/02271 ,  H01L21/31604

Abstract: Disclosed is an MOCVD method of forming a tantalum oxide film. First, water vapor used as an oxidizing agent is supplied into a process container to cause moisture to be adsorbed on a surface of each semiconductor wafer. Then, PET gas used as a raw material gas is supplied into the process container and is caused to react with the moisture on the wafer at a process temperature of 200° C., thereby forming an interface layer of tantalum oxide. Then, PET gas and oxygen gas are supplied into the process container at the same time, and are caused to react with each other at a process temperature of 410° C., thereby forming a main layer of tantalum oxide on the interface layer.

Abstract translation: 公开了一种形成氧化钽膜的MOCVD方法。 首先，将作为氧化剂使用的水蒸气供给到处理容器中，使得水分吸附在各半导体晶片的表面上。 然后，将作为原料气体使用的PET气体供给到处理容器中，并在200℃的处理温度下与晶片上的水分反应，由此形成氧化钽界面层。 然后，将PET气体和氧气同时供给到处理容器中，并在410℃的处理温度下彼此反应，从而在界面层上形成氧化钽的主层。

公开(公告)号：US6156121A

公开(公告)日：2000-12-05

申请号：US991208

申请日：1997-12-16

Applicant: Kazuhide Hasebe ,  Atsumi Ito ,  Kenji Tago

Inventor： Kazuhide Hasebe ,  Atsumi Ito ,  Kenji Tago

IPC: C23C16/458 ,  H01L21/673 ,  B05C13/00

CPC classification number: H01L21/67303 ,  C23C16/4583 ,  H01L21/67306 ,  H01L21/67309

Abstract: A wafer boat that supports a plurality of semiconductor wafers at a predetermined pitch, which are to be processed by a vertical thermal processing furnace, comprises a plurality of support columns; wafer support grooves formed in the support columns for supporting the peripheral edges of the wafers; and a film thickness equalization plate that is substantially the same size as the wafers. or is larger than the wafers, and is provided in wafer support grooves that are adjacent to one another in the vertical direction. This configuration ensures the same type of film is formed on the surface facing the surface of the wafer, achieving uniformity of the thus-formed film thickness.

Abstract translation: 以垂直热处理炉处理的以预定间距支撑多个半导体晶片的晶片舟包括多个支撑柱; 形成在支撑柱中的晶片支撑槽，用于支撑晶片的周边边缘; 以及与晶片大致相同尺寸的膜厚均衡板。 或者比晶片大，并且设置在在垂直方向上彼此相邻的晶片支撑槽中。 该结构确保了在面向晶片表面的表面上形成相同类型的膜，从而实现了如此形成的膜厚度的均匀性。

公开(公告)号：US5818596A

公开(公告)日：1998-10-06

申请号：US922756

申请日：1997-09-03

Applicant: Masayuki Imai ,  Masaaki Amemiya ,  Kazuhide Hasebe ,  Norihito Kaneko

Inventor： Masayuki Imai ,  Masaaki Amemiya ,  Kazuhide Hasebe ,  Norihito Kaneko

IPC: G01B11/06 ,  G01B21/08 ,  H01L21/66

CPC classification number: G01B11/0616

Abstract: A sample is placed on a sample receiving stage for receiving the sample. The sample is transferred one at a time to a measuring table, and a thickness of a thin film formed on a surface of the sample is measured by irradiating the surface of the sample with a measuring light beam. A covering structure is disposed between the sample receiving stage and the measuring table to define a sample transfer space and a measuring space in which the measuring table is disposed. A high-purity purging gas containing only a very small amount of contaminants is supplied through purging gas supply devices into the transfer space and the measuring space covered with the covering structure.

Abstract translation: 将样品放置在样品接收台上用于接收样品。 将样品一次一个地传送到测量台，并且通过用测量光束照射样品的表面来测量形成在样品表面上的薄膜的厚度。 覆盖结构设置在样品接收台和测量台之间以限定样品传送空间和其中设置测量台的测量空间。 仅通过净化气体供给装置将仅含有非常少量污染物的高纯度吹扫气体供给到传送空间和被覆盖结构覆盖的测量空间。

公开(公告)号：US5677235A

公开(公告)日：1997-10-14

申请号：US600146

申请日：1996-02-12

Applicant: Kazuhide Hasebe ,  Toshiharu Nishimura

Inventor： Kazuhide Hasebe ,  Toshiharu Nishimura

IPC: H01L21/205 ,  C23C16/24 ,  C30B29/06 ,  H01L21/20

CPC classification number: C23C16/24

Abstract: A number of semiconductor wafers are retained in a wafer boat such that the wafers are disposed at intervals in the vertical direction. The wafer boat is loaded into a process tube of a vertical type thermal processing apparatus. The inside of the process tube is heated to 300.degree. to 530.degree. C. in a depressurized atmosphere, and a process gas including a disilane gas is fed into the process tube such that the disilane gas flows at a flow rate of 300 SCCM or more, thereby to form silicon films.

Abstract translation: 许多半导体晶片被保留在晶片舟皿中，使得晶片在垂直方向上间隔设置。 将晶片舟装载到垂直型热处理装置的处理管中。 在减压气氛中将处理管的内部加热至300℃至530℃，并且将包含乙硅烷气体的工艺气体供给到处理管中，使得乙硅烷气体以300SCCM以上的流量流动 ，从而形成硅膜。