公开(公告)号：US20200303901A1

公开(公告)日：2020-09-24

申请号：US16814077

申请日：2020-03-10

Applicant: Kazuki Nagasawa ,  Yoshihiko Miki ,  Kazuhiro Yoneda ,  Naoki Fukuoka

Inventor： Kazuki Nagasawa ,  Yoshihiko Miki ,  Kazuhiro Yoneda ,  Naoki Fukuoka

IPC: H01S5/187 ,  H01S5/183 ,  H01S5/068 ,  G01D5/58

Abstract: A plurality of surface emitting lasers are formed on the single surface emitting laser element. The plurality of surface emitting lasers have respective emission wavelengths selected from wavelengths satisfying condition of: 0

公开(公告)号：US09749566B2

公开(公告)日：2017-08-29

申请号：US14641683

申请日：2015-03-09

Applicant: Kazuhiro Yoneda ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Katsuyuki Sakurano

Inventor： Kazuhiro Yoneda ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Yasukazu Nakatani ,  Katsuyuki Sakurano

IPC: H04N5/374 ,  H04N5/355

CPC classification number: H04N5/374 ,  H04N5/35527

Abstract: An imaging device includes a photoelectric conversion element which photoelectrically converts incident light and generates a charge, accumulates and amplifies the charge, and outputs a photocurrent, wherein a level of an output signal when a charge which is accumulated in the photoelectric conversion element is outputted over a saturated amount of accumulable charge includes a level of an output signal of a charge of a photocurrent of DC component which is generated in the photoelectric conversion element and outputted during a readout time when the charge which is accumulated in the photoelectric conversion element is outputted.

公开(公告)号：US09478568B2

公开(公告)日：2016-10-25

申请号：US14305821

申请日：2014-06-16

Applicant: Katsuhiko Aisu ,  Takaaki Negoro ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

Inventor： Katsuhiko Aisu ,  Takaaki Negoro ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano ,  Hirofumi Watanabe

IPC: H01L27/144 ,  H01L27/146 ,  H04N5/359 ,  H04N5/374 ,  H04N5/3745

CPC classification number: H01L27/144 ,  H01L27/14609 ,  H04N5/359 ,  H04N5/374 ,  H04N5/3745

Abstract: A photoelectric conversion device includes a first output line, a second output line; and a photoelectric conversion cell. The photoelectric conversion cell further includes, a photoelectric conversion element configured to generate an output current corresponding to an intensity of incident light, a first switch element configured to transmit the first output current to the first output line according to a first control signal, and a second switch element configured to transmit the second output current to second output line according to a second control signal. As a result, the photoelectric conversion device can be provided to generate rapidly the image data with wide dynamic range without the need for complex control outside of the photoelectric conversion device.

Abstract translation: 光电转换装置包括第一输出线，第二输出线， 和光电转换单元。 光电转换单元还包括：光电转换元件，被配置为产生与入射光强度相对应的输出电流;第一开关元件，被配置为根据第一控制信号将第一输出电流传输到第一输出线;以及 第二开关元件，被配置为根据第二控制信号将第二输出电流传输到第二输出线。 结果，可以提供光电转换装置以快速生成具有宽动态范围的图像数据，而不需要光电转换装置外部的复杂控制。

公开(公告)号：US20160195431A1

公开(公告)日：2016-07-07

申请号：US14978172

申请日：2015-12-22

Applicant: Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

Inventor： Katsuhiko Aisu ,  Hirofumi Watanabe ,  Takaaki Negoro ,  Yoshinori Ueda ,  Yasukazu Nakatani ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC: G01J1/44

CPC classification number: G01J1/44 ,  G01J2001/444 ,  G01J2001/4473 ,  H04N5/361 ,  H04N5/3655 ,  H04N5/378

Abstract: A photoelectric conversion device includes a pixel cell including a phototransistor, a reference cell including a reference transistor having a temperature characteristic identical to that of the phototransistor and having a fixed electrical state, an analog-to-digital converter that converts an analog output of the pixel cell into a digital output, a correction amount computation unit that computes a correction amount for the digital output of the analog-to-digital converter based on an output of the reference cell and a reference value, and a correction unit that corrects the digital output of the analog-to-digital converter based on the correction amount.

Abstract translation: 光电转换装置包括具有光电晶体管的像素单元，具有与光电晶体管的温度特性相同的具有固定电气状态的参考晶体管的参考晶体管，转换模拟输出的模数转换器 像素单元转换为数字输出;校正量计算单元，其基于所述参考单元的输出和参考值计算所述模数转换器的数字输出的校正量，以及校正单元， 基于校正量的模数转换器的输出。

公开(公告)号：US20150171129A1

公开(公告)日：2015-06-18

申请号：US14560037

申请日：2014-12-04

Applicant: Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

Inventor： Katsuyuki Sakurano ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Yasukazu Nakatani ,  Hirofumi Watanabe

IPC: H01L27/146 ,  H01L31/113

CPC classification number: H01L31/1136 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14638 ,  H01L27/14643 ,  H01L27/14689

Abstract: A semiconductor device and a method of manufacturing a semiconductor device are disclosed. The method includes forming a trench, in a vertical direction of a semiconductor substrate having a plurality of photoelectric converting elements arranged on the semiconductor device, at positions between the photoelectric converting elements that are next to each other, forming a first conductive-material layer in and above the trench by implanting a first conductive material into the trench after an oxide film is formed on an inner wall of the trench, forming a first conductor by removing the first conductive-material layer excluding a first conductive portion of the first conductive-material layer implanted into the trench, and forming an upper gate electrode above the first conductor, the upper gate electrode configured to be conductive with the first conductor. The semiconductor device includes a semiconductor substrate, an image sensor, a trench, a first conductor, and an upper gate electrode.

Abstract translation: 公开了半导体器件和制造半导体器件的方法。 该方法包括在彼此相邻的光电转换元件之间的位置处形成在具有布置在半导体器件上的多个光电转换元件的半导体衬底的垂直方向上形成沟槽，形成第一导电材料层 并且在沟槽的内壁上形成氧化膜之后，通过将第一导电材料注入到沟槽中并在沟槽之上形成第一导体，通过除去除第一导电材料的第一导电部分之外的第一导电材料层 层，并且在第一导体上形成上栅电极，上栅电极被配置为与第一导体导电。 半导体器件包括半导体衬底，图像传感器，沟槽，第一导体和上部栅电极。

公开(公告)号：US20150076572A1

公开(公告)日：2015-03-19

申请号：US14482092

申请日：2014-09-10

Applicant: Katsuyuki Sakurano ,  Hirobumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda

Inventor： Katsuyuki Sakurano ,  Hirobumi Watanabe ,  Takaaki Negoro ,  Katsuhiko Aisu ,  Kazuhiro Yoneda

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14609 ,  H01L27/14643 ,  H01L27/14689

Abstract: A semiconductor device includes a semiconductor substrate, a plurality of photoelectric conversion elements arranged on the semiconductor substrate to collectively form an image sensor, a plurality of trenches each formed between the photoelectric conversion elements adjacent to each other, and a plurality of impurity diffusion layers each provided at a bottom of the trench at a position deeper than a p-n junction of the photoelectric conversion element.

Abstract translation: 半导体器件包括半导体衬底，布置在半导体衬底上以共同形成图像传感器的多个光电转换元件，各自形成在彼此相邻的光电转换元件之间的多个沟槽，以及多个杂质扩散层 设置在比光电转换元件的pn结更深的位置处的沟槽的底部。

公开(公告)号：US20130334547A1

公开(公告)日：2013-12-19

申请号：US13884640

申请日：2012-06-01

Applicant: Kazuhiro Yoneda

Inventor： Kazuhiro Yoneda

IPC: H01L33/24

CPC classification number: H01L33/24 ,  H01L27/3211 ,  H01L51/52 ,  H01L51/5265 ,  H01L2251/558

Abstract: A light-emitting element includes a reflective electrode, a light-transmitting electrode disposed opposite the reflective electrode, a light-emitting layer emitting blue light disposed between the reflective electrode and the light-transmitting electrode, and a functional layer disposed between the reflective electrode and the light-emitting layer. The optical thickness of the functional layer is no less than 428.9 nm and no more than 449.3 nm.

Abstract translation: 发光元件包括反射电极，与反射电极相对设置的透光电极，发射设置在反射电极和透光电极之间的蓝色光的发光层，以及设置在反射电极之间的功能层 和发光层。 功能层的光学厚度不小于428.9nm，不大于449.3nm。

公开(公告)号：US20200166768A1

公开(公告)日：2020-05-28

申请号：US16693429

申请日：2019-11-25

Applicant: Kazuhiro YONEDA ,  Yoshihiko MIKI ,  Naoki FUKUOKA

Inventor： Kazuhiro YONEDA ,  Yoshihiko MIKI ,  Naoki FUKUOKA

IPC: G02B27/48 ,  H01S5/42 ,  H01S5/022 ,  H01S5/0687 ,  G06K9/00 ,  G06K9/20 ,  G01J1/42 ,  B25J19/02 ,  B33Y50/00 ,  B29C64/386

Abstract: According to one embodiment, a light source includes a plurality of light-emitting elements each including one or more surface-emitting lasers; and a plurality of detecting elements located on a same substrate as the light-emitting elements. The detecting elements individually detect quantities of output light of the light-emitting elements.

公开(公告)号：US10249848B2

公开(公告)日：2019-04-02

申请号：US14241128

申请日：2012-07-17

Applicant: Kazuhiro Yoneda ,  Keiko Kurata ,  Noriyuki Matsusue

Inventor： Kazuhiro Yoneda ,  Keiko Kurata ,  Noriyuki Matsusue

IPC: H01L51/52 ,  H01L51/56 ,  H01L27/32

Abstract: An organic light-emitting panel includes a reflective electrode, a functional layer, having a single or multi-layer structure, located on the reflective electrode, an organic light-emitting layer located on the functional layer, a transparent electrode located above the organic light-emitting layer, a low refractive index layer located on the transparent electrode, and a first thin-film sealing layer located on the low refractive index layer. The low refractive index layer has a lower refractive index than both the transparent electrode and the first thin-film sealing layer. Difference between respective refractive indices of the low refractive index layer and the transparent electrode is 0.4-1.1. Difference between respective refractive indices of the low refractive index layer and the first thin-film sealing layer is 0.1-0.8. The low refractive index layer has thickness of 20-130 nm.

公开(公告)号：US09762822B2

公开(公告)日：2017-09-12

申请号：US14463743

申请日：2014-08-20

Applicant: Takaaki Negoro ,  Hirofumi Watanabe ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

Inventor： Takaaki Negoro ,  Hirofumi Watanabe ,  Katsuhiko Aisu ,  Kazuhiro Yoneda ,  Katsuyuki Sakurano

IPC: H04N5/355 ,  H01L27/146 ,  H04N5/3745 ,  H04N5/378 ,  H01L27/148 ,  H04N5/77 ,  H04N5/374 ,  H04N5/907

CPC classification number: H04N5/3559 ,  H01L27/14612 ,  H01L27/14638 ,  H01L27/14681 ,  H01L27/148 ,  H04N5/35509 ,  H04N5/3745 ,  H04N5/37457 ,  H04N5/378 ,  H04N5/772 ,  H04N5/907

Abstract: An imaging device includes at least one pixel having a phototransistor which converts light energy into signal charge and varies an amplification factor relative to the intensity of the received light energy, wherein the signal charge of the phototransistor is read out while receiving the light energy with the phototransistor for each pixel.