公开(公告)号：US20130101309A1

公开(公告)日：2013-04-25

申请号：US13463080

申请日：2012-05-03

申请人： Kazuki INAMI ,  Yasunori MOMOMURA ,  Yuki NAGAMORI ,  Koji OTSUKA ,  Masafumi KUDO

发明人： Kazuki INAMI ,  Yasunori MOMOMURA ,  Yuki NAGAMORI ,  Koji OTSUKA ,  Masafumi KUDO

IPC分类号： G03G21/20

CPC分类号： G03G15/0291 ,  F24F7/007 ,  F24F7/06 ,  F24F2007/001 ,  G03G21/206

摘要： A blowing device includes a blower and an air duct including an inlet, an outlet, and a body. The outlet faces a longitudinal portion of an oblong target structure toward which air is blown. The outlet allows air to be discharged in a direction that is substantially perpendicular to a longitudinal direction in which the longitudinal portion extends. The inlet has an opening and the outlet has an oblong opening, and the opening of the inlet and the opening of the outlet having different shapes. The body has a passage space formed therein. Plural restraining portions that restrain airflow are disposed at different positions in the passage space in the direction of airflow. A most downstream one of the restraining portions is formed so as to at least partially cover the passage space with an air-permeable member having plural air passage portions that are distributed the air-permeable member.

摘要翻译： 吹风装置包括鼓风机和包括入口，出口和主体的空气管道。 出口面向被吹送空气的长方形目标结构的纵向部分。 出口允许空气沿与纵向部分延伸的纵向方向基本垂直的方向排出。 入口具有开口，出口具有长方形的开口，入口的开口和出口的开口具有不同的形状。 主体具有形成在其中的通道空间。 限制气流的多个限制部分沿通气方向设置在通道空间中的不同位置。 形成限制部分中最下游的一个形成为至少部分地覆盖通道空间，其中透气部件具有分配透气部件的多个空气通道部分。

公开(公告)号：USD643310S1

公开(公告)日：2011-08-16

申请号：US29362062

申请日：2010-05-19

申请人： Kathryn Marie Birchmeier ,  Paul Andrew Cogley ,  Noriko Sakamoto ,  Koji Otsuka ,  Takashi Kado

设计人： Kathryn Marie Birchmeier ,  Paul Andrew Cogley ,  Noriko Sakamoto ,  Koji Otsuka ,  Takashi Kado

公开(公告)号：USD642484S1

公开(公告)日：2011-08-02

申请号：US29362051

申请日：2010-05-19

申请人： Kathryn Marie Birchmeier ,  Paul Andrew Cogley ,  Noriko Sakamoto ,  Koji Otsuka ,  Takashi Kado

设计人： Kathryn Marie Birchmeier ,  Paul Andrew Cogley ,  Noriko Sakamoto ,  Koji Otsuka ,  Takashi Kado

公开(公告)号：US20100304282A1

公开(公告)日：2010-12-02

申请号：US12815091

申请日：2010-06-14

申请人： Koji OTSUKA ,  Kenji OKAMURA

发明人： Koji OTSUKA ,  Kenji OKAMURA

IPC分类号： G03F1/00

CPC分类号： G01B9/02065 ,  C03C15/02 ,  C03C19/00 ,  C03C23/006 ,  C03C2204/08 ,  G01B9/02057 ,  G01B9/0209 ,  G01B11/30 ,  G03F1/60 ,  H01J2237/0812 ,  Y10T428/24355

摘要： A glass substrate obtained by a method including measuring flatness of a glass substrate surface and measuring concentration distribution of dopant in the substrate. Processing conditions of the surface are set up for each site of the substrate based on results from the measuring the flatness and the measuring the distribution, and the finishing is carried out while keeping an angle formed by normal line of the substrate and incident beam onto the surface at from 30 to 89°. The surface is subjected to second finishing for improving an RMS in a high spatial frequency region. The surface after the second finishing satisfies the requirements: an RMS slope in the region that 5 μm

摘要翻译： 一种玻璃基板，其通过包括测量玻璃基板表面的平坦度和测量基板中掺杂剂的浓度分布的方法获得。 基于测量平面度和测量分布的结果，为基板的每个部位设置表面的加工条件，并且在将基板和入射光束的法线形成的角度保持在 表面为30〜89°。 对表面进行第二次精加工以改善高空间频率区域中的均方根。 第二次修整后的表面满足以下要求：在5μm（λ）（空间波长）<1mm的区域内的RMS斜率不大于0.5mRad，并且在250nm <λ（空间波长）的区域中的RMS斜率， <5μm不大于0.6mRad。

公开(公告)号：US07675076B2

公开(公告)日：2010-03-09

申请号：US11375964

申请日：2006-03-15

申请人： Koji Otsuka ,  Tetsuji Moku ,  Junji Sato ,  Yoshiki Tada ,  Takashi Yoshida

发明人： Koji Otsuka ,  Tetsuji Moku ,  Junji Sato ,  Yoshiki Tada ,  Takashi Yoshida

IPC分类号： H01L33/00

CPC分类号： H01L29/267 ,  H01L21/02381 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L29/2003 ,  H01L33/007

摘要： A light-emitting device has a main semiconductor region formed via an n-type AlInGaN buffer region on a p-type silicon substrate, the latter being sufficiently electroconductive to provide part of the current path through the device. Constituting the primary working part of the LED, the main semiconductor region comprises an n-type GaN layer, an active layer, and a p-type GaN layer, which are successively epitaxially grown in that order on the buffer region. A heterojunction is created between p-type substrate and n-type buffer region. Carrier transportation from substrate to buffer region is expedited by the interface levels of the heterojunction, with a consequent reduction of the drive voltage requirement of the LED.

摘要翻译： 发光器件具有通过p型硅衬底上的n型AlInGaN缓冲区形成的主半导体区域，该半导体区域充分导电以提供穿过器件的电流路径的一部分。 构成LED的初级工作部分，主半导体区域包括依次在缓冲区上外延生长的n型GaN层，有源层和p型GaN层。 在p型衬底和n型缓冲区之间产生异质结。 从衬底到缓冲区域的载流子传输通过异质结的界面水平加速，从而降低了LED的驱动电压要求。

公开(公告)号：US07622050B2

公开(公告)日：2009-11-24

申请号：US11615530

申请日：2006-12-22

申请人： Koji Otsuka ,  Masabumi Ito

发明人： Koji Otsuka ,  Masabumi Ito

IPC分类号： H01L21/302

CPC分类号： C03C15/02

摘要： A process for polishing a glass substrate required to have high-degree of flatness and smoothness, is provided. A preliminarily polished glass substrate is applied with a surface treatment by a first-step gas-cluster ion beam etching to improve the flatness, and then, the glass substrate is applied with a surface treatment by a second-step gas-cluster ion beam etching having different irradiation conditions of those of the first-step gas-cluster ion beam etching to improve the surface roughness, whereby the glass substrate is finish-polished to have a flatness of at most 0.05 μm and a surface roughness (Rms) of at most 0.25 nm.

摘要翻译： 提供了要求具有高度平坦度和平滑度的玻璃基板的抛光工艺。 通过第一级气体 - 团簇离子束蚀刻对预先抛光的玻璃基板进行表面处理以提高平坦度，然后通过第二级气体簇离子束蚀刻对玻璃基板进行表面处理 具有与第一级气体簇离子束蚀刻不同的照射条件以改善表面粗糙度，由此玻璃基板被精抛光以具有至多0.05μm的平坦度和最多的表面粗糙度（Rms） 0.25nm。

公开(公告)号：US20090121237A1

公开(公告)日：2009-05-14

申请号：US12265887

申请日：2008-11-06

申请人： Hitoshi Murofushi ,  Koji Otsuka

发明人： Hitoshi Murofushi ,  Koji Otsuka

IPC分类号： H01L33/00 ,  H01L21/50

CPC分类号： H01L27/153 ,  G03G15/04054 ,  G03G15/326 ,  H01L33/385 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2924/00

摘要： An array of LEDs are grown by epitaxy on row-connecting conductor strips extending in parallel spaced relationship to one another on the surface of a semiconductor substrate and are thereby electrically interconnected in rows. The row-connecting conductor strips are formed by ion implantation of a p-type dopant into parts of an n-type silicon substrate. Column-connecting conductor strips extend over the light-emitting surfaces of the LEDs for electrically interconnecting them in columns. The LEDs are lit up individually by voltage application between one of the row-connecting conductor strips and one of the column-connecting conductor strips.

摘要翻译： LED阵列通过在半导体衬底的表面上彼此平行间隔延伸的行连接导体条上进行外延生长，从而以行电互连。 行连接导体条通过将p型掺杂剂离子注入到n型硅衬底的部分中而形成。 列连接导体条在LED的发光表面上延伸，以将它们串联在列中。 通过在一行之间的行连接导体条和一个列连接导体条之间的电压单独点亮LED。

公开(公告)号：US20070259605A1

公开(公告)日：2007-11-08

申请号：US11779441

申请日：2007-07-18

申请人： Koji OTSUKA ,  Masabumi Ito ,  Hiroshi Kojima

发明人： Koji OTSUKA ,  Masabumi Ito ,  Hiroshi Kojima

IPC分类号： B24B49/00 ,  B24B7/30

CPC分类号： C03C15/02 ,  C03C19/00 ,  C03C2204/08

摘要： A process for polishing a glass substrate, which enables to polish a glass substrate having a large waviness formed by mechanical polishing, to have a surface excellent in flatness, is provided. A process for polishing a glass substrate, comprising a step of measuring the surface profile of a mechanically polished glass substrate to identify the width of waviness present in the glass substrate, and a step of applying dry etching using a beam having a beam size in FWHM (full width of half maximum) value of at most the above size of waviness, to polish the surface of the glass substrate.

摘要翻译： 提供了一种用于抛光玻璃基板的方法，该玻璃基板能够研磨通过机械抛光形成的具有大波纹度的玻璃基板以具有优异的平面度的表面。 一种用于抛光玻璃基板的方法，包括测量机械抛光的玻璃基板的表面轮廓以识别玻璃基板中存在的波纹宽度的步骤，以及使用在FWHM中具有光束尺寸的光束进行干蚀刻的步骤 （全宽半高）值至多为上述大小的波纹，以研磨玻璃基板的表面。

公开(公告)号：US07186620B2

公开(公告)日：2007-03-06

申请号：US10995446

申请日：2004-11-23

申请人： Koji Otsuka ,  Junji Sato ,  Tomoya Sugahara

发明人： Koji Otsuka ,  Junji Sato ,  Tomoya Sugahara

IPC分类号： H01L21/336

CPC分类号： H01L33/007 ,  C30B25/02 ,  C30B29/40 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L29/2003 ,  H01L29/66462

摘要： For fabricating an LED substrate with minimal dislocations in its nitride semiconductor layers, GaN is epitaxially grown into a first formative layer overlying a multilayered buffer region on a silicon substrate. A second formative layer is then formed on the first formative layer by epitaxially growing AlN, at such a rate that interstices are created in the first formative layer by the etching action of the reactor gases in the early stages of the fabrication of the second formative layer. Then the second formative layer is etched away from over the intersticed first formative layer, leaving the interstices open. Then a filler layer of GaN is epitaxially grown on the intersticed first formative layer in interfitting engagement therewith. Dislocations are greatly reduced in active semiconductor layers formed subsequently on the filler layer.

摘要翻译： 为了制造其氮化物半导体层中具有最小位错的LED衬底，GaN外延生长成覆盖硅衬底上的多层缓冲区的第一形成层。 然后通过外延生长AlN在第一形成层上形成第二形成层，其速度是通过在第二形成层的制造的早期阶段通过反应器气体的蚀刻作用在第一形成层中产生空隙 。 然后将第二形成层从间隙的第一形成层上蚀刻掉，从而使间隙开放。 然后，在间隙第一形成层上外延生长GaN的填料层，以与其相互配合接合。 填料层随后形成的有源半导体层的位错大大降低。

公开(公告)号：US07128870B2

公开(公告)日：2006-10-31

申请号：US10606882

申请日：2003-06-24

申请人： Koji Otsuka

发明人： Koji Otsuka

IPC分类号： C03B33/34

CPC分类号： C04B35/013 ,  B32B2311/22 ,  C04B35/4682 ,  C04B35/62685 ,  C04B35/63 ,  C04B35/634 ,  C04B35/6342 ,  C04B35/638 ,  C04B2235/3203 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3224 ,  C04B2235/3232 ,  C04B2235/3248 ,  C04B2235/3284 ,  C04B2235/3418 ,  C04B2235/36 ,  C04B2235/652 ,  C04B2235/6582 ,  C04B2237/346 ,  C04B2237/405 ,  H01G4/1227

摘要： A method for manufacturing multilayer ceramic electronic components includes the steps of removing organic materials from multilayer ceramic bodies having internal electrodes and ceramic layers, and then sintering the multilayer ceramic bodies. After finishing the removing step, it is preferable that the amount of the remaining organic materials in the multilayer ceramic body is 0.5 to 8.5 weight %, more preferably 1.0 to 5.0 weight %. The removing process may be performed in a neutral, a reductive or inert atmosphere. It is also preferable that the organic materials removing temperature of the internal electrodes are controlled to be higher than that of the ceramic layer.

摘要翻译： 多层陶瓷电子部件的制造方法包括从具有内部电极和陶瓷层的多层陶瓷体除去有机材料，然后烧结多层陶瓷体的步骤。 在完成除去步骤之后，优选多层陶瓷体中剩余的有机材料的量为0.5〜8.5重量％，更优选为1.0〜5.0重量％。 除去过程可以在中性，还原性或惰性气氛中进行。 还优选将内部电极的有机材料去除温度控制为高于陶瓷层的去除温度。