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    Semiconductor light emitting device package
    21.
    发明授权
    Semiconductor light emitting device package 有权
    半导体发光器件封装

    公开(公告)号：US08158996B2

    公开(公告)日：2012-04-17

    申请号：US12443659

    申请日：2007-12-18

    Applicant: Yong Seok Choi ,  Kwang Cheol Lee

    Inventor： Yong Seok Choi ,  Kwang Cheol Lee

    IPC: H01L33/00

    CPC classification number: H01L33/486 ,  H01L33/48 ,  H01L33/483 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A semiconductor light emitting device package according to an embodiment comprising: a package body comprising a groove section; an electrode in the groove section; at least one semiconductor light emitting device electrically connected to the electrode in the groove section of the package body; an interconnection pattern on an outer peripheral surface of the package body and electrically connected to the electrode, wherein a part of the interconnection pattern is on a bottom surface of the package body; and a metal pattern is on the bottom surface of the package body corresponding to an area in which the semiconductor light emitting device is located.

    Abstract translation: 根据实施例的半导体发光器件封装，包括：封装体，包括沟槽部分; 槽部中的电极; 至少一个半导体发光器件电连接到封装主体的沟槽部分中的电极; 在所述封装主体的外周表面上的电连接到所述电极的互连图案，其中所述互连图案的一部分在所述封装体的底表面上; 并且金属图案位于与半导体发光器件所在的区域对应的封装主体的底表面上。

    Low-error fixed-width modified booth multiplier
    23.
    发明授权
    Low-error fixed-width modified booth multiplier 失效
    低错误固定宽度修改的展位乘数

    公开(公告)号：US07334200B2

    公开(公告)日：2008-02-19

    申请号：US11062456

    申请日：2005-02-22

    Applicant: Keshab K. Parhi ,  Jin-Gyun Chung ,  Kwang-Cheol Lee ,  Kyung-Ju Cho

    Inventor： Keshab K. Parhi ,  Jin-Gyun Chung ,  Kwang-Cheol Lee ,  Kyung-Ju Cho

    IPC: G06F17/50 ,  G06F7/52

    CPC classification number: G06F7/49947 ,  G06F7/49942 ,  G06F7/5338

    Abstract: A low-error fixed-width multiplier receives a W-bit input and produces a W-bit product. In an embodiment, a multiplier (Y) is encoded using modified Booth coding. The encoded multiplier (Y) and a multiplicand (X) are processed together to generate partial products. The partial products are accumulated to generate a product (P). To compensate for the quantization error, Booth encoder outputs are used for the generation of error compensation bias. The truncated bits are divided into two groups, a major least significant bit group and a minor least significant bit group, depending upon their effects on the quantization error. Different error compensation methods are applied to each group.

    Abstract translation: 低误差固定宽度乘法器接收W位输入并产生W位乘积。 在一个实施例中，使用修改的布斯编码对乘法器（Y）进行编码。 编码乘法器（Y）和被乘数（X）被一起处理以产生部分乘积。 部分产品积累以产生产品（P）。 为了补偿量化误差，布斯编码器输出用于产生误差补偿偏置。 取决于它们对量化误差的影响，截断的比特被分成两组，主要的最低有效位组和次要的最低有效位组。 对每个组应用不同的误差补偿方法。

    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines
    25.
    发明申请
    Nanomachined mechanical components using nanoplates, methods of fabricating the same and methods of manufacturing nanomachines 失效
    使用纳米板的纳米机械部件，其制造方法和制造纳米机械的方法

    公开(公告)号：US20080006888A1

    公开(公告)日：2008-01-10

    申请号：US11263476

    申请日：2005-10-31

    Applicant: Yong Yun ,  Chil Ah ,  Dong Ha ,  Hyung Park ,  Wan Yun ,  Kwang-Cheol Lee ,  Gwang Park

    Inventor： Yong Yun ,  Chil Ah ,  Dong Ha ,  Hyung Park ,  Wan Yun ,  Kwang-Cheol Lee ,  Gwang Park

    IPC: H01L21/00

    CPC classification number: B81C99/0095 ,  B81B2201/035 ,  B81C2201/0143 ,  Y10S977/883 ,  Y10S977/888

    Abstract: Disclosed herein is a method of fabricating nano-components using nanoplates, including the steps of: printing a grid on a substrate using photolithography and Electron Beam Lithography; spraying an aqueous solution dispersed with nanoplates onto the grid portion to position the nanoplates on the substrate; depositing a protective film of a predetermined thickness on the substrate and the nanoplates positioned on the substrate; ion-etching the nanoplates deposited with the protective film by using a Focused Ion Beam (FIB) or Electron Beam Lithography; and eliminating the protective film remaining on the substrate using a protective film remover after the ion-etching of the nanoplates, and a method of manufacturing nanomachines or nanostructures by transporting such nano-components using a nano probe and assembling with other nano-components. The present invention makes it possible to fabricate the high-quality nano-components in a more simple and easier manner at a lower cost, as compared to other conventional methods. Further, the present invention provides a method of implementing nanomachines through combination of such nano-components and biomolecules, etc.

    Abstract translation: 本文公开了使用纳米板制造纳米组分的方法，包括以下步骤：使用光刻和电子束光刻在衬底上印刷栅格; 将分散有纳米板的水溶液喷射到栅格部分上以将纳米板定位在基底上; 在衬底和位于衬底上的纳米板上沉积预定厚度的保护膜; 通过使用聚焦离子束（FIB）或电子束光刻法离子蚀刻沉积有保护膜的纳米板; 并且在纳米板的离子蚀刻之后使用保护膜去除剂去除残留在基板上的保护膜，以及通过使用纳米探针传输这种纳米成分并与其他纳米成分组装来制造纳米机械或纳米结构的方法。 与其它常规方法相比，本发明可以以更简单和更容易的方式以更低的成本制造高质量的纳米组分。 此外，本发明提供了通过这些纳米组分和生物分子等的组合来实现纳米机器的方法。

    Light emitting diode having multi-cell structure and method of manufacturing the same
    27.
    发明申请
    Light emitting diode having multi-cell structure and method of manufacturing the same 有权
    具有多单元结构的发光二极管及其制造方法

    公开(公告)号：US20130134462A1

    公开(公告)日：2013-05-30

    申请号：US13504522

    申请日：2010-11-02

    Applicant: Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    Inventor： Sang-Mook Kim ,  Jong-Hyeob Baek ,  Kwang-Cheol Lee ,  Eun-Mi Yoo

    IPC: H01L33/60 ,  H01L33/36

    CPC classification number: H01L33/60 ,  H01L33/08 ,  H01L33/36 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L2933/0016

    Abstract: Disclosed is a light emitting diode having a multi-cell structure including a number of unit cells. The light emitting diode is capable of reducing light loss of the light emitting diode surface and improving light efficiency by bonding pads to be formed for contact between mesa etching regions for forming an electrode of the existing n-type semiconductor layers and p-type semiconductor layers. The light emitting diode is also capable of controlling chip size and manufacturing chips of different sizes from each other even when going through the same chip manufacturing process as the related art.

    Abstract translation: 公开了具有包括多个单电池的多单元结构的发光二极管。 发光二极管能够减少发光二极管表面的光损失，并且通过形成用于形成现有n型半导体层的电极的台面蚀刻区域和p型半导体层之间的接合焊盘来提高光效率 。 即使经历与现有技术相同的芯片制造工艺，发光二极管也能够控制芯片尺寸和制造不同尺寸的芯片。

    LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME
    28.
    发明申请
    LIGHT-EMITTING DIODE HAVING A WAVELENGTH CONVERSION MATERIAL LAYER, AND METHOD FOR FABRICATING SAME 审中-公开
    具有波长转换材料层的发光二极管及其制造方法

    公开(公告)号：US20120086040A1

    公开(公告)日：2012-04-12

    申请号：US13376714

    申请日：2010-06-10

    Applicant: Kwang-Cheol Lee ,  Jae-Pil Kim ,  Sang-Bin Song ,  Sang-Mook Kim

    Inventor： Kwang-Cheol Lee ,  Jae-Pil Kim ,  Sang-Bin Song ,  Sang-Mook Kim

    IPC: H01L33/50

    CPC classification number: H01L33/507 ,  H01L33/501 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

    Abstract: Provided is a light-emitting diode having a wavelength conversion material and a method for fabricating the same. The light-emitting diode comprises: a base structure; a light-emitting diode chip arranged on the base structure; and a wavelength conversion material layer arranged on the light-emitting diode chip, such that the area adjacent the upper surface of the light-emitting diode chip is thicker than the area adjacent to the side surface of the light-emitting diode chip. In addition, the method for fabricating a light-emitting diode comprises: a step of arranging the light-emitting diode chip on the base structure; and a step of arranging a wavelength conversion material layer containing a light-transmitting photocurable material on the light-emitting diode chip, such that the area thereof adjacent to the upper surface of the light-emitting diode chip is thicker than the area thereof adjacent to the side surface of the light-emitting diode chip.

    Abstract translation: 提供一种具有波长转换材料的发光二极管及其制造方法。 发光二极管包括：基座结构; 布置在基底结构上的发光二极管芯片; 以及布置在发光二极管芯片上的波长转换材料层，使得与发光二极管芯片的上表面相邻的区域比与发光二极管芯片的侧表面相邻的区域更厚。 此外，制造发光二极管的方法包括：将发光二极管芯片布置在基底结构上的步骤; 以及在发光二极管芯片上布置含有透光性光固化性材料的波长转换材料层的步骤，使得其与发光二极管芯片的上表面相邻的面积比邻近发光二极管芯片的面积厚 发光二极管芯片的侧面。

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