Laser produced plasma EUV light source
    21.
    发明授权
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US07598509B2

    公开(公告)日:2009-10-06

    申请号:US11358992

    申请日:2006-02-21

    CPC classification number: H05G2/003 B82Y10/00 G03F7/70033 H05G2/005 H05G2/008

    Abstract: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

    Abstract translation: 公开了一种EUV光源,其可以包括例如激光源。 CO2激光器,等离子体室和用于将激光束从激光源传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通,聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜,用于转向等离子体室中的激光束焦斑的转向光学元件,以及用于调整焦度的光学装置。

    Laser produced plasma EUV light source
    22.
    发明申请
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US20080179548A1

    公开(公告)日:2008-07-31

    申请号:US11786145

    申请日:2007-04-10

    Abstract: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

    Abstract translation: 公开了一种可以包括在等离子体位置处产生等离子体的系统,等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件,例如多个远离现场的多层反射镜,以及设置在等离子体和光学元件之间的流动气体,该气体建立足以在该距离上操作的气体压力, d,在离子到达光学器件之前,将离子能量降低到预先选定的值以下。 在一个实施方案中,气体可以包含氢气,并且在一个具体实施方案中,气体可以包含大于50体积%的氢气。

    Systems for protecting internal components of a EUV light source from plasma-generated debris
    23.
    发明授权
    Systems for protecting internal components of a EUV light source from plasma-generated debris 失效
    用于保护EUV光源的内部部件免受等离子体产生的碎片的系统

    公开(公告)号:US07365351B2

    公开(公告)日:2008-04-29

    申请号:US11512821

    申请日:2006-08-30

    Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    Abstract translation: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    Collector for EUV light source
    24.
    发明授权
    Collector for EUV light source 失效
    EUV光源收集器

    公开(公告)号:US07288778B2

    公开(公告)日:2007-10-30

    申请号:US11603670

    申请日:2006-11-21

    Abstract: It will be understood that an apparatus and method is disclosed, which may comprise a multi-layer reflecting coating forming an EUV reflective surface which may comprise a spectral filter tuned to selectively highly reflect light in a band centered about at a first preferred wavelength and to significantly reduce the reflection of light at a band centered about a second wavelength, e.g., it may be tuned to reflect maximally or almost maximally, near the top of the reflectivity curve, e.g., at around 13.5 nm and at a significantly lower reflectivity at, e.g., around 11 nm, to discriminate against light near 11 nm and favor light at around 13.5 nm. The spectral filter may comprise a plurality of nested grazing angle of incidence shells comprising reflective surfaces comprising the multi-layer reflective coating. e.g. multilayer mirrors, e.g., with one or more reflecting surfaces per shell.

    Abstract translation: 应当理解,公开了一种装置和方法,其可以包括形成EUV反射表面的多层反射涂层,其可以包括调谐为选择性地高度反射在以第一优选波长为中心的带的光的光谱滤光器,并且 显着地减少了在以第二波长为中心的频带处的光的反射,例如,它可以被调谐以在反射率曲线的顶部附近最大或几乎最大程度地反射,例如在大约13.5nm处和在显着较低的反射率处, 例如约11nm,以区分11nm附近的光并有利于约13.5nm的光。 频谱滤波器可以包括多个嵌套的入射角入射壳,包括多层反射涂层的反射表面。 例如 多层反射镜,例如每个壳体具有一个或多个反射表面。

    Collector for EUV light source
    25.
    发明申请

    公开(公告)号:US20070114469A1

    公开(公告)日:2007-05-24

    申请号:US11603670

    申请日:2006-11-21

    Abstract: It will be understood that an apparatus and method is disclosed, which may comprise a multi-layer reflecting coating forming an EUV reflective surface which may comprise a spectral filter tuned to selectively highly reflect light in a band centered about at a first preferred wavelength and to significantly reduce the reflection of light at a band centered about a second wavelength, e.g., it may be tuned to reflect maximally or almost maximally, near the top of the reflectivity curve, e.g., at around 13.5 nm and at a significantly lower reflectivity at, e.g., around 11 nm, to discriminate against light near 11 nm and favor light at around 13.5 nm. The spectral filter may comprise a plurality of nested grazing angle of incidence shells comprising reflective surfaces comprising the multi-layer reflective coating. e.g. multilayer mirrors, e.g., with one or more reflecting surfaces per shell.

    Collector for EUV light source
    26.
    发明授权
    Collector for EUV light source 有权
    EUV光源收集器

    公开(公告)号:US07217940B2

    公开(公告)日:2007-05-15

    申请号:US10798740

    申请日:2004-03-10

    Abstract: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

    Abstract translation: 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎屑的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。

    Laser produced plasma EUV light source
    28.
    发明申请
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US20060219957A1

    公开(公告)日:2006-10-05

    申请号:US11358992

    申请日:2006-02-21

    CPC classification number: H05G2/003 B82Y10/00 G03F7/70033 H05G2/005 H05G2/008

    Abstract: An EUV light source is disclosed that may include a laser source, e.g. CO2 laser, a plasma chamber, and a beam delivery system for passing a laser beam from the laser source into the plasma chamber. Embodiments are disclosed which may include one or more of the following; a bypass line may be provided to establish fluid communication between the plasma chamber and the auxiliary chamber, a focusing optic, e.g. mirror, for focusing the laser beam to a focal spot in the plasma chamber, a steering optic for steering the laser beam focal spot in the plasma chamber, and an optical arrangement for adjusting focal power.

    Abstract translation: 公开了一种EUV光源,其可以包括例如激光源。 CO 2激光器,等离子体室和用于将来自激光源的激光束传递到等离子体室中的光束传送系统。 公开了可以包括以下中的一个或多个的实施例; 可以提供旁路管线以建立等离子体室和辅助室之间的流体连通,聚焦光学器件例如。 用于将激光束聚焦到等离子体室中的焦点的反射镜,用于转向等离子体室中的激光束焦斑的转向光学元件,以及用于调整焦度的光学装置。

    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS
    29.
    发明申请
    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS 有权
    用于保护来自等离子体生物反应器的EUV光源的内部组分的系统

    公开(公告)号:US20060192151A1

    公开(公告)日:2006-08-31

    申请号:US11067099

    申请日:2005-02-25

    Abstract: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    Abstract translation: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    High repetition rate laser produced plasma EUV light source

    公开(公告)号:US20050205810A1

    公开(公告)日:2005-09-22

    申请号:US10803526

    申请日:2004-03-17

    CPC classification number: B82Y10/00 G03F7/70033 H05G2/003 H05G2/008

    Abstract: An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.

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