Laser produced plasma EUV light source
    1.
    发明申请
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US20080179548A1

    公开(公告)日:2008-07-31

    申请号:US11786145

    申请日:2007-04-10

    IPC分类号: H05H1/24

    摘要: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

    摘要翻译: 公开了一种可以包括在等离子体位置处产生等离子体的系统,等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件,例如多个远离现场的多层反射镜,以及设置在等离子体和光学元件之间的流动气体,该气体建立足以在该距离上操作的气体压力, d,在离子到达光学器件之前,将离子能量降低到预先选定的值以下。 在一个实施方案中,气体可以包含氢气,并且在一个具体实施方案中,气体可以包含大于50体积%的氢气。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    2.
    发明申请
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号:US20050269529A1

    公开(公告)日:2005-12-08

    申请号:US11174442

    申请日:2005-06-29

    IPC分类号: G03F7/20 G01J1/00

    摘要: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    摘要翻译: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面,提供了一种EUV计量监测器,其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面,公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面,EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面,公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS
    3.
    发明申请
    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS 有权
    用于保护来自等离子体生物反应器的EUV光源的内部组分的系统

    公开(公告)号:US20060192151A1

    公开(公告)日:2006-08-31

    申请号:US11067099

    申请日:2005-02-25

    IPC分类号: G01J1/00

    摘要: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    摘要翻译: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    EUV light source collector lifetime improvements
    6.
    发明申请
    EUV light source collector lifetime improvements 有权
    EUV光源收集器寿命改善

    公开(公告)号:US20070023705A1

    公开(公告)日:2007-02-01

    申请号:US11168190

    申请日:2005-06-27

    IPC分类号: G01J3/10 H05G2/00

    摘要: An apparatus and method for cleaning a plasma source material compound from a plasma produced EUV light source collector optic which may comprise reacting the plasma source material compound with hydrogen to form a hydride of the plasma source material from the plasma source material contained in the plasma source material compound on the collector optic. The method may further comprise initiating the reacting by introducing hydrogen into a plasma formation chamber containing the collector optic, and may further comprise removing the hydride from the collector optic, e.g., by cleaning plasma action and/or plasma source material sputtering, or other means as may be determined to be effective. An apparatus and method of extending the useful life of a plasma produced EUV light source collector coating layer may comprise in situ replacement of the material of the coating layer by deposition of the coating layer material onto the coating layer.

    摘要翻译: 一种用于从等离子体产生的EUV光源收集器光学元件清洗等离子体源材料化合物的装置和方法,其可以包括使等离子体源材料化合物与氢反应以从等离子体源中包含的等离子体源材料形成等离子体源材料的氢化物 收集器光学元件上的材料化合物。 该方法还可以包括通过将氢引入到包含收集器光学元件的等离子体形成室中来引发反应,并且还可以包括例如通过清洗等离子体作用和/或等离子体源材料溅射或其它方法从收集器光学元件中去除氢化物 可能被确定为有效。 延长等离子体产生的EUV光源集电器涂层的使用寿命的装置和方法可包括通过将涂层材料沉积到涂层上来原位置换涂层的材料。

    Collector for EUV light source
    7.
    发明申请
    Collector for EUV light source 有权
    EUV光源收集器

    公开(公告)号:US20060131515A1

    公开(公告)日:2006-06-22

    申请号:US10798740

    申请日:2004-03-10

    IPC分类号: G01J1/00

    摘要: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

    摘要翻译: 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎屑的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。

    EUV light source
    8.
    发明申请

    公开(公告)号:US20050199829A1

    公开(公告)日:2005-09-15

    申请号:US10900839

    申请日:2004-07-27

    摘要: An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.

    LPP EUV light source
    9.
    发明申请
    LPP EUV light source 失效
    LPP EUV光源

    公开(公告)号:US20050205811A1

    公开(公告)日:2005-09-22

    申请号:US10979919

    申请日:2004-11-01

    摘要: An apparatus and method is described for effectively and efficiently providing plasma irradiation laser light pulses in an LPP EUV light source which may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with an initial target irradiation pulse to form an EUV generating plasma having an emission region emitting in-band EUV light; a laser plasma irradiation pulse generating mechanism irradiating the plasma with a plasma irradiation pulse after the initial target irradiation pulse so as to compress emission material in the plasma toward the emission region of the plasma. The plasma irradiation pulse may comprise a laser pulse having a wavelength that is sufficiently longer than a wavelength of the initial target irradiation pulse to have an associated lower critical density resulting in absorption occurring within the plasma in a region of the plasma defined by the wavelength of the plasma irradiation pulse sufficiently separated from an initial target irradiation site to achieve compression of the emission material, and the may compress the emission region. The laser plasma irradiation pulse may produce an aerial mass density in the ablating cloud of the plasma sufficient to confine the favorably emitting plasma for increased conversion efficiency. The deposition region for the plasma irradiation pulse may be is removed enough from the initial target surface so as to insure compression of the favorably emitting plasma. A high conversion efficiency laser produced plasma extreme ultraviolet (“EUV”) light source may comprise a laser initial target irradiation pulse generating mechanism irradiating a plasma initiation target with a target irradiation pulse to form an EUV generating plasma emitting in-band EUV light; a plasma tamper substantially surrounding the plasma to constrain the expansion of the plasma.

    摘要翻译: 描述了一种用于在LPP EUV光源中有效且有效地提供等离子体照射激光脉冲的装置和方法,其可以包括用初始目标照射脉冲照射等离子体引发目标的激光初始靶照射脉冲发生机构以形成产生EUV的等离子体 具有发射带内EUV光的发射区域; 激光等离子体照射脉冲发生机构在初始目标照射脉冲之后用等离子体照射脉冲照射等离子体,以将等离子体中的发射材料压缩到等离子体的发射区域。 等离子体照射脉冲可以包括具有足够长于初始靶照射脉冲的波长的波长的激光脉冲,以具有相关联的较低的临界密度,从而在由等离子体的波长定义的等离子体的区域内的等离子体内发生吸收 等离子体照射脉冲从初始目标照射位置充分分离,以实现发射材料的压缩,并且可以压缩发射区域。 激光等离子体照射脉冲可以在等离子体的消融云中产生足够的空气质量密度以限制有利的发射等离子体以提高转换效率。 可以从初始目标表面去除等离子体照射脉冲的沉积区域,以确保有利地发射等离子体的压缩。 高转换效率的激光产生的等离子体极紫外(“EUV”)光源可以包括激光初始靶照射脉冲发生机构,用目标照射脉冲照射等离子体引发目标,以形成产生EUV的发射等离子体的带内EUV光; 等离子体篡改基本上围绕等离子体以约束等离子体的膨胀。

    EUV light source
    10.
    发明申请
    EUV light source 有权
    EUV光源

    公开(公告)号:US20070158596A1

    公开(公告)日:2007-07-12

    申请号:US11647007

    申请日:2006-12-27

    IPC分类号: G01J3/10

    摘要: An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

    摘要翻译: 描述了可以包括可以包括等离子体形成室的等离子体产生的极紫外(“EUV”)光源多层收集器的装置和方法; 等离子体形成室内的壳体,具有焦点的收集器形状; 壳体具有足够的尺寸和热质量以将工作热量从多层反射器散开,并且在壳体的与焦点相对的一侧上从壳体的表面辐射热量。 壳的材料可以包括选自可以包括碳化硅,硅,Zerodur或ULE玻璃,铝,铍,钼,铜和镍的组的材料。 装置和方法可以包括指向壳体的至少一个辐射加热器,以将壳体的稳态温度维持在所选择的工作温度范围内。