Laser produced plasma EUV light source
    1.
    发明申请
    Laser produced plasma EUV light source 有权
    激光产生等离子体EUV光源

    公开(公告)号:US20080179548A1

    公开(公告)日:2008-07-31

    申请号:US11786145

    申请日:2007-04-10

    IPC分类号: H05H1/24

    摘要: A device is disclosed which may comprise a system generating a plasma at a plasma site, the plasma producing EUV radiation and ions exiting the plasma. The device may also include an optic, e.g., a multi-layer mirror, distanced from the site by a distance, d, and a flowing gas disposed between the plasma and optic, the gas establishing a gas pressure sufficient to operate over the distance, d, to reduce ion energy below a pre-selected value before the ions reach the optic. In one embodiment, the gas may comprise hydrogen and in a particular embodiment, the gas may comprise greater than 50 percent hydrogen by volume.

    摘要翻译: 公开了一种可以包括在等离子体位置处产生等离子体的系统,等离子体产生EUV辐射和离开等离子体的离子的装置。 该装置还可以包括一个光学元件,例如多个远离现场的多层反射镜,以及设置在等离子体和光学元件之间的流动气体,该气体建立足以在该距离上操作的气体压力, d,在离子到达光学器件之前,将离子能量降低到预先选定的值以下。 在一个实施方案中,气体可以包含氢气,并且在一个具体实施方案中,气体可以包含大于50体积%的氢气。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    2.
    发明申请
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号:US20050269529A1

    公开(公告)日:2005-12-08

    申请号:US11174442

    申请日:2005-06-29

    IPC分类号: G03F7/20 G01J1/00

    摘要: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    摘要翻译: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面,提供了一种EUV计量监测器,其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面,公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面,EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面,公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS
    3.
    发明申请
    SYSTEMS FOR PROTECTING INTERNAL COMPONENTS OF AN EUV LIGHT SOURCE FROM PLASMA-GENERATED DEBRIS 有权
    用于保护来自等离子体生物反应器的EUV光源的内部组分的系统

    公开(公告)号:US20060192151A1

    公开(公告)日:2006-08-31

    申请号:US11067099

    申请日:2005-02-25

    IPC分类号: G01J1/00

    摘要: Systems and methods are disclosed for protecting an EUV light source plasma production chamber optical element surface from debris generated by plasma formation. In one aspect of an embodiment of the present invention, a shield is disclosed which comprises at least one hollow tube positioned between the optical element and a plasma formation site. The tube is oriented to capture debris while allowing light to pass through the tube's lumen via reflection at relatively small angles of grazing incidence. In another aspect of an embodiment of the present invention, a shield is disclosed which is heated to a temperature sufficient to remove one or more species of debris material that has deposited on the shield. In yet another aspect of an embodiment of the present invention, a system is disclosed which a shield is moved from a light source plasma chamber to a cleaning chamber where the shield is cleaned.

    摘要翻译: 公开了用于保护EUV光源等离子体生产室光学元件表面免受等离子体形成产生的碎片的系统和方法。 在本发明的实施例的一个方面,公开了一种屏蔽件,其包括位于光学元件和等离子体形成部位之间的至少一个中空管。 管被定向以捕获碎片,同时允许光以相对较小的掠入射角度的反射通过管的内腔。 在本发明的一个实施例的另一方面,公开了一种屏蔽件,其被加热到足以去除沉积在屏蔽上的一种或多种碎屑材料的温度。 在本发明的一个实施例的另一方面,公开了一种系统,其将屏蔽件从光源等离子体室移动到清洁室,其中屏蔽件被清洁。

    Alternative fuels for EUV light source
    4.
    发明申请
    Alternative fuels for EUV light source 失效
    EUV光源的替代燃料

    公开(公告)号:US20060249699A1

    公开(公告)日:2006-11-09

    申请号:US11406216

    申请日:2006-04-17

    IPC分类号: G01J3/10

    摘要: An EUV light source is disclosed which may comprise at least one optical element having a surface, such as a multi-layer collector mirror; a laser source generating a laser beam; and a source material irradiated by the laser beam to form a plasma and emit EUV light. In one aspect, the source material may consist essentially of a tin compound and may generate tin debris by plasma formation which deposits on the optical element and, in addition, the tin compound may include an element that is effective in etching deposited tin from the optical element surface. Tin compounds may include SnBr4, SnBr2 and SnH4. In another aspect, an EUV light source may comprise a molten source material irradiated by a laser beam to form a plasma and emit EUV light, the source material comprising tin and at least one other metal, for example tin with Gallium and/or Indium.

    摘要翻译: 公开了一种EUV光源,其可以包括具有表面的至少一个光学元件,例如多层收集镜; 产生激光束的激光源; 以及由激光束照射以形成等离子体并发射EUV光的源材料。 在一个方面,源材料可以基本上由锡化合物组成,并且可以通过沉积在光学元件上的等离子体形成而产生锡屑,此外,锡化合物可以包括有效地从光学蚀刻沉积的锡的元素 元素表面。 锡化合物可以包括SnBr 4,SnBr 2和SnH 4。 另一方面,EUV光源可以包括由激光束照射以形成等离子体并发射EUV光的熔融源材料,源材料包含锡和至少一种其它金属,例如锡与镓和/或铟。

    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source
    5.
    发明申请
    Systems and methods for reducing the influence of plasma-generated debris on the internal components of an EUV light source 有权
    用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法

    公开(公告)号:US20070187627A1

    公开(公告)日:2007-08-16

    申请号:US11705954

    申请日:2007-02-13

    IPC分类号: G01J3/10

    摘要: Systems and methods are disclosed for reducing the influence of plasma generated debris on internal components of an EUV light source. In one aspect, an EUV metrology monitor is provided which may have a heater to heat an internal multi-layer filtering mirror to a temperature sufficient to remove deposited debris from the mirror. In another aspect, a device is disclosed for removing plasma generated debris from an EUV light source collector mirror having a different debris deposition rate at different zones on the collector mirror. In a particular aspect, an EUV collector mirror system may comprise a source of hydrogen to combine with Li debris to create LiH on a collector surface; and a sputtering system to sputter LiH from the collector surface. In another aspect, an apparatus for etching debris from a surface of a EUV light source collector mirror with a controlled plasma etch rate is disclosed.

    摘要翻译: 公开了用于减少等离子体产生的碎片对EUV光源的内部部件的影响的系统和方法。 在一个方面,提供了一种EUV计量监测器,其可以具有加热器以将内部多层过滤镜加热到足以从反射镜去除沉积的碎屑的温度。 在另一方面,公开了一种用于从收集器反射镜上的不同区域处具有不同碎屑沉积速率的EUV光源收集镜去除等离子体产生的碎屑的装置。 在特定方面,EUV收集器镜系统可以包括氢源以与Li碎片结合以在收集器表面上产生LiH; 以及从收集器表面溅射LiH的溅射系统。 在另一方面,公开了一种用于从具有受控等离子体蚀刻速率的EUV光源收集镜的表面蚀刻碎片的装置。

    Collector for EUV light source
    8.
    发明申请
    Collector for EUV light source 有权
    EUV光源收集器

    公开(公告)号:US20060131515A1

    公开(公告)日:2006-06-22

    申请号:US10798740

    申请日:2004-03-10

    IPC分类号: G01J1/00

    摘要: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

    摘要翻译: 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎屑的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。

    EUV light source
    9.
    发明申请
    EUV light source 有权
    EUV光源

    公开(公告)号:US20070158596A1

    公开(公告)日:2007-07-12

    申请号:US11647007

    申请日:2006-12-27

    IPC分类号: G01J3/10

    摘要: An apparatus and method is described which may comprise a plasma produced extreme ultraviolet (“EUV”) light source multilayer collector which may comprise a plasma formation chamber; a shell within the plasma formation chamber in the form of a collector shape having a focus; the shell having a sufficient size and thermal mass to carry operating heat away from the multilayer reflector and to radiate the heat from the surface of the shell on a side of the shell opposite from the focus. The material of the shell may comprise a material selected from a group which may comprise silicon carbide, silicon, Zerodur or ULE glass, aluminum, beryllium, molybdenum, copper and nickel. The apparatus and method may comprise at least one radiative heater directed at the shell to maintain the steady state temperature of the shell within a selected range of operating temperatures.

    摘要翻译: 描述了可以包括可以包括等离子体形成室的等离子体产生的极紫外(“EUV”)光源多层收集器的装置和方法; 等离子体形成室内的壳体,具有焦点的收集器形状; 壳体具有足够的尺寸和热质量以将工作热量从多层反射器散开,并且在壳体的与焦点相对的一侧上从壳体的表面辐射热量。 壳的材料可以包括选自可以包括碳化硅,硅,Zerodur或ULE玻璃,铝,铍,钼,铜和镍的组的材料。 装置和方法可以包括指向壳体的至少一个辐射加热器,以将壳体的稳态温度维持在所选择的工作温度范围内。

    EUV light source
    10.
    发明申请

    公开(公告)号:US20050199829A1

    公开(公告)日:2005-09-15

    申请号:US10900839

    申请日:2004-07-27

    摘要: An apparatus and method for EUV light production is disclosed which may comprise a laser produced plasma (“LPP”) extreme ultraviolet (“EUV”) light source control system comprising a target delivery system adapted to deliver moving plasma initiation targets and an EUV light collection optic having a focus defining a desired plasma initiation site, comprising: a target tracking and feedback system comprising: at least one imaging device providing as an output an image of a target stream track, wherein the target stream track results from the imaging speed of the camera being too slow to image individual plasma formation targets forming the target stream imaged as the target stream track; a stream track error detector detecting an error in the position of the target stream track in at least one axis generally perpendicular to the target stream track from a desired stream track intersecting the desired plasma initiation site. At least one target crossing detector may be aimed at the target track and detecting the passage of a plasma formation target through a selected point in the target track. A drive laser triggering mechanism utilizing an output of the target crossing detector to determine the timing of a drive laser trigger in order for a drive laser output pulse to intersect the plasma initiation target at a selected plasma initiation site along the target track at generally its closest approach to the desired plasma initiation site. A plasma initiation detector may be aimed at the target track and detecting the location along the target track of a plasma initiation site for a respective target. An intermediate focus illuminator may illuminate an aperture formed at the intermediate focus to image the aperture in the at least one imaging device. The at least one imaging device may be at least two imaging devices each providing an error signal related to the separation of the target track from the vertical centerline axis of the image of the intermediate focus based upon an analysis of the image in the respective one of the at least two imaging devices. A target delivery feedback and control system may comprise a target delivery unit; a target delivery displacement control mechanism displacing the target delivery mechanism at least in an axis corresponding to a first displacement error signal derived from the analysis of the image in the first imaging device and at least in an axis corresponding to a second displacement error signal derived from the analysis of the image in the second imaging device.