Discharge produced plasma EUV light source

    公开(公告)号:US20070023711A1

    公开(公告)日:2007-02-01

    申请号:US11493945

    申请日:2006-07-26

    IPC分类号: G01J3/10

    摘要: An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis of rotation and an ellipse in another. The electrodes may be supplied with a discharge pulse shaped to produce a modest current during the axial run out phase of the discharge and a peak occurring during the radial compression phase of the discharge. The light source may comprise a turbomolecular pump having an inlet connected to the generation chamber and operable to preferentially pump more of the source gas than the buffer gas from the chamber. The source may comprise a tuned electrically conductive electrode comprising: a differentially doped ceramic material doped in a first region to at least select electrical conductivity and in a second region at least to select thermal conductivity. The first region may be at or near the outer surface of the electrode structure and the ceramic material may be SiC or alumina and the dopant is BN or a metal oxide, including SiO or TiO2. The source may comprise a moveable electrode assembly mount operative to move the electrode assembly mount from a replacement position to an operating position, with the moveable mount on a bellows. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members. The shells may be biased with a voltage. The debris shield may be fabricated using off focus laser radiation. The anode may be cooled with a hollow interior defining two coolant passages or porous metal defining the passages. The debris shield may be formed of pluralities of large, intermediate and small fins attached either to a mounting ring or hub or to each other with interlocking tabs that provide uniform separation and strengthening and do not block any significant amount of light.

    Single chamber gas discharge laser with line narrowed seed beam
    4.
    发明授权
    Single chamber gas discharge laser with line narrowed seed beam 有权
    单室气体放电激光器具有线窄的种子束

    公开(公告)号:US06359922B1

    公开(公告)日:2002-03-19

    申请号:US09421701

    申请日:1999-10-20

    IPC分类号: H01S322

    摘要: A single chamber gas discharge laser system having a pulse power source for producing electrical discharges at the rate of at least 1000 pulses per second. The discharge along with laser optics create two short lived gain media, one for producing a seed beam and the other for amplifying the seed beam. Laser gas circulation around a chamber circulation path is provided and the electrodes and discharges are arranged so that debris from one of the gain media is not circulated to the other gain media during discharges until the debris has made a loop around at least 90% of the chamber circulation path.

    摘要翻译: 具有用于以每秒至少1000个脉冲的速率产生放电的脉冲电源的单室气体放电激光器系统。 放射与激光光学器件一起产生两个短寿命增益介质,一个用于产生种子束,另一个用于放大种子束。 提供了围绕室循环路径的激光气体循环,并且电极和排出物被布置成使得来自增益介质之一的碎屑在排放期间不循环到另一增益介质,直到碎片已经围绕至少90%的循环 室循环路径。

    Collector for EUV light source
    6.
    发明申请
    Collector for EUV light source 有权
    EUV光源收集器

    公开(公告)号:US20060131515A1

    公开(公告)日:2006-06-22

    申请号:US10798740

    申请日:2004-03-10

    IPC分类号: G01J1/00

    摘要: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

    摘要翻译: 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎屑的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。

    Collector for EUV light source
    10.
    发明授权
    Collector for EUV light source 有权
    EUV光源收集器

    公开(公告)号:US07217940B2

    公开(公告)日:2007-05-15

    申请号:US10798740

    申请日:2004-03-10

    IPC分类号: H01J35/20

    摘要: A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.

    摘要翻译: 公开了一种用于从EUV光源中的EUV收集器的反射表面去除碎屑的方法和装置,其可以包括反射表面,其包括第一材料,并且所述碎屑包括第二材料和/或第二材料的化合物,所述系统 并且方法可以包括受控的溅射离子源,其可以包括包含溅射离子材料的原子的气体; 以及将溅射离子材料的原子激发成离子化状态的刺激机构,所选择的离子化状态具有围绕选择的能量峰的分布,其具有溅射第二材料的可能性很高,并且溅射的可能性非常低 材料。 刺激机构可以包括RF或微波感应机构。