摘要:
A high power narrow band, high repetition rate laser light source optical improvement apparatus and methods are disclosed with a fast angularly positionable mirror having a mirror mounting frame, a reflective optic with a coefficient different from that of the mounting frame, at least one flexure mount fromed in the mounting frame that is flexible having flexure arm attached the flexture to the mounting frame. The apparatus may include a flexure force mechanism having an elongated rod. The force mechanism may pre-stress the flexure. The mirror maybe a grating which includes a substrate with metallic layer formed on the substrate, and a protective coating made of silica formed on the reflective metallic layer. The grating maybe actively tuned using an electro- or magneto-sensitive element. Oxides of the metal in the reflective layer may be removed by a hydrogen purge system exposed to deep ultraviolet radiation.
摘要:
An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis of rotation and an ellipse in another. The electrodes may be supplied with a discharge pulse shaped to produce a modest current during the axial run out phase of the discharge and a peak occurring during the radial compression phase of the discharge. The light source may comprise a turbomolecular pump having an inlet connected to the generation chamber and operable to preferentially pump more of the source gas than the buffer gas from the chamber. The source may comprise a tuned electrically conductive electrode comprising: a differentially doped ceramic material doped in a first region to at least select electrical conductivity and in a second region at least to select thermal conductivity. The first region may be at or near the outer surface of the electrode structure and the ceramic material may be SiC or alumina and the dopant is BN or a metal oxide, including SiO or TiO2. The source may comprise a moveable electrode assembly mount operative to move the electrode assembly mount from a replacement position to an operating position, with the moveable mount on a bellows. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members. The shells may be biased with a voltage. The debris shield may be fabricated using off focus laser radiation. The anode may be cooled with a hollow interior defining two coolant passages or porous metal defining the passages. The debris shield may be formed of pluralities of large, intermediate and small fins attached either to a mounting ring or hub or to each other with interlocking tabs that provide uniform separation and strengthening and do not block any significant amount of light.
摘要:
The present invention provides a gas discharge ultraviolet laser capable of producing a high quality pulsed ultraviolet laser beam at pulse rates greater than 2000 Hz at pulse energies at 5 mJ or greater and having an enclosed beam path at least a portion of which comprises an oxidation agent. In a preferred embodiment a portion of the beam path comprises a sealed chamber containing a gas comprising a small concentration of oxygen. In one preferred embodiment the sealed chamber is an etalon chamber and the contained gas is nitrogen with an oxygen concentration of between 1.6 and 2.4 percent. In another preferred embodiments a small concentration of oxygen is added to the purge gas of a special purge compartment containing optical components exposed to high intensity output laser beam.
摘要:
A single chamber gas discharge laser system having a pulse power source for producing electrical discharges at the rate of at least 1000 pulses per second. The discharge along with laser optics create two short lived gain media, one for producing a seed beam and the other for amplifying the seed beam. Laser gas circulation around a chamber circulation path is provided and the electrodes and discharges are arranged so that debris from one of the gain media is not circulated to the other gain media during discharges until the debris has made a loop around at least 90% of the chamber circulation path.
摘要:
An DPP EUV source is disclosed which may comprise a debris mitigation apparatus employing a metal halogen gas producing a metal halide from debris exiting the plasma. The EUV source may have a debris shield that may comprise a plurality of curvilinear shield members having inner and outer surfaces connected by light passages aligned to a focal point, which shield members may be alternated with open spaces between them and may have surfaces that form a circle in one axis or rotation and an ellipse in another. The source may have a temperature control mechanism operatively connected to the collector and operative to regulate the temperature of the respective shell members to maintain a temperature related geometry optimizing the glancing angle of incidence reflections from the respective shell members, or a mechanical positioner to position the shell members.
摘要:
A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.
摘要:
The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.
摘要:
The present invention provides long life optics for a modular, high repetition rate, ultraviolet gas discharge laser systems producing a high repetition rate high power output beam. The invention includes solutions to a surface damage problem discovered by Applicants on CaF2 optics located in high pulse intensity sections of the output beam of prototype laser systems. Embodiments include an enclosed and purged beam path with beam pointing control for beam delivery of billions of output laser pulses. Optical components and modules described herein are capable of controlling ultraviolet laser output pulses with wavelength less than 200 nm with average output pulse intensities greater than 1.75×106 Watts/cm2 and with peak intensity or greater 3.5×106 Watts/cm2 for many billions of pulses as compared to prior art components and modules which failed after only a few minutes in these pulse intensities. Techniques and components are disclosed for minimizing the potential for optical damage and for reducing the pulse energy density to less than 100×10−6 J/cm3. Important improvements described in this specification have been grouped into the following subject matter categories: (1) Solution to CaF2 surface damage discovered by Applicants, (2) description of a high power ArF MOPA laser system, (3) description of beam delivery units, (4) polarization considerations (5) a high speed water-cooled auto shutter energy detector module and (6) other improvements.
摘要翻译:本发明提供了用于产生高重复率高功率输出光束的模块化高重复率紫外线气体放电激光器系统的长寿命光学器件。 本发明包括由申请人发现的位于原型激光系统的输出光束的高脉冲强度部分中的CaF 2光学器件的表面损伤问题的解决方案。 实施例包括用于束传送数十亿个输出激光脉冲的光束指向控制的封闭和清除的光束路径。 本文所述的光学部件和模块能够控制波长小于200nm的紫外激光输出脉冲,平均输出脉冲强度大于1.75×6 /瓦/ cm 2,并且与 与在这些脉冲强度中仅仅几分钟之后失效的现有技术部件和模块相比,数十亿个脉冲的峰值强度或更大的3.5×10 6 / cm 2 / SUP。 公开了用于最小化光学损伤的可能性和将脉冲能量密度降低到小于100×10 -6 / cm 3的技术和部件。 本说明书中描述的重要改进已分为以下主题类别:(1)由申请人发现的CaF 2 2表面损伤的解决方案,(2)高功率ArF MOPA激光系统的描述( 3)光束传输单元的描述,(4)偏振考虑(5)高速水冷自动快门能量检测器模块和(6)其他改进。
摘要:
The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.
摘要:
A method and apparatus for debris removal from a reflecting surface of an EUV collector in an EUV light source is disclosed which may comprise the reflecting surface comprises a first material and the debris comprises a second material and/or compounds of the second material, the system and method may comprise a controlled sputtering ion source which may comprise a gas comprising the atoms of the sputtering ion material; and a stimulating mechanism exciting the atoms of the sputtering ion material into an ionized state, the ionized state being selected to have a distribution around a selected energy peak that has a high probability of sputtering the second material and a very low probability of sputtering the first material. The stimulating mechanism may comprise an RF or microwave induction mechanism.