Collector for EUV light source
    1.
    发明授权
    Collector for EUV light source 失效
    EUV光源收集器

    公开(公告)号:US07288778B2

    公开(公告)日:2007-10-30

    申请号:US11603670

    申请日:2006-11-21

    IPC分类号: H01J35/20

    摘要: It will be understood that an apparatus and method is disclosed, which may comprise a multi-layer reflecting coating forming an EUV reflective surface which may comprise a spectral filter tuned to selectively highly reflect light in a band centered about at a first preferred wavelength and to significantly reduce the reflection of light at a band centered about a second wavelength, e.g., it may be tuned to reflect maximally or almost maximally, near the top of the reflectivity curve, e.g., at around 13.5 nm and at a significantly lower reflectivity at, e.g., around 11 nm, to discriminate against light near 11 nm and favor light at around 13.5 nm. The spectral filter may comprise a plurality of nested grazing angle of incidence shells comprising reflective surfaces comprising the multi-layer reflective coating. e.g. multilayer mirrors, e.g., with one or more reflecting surfaces per shell.

    摘要翻译: 应当理解,公开了一种装置和方法,其可以包括形成EUV反射表面的多层反射涂层,其可以包括调谐为选择性地高度反射在以第一优选波长为中心的带的光的光谱滤光器,并且 显着地减少了在以第二波长为中心的频带处的光的反射,例如,它可以被调谐以在反射率曲线的顶部附近最大或几乎最大程度地反射,例如在大约13.5nm处和在显着较低的反射率处, 例如约11nm,以区分11nm附近的光并有利于约13.5nm的光。 频谱滤波器可以包括多个嵌套的入射角入射壳,包括多层反射涂层的反射表面。 例如 多层反射镜,例如每个壳体具有一个或多个反射表面。

    Laser thin film poly-silicon annealing optical system
    2.
    发明授权
    Laser thin film poly-silicon annealing optical system 有权
    激光薄膜多晶硅退火光学系统

    公开(公告)号:US07009140B2

    公开(公告)日:2006-03-07

    申请号:US10884101

    申请日:2004-07-01

    IPC分类号: B23K26/00

    摘要: A high energy, high repetition rate workpiece surface heating method and apparatus are disclosed which may cmprise a pulsed XeF laser operating at or above 4000 Hz and producing a laser output light pulse beam at a center wavelength of about 351 nm; an optical system narrowing the laser output light pulse beam to less than 20 μm in a short axis of the laser output light pulse beam and expanding the laser output light pulse beam to form in a long axis of the beam a workpiece covering extent of teh long axis; the optical system including a field stop intermediate the laser and the workpiece; the workpiece comprising a layer to be heated; wherein the optical system focuses the laser output light pulse beam at a field stop with a magnification sufficient to maintain an intensity profile that has sufficiently steep sidewalls to allow the field stop to maintain a sufficiently steep beam profile at the workpiece without blocking the beam profile at too high an intensity level. 2. The apparatus may also have a high average power in the laser ouput light pulse beam as delivered to the workpiece and a a linebow correction mechanism in a short axis optical assembly. The linebow correction mechanism may comprise a plurality of weak cross cylinders. The system may comprise a catadioptric projection system. The linewidth due to laser diffraction and divergence may be less than geometric limitations. The system may project adjacent peaks of the nominal XeF spectrum to improve overall depth of focus through the separate center wavelengths of each respective adjacent peak having a different focal plane at the workpiece. The system may comprise a linebow is correction mechanism within a field stop optical assembly correcting linebow at the field stop plane and within a workpiece projection optical assembly correcting linebow at the workpiece plane.

    摘要翻译: 公开了一种高能量,高重复率的工件表面加热方法和装置,其可以使在等于或高于4000Hz的工作的脉冲XeF激光器产生在约351nm的中心波长的激光输出光脉冲光束; 光学系统将激光输出光脉冲光束在激光输出光脉冲光束的短轴上变窄到小于20um,并且扩大激光输出光脉冲光束以在光束的长轴上形成工件覆盖的长度 轴; 该光学系统包括在激光和工件之间的中止场; 所述工件包括待加热层; 其中所述光学系统将所述激光输出光脉冲光束在场停止处以足以保持具有足够陡峭侧壁的强度分布的放大倍数以允许所述场停止在所述工件处保持足够陡峭的光束轮廓而不阻塞所述光束轮廓 强度水平太高 该装置还可以在输送到工件的激光输出光脉冲光束中具有高的平均功率,以及在短轴光学组件中具有弯管校正机构。 弯管矫正机构可以包括多个弱交叉圆筒。 该系统可以包括反折射投影系统。 由激光衍射和发散引起的线宽可能小于几何限制。 该系统可以投射标称XeF谱的相邻峰值,以通过在工件处具有不同焦平面的各个相邻峰值的分开的中心波长来提高整体焦深。 系统可以包括在场停止光学组件中的弯头矫正机构,其在场停止平面处以及工件投影光学组件中在工件平面处校正弯头。

    Laser having baffled enclosure
    4.
    发明授权
    Laser having baffled enclosure 失效
    激光具有挡板外壳

    公开(公告)号:US6021150A

    公开(公告)日:2000-02-01

    申请号:US41832

    申请日:1998-03-12

    摘要: Disclosed is a laser useful in, e.g., photolithography or medical surgery. In one embodiment, the laser comprises a discharge chamber and heat-generating electronics that are enclosed in a baffled enclosure that requires less cooling air to reliably cool the components in the enclosure than previous unbaffled enclosures. A method of reducing the amount of conditioned air is also provided. In a further embodiment, the laser has a heat-exchange system that acts quickly in response to changes in laser gas temperature by adjusting a flow-proportioning valve regulating water flow through a heat exchanger, thereby providing a continuously variable rate of heat exchange through the heat exchanger to maintain the lasing gas temperature constant. Methods of providing a laser beam and of improving the uniformity of a laser beam are disclosed, as are photolithography methods utilizing a laser and method of this invention.

    摘要翻译: 公开了一种可用于例如光刻或医疗手术中的激光。 在一个实施例中,激光器包括放电室和发热电子器件,其封闭在挡板外壳中,其需要较少的冷却空气以可靠地冷却外壳中的部件比先前的未封闭的外壳。 还提供了减少调节空气量的方法。 在另一个实施例中,激光器具有热交换系统,其响应于激光气体温度的变化而快速作用,通过调节调节通过热交换器的水流的流量比例阀,由此通过所述热交换系统提供连续可变的热交换速率 热交换器保持激光温度恒定。 公开了提供激光束并提高激光束的均匀性的方法,以及利用激光的光刻方法和本发明的方法。

    Extreme ultraviolet light source
    5.
    发明授权
    Extreme ultraviolet light source 有权
    极紫外光源

    公开(公告)号:US07642533B2

    公开(公告)日:2010-01-05

    申请号:US11880319

    申请日:2007-07-20

    IPC分类号: H01J35/20

    摘要: The present invention provides a reliable, high-repetition rate, production line compatible high energy photon source. A very hot plasma containing an active material is produced in vacuum chamber. The active material is an atomic element having an emission line within a desired extreme ultraviolet (EUV) range. A pulse power source comprising a charging capacitor and a magnetic compression circuit comprising a pulse transformer, provides electrical pulses having sufficient energy and electrical potential sufficient to produce the EUV light at an intermediate focus at rates in excess of 5 Watts. In preferred embodiments designed by Applicants in-band, EUV light energy at the intermediate focus is 45 Watts extendable to 105.8 Watts.

    摘要翻译: 本发明提供了一种可靠,高重复率的生产线兼容高能光子源。 在真空室中产生含有活性物质的非常热的等离子体。 活性物质是具有期望的极紫外(EUV)范围内的发射线的原子元素。 包括充电电容器和包括脉冲变压器的磁压缩电路的脉冲电源提供电脉冲,其具有足够的能量和电势,足以以超过5瓦的速率在中间焦点处产生EUV光。 在由申请人带内设计的优选实施例中,中间焦点处的EUV光能量可以45瓦可扩展到105.8瓦特。