公开(公告)号：US5876574A

公开(公告)日：1999-03-02

申请号：US842130

申请日：1997-04-23

申请人： Ralf Hofmann ,  Zheng Xu

发明人： Ralf Hofmann ,  Zheng Xu

IPC分类号： C23C14/35 ,  H01J37/34 ,  H01L21/203 ,  H01L21/285 ,  C23C14/00

CPC分类号： H01J37/321 ,  C23C14/35 ,  H01J37/3408 ,  H01J37/3452

摘要： In order to improve the uniformity of erosion of a sputtering chamber target during sputtering, and to prevent re-deposition of target material onto the target surface, the size and shape of the magnet pair above the target is chosen to maximize uniform erosion across the surface of the target. Re-deposition of target material onto the target is particularly a problem during plasma, high pressure sputtering.

摘要翻译： 为了提高溅射时靶溅射的均匀性，为了防止目标材料再次沉积在目标表面上，选择靶材上方的磁体对的尺寸和形状，以使表面上的均匀侵蚀最大化 的目标。 在等离子体，高压溅射中，目标材料的再沉积特别是问题。

公开(公告)号：US09096927B2

公开(公告)日：2015-08-04

申请号：US13584972

申请日：2012-08-14

申请人： Brian West ,  Goichi Yoshidome ,  Ralf Hofmann

发明人： Brian West ,  Goichi Yoshidome ,  Ralf Hofmann

IPC分类号： C23C14/35 ,  C23C14/34 ,  H01J37/34

CPC分类号： C23C14/3407 ,  H01J37/3414 ,  H01J37/3497

摘要： Apparatus and method for physical vapor deposition are provided. In some embodiments, a cooling ring to cool a target in a physical vapor deposition chamber may include an annular body having a central opening; an inlet port coupled to the body; an outlet port coupled to the body; a coolant channel disposed in the body and having a first end coupled to the inlet port and a second end coupled to the outlet port; and a cap coupled to the body and substantially spanning the central opening, wherein the cap includes a center hole.

摘要翻译： 提供了用于物理气相沉积的装置和方法。 在一些实施例中，用于冷却物理气相沉积室中的靶的冷却环可以包括具有中心开口的环形体; 连接到所述主体的入口端口; 连接到所述主体的出口; 冷却剂通道，其设置在所述主体中并且具有联接到所述入口的第一端和联接到所述出口的第二端; 以及联接到所述主体并且基本跨越所述中心开口的盖，其中所述盖包括中心孔。

公开(公告)号：US08782206B2

公开(公告)日：2014-07-15

申请号：US12461848

申请日：2009-08-26

申请人： Ralf Hofmann ,  Andreas Schülke ,  Andreas Siwick ,  Hans-Martin Von Stockhausen

发明人： Ralf Hofmann ,  Andreas Schülke ,  Andreas Siwick ,  Hans-Martin Von Stockhausen

IPC分类号： G06F15/173

CPC分类号： G06F9/505 ,  G06F19/00 ,  G16H40/20

摘要： A method, a system and a computer program are disclosed for the load-balanced allocation of computer-aided medical task flows on at least one application server of a server farm. In at least one embodiment, request conditions and load information are configured in a configuration phase. The request conditions are then recorded in a load balancing phase. In addition the load information is recorded via load calculation agents. A load balancing service can then calculate a target application server, which according to the load information determined meets all recorded request conditions.

摘要翻译： 公开了用于在服务器场的至少一个应用服务器上的计算机辅助医疗任务流的负载平衡分配的方法，系统和计算机程序。 在至少一个实施例中，在配置阶段中配置请求条件和负载信息。 然后将请求条件记录在负载平衡阶段。 此外，通过负载计算代理记录负载信息。 然后，负载平衡服务可以计算目标应用服务器，根据所确定的负载信息满足所有记录的请求条件。

公开(公告)号：US08719778B2

公开(公告)日：2014-05-06

申请号：US11878093

申请日：2007-07-20

申请人： Karlheinz Dorn ,  Ralf Hofmann

发明人： Karlheinz Dorn ,  Ralf Hofmann

IPC分类号： G06F9/44 ,  G06F9/445

CPC分类号： G06F8/00

摘要： A method is disclosed for producing a software application with at least two layers, including a processing layer and a process layer, wherein each layer is encapsulated and hence platform-independent in its execution, the encapsulated layers communicating via an application programming interface. A system is also disclosed for producing an application including a flexible interconnection interface between encapsulated layers. By virtue of the implementation of an additional configurable interconnection interface in the application programming interface between two encapsulated application layers, the architecture layering can be retained regardless of the respective deployment, and only the communication profiles of the interconnection interfaces need be adapted to the deployment. This has the advantage, in at least one embodiment, that it is not necessary to produce and update different source code masters for the different deployments, and instead only one single architecture layering of the application need be created and maintained.

摘要翻译： 公开了一种用于生产具有至少两层的软件应用的方法，包括处理层和处理层，其中每个层被封装，因此在其执行中因此与平台无关，所述封装层经由应用编程接口进行通信。 还公开了一种用于生产包括在封装层之间的柔性互连接口的应用的系统。 通过在两个封装的应用层之间的应用程序编程接口中实现附加的可配置互连接口，可以保留架构分层，而不管相应的部署如何，并且只有互连接口的通信配置需要适应于部署。 这在至少一个实施例中具有以下优点：不需要为不同部署生成和更新不同的源代码主机，而是需要创建和维护应用程序的一个单一架构分层。

公开(公告)号：US20130192524A1

公开(公告)日：2013-08-01

申请号：US13755891

申请日：2013-01-31

申请人： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

发明人： Banqiu Wu ,  Nag B. Patibandla ,  Toshiaki Fujita ,  Ralf Hofmann ,  Pravin K. Narwankar ,  Jeonghoon Oh ,  Srinivas Satya ,  Li-Qun Xia

IPC分类号： H01L21/673

CPC分类号： H01L21/673 ,  C23C16/45546 ,  C23C16/4558 ,  C23C16/4584 ,  C23C16/54 ,  H01L21/67346 ,  H01L21/677

摘要： A processing chamber having a plurality of movable substrate carriers stacked therein for continuously processing a plurality of substrates is provided. The movable substrate carrier is capable of being transported from outside of the processing chamber, e.g., being transferred from a load luck chamber, into the processing chamber and out of the processing chamber, e.g., being transferred into another load luck chamber. Process gases delivered into the processing chamber are spatially separated into a plurality of processing slots, and/or temporally controlled. The processing chamber can be part of a multi-chamber substrate processing system.

摘要翻译： 提供一种处理室，其具有堆叠在其中的多个可移动基板载体，用于连续处理多个基板。 可移动衬底载体能够从处理室的外部传送，例如从负载运送室转移到处理室中并且从处理室中输送，例如被转移到另一负载运送室中。 输送到处理室中的工艺气体在空间上分离成多个处理槽，和/或在时间上被控制。 处理室可以是多室衬底处理系统的一部分。

公开(公告)号：US20120152203A1

公开(公告)日：2012-06-21

申请号：US13323145

申请日：2011-12-12

申请人： Guido Porten ,  Markus Amler ,  Matthias Walz ,  Alexandra Woerz ,  Ralf Hofmann ,  Arthur Pichlkostner

发明人： Guido Porten ,  Markus Amler ,  Matthias Walz ,  Alexandra Woerz ,  Ralf Hofmann ,  Arthur Pichlkostner

IPC分类号： F02B3/00

CPC分类号： F02D41/2096 ,  F02D41/221 ,  F02D41/28 ,  F02D41/402 ,  F02D2041/2051 ,  Y02T10/44

摘要： In a method for operating an injector of an internal combustion engine of a motor vehicle, in which an actuator for driving a component of the injector is provided, the actuator is controlled in such a way that at least two partial injections are brought about within a working cycle of the internal combustion engine. For each partial injection, a starting point in time of the partial injection is ascertained.

摘要翻译： 在一种用于操作机动车辆的内燃机的喷射器的方法中，其中设置有用于驱动喷射器的部件的致动器，致动器被控制为使得至少两次部分喷射在 内燃机的工作循环。 对于每个局部注射，确定部分注射的起始点。

公开(公告)号：US20110226617A1

公开(公告)日：2011-09-22

申请号：US13069205

申请日：2011-03-22

申请人： Ralf Hofmann ,  Majeed A. Foad

发明人： Ralf Hofmann ,  Majeed A. Foad

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/06 ,  C23C14/46

CPC分类号： C23C14/3407 ,  C23C14/0036 ,  C23C14/06 ,  C23C14/354 ,  H01J37/32357 ,  H01J37/34 ,  H05H1/46 ,  H05H2001/4667

摘要： A sputter deposition system comprises a vacuum chamber including a vacuum pump for maintaining a vacuum in the vacuum chamber, a gas inlet for supplying process gases to the vacuum chamber, a sputter target and a substrate holder within the vacuum chamber, and a plasma source attached to the vacuum chamber and positioned remotely from the sputter target, the plasma source being configured to form a high density plasma beam extending into the vacuum chamber. The plasma source may include a rectangular cross-section source chamber, an electromagnet, and a radio frequency coil, wherein the rectangular cross-section source chamber and the radio frequency coil are configured to give the high density plasma beam an elongated ovate cross-section. Furthermore, the surface of the sputter target may be configured in a non-planar form to provide uniform plasma energy deposition into the target and/or uniform sputter deposition at the surface of a substrate on the substrate holder. The sputter deposition system may include a plasma spreading system for reshaping the high density plasma beam for complete and uniform coverage of the sputter target.

摘要翻译： 溅射沉积系统包括真空室，其包括用于在真空室中保持真空的真空泵，用于向真空室供应处理气体的气体入口，真空室内的溅射靶和衬底保持器，以及附着的等离子体源 到真空室并且远离溅射靶定位，等离子体源被配置成形成延伸到真空室中的高密度等离子体束。 等离子体源可以包括矩形横截面源室，电磁体和射频线圈，其中矩形横截面源室和射频线圈被配置为给予高密度等离子体束细长的卵形横截面 。 此外，溅射靶的表面可以被配置为非平面形式，以在衬底保持器上的衬底的表面处提供均匀的等离子体能量沉积到靶中和/或均匀的溅射沉积。 溅射沉积系统可以包括等离子体扩散系统，用于重新形成高密度等离子体束，以完全和均匀地覆盖溅射靶。

公开(公告)号：US20100255660A1

公开(公告)日：2010-10-07

申请号：US12755203

申请日：2010-04-06

申请人： Kaushal K. Singh ,  Ralf Hofmann ,  Nety M. Krishna

发明人： Kaushal K. Singh ,  Ralf Hofmann ,  Nety M. Krishna

IPC分类号： H01L21/363

CPC分类号： H01L21/02568 ,  C23C14/025 ,  C23C14/165 ,  C23C14/185 ,  C23C14/5866 ,  H01L21/02551 ,  H01L21/02565 ,  H01L21/02614 ,  H01L31/0322 ,  Y02E10/541

摘要： A method of forming a solar cell incorporating a compound semiconductor is provided. The compound semiconductor is generally of the “II/VI” variety, and is formed by depositing one or more group II elements in a vapor deposition process, and then contacting the deposited layer with a liquid bath of the group VI elements. The liquid bath may comprise a pure element or a mixture of elements. The contacting is performed under a non-reactive atmosphere, or vacuum, and any fugitive vapors may be captured by a cold trap and recycled. The substrate may be subsequently annealed to remove any excess of the group VI elements, which may be similarly recycled.

摘要翻译： 提供一种形成包含化合物半导体的太阳能电池的方法。 化合物半导体通常为“II / VI”，并且通过在气相沉积工艺中沉积一个或多个II族元素，然后使沉积层与VI族元素的液槽接触而形成。 液体浴可以包含纯元素或元素的混合物。 接触在非反应性气氛或真空下进行，并且任何逸出的蒸气可能被冷阱捕获并再循环。 可以随后将基材退火以除去任何过量的可以类似地再循环的VI族元素。

公开(公告)号：US20080135914A1

公开(公告)日：2008-06-12

申请号：US11771778

申请日：2007-06-29

申请人： Nety M. Krishna ,  Ralf Hofmann ,  Kaushal K. Singh ,  Karl J. Armstrong

发明人： Nety M. Krishna ,  Ralf Hofmann ,  Kaushal K. Singh ,  Karl J. Armstrong

IPC分类号： H01L21/28 ,  H01L29/788

CPC分类号： H01L29/7881 ,  H01L29/40114 ,  H01L29/42332

摘要： In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5×1012 cm−2, preferably, at least about 8×1012 cm−2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.

摘要翻译： 在一个实施例中，提供了一种在衬底上形成金属纳米晶体材料的方法，其包括将衬底暴露于预处理工艺，在衬底上形成隧道电介质层，将衬底暴露于后处理工艺，形成金属纳米晶体 并在所述金属纳米晶层上形成介电覆盖层。 该方法进一步提供形成金属纳米晶层，其纳米晶密度为至少约5×10 12 cm -2，优选至少约8×10 12 / > cm -2。 在一个实例中，金属纳米晶层包含铂，钌或镍。 在另一个实施例中，提供了一种在衬底上形成多层金属纳米晶体材料的方法，其包括形成多个双层，其中每个双层包含沉积在金属纳米晶层上的中间介电层。 一些示例包括10,50,100,200或更多的双层。

公开(公告)号：US20060172536A1

公开(公告)日：2006-08-03

申请号：US11140544

申请日：2005-05-25

申请人： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

发明人： Karl Brown ,  John Pipitone ,  Vineet Mehta ,  Ralf Hofmann

IPC分类号： H01L21/44

CPC分类号： H01J37/3408 ,  C23C14/046 ,  C23C14/345 ,  C23C14/358 ,  H01J37/32082 ,  H01J37/32706 ,  H01L21/2855 ,  H01L21/76843 ,  H01L21/76844

摘要： A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target near a floor of the chamber, introducing a carrier gas into the vacuum chamber, maintaining a target-sputtering plasma at the target to produce a stream comprising at least one of copper atoms and copper ions flowing from the target toward the wafer support pedestal for vapor deposition, and maintaining a wafer-sputtering plasma near the wafer support pedestal by capacitively coupling plasma RF source power to the wafer-sputtering plasma. The frequency of the RF source power is sufficiently high to limit ion energy near the surface of the wafer so that the principal portion of the power provides plasma ion generation. The method further includes maintaining the RF source power at a sufficiently high level to deposit a conformal layer of copper on vertical and horizontal surfaces of the workpiece.

摘要翻译： 在等离子体反应器的真空室中将铜物理气相沉积到集成电路上的方法包括在室的顶部附近提供铜靶，将集成电路晶片放置在面向靶的晶片支撑台座附近， 将载气引入真空室，将目标溅射等离子体保持在目标处，以产生包含从目标流向晶片支撑基座的铜原子和铜离子中的至少一种的气流，用于气相沉积，并保持 通过将等离子体RF源功率电容耦合到晶片溅射等离子体，在晶片支撑基座附近的晶片溅射等离子体。 RF源功率的频率足够高以限制晶片表面附近的离子能量，使得功率的主要部分提供等离子体离子产生。 该方法还包括将RF源功率保持在足够高的水平以将铜的共形层沉积在工件的垂直和水平表面上。