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公开(公告)号：US20080135914A1
公开(公告)日：2008-06-12
申请号：US11771778
申请日：2007-06-29
IPC分类号： H01L21/28 , H01L29/788
CPC分类号： H01L29/7881 , H01L29/40114 , H01L29/42332
摘要： In one embodiment, a method for forming a metallic nanocrystalline material on a substrate is provided which includes exposing a substrate to a pretreatment process, forming a tunnel dielectric layer on the substrate, exposing the substrate to a post-treatment process, forming a metallic nanocrystalline layer on the tunnel dielectric layer, and forming a dielectric capping layer on the metallic nanocrystalline layer. The method further provides forming the metallic nanocrystalline layer having a nanocrystalline density of at least about 5×1012 cm−2, preferably, at least about 8×1012 cm−2. In one example, the metallic nanocrystalline layer contains platinum, ruthenium, or nickel. In another embodiment, a method for forming a multi-layered metallic nanocrystalline material on a substrate is provided which includes forming a plurality of bi-layers, wherein each bi-layer contains an intermediate dielectric layer deposited on a metallic nanocrystalline layer. Some of the examples include 10, 50, 100, 200, or more bi-layers.
摘要翻译： 在一个实施例中，提供了一种在衬底上形成金属纳米晶体材料的方法，其包括将衬底暴露于预处理工艺，在衬底上形成隧道电介质层，将衬底暴露于后处理工艺，形成金属纳米晶体 并在所述金属纳米晶层上形成介电覆盖层。 该方法进一步提供形成金属纳米晶层，其纳米晶密度为至少约5×10 12 cm -2，优选至少约8×10 12 / > cm -2。 在一个实例中，金属纳米晶层包含铂，钌或镍。 在另一个实施例中，提供了一种在衬底上形成多层金属纳米晶体材料的方法，其包括形成多个双层，其中每个双层包含沉积在金属纳米晶层上的中间介电层。 一些示例包括10,50,100,200或更多的双层。
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公开(公告)号：US08283199B2
公开(公告)日：2012-10-09
申请号：US12624668
申请日：2009-11-24
IPC分类号： H01L21/28 , H01L21/312 , H01L31/0224
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods for forming conductive structures on the surfaces of a solar cell. In one embodiment, conductive structures are formed on the front surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing metal layers over the front surface of the solar cell, and performing lift off of the metal layers deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent. In another embodiment, conductive structures are formed on the back surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing a metal layer over the back surface of the solar cell, and performing lift off of the metal layer deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent, and completing selective metallization of the remaining metal lines.
摘要翻译： 本发明的实施例通常提供在太阳能电池的表面上形成导电结构的方法。 在一个实施例中，通过沉积牺牲聚合物层在导电结构的前表面上形成导电结构，通过流体射流在牺牲聚合物中形成图案线，在太阳能电池的前表面上沉积金属层，并执行电梯 通过用水基溶剂溶解牺牲聚合物来沉积在牺牲聚合物上的金属层。 在另一个实施例中，通过沉积牺牲聚合物层，在牺牲聚合物中形成图案化线，经由流体射流，在太阳能电池的背面上沉积金属层，并在 通过用水基溶剂溶解牺牲聚合物，从而沉积在牺牲聚合物上沉积的金属层，并完成其余金属线的选择性金属化。
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公开(公告)号：US20100190290A1
公开(公告)日：2010-07-29
申请号：US12624668
申请日：2009-11-24
IPC分类号： H01L21/3213
CPC分类号： H01L31/022425 , H01L31/068 , H01L31/0682 , H01L31/0747 , Y02E10/547
摘要： Embodiments of the present invention generally provide methods for forming conductive structures on the surfaces of a solar cell. In one embodiment, conductive structures are formed on the front surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing metal layers over the front surface of the solar cell, and performing lift off of the metal layers deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent. In another embodiment, conductive structures are formed on the back surface of a solar cell by depositing a sacrificial polymer layer, forming patterned lines in the sacrificial polymer via a fluid jet, depositing a metal layer over the back surface of the solar cell, and performing lift off of the metal layer deposited over the sacrificial polymer by dissolving the sacrificial polymer with a water based solvent, and completing selective metallization of the remaining metal lines.
摘要翻译： 本发明的实施例通常提供在太阳能电池的表面上形成导电结构的方法。 在一个实施例中，通过沉积牺牲聚合物层在导电结构的前表面上形成导电结构，通过流体射流在牺牲聚合物中形成图案线，在太阳能电池的前表面上沉积金属层，并执行电梯 通过用水基溶剂溶解牺牲聚合物来沉积在牺牲聚合物上的金属层。 在另一个实施例中，通过沉积牺牲聚合物层，在牺牲聚合物中形成图案化线，经由流体射流，在太阳能电池的背面上沉积金属层，并在 通过用水基溶剂溶解牺牲聚合物，从而沉积在牺牲聚合物上沉积的金属层，并完成其余金属线的选择性金属化。
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公开(公告)号：US20070243452A1
公开(公告)日：2007-10-18
申请号：US11734913
申请日：2007-04-13
申请人： Timothy W. Weidman , Karl J. Armstrong , David J. Eaglesham , Nety Krishna , Ralf Hofmann , Michael P. Stewart
发明人： Timothy W. Weidman , Karl J. Armstrong , David J. Eaglesham , Nety Krishna , Ralf Hofmann , Michael P. Stewart
CPC分类号： H01M4/8867 , C23C28/321 , C23C28/322 , C23C28/34 , C23C28/3455 , H01M4/8817 , H01M4/92 , H01M8/0206 , H01M8/021 , H01M8/023 , H01M8/0236 , H01M8/0245 , H01M8/086 , H01M8/1004 , Y02P70/56
摘要： The present invention generally relates to the creation of fuel cell components and the method of forming the various fuel cell components that have an improved lifetime, lower production cost and improved process performance. The invention generally includes treating or conditioning a substrate surface by depositing a material layer, or layers, having good adhesion to the substrate, low electrical resistivity (high conductivity) and has good resistance to chemical attack during the operation of fuel cell. The substrate may be, for example, a fuel cell part, a conductive plate, a separator plate, a bipolar plate or an end plate, among others. In one embodiment, the substrate surface is treated or conditioned by exposing at least a portion of it to a gas or liquid comprising ruthenium tetroxide.
摘要翻译： 本发明一般涉及燃料电池部件的制造和形成具有改善的寿命，降低生产成本和改进工艺性能的各种燃料电池部件的方法。 本发明通常包括通过沉积对基材具有良好粘附性的材料层或低层电阻（高导电性）并且在燃料电池操作期间具有良好的抗化学侵蚀性能来处理或调理基材表面。 基板可以是例如燃料电池部件，导电板，隔板，双极板或端板等。 在一个实施方案中，通过将其至少一部分暴露于包含四氧化钌的气体或液体来处理或调理基底表面。
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公开(公告)号：US09206512B2
公开(公告)日：2015-12-08
申请号：US13528906
申请日：2012-06-21
IPC分类号： C23C16/455 , F17D1/00
CPC分类号： C23C16/455 , C23C16/45565 , F17D1/00 , Y10T137/8593
摘要： In some embodiments, a gas distribution system may include a body disposed within a through hole formed in a process chamber body, the body comprising an opening, wherein an outer surface of the body is disposed a first distance from an inner surface of the through hole to form a first gap; a flange disposed proximate a first end of the body, the flange having an outer dimension greater than an inner dimension of the through hole; a showerhead disposed proximate a second end of the body opposite the first end and extending outwardly from the body to overlap a portion of the process chamber body, the showerhead configured to allow a flow of gas to an inner volume of the process chamber, wherein an outer surface of the showerhead is disposed a second distance from an inner surface of the process chamber body to form a second gap.
摘要翻译： 在一些实施例中，气体分配系统可以包括设置在形成在处理室主体中的通孔内的主体，主体包括开口，其中主体的外表面与通孔的内表面第一距离设置 形成第一个差距; 靠近所述主体的第一端设置的凸缘，所述凸缘具有大于所述通孔的内部尺寸的外部尺寸; 淋浴头，其设置在所述主体的与所述第一端相对的第二端附近并且从所述主体向外延伸以与所述处理室主体的一部分重叠，所述喷头构造成允许气体流动到所述处理室的内部容积，其中， 淋浴喷头的外表面与处理室主体的内表面设置成第二距离，以形成第二间隙。
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公开(公告)号：US4994162A
公开(公告)日：1991-02-19
申请号：US415083
申请日：1989-09-29
IPC分类号： C23C14/04 , C23C14/54 , H01L21/768
CPC分类号： C23C14/541 , C23C14/046 , H01L21/7684 , H01L21/76877
摘要： A three step planarization method for planarizing aluminum or aluminum alloy in via and trench features of a wafer includes first, high rate deposition in the absence of heat, followed by low rate deposition in the presence of heat, and finally, high rate deposition with continued supply of heat to the wafer. Bias may be used. Deposition is preferably continuous and uninterrupted from the beginning of the first step until the end of the third step. The first step is limited in duration in order to produce a relatively thin layer which geometrically covers the inside surfaces of the feature. The duration of the second step is selectable, but is preferably based upon the temperature of the heat applied to the wafer and a characteristic size of the feature. The third step deposition completes the thickness of the film.
摘要翻译： 用于平坦化铝或铝合金的通孔和沟槽特征的三阶平面化方法包括在不存在热的情况下的第一高速沉积，然后在存在热的情况下低速沉积，最后，高速沉积 向晶片供应热量。 可以使用偏差。 从第一步骤开始到第三步骤结束，沉积优选是连续的和不间断的。 第一步是限制持续时间以产生几何地覆盖特征的内表面的相对薄的层。 第二步的持续时间是可选择的，但优选地基于施加到晶片的热的温度和特征的特征尺寸。 第三步沉积完成膜的厚度。
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