公开(公告)号：US20250133824A1

公开(公告)日：2025-04-24

申请号：US18834712

申请日：2023-01-27

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Tatsuya ONUKI ,  Kiyoshi KATO ,  Hitoshi KUNITAKE ,  Ryota HODO ,  Shunpei YAMAZAKI

IPC: H10D86/40 ,  H10D30/67 ,  H10D64/68

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. First to second transistors share a first metal oxide over a first insulator and a first conductor over the first metal oxide; the first transistor includes a second conductor and a second insulator which are over the first metal oxide and a third conductor over the second insulator; the second transistor includes a fourth conductor and a third insulator which are over the first metal oxide and a fifth conductor over the third insulator; a side surface of the first insulator includes a portion in contact with the fourth conductor; an end portion of the fourth conductor includes a portion positioned outward from an end portion of the first insulator; the second insulator is positioned between the first conductor and the second conductor; the metal oxide and the third conductor overlap with each other with the second insulator therebetween; the third insulator is positioned between the first conductor and the fourth conductor; and the metal oxide and the fifth conductor overlap with each other with the third insulator therebetween.

公开(公告)号：US20250132251A1

公开(公告)日：2025-04-24

申请号：US18989697

申请日：2024-12-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Akio SUZUKI ,  Atsushi MIYAGUCHI ,  Shunpei YAMAZAKI

IPC: H01L23/528 ,  H01L23/31 ,  H01L23/367 ,  H10D30/67

Abstract: A semiconductor device having a novel structure is provided. The semiconductor device includes a silicon substrate and a device provided above the silicon substrate. The device includes a transistor and a conductor. The transistor includes a metal oxide in a channel formation region. Conductivity is imparted to the silicon substrate. The conductor is electrically connected to each of a drain of the transistor and the silicon substrate through an opening provided in the device. Heat of the drain of the transistor can be efficiently released through the silicon substrate.

公开(公告)号：US12283634B2

公开(公告)日：2025-04-22

申请号：US18612650

申请日：2024-03-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Masami Jintyou ,  Yukinori Shima

IPC: H01L29/786 ,  H01L29/423 ,  H01L29/66

Abstract: The semiconductor device includes a first insulating layer, a second insulating layer, an oxide semiconductor layer, and first to third conductive layers. The first conductive layer and the second conductive layer are connected to the oxide semiconductor layer. The second insulating layer includes a region in contact with the oxide semiconductor layer, and the third conductive layer includes a region in contact with the second insulating layer. The oxide semiconductor layer includes first to third regions. The first region and the second region are separated from each other, and the third region is located between the first region and the second region. The third region and the third conductive layer overlap with each other with the second insulating layer located therebetween. The first region and the second region include a region having a higher carbon concentration than the third region.

公开(公告)号：US20250126968A1

公开(公告)日：2025-04-17

申请号：US18906491

申请日：2024-10-04

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Nobuharu OHSAWA ,  Toshiki SASAKI ,  Shinya FUKUZAKI ,  Hiromi SEO

IPC: H10K50/17 ,  H10K50/19 ,  H10K85/60 ,  H10K101/40

Abstract: A light-emitting device with favorable characteristics is provided. In a plurality of light-emitting devices each including an organic compound layer formed over the same insulating surface, the organic compound layer includes a first light-emitting layer, a second light-emitting layer, and an intermediate layer. The intermediate layer includes a first layer. The first layer includes a metal or metal compound, a first organic compound, and a second organic compound. The first organic compound includes a π-electron deficient heteroaromatic ring. The second organic compound includes two or more heteroaromatic rings that are bonded or condensed to each other and include three or more heteroatoms in total. The second organic compound interacts with the metal or metal compound by two or more of the three or more heteroatoms as a multidentate ligand.

公开(公告)号：US20250124962A1

公开(公告)日：2025-04-17

申请号：US19002110

申请日：2024-12-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO

IPC: G11C11/405 ,  G11C16/04 ,  H10B12/00 ,  H10B41/20 ,  H10B41/70 ,  H10B69/00 ,  H10D30/60 ,  H10D30/67 ,  H10D62/40 ,  H10D62/80 ,  H10D62/83 ,  H10D84/03 ,  H10D84/90 ,  H10D86/40 ,  H10D86/60 ,  H10D87/00 ,  H10D88/00

Abstract: An object is to provide a semiconductor device with a novel structure. The semiconductor device includes a first wiring; a second wiring; a third wiring; a fourth wiring; a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; and a second transistor having a second gate electrode, a second source electrode, and a second drain electrode. The first transistor is provided in a substrate including a semiconductor material. The second transistor includes an oxide semiconductor layer.

公开(公告)号：US20250123483A1

公开(公告)日：2025-04-17

申请号：US18985601

申请日：2024-12-18

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Yosuke TSUKAMOTO ,  Kiyoshi KATO ,  Tatsuya ONUKI ,  Yoshiaki OIKAWA ,  Kensuke YOSHIZUMI

IPC: G02B27/00 ,  G02B27/01

Abstract: Provided is a multifunctional display device or a multifunctional electronic device. Provided is a display device or electronic device with high visibility. Provided is a display device or electronic device with low power consumption. The electronic device includes a housing, a display device, a system unit, a camera, a secondary battery, a reflective surface, and a wearing tool. The system unit and the secondary battery are each positioned inside the housing. The system unit includes a charging circuit unit. The charging circuit unit is configured to control charging of the secondary battery. The system unit is configured to perform first processing based on imaging data of the camera. The first processing includes at least one of gesture operation, head tracking, and eye tracking. The system unit is configured to generate image data based on the first processing. The display device is configured to display the image data.

公开(公告)号：US12278291B2

公开(公告)日：2025-04-15

申请号：US17296358

申请日：2019-11-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Kentaro Sugaya ,  Ryota Hodo ,  Kenichiro Makino ,  Shuhei Nagatsuka

IPC: H01L29/786 ,  H01L21/308 ,  H01L27/12 ,  H01L29/66

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a plurality of transistors; each of the plurality of transistors includes a first insulator, a first oxide, a second oxide, a first conductor, a second conductor, a third oxide, a second insulator, and a third conductor; the third oxide included in one of the plurality of transistors and the third oxide included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors, are provided to be apart from each other in the channel width direction of the plurality of transistors; the second insulator included in one of the plurality of transistors includes a region continuous with the second insulator included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors; and the third conductor included in one of the plurality of transistors includes a region continuous with the third conductor included in another of the plurality of transistors, which is adjacent to the one of the plurality of transistors.

公开(公告)号：US20250120299A1

公开(公告)日：2025-04-10

申请号：US18917737

申请日：2024-10-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tsunenori SUZUKI ,  Naoaki HASHIMOTO ,  Eriko SAIJO ,  Satoshi SEO

IPC: H10K85/30 ,  H10K50/11 ,  H10K50/13 ,  H10K50/16 ,  H10K85/60 ,  H10K101/00 ,  H10K101/10 ,  H10K101/30

Abstract: A light-emitting element which includes a plurality of light-emitting layers between a pair of electrodes and has low driving voltage and high emission efficiency is provided. A light-emitting element including first to third light-emitting layers between a cathode and an anode is provided. The first light-emitting layer includes a first phosphorescent material and a first electron-transport material; the second light-emitting layer includes a second phosphorescent material and a second electron-transport material; the third light-emitting layer includes a fluorescent material and a third electron-transport material; the first to third light-emitting elements are provided in contact with an electron-transport layer positioned on a cathode side; and a triplet excitation energy level of a material included in the electron-transport layer is lower than triplet excitation energy levels of the first electron-transport material and the second electron-transport material.

公开(公告)号：US20250120278A1

公开(公告)日：2025-04-10

申请号：US18979744

申请日：2024-12-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Takahiro ISHISONE ,  Satoshi SEO ,  Yusuke NONAKA ,  Nobuharu OHSAWA

IPC: H10K59/35 ,  H10K50/11 ,  H10K50/12 ,  H10K50/13 ,  H10K50/15 ,  H10K50/16 ,  H10K50/17 ,  H10K50/18 ,  H10K50/81 ,  H10K50/828 ,  H10K50/84 ,  H10K50/85 ,  H10K50/86 ,  H10K59/12 ,  H10K85/30 ,  H10K85/60 ,  H10K101/10 ,  H10K101/30

Abstract: A multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application is provided. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance and a second light-emitting layer containing two kinds of organic compounds and a substance that can convert triplet excitation energy into luminescence. Note that light emitted from the first light-emitting layer has an emission peak on the shorter wavelength side than light emitted from the second light-emitting layer.

公开(公告)号：US20250120181A1

公开(公告)日：2025-04-10

申请号：US18982263

申请日：2024-12-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yutaka SHIONOIRI ,  Hiroyuki MIYAKE ,  Kiyoshi KATO

IPC: H10D86/80 ,  G11C16/04 ,  H10B41/70 ,  H10B69/00 ,  H10D30/67 ,  H10D86/40 ,  H10D86/60

Abstract: It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film.