公开(公告)号：US20160207758A1

公开(公告)日：2016-07-21

申请号：US14914015

申请日：2014-08-26

Applicant: SILEX MICROSYSTEMS AB

Inventor： Edvard KALVESTEN ,  Thorbjorn EBEFORS ,  Niklas SVEDIN

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B2201/01 ,  B81B2201/0264 ,  B81B2201/0271 ,  B81B2203/0118 ,  B81B2203/0127 ,  B81B2207/095 ,  B81C1/00301 ,  B81C2201/0153 ,  B81C2201/036 ,  B81C2203/0109 ,  B81C2203/0145 ,  H01L21/50 ,  H01L23/08 ,  H01L24/94 ,  H01L2924/16235

Abstract: A device includes a base substrate (700) with a micro component (702) attached thereto. Suitably it is provided with routing elements (704) for conducting signals to and from the component (702). It also includes spacer members (706) which also can act as conducting structures for routing signals vertically. There is a capping structure (708) of a glass material, provided above the base substrate (700), bonded via the spacer members (706), preferably by eutectic bonding, wherein the capping structure (708) includes vias (710) including metal for providing electrical connection through the capping structure. The vias can be made by a stamping/pressing method entailing pressing needles under heating to soften the glass and applying pressure, to a predetermined depth in the glass. However, other methods are possible, e-g- drilling, etching, blasting.

Abstract translation: 一种装置包括具有附接到其上的微型部件（702）的基底（700）。 适当地，它设置有用于向组件（702）进行信号的路由选择元件（704）。 它还包括间隔件（706），其也可以用作垂直路线信号的导电结构。 优选地通过共晶接合，通过间隔件（706），设置在基底基板（700）上方的玻璃材料的封盖结构（708），其中封盖结构（708）包括通孔（710），包括金属 用于提供通过封盖结构的电连接。 通孔可以通过冲压/压制方法制成，在加热下需要加压针，使玻璃软化并施加压力至玻璃中预定的深度。 然而，其他方法是可行的，例如钻孔，蚀刻，爆破。

公开(公告)号：US20150370063A1

公开(公告)日：2015-12-24

申请号：US14410211

申请日：2013-06-12

Applicant: SILEX MICROSYSTEMS AB

Inventor： Peter AGREN

IPC: G02B26/08 ,  B81B3/00 ,  G01D5/24 ,  B81C1/00

CPC classification number: G02B26/0841 ,  B81B3/0021 ,  B81B3/0045 ,  B81B2201/02 ,  B81B2201/03 ,  B81B2203/04 ,  B81C1/00357 ,  B81C1/00619 ,  G01D5/24 ,  G02B26/085 ,  H01L23/481 ,  H01L23/5225 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device, includes a semiconductor substrate (10) having a first (12a) and a second (12b) side. There is provided at least one via (15) extending through the substrate (10) having first (16a) and second (16b) end surfaces, the first end surface (16a) constituting a transducer electrode for interacting with a movable element (14) arranged at the first side (12a) of the substrate (10). A shield (17) is provided on and covers at least part of the first side (12a) of the substrate (10), the shield/mask (17) including a conductive layer (19a) and an insulating material layer (19b) provided between the substrate (10) and the conductive layer (19a). The mask has an opening (18) exposing only a part of the first surface (16a) of the via. Preferably the opening (18) in the mask is precisely aligned with the movable element, and the area of the opening is accurately defined.

Abstract translation: 半导体器件包括具有第一（12a）和第二（12b）侧的半导体衬底（10）。 提供至少一个通过具有第一（16a）和第二（16b）端面的衬底（10）延伸的通孔（15），第一端面（16a）构成用于与可移动元件（14）相互作用的换能器电极， 布置在基板（10）的第一侧（12a）处。 在衬底（10）的第一侧（12a）的至少一部分上设置有屏蔽（17），所述屏蔽/掩模（17）包括导电层（19a）和绝缘材料层（19b） 在所述基板（10）和所述导电层（19a）之间。 掩模具有仅露出通孔的第一表面（16a）的一部分的开口（18）。 优选地，掩模中的开口（18）与可移动元件精确对准，并且开口的区域被精确地限定。

公开(公告)号：US20150028479A1

公开(公告)日：2015-01-29

申请号：US14384606

申请日：2013-03-12

Applicant: SILEX MICROSYSTEMS AB

Inventor： Thorbjörn Ebefors ,  Daniel Perttu

IPC: H01L23/498 ,  H01L21/768 ,  H01L23/522

CPC classification number: H01L23/49827 ,  H01L21/30625 ,  H01L21/308 ,  H01L21/486 ,  H01L21/76879 ,  H01L21/76898 ,  H01L23/147 ,  H01L23/481 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/5226 ,  H01L23/525 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13 ,  H01L2224/13023 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/1461 ,  H01L2224/13099 ,  H01L2224/05099 ,  H01L2224/05599 ,  H01L2924/00 ,  H01L2224/05552

Abstract: The invention relates to a semiconductor structure, comprising a substrate of a semiconductor material having a first side (FS) and an opposite second side (BS). There is at least one conductive wafer-through via (V) comprising metal, and at least one recess (RDL) provided in the first side of the substrate and in the semiconductor material of the substrate. The recess is filled with metal and seamlessly connected with the wafer-through via. The exposed surfaces of the metal filled via and the metal filled recess are essentially flush with the substrate surface on the first side of the substrate. There is also provide an interposer comprising the above structure, further comprising contacts for attaching circuit boards and integrated circuits on opposite sides of the interposer. A method of making the structure is also provided.

Abstract translation: 本发明涉及一种半导体结构，其包括具有第一侧（FS）和相对的第二侧（BS）的半导体材料的衬底。 存在至少一个包含金属的导电晶片通孔（V）和设置在衬底的第一侧和衬底的半导体材料中的至少一个凹部（RDL）。 凹槽填充有金属并与晶片通孔无缝连接。 填充通孔的金属和填充有金属的凹槽的暴露表面基本上与衬底的第一侧上的衬底表面齐平。 还提供一种包括上述结构的插入器，还包括用于将电路板和集成电路附接到插入器的相对侧上的触点。 还提供了制造该结构的方法。