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21.发明授权公开(公告)号：US07365380B2
公开(公告)日：2008-04-29
申请号：US11214846
申请日：2005-08-31
IPC分类号： H01L31/62 , H01L31/105
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14643 , H01L31/035281 , H01L31/03529
摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate,voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).
摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。
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22.发明授权公开(公告)号：US07323731B2
公开(公告)日：2008-01-29
申请号：US11003444
申请日：2004-12-06
IPC分类号： H01L31/113
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2
摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C 1，与第二杂质区域中的杂质浓度的峰值对应的浓度C 2和与第二杂质区域中的杂质浓度的峰值相对应的浓度C 3 第三杂质区满足以下关系：<？in-line-formula description =“In-line formula”end =“lead”？> C2
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23.发明授权公开(公告)号：US07205523B2
公开(公告)日：2007-04-17
申请号：US11369819
申请日：2006-03-08
申请人： Ryuichi Mishima , Seiichi Tamura , Koichi Tazoe
发明人： Ryuichi Mishima , Seiichi Tamura , Koichi Tazoe
CPC分类号： H01L27/14689 , H01L27/14601 , H04N5/35581 , H04N5/37452 , H04N5/378
摘要： The solid state image pickup device includes a pixel, the pixel including: a photoelectric conversion region for generating carrier by photoelectric conversion and accumulating the carrier; a carrier holding region for accumulating carrier flowing out from the photoelectric conversion region during the photoelectric conversion region generates and accumulates carrier; a source follower amplifier SF-MOS for amplifying carrier; a transfer MOS transistor Tx-MOS for transferring the carrier accumulated in the photoelectric conversion region to the source follower amplifier SF-MOS; and a transfer MOS transistor Ty-MOS for transferring the carrier accumulated in the carrier holding region to the source follower amplifier SF-MOS. The carrier holding region is formed so as to have a trench structure.
摘要翻译： 固态摄像装置包括像素，该像素包括：光电转换区域，用于通过光电转换产生载体并累积载体; 载流子保持区域，用于在光电转换区域产生并积累载流子的同时积聚从光电转换区域流出的载流子; 用于放大载波的源极跟随器放大器SF-MOS; 用于将积累在光电转换区域中的载流子传送到源极跟随器放大器SF-MOS的转移MOS晶体管Tx-MOS; 以及用于将载波保持区域中累积的载波传送到源极跟随器放大器SF-MOS的转移MOS晶体管Ty-MOS。 载流子保持区域形成为具有沟槽结构。
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24.发明申请Semiconductor substrate for solid-state image pickup device and producing method therefor 有权用于固态图像拾取装置的半导体衬底及其制造方法公开(公告)号：US20060124929A1
公开(公告)日：2006-06-15
申请号：US11291955
申请日：2005-12-02
IPC分类号： H01L31/0376
CPC分类号： H01L27/146 , H01L27/14698 , H01L31/03682 , H01L31/182 , Y02P70/521
摘要： A semiconductor substrate for forming a pixel area provided surfacially with a plurality of pixels for photoelectric conversion, the semiconductor substrate, including a polysilicon film of a thickness of 0.5-2.0, on a rear surface of the pixel area-bearing surface, and having an oxygen concentration of 1.3-1.5E+18 atom/cm3 (old ASTM).
摘要翻译： 一种用于形成像素区域的半导体衬底，其具有多个用于光电转换的像素，所述半导体衬底包括厚度为0.5-2.0的多晶硅膜，在像素区域承载表面的后表面上，并且具有 氧浓度为1.3E18-1.5E18原子/ cm 3（旧ASTM）。
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25.发明申请公开(公告)号：US20060043442A1
公开(公告)日：2006-03-02
申请号：US11214846
申请日：2005-08-31
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14643 , H01L31/035281 , H01L31/03529
摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate,voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).
摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。
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26.发明授权Heating resistor film, recording head substrate, recording head, and recording apparatus 有权加热电阻膜，记录头基板，记录头和记录装置公开(公告)号：US06964471B2
公开(公告)日：2005-11-15
申请号：US10270527
申请日：2002-10-16
CPC分类号： B41J2/14129 , B41J2202/03
摘要： To provide a heating resistor film having a sufficiently high durability to repetitive pulse applications, a recording head substrate including the heating resistor film, a recording head, and a recording apparatus. A heating resistor film that generates heat energy using currents flowing from a wire in a heat acting portion of a recording head substrate, is made of amorphous tantalum silicon nitride having a sheet resistance of 200 Ω/□ to 400 Ω/□, and has a thickness of 30 nm to 80 nm.
摘要翻译： 为了提供对重复脉冲应用具有足够高的耐久性的加热电阻膜，包括加热电阻膜，记录头和记录装置的记录头基板。 使用从记录头基板的热作用部分中的线流动的电流产生热能的加热电阻膜由具有200Ω/□至400Ω/□的薄层电阻的非晶态氮化钽氮化硅制成，并且具有 厚度为30nm至80nm。
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27.发明授权公开(公告)号：US08754969B2
公开(公告)日：2014-06-17
申请号：US13473460
申请日：2012-05-16
CPC分类号： H01L27/14607 , H01L27/14609 , H01L27/14623 , H01L27/14627
摘要： In a photoelectric conversion apparatus including a plurality of focus detection pixels, each focus detection pixel including a photoelectric conversion element, the photoelectric conversion element having a light receiving surface, and a plurality of wiring layers to read a signal supplied by the photoelectric conversion element, the photoelectric conversion apparatus further includes a light shielding film covering a part of the photoelectric conversion element and having the lower surface positioned closer to a plane, which includes a light receiving surface of the photoelectric conversion element and which is parallel to the light receiving surface, than a lower surface of the lowermost one of the plurality of wiring layers.
摘要翻译： 在包括多个焦点检测像素的光电转换装置中，每个焦点检测像素包括光电转换元件，具有光接收表面的光电转换元件和用于读取由光电转换元件提供的信号的多个布线层， 光电转换装置还包括覆盖光电转换元件的一部分并且具有更靠近平面的下表面的遮光膜，该平面包括光电转换元件的光接收表面并且平行于光接收表面， 而不是多个布线层中的最下面的下表面。
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28.发明授权公开(公告)号：US07994552B2
公开(公告)日：2011-08-09
申请号：US12041738
申请日：2008-03-04
IPC分类号： H01L27/146
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14621 , H01L27/14636 , H01L27/14643 , H01L31/035281 , H01L31/03529
摘要： An object of the present invention is to provide a photoelectric conversion device, wherein improvement of charge transfer properties when charge is output from a charge storage region and suppression of dark current generation during charge storage are compatible with each other. This object is achieved by forming a depletion voltage of a charge storage region in the range from zero to one half of a power source voltage (V), forming a gate voltage of a transfer MOS transistor during a charge transfer period in the range from one half of the power source voltage to the power source voltage (V) and forming a gate voltage of the transfer MOS transistor during a charge storage period in the range from minus one half of the power source voltage to zero (V).
摘要翻译： 本发明的目的是提供一种光电转换装置，其中，当从电荷存储区域输出电荷时的电荷转移特性的提高和电荷存储期间的暗电流产生的抑制相互兼容。 该目的通过在电源电压（V）的零到一半的范围内形成电荷存储区域的耗尽电压来实现，在电荷转移期间形成转移MOS晶体管的栅极电压，范围为1 电源电压的一半与电源电压（V）成正比，并且在从电源电压的负一半到零（V）的范围内的电荷存储期间形成转移MOS晶体管的栅极电压。
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公开(公告)号：US20100219497A1
公开(公告)日：2010-09-02
申请号：US12779471
申请日：2010-05-13
IPC分类号： H01L31/101
CPC分类号： H01L27/14601 , H01L27/14609 , H04N5/335
摘要： The present invention, in a photoelectric conversion device in which a pixel including a photoelectric conversion device for converting a light into a signal charge and a peripheral circuit including a circuit for processing the signal charge outside a pixel region in which the pixel are disposed on the same substrate, comprising: a first semiconductor region of a first conductivity type for forming the photoelectric region, the first semiconductor region being formed in a second semiconductor region of a second conductivity type; and a third semiconductor region of the first conductivity type and a fourth semiconductor region of the second conductivity type for forming the peripheral circuit, the third and fourth semiconductor regions being formed in the second semiconductor region; wherein in that the impurity concentration of the first semiconductor region is higher than the impurity concentration of the third semiconductor region.
摘要翻译： 本发明涉及一种光电转换装置，其中包括用于将光转换为信号电荷的光电转换装置的像素和包括用于处理信号电荷的电路的外围电路的像素， 相同的衬底，包括：用于形成光电区域的第一导电类型的第一半导体区域，第一半导体区域形成在第二导电类型的第二半导体区域中; 以及第一导电类型的第三半导体区域和用于形成外围电路的第二导电类型的第四半导体区域，所述第三和第四半导体区域形成在所述第二半导体区域中; 其中，所述第一半导体区域的杂质浓度高于所述第三半导体区域的杂质浓度。
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30.发明授权公开(公告)号：US07679116B2
公开(公告)日：2010-03-16
申请号：US12326138
申请日：2008-12-02
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14687 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A photoelectric conversion device comprising a semiconductor substrate of a first conduction type, and a photoelectric conversion element having an impurity region of the first conduction type and a plurality of impurity regions of a second conduction type opposite to the first conduction type. The plurality of second-conduction-type impurity regions include at least a first impurity region, a second impurity region provided between the first impurity region and a surface of the substrate, and a third impurity region provided between the second impurity region and the surface of the substrate. A concentration C1 corresponding to a peak of the impurity concentration in the first impurity region, a concentration C2 corresponding to a peak of the impurity concentration in the second impurity region and a concentration C3 corresponding to a peak of the impurity concentration in the third impurity region satisfy the following relationship: C2
摘要翻译： 一种光电转换装置，包括第一导电类型的半导体衬底和具有第一导电类型的杂质区和与第一导电类型相反的第二导电类型的多个杂质区的光电转换元件。 多个第二导电型杂质区域至少包括第一杂质区域，设置在第一杂质区域和衬底表面之间的第二杂质区域和设置在第二杂质区域和第二杂质区域的表面之间的第三杂质区域 底物。 对应于第一杂质区域中的杂质浓度的峰值的浓度C1，与第二杂质区域中的杂质浓度的峰值对应的浓度C2和与第三杂质区域中的杂质浓度的峰值相对应的浓度C3 满足以下关系：C2
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