公开(公告)号：US20190288295A1

公开(公告)日：2019-09-19

申请号：US16238957

申请日：2019-01-03

申请人： Seung-ki Joo

发明人： Seung-ki Joo

IPC分类号： H01M4/80 ,  H01M10/052 ,  H01M4/38 ,  H01M4/66

摘要： Provided is a lithium negative electrode having metal foam capable of significantly improving the safety and reliability of a lithium secondary battery by suppressing volume expansion and consumption of a lithium material due to charge/discharge repetition of the lithium secondary battery, and a lithium secondary battery using the lithium negative electrode. The negative electrode for a lithium secondary battery includes: a negative electrode current collector made of metal foam having a plurality of pores whose inner portions are empty; and a lithium thin film attached to a rear surface of the electrode current collector.

公开(公告)号：US20130273724A1

公开(公告)日：2013-10-17

申请号：US13630148

申请日：2012-10-16

申请人： Seung Ki Joo

发明人： Seung Ki JOO ,  Chang Woo BYUN ,  Se Wan SON ,  Yong Woo LEE ,  Hyun Mo KANG ,  Seol Ah PARK ,  Woo Chang LIM ,  Tao LI ,  Seung Jae YUN ,  Sang Joo LEE

IPC分类号： H01L21/20

CPC分类号： H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L29/66757

摘要： Provided is a method of crystallizing an amorphous silicon thin film transistor and a method of fabricating a polycrystalline thin film transistor using the same, in which the polycrystalline thin film transistor indicating leakage current characteristics of a level that is applicable for active matrix organic light emitting diode displays (AMOLEDs) can be manufactured by using a silicide seed induced lateral crystallization (SILC) method. The amorphous silicon thin film transistor crystallizing method includes the steps of: forming an amorphous silicon layer on a substrate; forming an active region by patterning the amorphous silicon layer; forming a crystallization induced metal layer in both a source region and a drain region that are placed on both side ends of the active region; forming a number of dot-shaped metal silicide seeds on the surfaces of the source region and the drain region made of amorphous silicon by removing the crystallization induced metal layer; and crystallizing the active region formed of the amorphous silicon layer by heat-treating the substrate by using the metal silicide seeds as crystallization seeds.

摘要翻译： 提供了一种使非晶硅薄膜晶体管结晶的方法和使用其制造多晶薄膜晶体管的方法，其中指示可用于有源矩阵有机发光二极管的电平的漏电流特性的多晶薄膜晶体管 可以通过使用硅化物种子诱导横向结晶（SILC）方法来制造显示器（AMOLED）。 非晶硅薄膜晶体管结晶方法包括以下步骤：在基板上形成非晶硅层; 通过图案化所述非晶硅层形成有源区; 在放置在有源区的两侧端的源区和漏区中形成结晶诱导金属层; 通过除去结晶诱导的金属层，在源极区和由非晶硅制成的漏极区域的表面上形成多个点状金属硅化物晶种; 并且通过使用金属硅化物种子作为结晶种子对基底进行热处理，使由非晶硅层形成的活性区域结晶。

公开(公告)号：US20120298518A1

公开(公告)日：2012-11-29

申请号：US13182632

申请日：2011-07-14

申请人： Seung Ki JOO

发明人： Seung Ki JOO

IPC分类号： C25D5/04 ,  C25D5/00

CPC分类号： C25D5/02 ,  C25D5/04 ,  C25D5/10 ,  C25D5/22 ,  C25D17/10 ,  C25D17/12

摘要： Provided is an electroplating apparatus including: a copper electrode plate that is disposed with a gap from an upper surface of an insulating substrate on which seed electrodes are formed; a driving unit that makes the copper electrode plate move along a rectilinear line; a power supply that applies electric current between the copper electrode plate and each of the seed electrodes; and spacers that are provided on the lower surface of the copper electrode plate to thereby make an electrolyte stay by surface tension between the copper electrode plate and the insulating substrate, and that maintains the gap between the copper electrode plate and the insulating substrate so that the electrolyte may move together with the copper electrode plate. Accordingly, a uniform copper film can be formed on the surface of a large substrate.

摘要翻译： 提供一种电镀设备，包括：铜电极板，与形成有种子电极的绝缘基板的上表面间隔设置; 使铜电极板沿直线移动的驱动单元; 在铜电极板和种子电极之间施加电流的电源; 以及设置在铜电极板的下表面上的间隔物，从而通过铜电极板和绝缘基板之间的表面张力使电解液滞留，并且保持铜电极板和绝缘基板之间的间隙，使得 电解质可以与铜电极板一起移动。 因此，可以在大基板的表面上形成均匀的铜膜。

公开(公告)号：US06596573B2

公开(公告)日：2003-07-22

申请号：US09826446

申请日：2001-04-04

申请人： Seok Woon Lee ,  Seung Ki Joo

发明人： Seok Woon Lee ,  Seung Ki Joo

IPC分类号： H01L2184

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L29/41733 ,  H01L29/78645

摘要： A thin film transistor (TFT) including a polycrystalline active layer and a method for making the same are disclosed. An amorphous silicon layer is deposited on a substrate and is crystallized by using MJLC (metal induced lateral crystallization) to provide a poly-silicon active layer of the TFT. Specifically, the amorphous silicon layer is poly-crystallized during a thermal treatment of the active layer. The thermal treatment causes the MILC of the active layer propagating from portions of the source and the drain regions on which MILC source metal is formed through the contact holes of the TFT.

摘要翻译： 公开了一种包括多晶有源层的薄膜晶体管（TFT）及其制造方法。 非晶硅层沉积在衬底上并通过使用MJLC（金属诱导横向结晶）结晶，以提供TFT的多晶硅有源层。 具体地，在有源层的热处理期间，非晶硅层被多晶化。 热处理使得有源层的MILC通过TFT的接触孔从形成有MILC源极金属的源区和漏区的部分传播。

公开(公告)号：US06548331B2

公开(公告)日：2003-04-15

申请号：US09826439

申请日：2001-04-04

申请人： Seok Woon Lee ,  Seung Ki Joo

发明人： Seok Woon Lee ,  Seung Ki Joo

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L27/12 ,  H01L29/78609 ,  H01L29/78621

摘要： A method for fabricating a TFT including a crystalline silicon active layer is disclosed, in which the metal which induced the crystallization of the active layer is offset from a gate electrode utilizing a mask used to form a lightly doped drain (LDD) region or an offset junction region in the active layer. The TFT includes a silicon active layer crystallized by crystallization inducing metal and a gate electrode, and has an LDD region or an offset junction region formed in the vicinity of the channel region. The method for fabricating the TFT forms a metal offset region without using an additional photoresist forming process, and forms a LDD region by conducting a low density doping in the metal offset region. As a result, a transistor made according to the present invention has low leakage current in its off-state, and has stable electrical characteristics in its on-state.

公开(公告)号：US06537890B2

公开(公告)日：2003-03-25

申请号：US09900905

申请日：2001-07-10

申请人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

发明人： Seung Ki Joo ,  Ki Bum Kim ,  Yeo Geon Yoon

IPC分类号： H01L2176

CPC分类号： H01L29/6675 ,  H01L29/78648

摘要： A poly-silicon (poly-Si) thin film transistor (TFT) having a back bias effect is provided in order to enhance characteristics of a leakage current, a sub-threshold slope, and an on-current. The poly-Si TFT includes a glass substrate, an island type buried electrode pad formed of an conductive material on one side of the glass substrate where the back bias voltage is applied, a buffer layer formed of an insulation material on the whole surface of the glass substrate, and a poly-Si TFT formed on the upper portion of the buffer layer. A method of fabricating the TFT is also provided.

公开(公告)号：US20190097264A1

公开(公告)日：2019-03-28

申请号：US16121922

申请日：2018-09-05

申请人： Seung-ki Joo

发明人： Seung-ki Joo

IPC分类号： H01M10/0525 ,  H01M4/62 ,  H01M10/04 ,  H01M4/40 ,  H01M4/32 ,  H01M4/46

CPC分类号： H01M10/0525 ,  H01M4/0416 ,  H01M4/043 ,  H01M4/0471 ,  H01M4/131 ,  H01M4/133 ,  H01M4/134 ,  H01M4/136 ,  H01M4/1391 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/1397 ,  H01M4/32 ,  H01M4/405 ,  H01M4/463 ,  H01M4/485 ,  H01M4/505 ,  H01M4/5825 ,  H01M4/621 ,  H01M4/661 ,  H01M4/808 ,  H01M10/0459 ,  H01M2004/021

摘要： Provided is a method of manufacturing a lithium secondary battery, the method including: preparing positive and negative metal foams having a plurality of first pores; controlling first pore sizes of the metal foams depending on an application; filling the first pores with a slurry obtained by mixing a positive electrode active material or a negative electrode active material, a binder, a conductive material, and an organic solvent; heat-treating the metal foams to form second pores having a size smaller than those of the first pores. The first pore size of the metal foam can be controlled, so that a high capacity and high output battery can be manufactured depending on the usage.

公开(公告)号：US08211738B2

公开(公告)日：2012-07-03

申请号：US12355078

申请日：2009-01-16

申请人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim

发明人： Seung Ki Joo ,  Hyeong Suk Yoo ,  Young Su Kim

IPC分类号： H01L21/00

CPC分类号： H01L31/1872 ,  H01L21/02532 ,  H01L21/02672 ,  H01L31/077 ,  H01L31/182 ,  Y02E10/546 ,  Y02P70/521

摘要： Disclosed herein is a method of forming a light-absorbing layer of a polycrystalline silicon solar cell, including: forming a polycrystalline silicon layer on a back electrode; forming an intrinsic amorphous silicon layer on the polycrystalline silicon layer; and heat-treating the transparent insulating substrate to vertically crystallize the intrinsic amorphous silicon layer using the polycrystalline silicon layer as a seed for crystallization through a metal induced vertical crystallization (MIVC) process to form the intrinsic amorphous silicon layer into a light-absorbing layer made of polycrystalline silicon, and is a method of fabricating a high-efficiency polycrystalline silicon solar cell using the light-absorbing layer.

摘要翻译： 本文公开了形成多晶硅太阳能电池的光吸收层的方法，包括：在背面电极上形成多晶硅层; 在所述多晶硅层上形成本征非晶硅层; 并且通过金属诱导垂直结晶（MIVC）工艺，使用多晶硅层作为结晶晶种，对透明绝缘基板进行热处理，以使本征非晶硅层垂直结晶，从而将本征非晶硅层形成为制成的光吸收层 的多晶硅，并且是使用该光吸收层制造高效多晶硅太阳能电池的方法。

公开(公告)号：US20120097962A1

公开(公告)日：2012-04-26

申请号：US13182620

申请日：2011-07-14

申请人： Seung Ki JOO

发明人： Seung Ki JOO

IPC分类号： H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66765 ,  H01L21/28008 ,  H01L29/4908

摘要： Provided is a polysilicon thin film transistor having a bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed layer that is formed in the same pattern as that of a gate electrode on the transparent insulation substrate, and that is used to form the gate electrode; the gate electrode that is formed of copper on the seed layer; a planarization layer that is formed on the transparent insulation substrate in the same level as that of the gate electrode in the vicinity of the gate electrode; a gate insulation film formed on the upper portion of the gate electrode and the planarization layer, respectively; and a polysilicon layer in which a channel region, a source region and a drain region are formed on the upper portion of the gate insulation film.

摘要翻译： 提供一种具有使用铜的底栅结构的多晶硅薄膜晶体管及其制造方法。 多晶硅薄膜晶体管包括：透明绝缘基板; 种子层，其形成为与透明绝缘基板上的栅电极相同的图案，并用于形成栅电极; 在种子层上由铜形成的栅电极; 在所述透明绝缘基板上形成与所述栅电极附近的所述栅极电平相同的平坦化层; 分别形成在栅电极和平坦化层的上部的栅极绝缘膜; 以及在栅极绝缘膜的上部形成有沟道区域，源极区域和漏极区域的多晶硅层。

公开(公告)号：US07816851B2

公开(公告)日：2010-10-19

申请号：US11479615

申请日：2006-06-30

申请人： Hyeong-Suk Yoo ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-Il Park ,  Sung-Lak Choi

发明人： Hyeong-Suk Yoo ,  Seung-Ki Joo ,  Myong-Hi Rhee ,  In-Sun Hwang ,  Hae-Il Park ,  Sung-Lak Choi

IPC分类号： H01J1/62 ,  H01J63/04

CPC分类号： G02F1/133617 ,  G02F1/133602

摘要： A planar light source device includes a lower substrate, a cathode electrode a carbon nanotube, an upper substrate, a fluorescent layer, and an anode electrode. The cathode electrode is on the lower substrate. The carbon nanotube is electrically connected to the cathode electrode. The upper substrate faces the lower substrate. The fluorescent layer and the anode electrode are formed on the upper substrate. Therefore, the planar light source device generates light without using mercury.

摘要翻译： 平面光源装置包括下基板，阴极电极，碳纳​​米管，上基板，荧光层和阳极电极。 阴极位于下基板上。 碳纳米管与阴极电连接。 上基板面向下基板。 荧光层和阳极电极形成在上基板上。 因此，平面光源装置在不使用汞的情况下产生光。