公开(公告)号：US20150372178A1

公开(公告)日：2015-12-24

申请号：US14610177

申请日：2015-01-30

申请人： SOLAR JUNCTION CORPORATION

发明人： Rebecca Elizabeth Jones-Albertus ,  Pranob Misra ,  Michael J. Sheldon ,  Homan B. Yuen ,  Ting Liu ,  Daniel Derkacs ,  Vijit Sabnis ,  Michael West Wiemer ,  Ferran Suarez

IPC分类号： H01L31/0687 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0693

CPC分类号： H01L31/0687 ,  H01L31/028 ,  H01L31/03048 ,  H01L31/06 ,  H01L31/0693 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1852 ,  H01L31/1856 ,  H01L31/1876 ,  Y02E10/544 ,  Y02P70/521

摘要： Multijunction solar cells having at least four subcells are disclosed, in which at least one of the subcells comprises a base layer formed of an alloy of one or more elements from group III on the periodic table, nitrogen, arsenic, and at least one element selected from the group consisting of Sb and Bi, and each of the subcells is substantially lattice matched. Methods of manufacturing solar cells and photovoltaic systems comprising at least one of the multijunction solar cells are also disclosed.

摘要翻译： 公开了具有至少四个子电池的多结太阳能电池，其中至少一个子电池包括由周期表上的组III中的一种或多种元素的合金形成的基底层，氮，砷和选择的至少一种元素 从Sb和Bi组成的组，并且每个子电池基本上是晶格匹配的。 还公开了包括至少一个多结太阳能电池的太阳能电池和光伏系统的制造方法。

公开(公告)号：US09142615B2

公开(公告)日：2015-09-22

申请号：US14051149

申请日：2013-10-10

申请人： SOLAR JUNCTION CORPORATION

发明人： Onur Fidaner ,  Daniel Derkacs ,  Paul F. Lamarche ,  Michael W. Wiemer

IPC分类号： H01L29/06 ,  H01L21/764 ,  H01L31/0687 ,  G01R31/40

CPC分类号： H01L29/0657 ,  H01L21/764 ,  H01L31/0687 ,  H02S50/00 ,  H02S50/10 ,  Y02E10/544 ,  Y02P70/521

摘要： The present disclosure provides multi-junction solar cell structures and fabrication methods thereof that improve electrical testing capability and reduce chip failure rates. In the present invention a special masking pattern is used in the layout such that all or some of the epitaxial layers are etched away in the corner areas of each solar cell. Consequently, the semiconductor substrate or one or more of the interconnections between junctions become accessible from the top (the side facing the sun) to make electrical connections.

摘要翻译： 本公开提供了提供电测试能力并降低芯片故障率的多结太阳能电池结构及其制造方法。 在本发明中，在布局中使用特殊的掩模图案，使得在每个太阳能电池的拐角区域中蚀刻所有或一些外延层。 因此，半导体衬底或接点之间的一个或多个互连可从顶部（朝向太阳的一侧）接近以进行电连接。

公开(公告)号：US20150214412A1

公开(公告)日：2015-07-30

申请号：US14678737

申请日：2015-04-03

申请人： SOLAR JUNCTION CORPORATION

发明人： Rebecca Elizabeth Jones-Albertus ,  HOMAN BERNARD YUEN ,  TING LIU ,  PRANOB MISRA

IPC分类号： H01L31/0735 ,  C22C28/00 ,  C22C30/00 ,  H01L31/0304 ,  H01L31/0725

CPC分类号： H01L31/03048 ,  C22C28/00 ,  C22C30/00 ,  C30B23/025 ,  C30B23/066 ,  C30B29/40 ,  C30B33/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10T428/12

摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

摘要翻译： 提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 （N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07＆nlE; x＆nlE; 0.18,0.025＆amp; nlE; y＆nlE; 0.04和0.001＆amp; nlE; z＆nlE; 0.03。

公开(公告)号：US20150122318A1

公开(公告)日：2015-05-07

申请号：US14597621

申请日：2015-01-15

申请人： SOLAR JUNCTION CORPORATION

发明人： REBECCA ELIZABETH JONES-ALBERTUS ,  HOMAN BERNARD YUEN ,  TING LIU ,  PRANOB MISRA

IPC分类号： H01L31/0725

CPC分类号： H01L31/03048 ,  C22C28/00 ,  C22C30/00 ,  C30B23/025 ,  C30B23/066 ,  C30B29/40 ,  C30B33/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10T428/12

摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≧x≧0.18, 0.025≧y≧0.04 and 0.001≧z≧0.03.

摘要翻译： 提供了具有至少0.9eV的带隙，即具有低锑（Sb）含量和增强的铟（In）含量和增强氮的Ga1-xInxNyAs1-y-zSbz的太阳能电池的子电池的合金组合物 （N）含量，实现了与GaAs和Ge衬底的实质晶格匹配，并在GaInNASSb子电池中为多结太阳能电池提供高短路电流和高开路电压。 Ga1-xInxNyAs1-y-zSbz的组成范围为0.07≥x≥0.18,0.025≥y≥0.04且0.001≥Z≥0.03。

公开(公告)号：US20150027520A1

公开(公告)日：2015-01-29

申请号：US14512224

申请日：2014-10-10

申请人： SOLAR JUNCTION CORPORATION

发明人： REBECCA ELIZABETH JONES-ALBERTUS ,  HOMAN BERNARD YUEN ,  TING LlU ,  PRANOB MISRA

IPC分类号： H01L31/0735 ,  H01L31/0725 ,  H01L31/0304

CPC分类号： H01L31/03048 ,  C22C28/00 ,  C22C30/00 ,  C30B23/025 ,  C30B23/066 ,  C30B29/40 ,  C30B33/02 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/036 ,  H01L31/0725 ,  H01L31/0735 ,  H01L31/078 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521 ,  Y10T428/12

摘要： An alloy composition for a subcell of a solar cell is provided that has a bandgap of at least 0.9 eV, namely, Ga1-xInxNyAs1-y-zSbz with a low antimony (Sb) content and with enhanced indium (In) content and enhanced nitrogen (N) content, achieving substantial lattice matching to GaAs and Ge substrates and providing both high short circuit currents and high open circuit voltages in GaInNAsSb subcells for multijunction solar cells. The composition ranges for Ga1-xInxNyAs1-y-zSbz are 0.07≦x≦0.18, 0.025≦y≦0.04 and 0.001≦z≦0.03.

公开(公告)号：US20130312817A1

公开(公告)日：2013-11-28

申请号：US13679922

申请日：2012-11-16

申请人： Solar Junction Corporation

发明人： Onur Fidaner ,  Michael West Wiemer ,  Vijit A. Sabnis ,  Ewelina N. Lucow

IPC分类号： H01L31/0352

CPC分类号： H01L31/0352 ,  H01L21/30612 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/03046 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1804 ,  H01L31/184 ,  H01L31/1844 ,  H01L31/1848 ,  H01L31/186 ,  Y02E10/544 ,  Y02P70/521

摘要： A single-step wet etch process is provided to isolate multijunction solar cells on semiconductor substrates, wherein the wet etch chemistry removes semiconductor materials nonselectively without a major difference in etch rate between different heteroepitaxial layers. The solar cells thus formed comprise multiple heterogeneous semiconductor layers epitaxially grown on the semiconductor substrate.

公开(公告)号：US20190288147A1

公开(公告)日：2019-09-19

申请号：US16431521

申请日：2019-06-04

申请人： SOLAR JUNCTION CORPORATION

发明人： PRANOB MISRA ,  REBECCA ELIZABETH JONES-ALBERTUS ,  TING LIU ,  ILYA FUSHMAN ,  HOMAN B. YUEN

IPC分类号： H01L31/0735 ,  H01L31/18 ,  H01L31/0687 ,  H01L31/0304 ,  H01L31/0725 ,  H01L31/065

摘要： Dilute nitride optical absorber materials having graded doping profiles are disclosed. The materials can be used in photodetectors and photovoltaic cells. Dilute nitride subcells having graded doping display improved efficiency, short circuit current density, and open circuit voltage.

公开(公告)号：US20190189826A1

公开(公告)日：2019-06-20

申请号：US16282762

申请日：2019-02-22

申请人： SOLAR JUNCTION CORPORATION

发明人： FERRAN SUAREZ ,  TING LIU ,  HOMAN B. YUEN ,  DAVID TANER BILIR ,  ARSEN SUKIASYAN ,  JORDAN LANG

IPC分类号： H01L31/0725 ,  H01L31/0687 ,  H01L31/0735 ,  H01L31/0304

CPC分类号： H01L31/0725 ,  H01L31/03048 ,  H01L31/0687 ,  H01L31/0735 ,  Y02E10/544

摘要： Multijunction photovoltaic cells having at least three subcells are disclosed, in which at least one of the subcells comprises a base layer formed of GaInNAsSb. The GaInNAsSb subcells exhibit high internal quantum efficiencies over a broad range of irradiance energies.

公开(公告)号：US20190013430A1

公开(公告)日：2019-01-10

申请号：US16132059

申请日：2018-09-14

申请人： Solar Junction Corporation

发明人： Rebecca Elizabeth JONES-ALBERTUS ,  Pranob MISRA ,  Michael J. SHELDON ,  Homan B. YUEN ,  Ting LIU ,  Daniel DERKACS ,  Vijit SABNIS ,  Michael West WIEMER ,  Ferran SUAREZ

IPC分类号： H01L31/0735 ,  H01L31/0687 ,  H01L31/0304 ,  H01L31/0725 ,  H01L31/065 ,  H01L31/18

摘要： Compound semiconductor alloys comprising dilute nitride materials, are materials used in absorbing layers for photodetectors, power converters, solar cells, and in particular to high efficiency, electronic and optoelectronic devices, including multijunction solar cells, photodetectors, power converters, and the like, formed primarily of III-V semiconductor alloys. The absorbing (or active) layers achieve improved characteristics including band gap optimization and minimization of defects.

公开(公告)号：US20190013429A1

公开(公告)日：2019-01-10

申请号：US16018917

申请日：2018-06-26

申请人： SOLAR JUNCTION CORPORATION

发明人： FERRAN SUAREZ ,  TING LIU ,  ARSEN SUKIASYAN ,  IVAN HERNANDEZ ,  JORDAN LANG ,  RADEK ROUCKA ,  SABEUR SIALA ,  AYMERIC MAROS

IPC分类号： H01L31/0687 ,  H01L31/0304 ,  H01L31/20 ,  H01L31/18

摘要： Semiconductor devices and methods of fabricating semiconductor devices having a dilute nitride layer and at least one semiconductor material overlying the dilute nitride layer are disclosed. Hybrid epitaxial growth and the use of aluminum barrier layers to minimize hydrogen diffusion into the dilute nitride layer are used to fabricate high-efficiency multijunction solar cells.