公开(公告)号：US07279777B2

公开(公告)日：2007-10-09

申请号：US10839193

申请日：2004-05-05

Applicant: Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

Inventor： Feng Bai ,  Todd D. Jones ,  Kevin M. Lewandowski ,  Tzu-Chen Lee ,  Dawn V. Muyres ,  Tommie W. Kelley

IPC: H01L23/58

CPC classification number: H01L21/02118 ,  C08L33/14 ,  H01G4/18 ,  H01L21/312 ,  H01L51/0052 ,  H01L51/0516 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H05K1/162 ,  Y10T428/31692

Abstract: Organic polymers for use in laminates including capacitors, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R4.

Abstract translation: 用于包括电容器的层压体的有机聚合物，其中所述聚合物包括下式的重复单元：其中：每个R 1独立地为H，芳基，Cl，Br，I或有机基团，其中 包括可交联基团; 每个R 2独立地为H，芳基或R 4; 每个R 3独立地为H或甲基; 每个R 5独立地是烷基，卤素或R 4; 每个R 4独立地是包含至少一个CN基团并且具有每个CN基团约30至约200的分子量的有机基团; 并且n = 0-3; 条件是聚合物中至少一个重复单元包括R 4。

公开(公告)号：US07193291B2

公开(公告)日：2007-03-20

申请号：US10809135

申请日：2004-03-25

Applicant: Tzu-Chen Lee ,  Michael A. Haase ,  Paul F. Baude

Inventor： Tzu-Chen Lee ,  Michael A. Haase ,  Paul F. Baude

IPC: H01L27/095 ,  H01L29/47

CPC classification number: H01L51/105 ,  H01L51/002 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0579 ,  H01L51/0583

Abstract: An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as a buffer between the semiconductor layer and an ohmic contact layer.

Abstract translation: 有机肖特基二极管包括在层的一侧具有整流接触的多晶有机半导体层。 非晶掺杂半导体层被放置在多晶有机半导体层的另一侧上，并且其作为半导体层和欧姆接触层之间的缓冲区。

公开(公告)号：US20060237717A1

公开(公告)日：2006-10-26

申请号：US11428084

申请日：2006-06-30

Applicant: Feng Bai ,  Todd Jones ,  Kevin Lewandowski ,  Tzu-Chen Lee ,  Dawn Muyres ,  Tommie Kelley

Inventor： Feng Bai ,  Todd Jones ,  Kevin Lewandowski ,  Tzu-Chen Lee ,  Dawn Muyres ,  Tommie Kelley

IPC: H01L51/00 ,  H01L29/08 ,  H01L35/24

CPC classification number: H01L21/02118 ,  H01G4/18 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/312 ,  H01L51/0052 ,  H01L51/052 ,  H01L51/0529 ,  H01L51/0537 ,  H05K1/162 ,  Y10T428/31692

Abstract: Organic polymers for use in electronic devices, wherein the polymer includes repeat units of the formula: wherein: each R1 is independently H, an aryl group, Cl, Br, I, or an organic group that includes a crosslinkable group; each R2 is independently H, an aryl group or R4; each R3 is independently H or methyl; each R5 is independently an alkyl group, a halogen, or R4; each R4 is independently an organic group that includes at least one CN group and has a molecular weight of about 30 to about 200 per CN group; and n=0-3; with the proviso that at least one repeat unit in the polymer includes an R4. These polymers are useful in electronic devices such as organic thin film transistors.

Abstract translation: 用于电子器件的有机聚合物，其中所述聚合物包括下式的重复单元：其中：每个R 1独立地为H，芳基，Cl，Br，I或包括 可交联基团; 每个R 2独立地为H，芳基或R 4; 每个R 3独立地为H或甲基; 每个R 5独立地是烷基，卤素或R 4; 每个R 4独立地是包含至少一个CN基团并且具有每个CN基团约30至约200的分子量的有机基团; 并且n = 0-3; 条件是聚合物中至少一个重复单元包括R 4。 这些聚合物可用于诸如有机薄膜晶体管的电子器件中。

公开(公告)号：US20050212072A1

公开(公告)日：2005-09-29

申请号：US10809135

申请日：2004-03-25

Applicant: Tzu-Chen Lee ,  Michael Haase ,  Paul Baude

Inventor： Tzu-Chen Lee ,  Michael Haase ,  Paul Baude

IPC: H01L51/00 ,  H01L51/05 ,  H01L51/10 ,  H01L51/30 ,  H01L51/40 ,  H01L27/095

CPC classification number: H01L51/105 ,  H01L51/002 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0053 ,  H01L51/0059 ,  H01L51/0078 ,  H01L51/0081 ,  H01L51/0579 ,  H01L51/0583

Abstract: An organic Schottky diode includes a polycrystalline organic semiconductor layer with a rectifying contact on one side of the layer. An amorphous doped semiconductor layer is placed on the other side of the polycrystalline organic semiconductor layer, and it acts as a buffer between the semiconductor layer and an ohmic contact layer.

Abstract translation: 有机肖特基二极管包括在层的一侧具有整流接触的多晶有机半导体层。 非晶掺杂半导体层被放置在多晶有机半导体层的另一侧上，并且作为半导体层和欧姆接触层之间的缓冲区。

公开(公告)号：US5343544A

公开(公告)日：1994-08-30

申请号：US87503

申请日：1993-07-02

Applicant: Gary T. Boyd ,  Tzu-Chen Lee ,  Bruce A. Sventek ,  Elisa M. Cross ,  Laura A. Weller-Brophy

Inventor： Gary T. Boyd ,  Tzu-Chen Lee ,  Bruce A. Sventek ,  Elisa M. Cross ,  Laura A. Weller-Brophy

IPC: B29D11/00 ,  G02B6/122 ,  G02B6/30 ,  G02B6/36

CPC classification number: G02B6/3652 ,  B29D11/0075 ,  G02B6/30 ,  G02B6/3688 ,  G02B6/3692 ,  G02B6/3696

Abstract: An integrated optical coupler comprises a substrate with fiber-aligning grooves and waveguiding channels and a covering with complementary grooves and, optionally, channels. These couplers can be made from reproducible masters and electroplated molds made from those masters.

Abstract translation: 集成光耦合器包括具有光纤对准槽和波导通道的基板以及具有互补槽和可选地通道的覆盖物。 这些耦合器可以由可重复的主器件和由这些主器件制成的电镀模具制成。

公开(公告)号：US20070232781A1

公开(公告)日：2007-10-04

申请号：US11278222

申请日：2006-03-31

Applicant: Peiwang Zhu ,  Tzu-Chen Lee ,  Dennis Vogel ,  Christopher Gerlach

Inventor： Peiwang Zhu ,  Tzu-Chen Lee ,  Dennis Vogel ,  Christopher Gerlach

IPC: C08G75/00

CPC classification number: H01L51/0043 ,  C08G61/126 ,  C08G2261/124 ,  C08G2261/1424 ,  C08G2261/314 ,  C08G2261/3223 ,  H01L51/0037

Abstract: Acene-thiophene copolymers are provided that can be used in electronic devices.

Abstract translation: 提供可用于电子设备的乙烯 - 噻吩共聚物。

公开(公告)号：US06586791B1

公开(公告)日：2003-07-01

申请号：US09619302

申请日：2000-07-19

Applicant: Tzu-Chen Lee ,  Nelson B. O'Bryan

Inventor： Tzu-Chen Lee ,  Nelson B. O'Bryan

IPC: H01L2976

CPC classification number: H01L29/517 ,  H01L21/31691 ,  H01L29/51 ,  H01L51/0052 ,  H01L51/0537 ,  H01L51/0545

Abstract: An insulating layer in a field effect transistor is formed of superfine ceramic particles dispersed in a polymeric matrix. The characteristics of the insulating layer can be changed by varying the mix of ceramic particles and matrix components. Appropriate selection of components can provide a high dielectric constant material which is not subject to pinholes, has a high voltage breakdown and is chemically resistant. The material can be applied at relatively low processing temperatures, using a wide range of coating techniques, and is highly suited for use with polymeric substrates.

Abstract translation: 场效应晶体管中的绝缘层由分散在聚合物基质中的超细陶瓷颗粒形成。 可以通过改变陶瓷颗粒和基质组分的混合来改变绝缘层的特性。 组件的适当选择可以提供不受针孔影响的高介电常数材料，具有高电压击穿并具有耐化学腐蚀性。 该材料可以在相对低的加工温度下使用，使用广泛的涂覆技术，并且非常适合用于聚合物基材。