公开(公告)号：US20070102023A1

公开(公告)日：2007-05-10

申请号：US11594755

申请日：2006-11-09

Applicant: Hun-jung Yi ,  Byung-kwang Byun ,  Gyung-soo Kim ,  Jai-young Woo ,  Dong-won Hwang ,  Seung-ki Chae ,  Yang-koo Lee ,  Sang-hee Kim ,  Young-hwan Park

Inventor： Hun-jung Yi ,  Byung-kwang Byun ,  Gyung-soo Kim ,  Jai-young Woo ,  Dong-won Hwang ,  Seung-ki Chae ,  Yang-koo Lee ,  Sang-hee Kim ,  Young-hwan Park

IPC: B08B7/04 ,  B08B3/00

CPC classification number: B08B3/14 ,  B08B3/04 ,  B08B3/08 ,  H01L21/02041 ,  H01L21/67086

Abstract: An apparatus and method for removing silicate from a phosphoric acid solution, including a treating unit, a regeneration line coupled to the treating unit, an additive solution supply member in communication with the regeneration line to decrease the temperature of the phosphoric acid solution and the concentration of the phosphoric acid therein, a filter in communication with the regeneration line to remove precipitated silicate particles, and a heating member having a heater and a vaporizing chamber to remove the additive.

Abstract translation: 一种从磷酸溶液中除去硅酸盐的装置和方法，包括处理单元，与处理单元相连的再生线，与再生线连通的添加剂溶液供应构件，以降低磷酸溶液的温度和浓度 的磷酸，与再生线连通以除去沉淀的硅酸盐颗粒的过滤器，以及具有加热器和蒸发室以除去添加剂的加热构件。

公开(公告)号：US20060237033A1

公开(公告)日：2006-10-26

申请号：US11380286

申请日：2006-04-26

Applicant: Hun-Jung Yi ,  Yang-Koo Lee ,  Pil-Kwon Jun ,  Sang-Oh Park ,  Jai-Young Woo

Inventor： Hun-Jung Yi ,  Yang-Koo Lee ,  Pil-Kwon Jun ,  Sang-Oh Park ,  Jai-Young Woo

IPC: B08B3/00 ,  C23G1/00

CPC classification number: H01L21/02052 ,  B08B3/04 ,  H01L21/67017 ,  H01L21/67028 ,  H01L21/67126

Abstract: In an embodiment, a cleaning apparatus and method can prevent adsorption of nano-size particles by wafers. The apparatus includes a cleaning chamber for filling with a cleaning solution for cleaning an object and a drying chamber disposed over the cleaning chamber for drying the object by supplying drying fluid from an upper part. It also includes a transferring unit for transferring the object by moving it between the cleaning and drying chambers. Further, it includes a moveable exhaust plate disposed between the drying chamber and the cleaning chamber for dividing the two chambers and for exhausting the drying fluid supplied to the drying chamber. The drying fluid flows in a uniform laminar flow in the drying chamber.

Abstract translation: 在一个实施例中，清洁装置和方法可以防止由晶片吸收纳米尺寸的颗粒。 该装置包括用于填充用于清洁物体的清洁溶液的清洁室和设置在清洁室上方的干燥室，用于通过从上部供应干燥流体来干燥物体。 它还包括用于通过在清洁和干燥室之间移动物体来传送物体的转印单元。 此外，其包括设置在干燥室和清洁室之间的可移动排气板，用于分隔两个室并排出供应到干燥室的干燥流体。 干燥流体在干燥室中以均匀的层流流动。

公开(公告)号：US20060154484A1

公开(公告)日：2006-07-13

申请号：US11330803

申请日：2006-01-11

Applicant: Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

Inventor： Dong-Won Hwang ,  Yang-Koo Lee ,  Dong-Chul Heo ,  Pil-Kwon Jun ,  Kwang-Shin Lim ,  Sang-Eon Lee

IPC: H01L21/302 ,  H01L21/461

CPC classification number: H01L21/31133 ,  H01L21/31053

Abstract: In one embodiment, a method of removing a low-k layer at a low cost and a method of recycling a wafer using the same, is described. A fluoride treatment is performed on the low-k layer formed on an object using an aqueous hydrogen fluoride solution, and the low-k layer is removed from the object. The Si—O bond in the low-k layer is broken due to an aqueous hydrogen fluoride solution, so that the low-k layer is easily removed from the wafer. Accordingly, the wafer may be recycled at a low cost, thereby improving manufacturing productivity of a semiconductor.

Abstract translation: 在一个实施例中，描述了以低成本去除低k层的方法以及使用其降低晶片的方法。 使用氟化氢水溶液对形成在物体上的低k层进行氟化处理，从物体除去低k层。 低k层中的Si-O键由于氟化氢水溶液而破裂，使得低k层容易从晶片上去除。 因此，可以以低成本回收晶片，从而提高半导体的制造生产率。

公开(公告)号：US06274914B1

公开(公告)日：2001-08-14

申请号：US08855024

申请日：1997-05-13

Applicant: Young-hoon Park ,  Yang-koo Lee ,  Kyung-seok Oh

Inventor： Young-hoon Park ,  Yang-koo Lee ,  Kyung-seok Oh

IPC: H01L2980

CPC classification number: H01L27/0928

Abstract: A CMOS integrated circuit includes an NMOS transistor and a PMOS transistor in an integrated circuit substrate. The NMOS transistor and the PMOS transistor each include a gate, and a source/drain on opposing sides of the gate. An insulating layer is located on the integrated circuit substrate. The insulating layer includes a contact hole therein which exposes a portion of a corresponding one of the source/drains. A source/drain plug is formed in the corresponding one of the source/drains. The source/drain plug is of opposite conductivity from the corresponding one of the source/drains. The source/drain plug is centered about the portion of the corresponding one of the source/drains. The source/drain plug may be formed by ion implantation through the contact hole and is thereby self-aligned to the contact hole. The source/drain plug can compensate for misalignment and the diffusion for highly integrated CMOS devices.

Abstract translation: CMOS集成电路在集成电路基板中包括NMOS晶体管和PMOS晶体管。 NMOS晶体管和PMOS晶体管各自包括栅极，栅极的相对侧上的源极/漏极。 绝缘层位于集成电路基板上。 绝缘层包括其中暴露出源极/漏极中的相应一个的一部分的接触孔。 源/排水塞形成在相应的一个源/排水管中。 源极/漏极插塞与源极/漏极中相应的一个相反。 源极/漏极插头以相应的一个源极/漏极的部分为中心。 源极/漏极插塞可以通过接触孔的离子注入形成，从而与接触孔自对准。 源极/漏极插头可以补偿高度集成的CMOS器件的不对准和扩散。

公开(公告)号：US08572957B2

公开(公告)日：2013-11-05

申请号：US12545653

申请日：2009-08-21

Applicant: Toshimichi Ikeda ,  Yang Koo Lee

Inventor： Toshimichi Ikeda ,  Yang Koo Lee

IPC: F15B11/17

CPC classification number: E02F9/2239 ,  E02F9/2282 ,  E02F9/2292 ,  E02F9/2296 ,  F15B11/17 ,  F15B2211/20523 ,  F15B2211/20546 ,  F15B2211/20576 ,  F15B2211/2654 ,  F15B2211/2656 ,  F15B2211/3116 ,  F15B2211/324

Abstract: A hydraulic system for construction equipment is provided, which can increase the driving speed of a corresponding working device by making hydraulic fluid of a hydraulic pump, which is added to the hydraulic system having two hydraulic pumps in the construction equipment, join hydraulic fluid on the working device side, and can intercept the supply of hydraulic fluid from the working device side to a traveling apparatus side when the working device and the traveling apparatus are simultaneously manipulated.

Abstract translation: 提供了一种用于施工设备的液压系统，其可以通过将液压泵的液压油添加到具有在施工设备中的两个液压泵的液压系统中的液压流体连接在液压油上来提高相应工作装置的驱动速度 并且能够在同时操作工作装置和行进装置时截断从工作装置侧向行驶装置侧的液压油的供给。

公开(公告)号：US20110123400A1

公开(公告)日：2011-05-26

申请号：US13017440

申请日：2011-01-31

Applicant: Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

Inventor： Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

IPC: G01N33/20

CPC classification number: G01N21/77 ,  G01N31/22

Abstract: The present invention provides an apparatus for detecting metal concentration from an area including compounding a solution that includes a metal dissolved by a solvent, and a reagent combined with metal ions dissolved in the solution and referring a difference of absorption rates between a compound of the solvent and reagent and a compound of the solution and reagent.

Abstract translation: 本发明提供一种用于从包括由溶剂溶解的金属的溶液混合的区域和与溶解在溶液中的金属离子组合的试剂的区域中检测金属浓度的装置，并且提及溶剂化合物之间的吸收速率差 试剂和溶液和试剂的化合物。

公开(公告)号：US07879736B2

公开(公告)日：2011-02-01

申请号：US11771896

申请日：2007-06-29

Applicant: Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

Inventor： Dong-Won Hwang ,  Kook-Joo Kim ,  Jung-In La ,  Pil-Kwon Jun ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC: H01L21/302 ,  H01L21/461

CPC classification number: C03C15/00 ,  C09K13/08 ,  H01L21/31133 ,  H01L21/76804 ,  H01L21/76897 ,  H01L27/10855

Abstract: In a composition for etching silicon oxide, and a method of forming a contact hole using the composition, the composition which includes from about 0.01 to about 2 percent by weight of ammonium bifluoride, from about 2 to about 35 percent by weight of an organic acid, from about 0.05 to about 1 percent by weight of an inorganic acid, and a remainder of a low polar organic solvent. The composition may reduce damages to a metal silicide pattern that may be exposed in an etching process performed for forming the contact hole.

Abstract translation: 在用于蚀刻氧化硅的组合物和使用该组合物形成接触孔的方法中，组合物包含约0.01至约2重量％的二氟化铵，约2至约35重量％的有机酸 ，约0.05至约1重量％的无机酸，以及剩余的低极性有机溶剂。 组合物可以减少在用于形成接触孔的蚀刻工艺中暴露的金属硅化物图案的损伤。

公开(公告)号：US20100009885A1

公开(公告)日：2010-01-14

申请号：US12564077

申请日：2009-09-22

Applicant: Jung-Dae PARK ,  Pil-Kwon JUN ,  Myoung-Ok HAN ,  Se-Yeon KIM ,  Kwang-Shin LIM ,  Tae-Hyo CHOI ,  Seung-Ki CHAE ,  Yang-Koo LEE

Inventor： Jung-Dae PARK ,  Pil-Kwon JUN ,  Myoung-Ok HAN ,  Se-Yeon KIM ,  Kwang-Shin LIM ,  Tae-Hyo CHOI ,  Seung-Ki CHAE ,  Yang-Koo LEE

IPC: G03F7/42

CPC classification number: C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract translation: 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US07608540B2

公开(公告)日：2009-10-27

申请号：US11406243

申请日：2006-04-19

Applicant: Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

Inventor： Jung-Dae Park ,  Pil-Kwon Jun ,  Myoung-Ok Han ,  Se-Yeon Kim ,  Kwang-Shin Lim ,  Tae-Hyo Choi ,  Seung-Ki Chae ,  Yang-Koo Lee

IPC: H01L29/00 ,  C11D7/26 ,  C11D7/32 ,  C11D7/50

CPC classification number: C11D7/5013 ,  C11D7/263 ,  C11D7/266 ,  C11D7/3263 ,  C11D7/3272 ,  C11D7/3281 ,  C11D7/34 ,  C11D11/0047

Abstract: A composition for removing a photoresist includes about 5 to about 20 percent by weight of an alcoholamide compound, about 15 to about 60 percent by weight of a polar aprotic solvent, about 0.1 to about 6 percent by weight of an additive, and pure water. The alcoholamide compound is chemically structured as follows: where R1 is a hydroxyl group or a hydroxyalkyl group, and R2 is a hydrogen atom or a hydroxyalkyl group.

Abstract translation: 用于除去光致抗蚀剂的组合物包括约5至约20重量％的醇酰胺化合物，约15至约60重量％的极性非质子溶剂，约0.1至约6重量％的添加剂和纯水。 醇酰胺化合物的化学结构如下：其中R1是羟基或羟基烷基，R2是氢原子或羟烷基。

公开(公告)号：US20080194037A1

公开(公告)日：2008-08-14

申请号：US12029612

申请日：2008-02-12

Applicant: Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

Inventor： Hyun-Kee Hong ,  Jae-Seok Lee ,  Yang-Koo Lee ,  Hun-Jung Yi ,  Jung-Dae Park ,  Sun-Hee Park

IPC: G01N33/20 ,  G01N30/96

CPC classification number: G01N21/77 ,  G01N31/22

Abstract: The present invention provides methods for detecting metal concentration from an area including compounding a solution that includes a metal dissolved by a solvent, and a reagent combined with metal ions dissolved in the solution and referring a difference of absorption rates between a compound of the solvent and reagent and a compound of the solution and reagent. An apparatus for carrying out the processes described herein are also provided.

Abstract translation: 本发明提供了从包括将溶剂溶解的金属溶液混合的区域和与溶解在溶液中的金属离子组合的试剂的区域检测金属浓度的方法，并且提及溶剂的化合物和 试剂和溶液和试剂的化合物。 还提供了用于执行本文所述的处理的装置。