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    Image sensor with improved black level calibration
    21.
    发明授权
    Image sensor with improved black level calibration 有权
    具有改进的黑色电平校准的图像传感器

    公开(公告)号：US08314869B2

    公开(公告)日：2012-11-20

    申请号：US13495880

    申请日：2012-06-13

    Applicant: Wei Zheng ,  Hsin-Chih Tai ,  Yin Qian ,  Hongjun Li ,  Howard E. Rhodes

    Inventor： Wei Zheng ,  Hsin-Chih Tai ,  Yin Qian ,  Hongjun Li ,  Howard E. Rhodes

    IPC: H04N3/14 ,  H04N5/225

    CPC classification number: H04N5/361 ,  H01L27/1461 ,  H01L27/14634 ,  H01L27/1464 ,  H04N5/3745

    Abstract: An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal for calibrating the image data. Light transmitting layers are disposed on a first side of a pixel array die including the imaging system and cover at least the imaging pixel array and the black reference pixel. A light shielding layer is disposed on the first side of the pixel array die and covers a portion of the light transmitting layers and the black reference pixel without covering the imaging pixel array.

    Abstract translation: 能够进行黑电平校准的成像系统包括成像像素阵列，至少一个黑色参考像素和外围电路。 成像像素阵列包括多个有源像素，每个有源像素被耦合以捕获图像数据。 黑参考像素被耦合以产生用于校准图像数据的黑参考信号。 光透射层设置在包括成像系统的像素阵列管芯的第一侧，并且至少覆盖成像像素阵列和黑色参考像素。 遮光层设置在像素阵列管芯的第一侧上，并且覆盖透光层和黑色参考像素的一部分而不覆盖成像像素阵列。

    IMAGE SENSOR WITH IMPROVED BLACK LEVEL CALIBRATION
    23.
    发明申请
    IMAGE SENSOR WITH IMPROVED BLACK LEVEL CALIBRATION 有权
    具有改进黑色等级校准的图像传感器

    公开(公告)号：US20120249845A1

    公开(公告)日：2012-10-04

    申请号：US13495880

    申请日：2012-06-13

    Applicant: Wei Zheng ,  Hsin-Chih Tai ,  Yin Qian ,  Hongjun Li ,  Howard E. Rhodes

    Inventor： Wei Zheng ,  Hsin-Chih Tai ,  Yin Qian ,  Hongjun Li ,  Howard E. Rhodes

    IPC: H04N5/361 ,  H04N9/64

    CPC classification number: H04N5/361 ,  H01L27/1461 ,  H01L27/14634 ,  H01L27/1464 ,  H04N5/3745

    Abstract: An imaging system capable of black level calibration includes an imaging pixel array, at least one black reference pixel, and peripheral circuitry. The imaging pixel array includes a plurality of active pixels each coupled to capture image data. The black reference pixel is coupled to generate a black reference signal for calibrating the image data. Light transmitting layers are disposed on a first side of a pixel array die including the imaging system and cover at least the imaging pixel array and the black reference pixel. A light shielding layer is disposed on the first side of the pixel array die and covers a portion of the light transmitting layers and the black reference pixel without covering the imaging pixel array.

    Abstract translation: 能够进行黑电平校准的成像系统包括成像像素阵列，至少一个黑色参考像素和外围电路。 成像像素阵列包括多个有源像素，每个有源像素被耦合以捕获图像数据。 黑参考像素被耦合以产生用于校准图像数据的黑参考信号。 光透射层设置在包括成像系统的像素阵列管芯的第一侧，并且至少覆盖成像像素阵列和黑色参考像素。 遮光层设置在像素阵列管芯的第一侧上，并且覆盖透光层和黑色参考像素的一部分而不覆盖成像像素阵列。

    Impeller enclosure
    25.
    发明授权
    Impeller enclosure 失效
    叶轮机壳

    公开(公告)号：US07937783B2

    公开(公告)日：2011-05-10

    申请号：US11451674

    申请日：2006-06-13

    Applicant: Yin Qian ,  Norman R. Fugate

    Inventor： Yin Qian ,  Norman R. Fugate

    IPC: A47K3/022

    CPC classification number: A61H35/006 ,  A61H33/0091

    Abstract: A pedicure spa including a fluid retaining basin. An impeller operatively coupled to the basin. An enclosure removably coupled to the basin, the enclosure including an upper region and a lower region, and defining a plurality of orifices in the upper region and the lower region, with the enclosure configured to enclose the impeller and direct fluid flow towards a foot region of the basin defined between a wall of the basin and the lower region of the enclosure.

    Abstract translation: 修脚水疗中心包括流体保留盆。 可操作地连接到盆的叶轮。 外壳，其可移除地联接到所述盆，所述外壳包括上部区域和下部区域，并且在所述上部区域和所述下部区域中限定多个孔口，所述外壳构造成包围所述叶轮并将流体流动朝向脚部区域 在盆的壁和外壳的下部区域之间限定的盆地。

    IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS
    26.
    发明申请
    IMAGE SENSOR WITH MULTIPLE THICKNESS ANTI-RELFECTIVE COATING LAYERS 审中-公开
    具有多个厚度抗反射涂层的图像传感器

    公开(公告)号：US20090302409A1

    公开(公告)日：2009-12-10

    申请号：US12133299

    申请日：2008-06-04

    Applicant: Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    Inventor： Yin Qian ,  Hsin-Chih Tai ,  Duli Mao ,  Vincent Venezia ,  Hidetoshi Nozaki ,  Howard E. Rhodes

    IPC: H01L31/00 ,  H01L21/00

    CPC classification number: H01L27/1463 ,  H01L27/1462 ,  H01L27/14621 ,  H01L27/14629 ,  H01L27/14645

    Abstract: An image sensor includes a substrate having a surface at which incident light is received. A pixel array is formed over and within the substrate. The pixel array includes a first and a second pixel arranged to receive light of different colors. The first pixel includes a photosensitive region formed in the substrate and has a first anti-reflective coating (ARC) layer formed over the photosensitive region. The first ARC layer has a first thickness that produces destructive interference above the first ARC layer in response to the incident light. The second pixel includes a photosensitive region formed in the substrate, and a second ARC layer formed over the photosensitive region that produces destructive interference above the second ARC layer in response to the incident light.

    Abstract translation: 图像传感器包括具有接收入射光的表面的基板。 在衬底之上和之内形成像素阵列。 像素阵列包括布置成接收不同颜色的光的第一和第二像素。 第一像素包括形成在基板中并且在光敏区域上形成的第一抗反射涂层（ARC）层的感光区域。 第一ARC层具有响应于入射光而在第一ARC层上方产生破坏性干扰的第一厚度。 第二像素包括形成在基板中的感光区域和形成在光敏区域上的响应于入射光而在第二ARC层上方产生相消干涉的第二ARC层。

    BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT ATTENUATING LAYER
    27.
    发明申请
    BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT ATTENUATING LAYER 审中-公开
    背光照明成像传感器与光衰减层

    公开(公告)号：US20090200631A1

    公开(公告)日：2009-08-13

    申请号：US12028733

    申请日：2008-02-08

    Applicant: Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

    Inventor： Hsin-Chih Tai ,  Howard E. Rhodes ,  Duli Mao ,  Vincent Venezia ,  Yin Qian

    IPC: H01L31/0216

    CPC classification number: H01L27/1462 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1464

    Abstract: A backside illuminated imaging sensor includes a semiconductor substrate, a metal interconnect layer and a light attenuating layer. The semiconductor substrate has a front surface, a back surface, and includes at least one imaging pixel formed on the front surface of the semiconductor substrate. The metal interconnect layer is electrically coupled to the imaging pixel and the light attenuating layer is coupled between the metal interconnect layer and the front surface of the semiconductor substrate. In operation, the imaging pixel receives light from the back surface of the semiconductor substrate, where a portion of the received light propagates through the imaging pixel to the light attenuating layer. The light attenuating layer is configured to substantially attenuate the portion of light received from the imaging pixel.

    Abstract translation: 背面照明成像传感器包括半导体衬底，金属互连层和光衰减层。 半导体衬底具有前表面，后表面，并且包括形成在半导体衬底的前表面上的至少一个成像像素。 金属互连层电耦合到成像像素，并且光衰减层耦合在金属互连层和半导体衬底的前表面之间。 在操作中，成像像素从半导体衬底的背表面接收光，其中一部分接收的光通过成像像素传播到光衰减层。 光衰减层被配置为基本上衰减从成像像素接收的光的部分。

    BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT REFLECTING TRANSFER GATE
    29.
    发明申请
    BACKSIDE ILLUMINATED IMAGING SENSOR WITH LIGHT REFLECTING TRANSFER GATE 有权
    背光照明传感器与光反射转移门

    公开(公告)号：US20090200588A1

    公开(公告)日：2009-08-13

    申请号：US12199737

    申请日：2008-08-27

    Applicant: Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

    Inventor： Sohei Manabe ,  Hsin-Chih Tai ,  Vincent Venezia ,  Duli Mao ,  Yin Qian

    IPC: H01L31/112

    CPC classification number: H01L27/14603 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14683

    Abstract: A backside illuminated imaging sensor includes a semiconductor having an imaging pixel that can include a photodiode region, an insulation layer, and a reflective layer. The photodiode is typically formed in the frontside of the semiconductor substrate. A surface shield layer can be formed on the frontside of the photodiode region. A light reflecting layer can be formed using silicided polysilicon on the frontside of the sensor. The photodiode region receives light from the back surface of the semiconductor substrate. When a portion of the received light propagates through the photodiode region to the light reflecting layer, the light reflecting layer reflects the portion of light received from the photodiode region towards the photodiode region. The silicided polysilicon light reflecting layer also forms a gate of a transistor for establishing a conductive channel between the photodiode region and a floating drain.

    Abstract translation: 背面照明成像传感器包括具有可以包括光电二极管区域，绝缘层和反射层的成像像素的半导体。 光电二极管通常形成在半导体衬底的前侧。 表面屏蔽层可以形成在光电二极管区域的前侧。 可以使用传感器前侧的硅化多晶硅形成光反射层。 光电二极管区域从半导体衬底的后表面接收光。 当接收的光的一部分通过光电二极管区域传播到光反射层时，光反射层将从光电二极管区域接收的光的一部分朝向光电二极管区域反射。 硅化多晶硅光反射层还形成晶体管的栅极，用于在光电二极管区域和浮置漏极之间建立导电沟道。

    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS
    30.
    发明申请
    LATERAL LIGHT SHIELD IN BACKSIDE ILLUMINATED IMAGING SENSORS 有权
    背光照明成像传感器中的侧光

    公开(公告)号：US20130207212A1

    公开(公告)日：2013-08-15

    申请号：US13370085

    申请日：2012-02-09

    Applicant: Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    Inventor： Duli Mao ,  Hsin-Chih Tai ,  Vincent Venezia ,  Yin Qian ,  Gang Chen ,  Howard E. Rhodes

    IPC: H01L31/0216 ,  H01L31/18

    CPC classification number: H01L27/1462 ,  H01L27/14623 ,  H01L27/1464 ,  H01L27/14685

    Abstract: A backside illuminated image sensor includes a semiconductor layer and a trench disposed in the semiconductor layer. The semiconductor layer has a frontside surface and a backside surface. The semiconductor layer includes a light sensing element of a pixel array disposed in a sensor array region of the semiconductor layer. The pixel array is positioned to receive external incoming light through the backside surface of the semiconductor layer. The semiconductor layer also includes a light emitting element disposed in a periphery circuit region of the semiconductor layer external to the sensor array region. The trench is disposed in the semiconductor layer between the light sensing element and the light emitting element. The trench is positioned to impede a light path between the light emitting element and the light sensing element when the light path is internal to the semiconductor layer.

    Abstract translation: 背面照明图像传感器包括设置在半导体层中的半导体层和沟槽。 半导体层具有前表面和背面。 半导体层包括设置在半导体层的传感器阵列区域中的像素阵列的光感测元件。 像素阵列被定位成接收穿过半导体层的背面的外部入射光。 半导体层还包括设置在传感器阵列区域外侧的半导体层的外围电路区域中的发光元件。 沟槽设置在光感测元件和发光元件之间的半导体层中。 当光路在半导体层内部时，沟槽定位成阻碍发光元件和光感测元件之间的光路。

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