公开(公告)号：US08314036B2

公开(公告)日：2012-11-20

申请号：US12794890

申请日：2010-06-07

Applicant: Seongho Moon ,  Yool Kang ,  HyoungHee Kim ,  Seokhwan Oh ,  So-Ra Han ,  Seongwoon Choi

Inventor： Seongho Moon ,  Yool Kang ,  HyoungHee Kim ,  Seokhwan Oh ,  So-Ra Han ,  Seongwoon Choi

IPC: H01L21/302

CPC classification number: H01L21/32139 ,  G03F7/40 ,  H01L21/0273 ,  H01L21/0338 ,  H01L21/31144

Abstract: A method of forming fine patterns of a semiconductor device is provided. The method includes forming plural preliminary first mask patterns, which are spaced apart from each other by a first distance in a direction parallel to a surface of a substrate, on the substrate; forming an acid solution layer on the substrate to cover the plural preliminary first mask patterns; forming plural first mask patterns which are spaced apart from each other by a second distance larger than the first distance, of which upper and side portions are surrounded by acid diffusion regions having first solubility; exposing the first acid diffusion regions by removing the acid solution layer; forming a second mask layer having second solubility lower than the first solubility in spaces between the acid diffusion regions; and forming plural second mask patterns located between the plural first mask patterns, respectively, by removing the acid diffusion regions by the dissolvent.

Abstract translation: 提供了形成半导体器件的精细图案的方法。 该方法包括在基板上形成在平行于基板的表面的方向上彼此间隔开第一距离的多个初步第一掩模图案; 在所述基板上形成酸溶液层以覆盖所述多个初步第一掩模图案; 形成彼此间隔开大于第一距离的第二距离的多个第一掩模图案，其中上侧部分和第二部分被具有第一溶解度的酸性扩散区域包围; 通过除去酸溶液层暴露第一酸扩散区; 在所述酸扩散区之间形成第二掩模层，所述第二掩模层的第二溶解度低于所述第一溶解度; 以及分别通过所述溶剂除去所述酸扩散区而形成位于所述多个第一掩模图案之间的多个第二掩模图案。

公开(公告)号：US20110275020A1

公开(公告)日：2011-11-10

申请号：US13099910

申请日：2011-05-03

Applicant: Subramanya Mayya ,  Takahiro Yasue ,  Seok-hwan Oh ,  Yool Kang

Inventor： Subramanya Mayya ,  Takahiro Yasue ,  Seok-hwan Oh ,  Yool Kang

IPC: G03F7/20 ,  G03F7/32

CPC classification number: G03F7/40 ,  G03F7/322

Abstract: Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.

Abstract translation: 形成光致抗蚀剂图案的方法可以包括在基板上形成光致抗蚀剂层，使用曝光掩模曝光光致抗蚀剂层，通过显影曝光的光致抗蚀剂层和使用包括涂层的处理剂处理初步图案的表面来形成初步图案 聚合物。

公开(公告)号：US20110244689A1

公开(公告)日：2011-10-06

申请号：US13076856

申请日：2011-03-31

Applicant: So-ra Han ,  Yool Kang ,  Seong-ho Moon ,  Kyung-hwan Yoon ,  Hyoung-hee Kim ,  Seong-woon Choi ,  Seok-hwan Oh

Inventor： So-ra Han ,  Yool Kang ,  Seong-ho Moon ,  Kyung-hwan Yoon ,  Hyoung-hee Kim ,  Seong-woon Choi ,  Seok-hwan Oh

IPC: H01L21/311

CPC classification number: H01L21/0273 ,  G03F7/40 ,  H01L21/3086 ,  H01L21/76229

Abstract: A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern.

Abstract translation: 一种制造半导体器件的方法包括：通过使用包括具有可被酸去保护的保护基的聚合物的材料在基板上形成第一掩模图案，所述第一掩模图案具有多个孔; 在所述第一掩模图案的暴露表面上形成覆盖层，所述封盖层包括酸源; 将酸源扩散到第一掩模图案中，使得保护基团在第一掩模图案中从聚合物变得不可保护; 在所述覆盖层上形成第二掩模层，所述第二掩模层与所述第一掩模图案分离并填充所述第一掩模图案中的所述多个孔; 以及通过去除所述封盖层和所述第一掩模图案，在所述多个孔中形成多个第二掩模图案。

公开(公告)号：US20100093172A1

公开(公告)日：2010-04-15

申请号：US12432357

申请日：2009-04-29

Applicant: Hyoung-hee KIM ,  Yool KANG ,  Seong-woon CHOI ,  Jin-young YOON

Inventor： Hyoung-hee KIM ,  Yool KANG ,  Seong-woon CHOI ,  Jin-young YOON

IPC: H01L21/308 ,  H01L21/312

CPC classification number: H01L21/0273 ,  Y10S430/106 ,  Y10S430/114

Abstract: A method of forming fine patterns of a semiconductor device includes forming a plurality of first mask patterns on a substrate such that the plurality of first mask patterns are separated from one another by a space located therebetween, in a direction parallel to a main surface of the substrate, forming a plurality of capping films formed of a first material having a first solubility in a solvent on sidewalls and a top surface of the plurality of first mask patterns. The method further includes forming a second mask layer formed of a second material having a second solubility in the solvent, which is less than the first solubility, so as to fill the space located between the plurality of first mask patterns, and forming a plurality of second mask patterns corresponding to residual portions of the second mask layer which remain in the space located between the plurality of first mask patterns, after removing the plurality of capping films and a portion of the second mask layer using the solvent.

Abstract translation: 一种形成半导体器件的精细图案的方法包括在衬底上形成多个第一掩模图案，使得多个第一掩模图案在平行于所述第一掩模图案的主表面的方向上彼此分开位于其间的空间 形成多个由第一材料形成的封盖膜，该第一材料在溶剂中具有第一溶解性，并且在多个第一掩模图案的侧壁和顶表面上形成。 该方法还包括形成由溶剂中第二溶解度小于第一溶解度的第二材料形成的第二掩模层，以填充位于多个第一掩模图案之间的空间，并形成多个 第二掩模图案对应于残留在位于多个第一掩模图案之间的空间中的第二掩模层的残留部分，在使用溶剂除去多个封盖膜和第二掩模层的一部分之后。

公开(公告)号：US20070287299A1

公开(公告)日：2007-12-13

申请号：US11711781

申请日：2007-02-28

Applicant: Doo-youl Lee ,  Suk-joo Lee ,  Yool Kang ,  Han-ku Cho ,  Chang-jin Kang ,  Jae-ok Yoo ,  Sung-chan Park

Inventor： Doo-youl Lee ,  Suk-joo Lee ,  Yool Kang ,  Han-ku Cho ,  Chang-jin Kang ,  Jae-ok Yoo ,  Sung-chan Park

IPC: H01L21/266

CPC classification number: H01L21/0337

Abstract: A method of forming a semiconductor device includes forming a first mask pattern on a target layer, the first mask pattern exposing a first portion of the target layer, forming an intermediate material layer, including depositing an intermediate material layer film on a side of the first mask pattern and the first portion of the target layer, and thinning the intermediate material layer film to form the intermediate material layer, forming a second mask pattern that exposes a second portion of the intermediate material layer, removing the exposed second portion of the intermediate material layer to expose the target layer, and patterning the target layer using the first and second mask patterns as patterning masks.

Abstract translation: 形成半导体器件的方法包括：在目标层上形成第一掩模图案，第一掩模图案暴露目标层的第一部分，形成中间材料层，包括在第一掩模图案的一侧上沉积中间材料层膜 掩模图案和目标层的第一部分，并且使中间材料层膜变薄以形成中间材料层，形成暴露中间材料层的第二部分的第二掩模图案，去除中间材料的暴露的第二部分 层以露出目标层，以及使用第一和第二掩模图案作为图案掩模来图案化目标层。

公开(公告)号：US20060127816A1

公开(公告)日：2006-06-15

申请号：US11296816

申请日：2005-12-07

Applicant: Yool Kang ,  Han-ku Cho ,  Sang-Gyun Woo ,  Suk-Joo Lee ,  Man-Hyung Ryoo ,  Mitsuhiro Hata ,  Hyung-Rae Lee

Inventor： Yool Kang ,  Han-ku Cho ,  Sang-Gyun Woo ,  Suk-Joo Lee ,  Man-Hyung Ryoo ,  Mitsuhiro Hata ,  Hyung-Rae Lee

IPC: G03F7/00

CPC classification number: G03F7/0035 ,  G03F7/40 ,  H01L21/0273

Abstract: The present invention provides a double photolithography method in which, after a first photoresist pattern including a crosslinkable agent is formed on a semiconductor substrate, a crosslinkage is formed in a molecular structure of the first photoresist pattern. A second photoresist film may be formed on a surface of the semiconductor substrate on which the crosslinked first photoresist patterns are formed. Second photoresist patterns may be formed by exposing, post-exposure baking, and developing the second photoresist film.

Abstract translation: 本发明提供一种双光刻方法，其中在半导体衬底上形成包括可交联剂的第一光致抗蚀剂图案之后，在第一光致抗蚀剂图案的分子结构中形成交联。 可以在其上形成有交联的第一光致抗蚀剂图案的半导体衬底的表面上形成第二光致抗蚀剂膜。 可以通过曝光，曝光后烘烤和显影第二光致抗蚀剂膜来形成第二光致抗蚀剂图案。

公开(公告)号：US06300036B1

公开(公告)日：2001-10-09

申请号：US09203669

申请日：1998-12-01

Applicant: Sang-Jun Choi ,  Yool Kang ,  Dong-Won Jung ,  Chun-Geun Park

Inventor： Sang-Jun Choi ,  Yool Kang ,  Dong-Won Jung ,  Chun-Geun Park

IPC: B03F7004

CPC classification number: C08F220/18 ,  C08F222/06 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/111 ,  Y10S430/115

Abstract: The compounds are of a class of photosensitive polymers for use in chemically amplified photoresists. These photoresists produce sharp line patterns when exposed with an ArF excimer laser. The polymer composition includes a copolymer and the photoresist composition includes a terpolymer with a photo acid generator. The resulting chemically amplified photoresist compositions have strong resistance to dry etching, possess excellent adhesion to film material, and are capable of being developed using conventional developers.

Abstract translation: 这些化合物是用于化学放大光致抗蚀剂的一类光敏聚合物。 当用ArF准分子激光器曝光时，这些光致抗蚀剂产生尖锐的线条图案。 聚合物组合物包括共聚物，光致抗蚀剂组合物包括具有光酸产生剂的三元共聚物。 所得到的化学放大光致抗蚀剂组合物对干蚀刻具有很强的抗性，对薄膜材料具有优异的粘附性，并且能够使用常规显影剂进行显影。

公开(公告)号：US06284438B1

公开(公告)日：2001-09-04

申请号：US09420555

申请日：1999-10-19

Applicant: Sang-jun Choi ,  Yool Kang ,  Si-hyeung Lee ,  Joo-tae Moon

Inventor： Sang-jun Choi ,  Yool Kang ,  Si-hyeung Lee ,  Joo-tae Moon

IPC: G03F726

CPC classification number: G03F7/40 ,  G03F7/0045 ,  G03F7/039

Abstract: A method for manufacturing a photoresist pattern that defines an opening having a small size, and a method for manufacturing a semiconductor device using the same are provided. A photoresist pattern defining the opening can be formed using a photoresist composition that includes either polymer mixture I containing a polymer A in which an acid-labile di-alkyl malonate group is pendant to the polymer backbone, and a polymer B in which a group that thermally decomposes at a temperature lower than the glass transition temperature of the polymer B itself is pendant to the polymer backbone, or polymer mixture II containing the polymer B and a polymer C including a (meth)acrylate as a monomer, as a main component. The size of the opening then can be reduced by thermal flowing the photoresist pattern. It is possible to form the photoresist pattern defining an opening having a small size since the photoresist composition comprises the polymer mixture which has advantageous characteristics, such as high contrast, and in which the flow rate of the composition upon thermal flowing can easily be controlled.

Abstract translation: 提供了限定具有小尺寸的开口的光致抗蚀剂图案的制造方法以及使用其的半导体装置的制造方法。 可以使用光致抗蚀剂组合物形成限定开口的光致抗蚀剂图案，该光致抗蚀剂组合物包括含有聚合物A的聚合物混合物I，其中酸不稳定的二烷基丙二酸酯基团悬挂于聚合物主链，聚合物B， 在低于聚合物B本身的玻璃化转变温度的温度下热分解为聚合物主链，或含有聚合物B的聚合物混合物II和包含（甲基）丙烯酸酯作为单体的聚合物C作为主要成分。 然后可以通过光致抗蚀剂图案的热流动来减小开口的尺寸。 可以形成限定具有小尺寸的开口的光致抗蚀剂图案，因为光致抗蚀剂组合物包含聚合物混合物，其具有诸如高对比度的有利特征，并且其中组合物在热流动时的流速可以容易地被控制。

公开(公告)号：US08536347B2

公开(公告)日：2013-09-17

申请号：US12285047

申请日：2008-09-29

Applicant: Yool Kang ,  Hak-won Kim ,  Weoun-ju Kim ,  Seong-woon Choi ,  Hyun-woo Kim ,  Hai-sub Na ,  Kyoung-taek Kim

Inventor： Yool Kang ,  Hak-won Kim ,  Weoun-ju Kim ,  Seong-woon Choi ,  Hyun-woo Kim ,  Hai-sub Na ,  Kyoung-taek Kim

IPC: C07D339/00 ,  C07D335/00

CPC classification number: G03F7/0045 ,  C07C309/65 ,  C07C381/12 ,  C07D327/06 ,  C07D333/46 ,  C07D335/02 ,  C07D339/08 ,  G03F7/0392

Abstract: A photoacid generator represented by Formula 1 or Formula 2: wherein R1, R2, and R3 are each independently a C1-C10 alkyl group, X is a C3-C20 alicyclic hydrocarbon group forming a ring with S+, and at least one CH2 group in the alicyclic hydrocarbon group may be replaced with at least one selected from the group consisting of S, O, NH, a carbonyl group, and R5—S+A−, where R5 is a C1-C10 alkyl group, and A− is a counter-ion.

公开(公告)号：US20130040448A1

公开(公告)日：2013-02-14

申请号：US13570812

申请日：2012-08-09

Applicant: Joo-Hyung Yang ,  Yool Kang ,  Hyung-Rae Lee ,  Kyu-Sik Shin ,  Jae-ho Kim ,  Dong-Jun Lee

Inventor： Joo-Hyung Yang ,  Yool Kang ,  Hyung-Rae Lee ,  Kyu-Sik Shin ,  Jae-ho Kim ,  Dong-Jun Lee

IPC: H01L21/312 ,  H01L21/336

CPC classification number: H01L21/28123 ,  H01L21/0273 ,  H01L21/32139 ,  H01L21/76838

Abstract: In a method of forming a metal or metal nitride pattern, a metal or metal nitride layer is formed on a substrate, and a photoresist pattern is formed on the metal or metal nitride layer. An over-coating composition is coated on the metal or metal nitride layer and on the photoresist pattern to form a capping layer on the photoresist pattern. The over-coating composition includes a polymer having amine groups as a side chain or a branch and a solvent. A remaining portion of the over-coating composition is removed by washing with a hydrophilic solution. The metal or metal nitride layer is partially removed using the capping layer and the photoresist pattern as an etching mask.

Abstract translation: 在形成金属或金属氮化物图形的方法中，在基板上形成金属或金属氮化物层，并且在金属或金属氮化物层上形成光刻胶图案。 在金属或金属氮化物层和光致抗蚀剂图案上涂覆过涂层组合物以在光致抗蚀剂图案上形成覆盖层。 该覆盖组合物包括具有侧基或分支和溶剂的胺基的聚合物。 通过用亲水溶液洗涤除去剩余部分的外涂层组合物。 使用覆盖层和光致抗蚀剂图案作为蚀刻掩模来部分去除金属或金属氮化物层。