公开(公告)号：US20140273524A1

公开(公告)日：2014-09-18

申请号：US14204490

申请日：2014-03-11

申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Ning Li ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Ning Li ,  Martin A. Hilkene ,  Matthew D. Scotney-Castle

IPC分类号： H01L21/02

CPC分类号： H01L21/02321 ,  H01L21/0214 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/31155

摘要： Provided are methods for the deposition and doping of films comprising Si. Certain methods involve depositing a SiN, SiO, SiON, SiC or SiCN film and doping the Si-containing film with one or more of C, B, O, N and Ge by a plasma implantation process. Such doped Si-containing films may have improved properties such as reduced etch rate in acid-based clean solutions, reduced dielectric constant and/or improved dielectric strength.

摘要翻译： 提供了用于沉积和掺杂包含Si的膜的方法。 某些方法包括沉积SiN，SiO，SiON，SiC或SiCN膜，并通过等离子体注入工艺将C，B，O，N和Ge中的一种或多种掺杂到含Si薄膜。 这种掺杂的含Si薄膜可具有改进的性能，例如在酸基清洁溶液中降低的蚀刻速率，降低的介电常数和/或改善的介电强度。

公开(公告)号：US20130005146A1

公开(公告)日：2013-01-03

申请号：US13612159

申请日：2012-09-12

申请人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Son Nguyen ,  Li-Qun Xia

发明人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, JR. ,  Son Nguyen ,  Li-Qun Xia

IPC分类号： H01L21/285

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

摘要翻译： 本公开提供了一种符合下面的衬底（即互连结构）的多层盖（即迁移屏障）。 可以位于互连结构的至少一个互连级别上方的多层盖包括从底部到顶部包括氮化硅的第一层和包含氮化硼和碳氮化硼中的至少一种的第二层。

公开(公告)号：US20120196452A1

公开(公告)日：2012-08-02

申请号：US13365229

申请日：2012-02-02

申请人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Michael S. Cox ,  Li-Qun Xia ,  Mei-Yee Shek ,  Jia Lee ,  Vladimir Zubkov ,  Tzu-Fang Huang ,  Rongping Wang ,  Isabelita Roflox ,  Hichem M'Saad

IPC分类号： H01L21/318

CPC分类号： C23C16/345 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/3141 ,  H01L21/3185 ,  H01L21/823412 ,  H01L21/82345 ,  H01L21/823807 ,  H01L21/823835

摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.

摘要翻译： 沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。 在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。 沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。 可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。 在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线 辐射。

公开(公告)号：US08084105B2

公开(公告)日：2011-12-27

申请号：US11765257

申请日：2007-06-19

申请人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

发明人： Jeong-Uk Huh ,  Mihaela Balseanu ,  Li-Qun Xia ,  Victor T. Nguyen ,  Derek R. Witty ,  Hichem M'Saad

IPC分类号： H05H1/24

CPC分类号： C23C16/342 ,  C23C16/45523

摘要： Methods for forming boron-containing films are provided. The methods include introducing a boron-containing precursor and a nitrogen or oxygen-containing precursor into a chamber and forming a boron nitride or boron oxide film on a substrate in the chamber. In one aspect, the method includes depositing a boron-containing film and then exposing the boron-containing film to the nitrogen-containing or oxygen-containing precursor to incorporate nitrogen or oxygen into the film. The deposition of the boron-containing film and exposure of the film to the precursor may be performed for multiple cycles to obtain a desired thickness of the film. In another aspect, the method includes reacting the boron-containing precursor and the nitrogen-containing or oxygen-containing precursor to chemically vapor deposit the boron nitride or boron oxide film.

摘要翻译： 提供了形成含硼膜的方法。 所述方法包括将含硼前体和含氮或含氧前体引入室中，并在室中的基底上形成氮化硼或氧化硼膜。 一方面，该方法包括沉积含硼膜，然后将含硼膜暴露于含氮或含氧前体以将氮或氧引入膜中。 含硼膜的沉积和膜暴露于前体可以进行多个循环以获得所需的膜厚度。 另一方面，该方法包括使含硼前体和含氮或含氧前体反应以化学气相沉积氮化硼或氧化硼膜。

公开(公告)号：US07601651B2

公开(公告)日：2009-10-13

申请号：US11668911

申请日：2007-01-30

申请人： Mihaela Balseanu ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

发明人： Mihaela Balseanu ,  Meiyee Shek ,  Li-Qun Xia ,  Hichem M'Saad

IPC分类号： H01L21/31

CPC分类号： H01L21/76834 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31612 ,  H01L21/31633 ,  H01L21/76829 ,  H01L21/76831

摘要： A method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided. The method includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained. The plasma may be generated from an oxygen-containing gas.

摘要翻译： 提供了一种在室中的衬底上形成层的方法，其中衬底在其表面上具有至少一个形成的特征。 该方法包括在存在等离子体的情况下将衬底暴露于含硅前体以沉积一层，用等离子体处理沉积层，并重复曝光和处理，直到获得所需层厚。 等离子体可以由含氧气体产生。

公开(公告)号：US20080020591A1

公开(公告)日：2008-01-24

申请号：US11762590

申请日：2007-06-13

申请人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

发明人： Mihaela Balseanu ,  Victor Nguyen ,  Li-Qun Xia ,  Derek Witty ,  Hichem M'Saad ,  Mei-Yee Shek ,  Isabelita Roflox

IPC分类号： H01L21/31

CPC分类号： H01L21/3105 ,  C23C16/345 ,  C23C16/56 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/3185 ,  H01L21/823807 ,  H01L29/66583 ,  H01L29/7843

摘要： Stress of a silicon nitride layer may be enhanced by deposition at higher temperatures. Employing an apparatus that allows heating of a substrate to substantially greater than 400° C. (for example a heater made from ceramic rather than aluminum), the silicon nitride film as-deposited may exhibit enhanced stress allowing for improved performance of the underlying MOS transistor device. In accordance with alternative embodiments, a deposited silicon nitride film is exposed to curing with ultraviolet (UV) radiation at an elevated temperature, thereby helping remove hydrogen from the film and increasing film stress. In accordance with still other embodiments, a silicon nitride film is formed utilizing an integrated process employing a number of deposition/curing cycles to preserve integrity of the film at the sharp corner of the underlying raised feature. Adhesion between successive layers may be promoted by inclusion of a post-UV cure plasma treatment in each cycle.

摘要翻译： 氮化硅层的应力可以通过在较高温度下沉积来增强。 使用允许将衬底加热到​​基本上大于400℃的装置（例如由陶瓷而不是铝制成的加热器），沉积的氮化硅膜可能表现出增强的应力，从而可以改善下面的MOS晶体管的性能 设备。 根据替代实施例，沉积的氮化硅膜在升高的温度下暴露于紫外线（UV）辐射固化，从而有助于从膜中除去氢并增加膜应力。 根据其他实施例，使用采用多个沉积/固化周期的整合方法形成氮化硅膜，以保持薄膜在底层凸起特征的尖角处的完整性。 可以通过在每个循环中包括UV后固化等离子体处理来促进连续层之间的粘附。

公开(公告)号：US20060093756A1

公开(公告)日：2006-05-04

申请号：US10981430

申请日：2004-11-03

申请人： Nagarajan Rajagopalan ,  Li-Qun Xia ,  Mihaela Balseanu ,  Thomas Nowak ,  Ranjana Shah ,  Huiwen Xu ,  Chad Peterson ,  Derek Witty ,  Hichem M'Saad

发明人： Nagarajan Rajagopalan ,  Li-Qun Xia ,  Mihaela Balseanu ,  Thomas Nowak ,  Ranjana Shah ,  Huiwen Xu ,  Chad Peterson ,  Derek Witty ,  Hichem M'Saad

IPC分类号： B05D1/36

CPC分类号： C23C16/4405 ,  C23C16/4404 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02301 ,  H01L21/3121 ,  H01L21/31633

摘要： A method for seasoning a deposition chamber wherein the chamber components and walls are densely coated with a material that does not contain carbon prior to deposition of an organo-silicon material on a substrate. An optional carbon-containing layer may be deposited therebetween. A chamber cleaning method using low energy plasma and low pressure to remove residue from internal chamber surfaces is provided and may be combined with the seasoning process.

摘要翻译： 一种用于调节沉积室的方法，其中在将有机硅材料沉积在基底上之前，室部件和壁被不含碳的材料致密地涂覆。 可以在其间沉积任选的含碳层。 提供了使用低能量等离子体和低压以从内部室表面除去残余物的室清洁方法，并且可以与调味过程组合。

公开(公告)号：US20140273529A1

公开(公告)日：2014-09-18

申请号：US14211024

申请日：2014-03-14

申请人： Victor Nguyen ,  Woong Jae Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

发明人： Victor Nguyen ,  Woong Jae Lee ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R. Witty

IPC分类号： H01L21/02

CPC分类号： H01L21/0217 ,  C23C16/045 ,  C23C16/345 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/02348

摘要： Provided are methods of for deposition of SiN films via PEALD processes. Certain methods pertain to exposing a substrate surface to a silicon precursor to provide a silicon precursor at the substrate surface; purging excess silicon precursor; exposing the substrate surface to an ionized reducing agent; and purging excess ionized reducing agent to provide a film comprising SiN, wherein the substrate has a temperature of 23° C. to about 550° C.

摘要翻译： 提供了通过PEALD工艺沉积SiN膜的方法。 某些方法涉及将衬底表面暴露于硅前体以在衬底表面提供硅前体; 清除多余的硅前体; 将基板表面暴露于电离还原剂; 并且吹扫过量的电离还原剂以提供包含SiN的膜，其中所述基材的温度为23℃至约550℃。

公开(公告)号：US08598020B2

公开(公告)日：2013-12-03

申请号：US12824095

申请日：2010-06-25

申请人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R Witty

发明人： Victor Nguyen ,  Mihaela Balseanu ,  Li-Qun Xia ,  Derek R Witty

IPC分类号： H01L21/20

CPC分类号： H01L21/02381 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/045

摘要： In a method of depositing a crystalline germanium layer on a substrate, a substrate is placed in the process zone comprising a pair of process electrodes. In a deposition stage, a crystalline germanium layer is deposited on the substrate by introducing a deposition gas comprising a germanium-containing gas into the process zone, and forming a capacitively coupled plasma of the deposition gas by coupling energy to the process electrodes. In a subsequent treatment stage, the deposited crystalline germanium layer is treated by exposing the crystalline germanium layer to an energized treatment gas or by annealing the layer.

摘要翻译： 在将晶体锗层沉积在衬底上的方法中，将衬底放置在包含一对工艺电极的工艺区中。 在沉积阶段，通过将包含含锗气体的沉积气体引入工艺区域中，将结晶锗层沉积在衬底上，以及通过将能量耦合到工艺电极而形成沉积气体的电容耦合等离子体。 在随后的处理阶段中，通过将结晶锗层暴露于通电处理气体或通过退火该层来处理沉积的结晶锗层。

公开(公告)号：US08492880B2

公开(公告)日：2013-07-23

申请号：US13078305

申请日：2011-04-01

申请人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

发明人： Mihaela Balseanu ,  Stephan A. Cohen ,  Alfred Grill ,  Thomas J. Haigh, Jr. ,  Son V. Nguyen ,  Li-Qun Xia

IPC分类号： H01L23/58 ,  H01L21/469

CPC分类号： B82Y40/00 ,  B82Y30/00 ,  H01L21/02112 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02274 ,  H01L21/76832 ,  H01L21/76834 ,  H01L21/76843 ,  H01L23/53252 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present disclosure provides a multilayered cap (i.e., migration barrier) that conforms to the substrate (i.e., interconnect structure) below. The multilayered cap, which can be located atop at least one interconnect level of an interconnect structure, includes, from bottom to top, a first layer comprising silicon nitride and a second layer comprising at least one of boron nitride and carbon boron nitride.

摘要翻译： 本公开提供了一种符合下面的衬底（即互连结构）的多层盖（即迁移屏障）。 可以位于互连结构的至少一个互连级别上方的多层盖包括从底部到顶部包括氮化硅的第一层和包含氮化硼和碳氮化硼中的至少一种的第二层。