公开(公告)号：US09122403B2

公开(公告)日：2015-09-01

申请号：US13897944

申请日：2013-05-20

Applicant: Apple Inc.

Inventor： Eyal Gurgi ,  Micha Anholt ,  Yoav Kasorla

IPC: G06F12/00 ,  G06F3/06 ,  G11C16/34 ,  G06F12/02 ,  G11C16/10

CPC classification number: G11C16/3427 ,  G06F3/0614 ,  G06F3/0653 ,  G06F3/0673 ,  G06F12/0238 ,  G06F12/0246 ,  G06F2212/1044 ,  G06F2212/7203 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3431

Abstract: A method in a memory that includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration, includes identifying multiple groups of potentially-interfering memory cells that potentially cause interference to a group of target memory cells. Partial distortion components, which are inflicted by the respective groups of the potentially-interfering memory cells on the target memory cells, are estimated. The partial distortion components are progressively accumulated so as to produce an estimated composite distortion affecting the target memory cells, while retaining only the composite distortion and not the partial distortion components. The target memory cells are read, and the interference in the target memory cells is canceled based on the estimated composite distortion.

Abstract translation: 包括以三维（3-D）配置排列的多个模拟存储器单元的存储器中的方法包括识别潜在地对一组目标存储器单元造成干扰的潜在干扰存储器单元的多个组。 估计由目标存储器单元上的潜在干扰存储器单元的相应组造成的部分失真分量。 逐渐积累部分失真分量，以产生影响目标存储器单元的估计复合失真，同时仅保留复合失真而不保留部分失真分量。 读取目标存储器单元，并且基于估计的复合失真来消除目标存储器单元中的干扰。

公开(公告)号：US20150100847A1

公开(公告)日：2015-04-09

申请号：US14048492

申请日：2013-10-08

Applicant: Apple Inc.

Inventor： Shai Ojalvo ,  Eyal Gurgi ,  Yoav Kasorla

IPC: G06F11/10

CPC classification number: G06F3/0619 ,  G06F3/064 ,  G06F3/0659 ,  G06F3/0683 ,  G06F11/008 ,  G06F11/1012 ,  G06F11/1044 ,  G06F11/1068 ,  G06F11/1076 ,  G11C29/52

Abstract: A method includes storing data encoded with an Error Correction Code (ECC) in analog memory cells, by buffering the data in a volatile buffer and then writing the buffered data to the analog memory cells while overwriting at least some of the data in the volatile buffer with success indications. Upon detecting a failure in writing the buffered data to the analog memory cells, recovered data is produced by reading both the volatile buffer and the analog memory cells, assigning reliability metrics to respective bits of the recovered data depending on whether the bits were read from the volatile buffer or from the analog memory cells, and applying ECC decoding to the recovered data using the reliability metrics. The recovered data is re-programmed.

公开(公告)号：US20140355347A1

公开(公告)日：2014-12-04

申请号：US14249448

申请日：2014-04-10

Applicant: Apple Inc.

Inventor： Yael Shur ,  Yoav Kasorla ,  Moshe Neerman ,  Naftali Sommer ,  Avraham Poza Meir ,  Etai Zaltsman ,  Eyal Gurgi ,  Meir Dalal

IPC: G11C16/16

CPC classification number: G11C16/14 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/349

Abstract: A method in a non-volatile memory, which includes multiple memory cells that store data using a predefined set of programming levels including an erased level, includes receiving a storage operation indicating a group of the memory cells that are to be retained without programming for a long time period. The memory cells in the group are set to a retention programming level that is different from the erased level. Upon preparing to program the group of memory cells with data, the group of memory cells is erased to the erased level and the data is then programmed in the group of memory cells.

Abstract translation: 一种非易失性存储器中的方法，其包括使用包括擦除级别的预定义编程级别集存储数据的多个存储器单元，包括接收指示要保留的一组存储器单元的存储操作，而不进行编程 长时间 组中的存储单元设置为与擦除级别不同的保留编程级别。 在准备使用数据对存储器单元组进行编程时，存储器单元组被擦除到擦除的电平，然后将数据编程在存储器单元组中。

公开(公告)号：US20140344524A1

公开(公告)日：2014-11-20

申请号：US14451687

申请日：2014-08-05

Applicant: Apple Inc.

Inventor： Ofir Shalvi ,  Naftali Sommer ,  Yoav Kasorla

IPC: G06F12/08 ,  G06F11/10

CPC classification number: G06F12/0802 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0665 ,  G06F3/0688 ,  G06F11/10 ,  G06F11/1008 ,  G06F12/02 ,  G06F12/0223 ,  G06F12/023 ,  G06F12/0246 ,  G06F2212/7205 ,  Y02D10/13

Abstract: A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead.

公开(公告)号：US20140344519A1

公开(公告)日：2014-11-20

申请号：US13897944

申请日：2013-05-20

Applicant: Apple, Inc.

Inventor： Eyal Gurgi ,  Micha Anholt ,  Yoav Kasorla

IPC: G06F3/06 ,  G06F12/08

CPC classification number: G11C16/3427 ,  G06F3/0614 ,  G06F3/0653 ,  G06F3/0673 ,  G06F12/0238 ,  G06F12/0246 ,  G06F2212/1044 ,  G06F2212/7203 ,  G11C11/5671 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/3418 ,  G11C16/3431

Abstract: A method in a memory that includes multiple analog memory cells arranged in a three-dimensional (3-D) configuration, includes identifying multiple groups of potentially-interfering memory cells that potentially cause interference to a group of target memory cells. Partial distortion components, which are inflicted by the respective groups of the potentially-interfering memory cells on the target memory cells, are estimated. The partial distortion components are progressively accumulated so as to produce an estimated composite distortion affecting the target memory cells, while retaining only the composite distortion and not the partial distortion components. The target memory cells are read, and the interference in the target memory cells is canceled based on the estimated composite distortion.

Abstract translation: 包括以三维（3-D）配置排列的多个模拟存储器单元的存储器中的方法包括识别潜在地对一组目标存储器单元造成干扰的潜在干扰存储器单元的多个组。 估计由目标存储器单元上的潜在干扰存储器单元的相应组造成的部分失真分量。 逐渐积累部分失真分量，以产生影响目标存储器单元的估计复合失真，同时仅保留复合失真而不保留部分失真分量。 读取目标存储器单元，并且基于估计的复合失真来消除目标存储器单元中的干扰。

公开(公告)号：US20140328131A1

公开(公告)日：2014-11-06

申请号：US14332650

申请日：2014-07-16

Applicant: Apple Inc.

Inventor： Yael Shur ,  Yoav Kasorla ,  Eyal Gurgi

IPC: G11C7/00

CPC classification number: G11C7/00 ,  G11C13/0002 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32 ,  G11C27/005

Abstract: A method includes selecting a word line for programming in an array of analog memory cells that are arranged in rows associated with respective word lines and columns associated with respective bit lines. Word-line voltages, which program the memory cells in the selected word line, are applied to the respective word lines. Bit-line voltages, which cause one or more additional memory cells outside the selected word line to be programmed as a result of programming the selected word line, are applied to the respective bit lines. Using the applied word-line and bit-line voltages, data is stored in the memory cells in the selected word line and the additional memory cells are simultaneously programmed.

Abstract translation: 一种方法包括选择用于在与相应字线相关联的行中排列的模拟存储器单元阵列中编程的字线，所述行与相应位线相关联。 对所选字线中的存储单元进行编程的字线电压被施加到相应的字线。 将所选择的字线外部的一个或多个附加存储单元作为所选字线编程的结果编程的位线电压被施加到相应的位线。 使用所应用的字线和位线电压，将数据存储在所选字线中的存储单元中，并且附加存储单元被同时编程。

公开(公告)号：US08832531B2

公开(公告)日：2014-09-09

申请号：US14150212

申请日：2014-01-08

Applicant: Apple Inc.

Inventor： Ofir Shalvi ,  Naftali Sommer ,  Yoav Kasorla

IPC: G11C29/00 ,  G06F3/06 ,  G06F12/02 ,  G06F11/10

CPC classification number: G06F12/0802 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0665 ,  G06F3/0688 ,  G06F11/10 ,  G06F11/1008 ,  G06F12/02 ,  G06F12/0223 ,  G06F12/023 ,  G06F12/0246 ,  G06F2212/7205 ,  Y02D10/13

Abstract: A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead.

公开(公告)号：US20140160866A1

公开(公告)日：2014-06-12

申请号：US13709303

申请日：2012-12-10

Applicant: APPLE INC.

Inventor： Yael Shur ,  Yoav Kasorla ,  Eyal Gurgi

IPC: G11C7/00

CPC classification number: G11C27/00 ,  G11C7/00 ,  G11C13/0002 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32 ,  G11C27/005

Abstract: A method includes, in an array of analog memory cells that are arranged in rows associated with respective word lines, reading a first group of the memory cells in a selected word line, including one or more memory cells that store a status of at least one word line in the array other than the selected word line. A readout configuration for a second group of the memory cells is set responsively to the read status. The second group of the memory cells is read using the readout configuration.

Abstract translation: 一种方法包括在与各个字线相关联的行中排列的模拟存储器单元的阵列中，读取选定字线中的第一组存储器单元，包括存储至少一个状态的一个或多个存储器单元 数组中除字线以外的所选字线。 响应于读取状态设置第二组存储器单元的读出配置。 使用读出配置读取第二组存储单元。

公开(公告)号：US20140160865A1

公开(公告)日：2014-06-12

申请号：US13709267

申请日：2012-12-10

Applicant: APPLE INC.

Inventor： Yael Shur ,  Yoav Kasorla ,  Eyal Gurgi

IPC: G11C7/00

CPC classification number: G11C7/00 ,  G11C13/0002 ,  G11C13/004 ,  G11C13/0061 ,  G11C13/0069 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32 ,  G11C27/005

Abstract: A method includes selecting a word line for programming in an array of analog memory cells that are arranged in rows associated with respective word lines and columns associated with respective bit lines. Word-line voltages, which program the memory cells in the selected word line, are applied to the respective word lines. Bit-line voltages, which cause one or more additional memory cells outside the selected word line to be programmed as a result of programming the selected word line, are applied to the respective bit lines. Using the applied word-line and bit-line voltages, data is stored in the memory cells in the selected word line and the additional memory cells are simultaneously programmed.

公开(公告)号：US20130268824A1

公开(公告)日：2013-10-10

申请号：US13908018

申请日：2013-06-03

Applicant: Apple Inc.

Inventor： Ofir Shalvi ,  Naftali Sommer ,  Yoav Kasorla

IPC: G06F12/02 ,  G06F11/10

CPC classification number: G06F12/0802 ,  G06F3/061 ,  G06F3/0619 ,  G06F3/0665 ,  G06F3/0688 ,  G06F11/10 ,  G06F11/1008 ,  G06F12/02 ,  G06F12/0223 ,  G06F12/023 ,  G06F12/0246 ,  G06F2212/7205 ,  Y02D10/13

Abstract: A method for data storage includes, in a memory that includes multiple memory blocks, specifying at a first time a first over-provisioning overhead, and storing data in the memory while retaining in the memory blocks memory areas, which do not hold valid data and whose aggregated size is at least commensurate with the specified first over-provisioning overhead. Portions of the data from one or more previously-programmed memory blocks containing one or more of the retained memory areas are compacted. At a second time subsequent to the first time, a second over-provisioning overhead, different from the first over-provisioning overhead, is specified, and data storage and data portion compaction is continued while complying with the second over-provisioning overhead.

Abstract translation: 一种用于数据存储的方法包括在包括多个存储器块的存储器中，在第一时间指定第一过度供应开销，并且将数据存储在存储器中，同时保留存储器块，其不保存有效数据， 其聚合大小至少与指定的第一超额配置开销相称。 包含一个或多个保留的存储区域的一个或多个预先编程的存储块的数据的部分被压缩。 在第一次之后的第二时间，指定与第一过度供应开销不同的第二过度供应开销，并且在遵循第二过度供应开销的同时继续数据存储和数据部分压缩。