公开(公告)号：US20180138032A1

公开(公告)日：2018-05-17

申请号：US15871264

申请日：2018-01-15

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/02 ,  H01L21/67 ,  H01L21/306 ,  B08B5/00

CPC classification number: H01L21/02065 ,  B08B5/00 ,  H01L21/02381 ,  H01L21/0243 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/30621 ,  H01L21/67023

Abstract: Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

公开(公告)号：US20180082874A1

公开(公告)日：2018-03-22

申请号：US15267232

申请日：2016-09-16

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN ,  Hua CHUNG ,  Schubert S. CHU

IPC: H01L21/673

CPC classification number: H01L21/67 ,  H01L21/673 ,  H01L21/67393 ,  H01L21/677

Abstract: Embodiments disclosed herein generally relate to apparatus and methods for controlling substrate outgassing such that hazardous gasses are eliminated from a surface of a substrate after a Si:As process has been performed on a substrate, and prior to additional processing. The apparatus includes a purge station including an enclosure, a gas supply coupled to the enclosure, an exhaust pump coupled to the enclosure, a first purge gas port formed in the enclosure, a first channel operatively connected to the gas supply at a first end and to the first purge gas port at a second end, a second purge gas port formed in the enclosure, and a second channel operatively connected to the second purge gas port at a third end and to the exhaust pump at a fourth end. The first channel includes a particle filter, a heater, and a flow controller. The second channel includes a dry scrubber.

公开(公告)号：US20180019121A1

公开(公告)日：2018-01-18

申请号：US15631185

申请日：2017-06-23

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN ,  Zhiyuan YE ,  Errol Antonio C. SANCHEZ ,  David K. CARLSON

IPC: H01L21/02 ,  H01L29/24 ,  H01L29/78

CPC classification number: H01L21/02521 ,  H01L21/02381 ,  H01L21/0262 ,  H01L29/24 ,  H01L29/7848

Abstract: The present disclosure generally relate to methods for forming an epitaxial layer on a semiconductor device, including a method of forming a tensile-stressed silicon antimony layer. The method includes heating a substrate disposed within a processing chamber, wherein the substrate comprises silicon, and exposing a surface of the substrate to a gas mixture comprising a silicon-containing precursor and an antimony-containing precursor to form a silicon antimony alloy having an antimony concentration of 5×1020 to 5×1021 atoms per cubic centimeter or greater on the surface.

公开(公告)号：US20170229303A1

公开(公告)日：2017-08-10

申请号：US15496420

申请日：2017-04-25

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO

IPC: H01L21/02 ,  B08B7/04 ,  B08B7/00

CPC classification number: H01L21/02661 ,  B08B5/00 ,  B08B7/0035 ,  B08B7/0071 ,  B08B7/04 ,  H01L21/02046 ,  H01L21/0206 ,  H01L21/0245 ,  H01L21/02455 ,  H01L21/02538 ,  H01L21/67115

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a multiple-stage native oxide cleaning process. In one example, the method for removing native oxides from a substrate includes supplying a first gas mixture including an inert gas onto a surface of a material layer disposed on a substrate into a first processing chamber, wherein the material layer is a III-V group containing layer for a first period of time, supplying a second gas mixture including an inert gas and a hydrogen containing gas onto the surface of the material layer for a second period of time, and supplying a third gas mixture including a hydrogen containing gas to the surface of the material layer while maintaining the substrate at a temperature less than 550 degrees Celsius.

公开(公告)号：US20170133224A1

公开(公告)日：2017-05-11

申请号：US15277394

申请日：2016-09-27

Applicant: Applied Materials, Inc.

Inventor： Xinyu BAO ,  Chun YAN

IPC: H01L21/02 ,  H01L29/66 ,  H01L29/786 ,  H01L29/06 ,  H01L29/423

CPC classification number: H01L29/66742 ,  H01L21/02057 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/8252 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66522 ,  H01L29/78681 ,  H01L29/78696

Abstract: Embodiments described herein generally relate to methods and structures for forming precise fins comprising Group III-V elements on a silicon substrate. A buffer layer is deposited in a trench formed in the dielectric material on a substrate. An isolation layer is then deposited over the buffer layer. A portion of the isolation layer is removed allowing for a precisely sized Group III-V channel layer to be deposited on the isolation layer.

公开(公告)号：US20160035562A1

公开(公告)日：2016-02-04

申请号：US14445410

申请日：2014-07-29

Applicant: Applied Materials, Inc.

Inventor： Chun YAN ,  Xinyu BAO ,  Melitta Manyin HON

IPC: H01L21/02 ,  H01L29/161 ,  H01L21/311 ,  H01L29/16

CPC classification number: H01L21/02046 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02658

Abstract: A method for cleaning a substrate, such as a silicon substrate, a silicon-germanium substrate, or other silicon-containing substrate is disclosed. The method includes exposing the substrate to a first plasma configured to attack a sub-oxide on the substrate. The method also includes exposing the substrate to a second plasma configured to attack the native oxide on the substrate. The method further includes exposing the substrate to a gas containing at least one of molecular chlorine or a chlorine compound. The gas may be configured to remove at least some of the remaining native oxide and sub-oxide. After the cleaning process, the substrate may be further processed. Further processing steps may include, for example, an epitaxial growth process. An epitaxial growth process performed on a substrate cleaned according to the methods disclosed herein will exhibit few defects.

Abstract translation: 公开了一种用于清洁诸如硅衬底，硅锗衬底或其它含硅衬底的衬底的方法。 该方法包括将衬底暴露于构造成攻击衬底上的次氧化物的第一等离子体。 该方法还包括将衬底暴露于配置成攻击衬底上的自然氧化物的第二等离子体。 该方法还包括将基底暴露于含有分子氯或氯化合物中的至少一种的气体。 气体可以被配置为去除至少一些剩余的天然氧化物和亚氧化物。 在清洁处理之后，可以进一步处理基板。 另外的处理步骤可以包括例如外延生长工艺。 在根据本文公开的方法清洁的基底上进行的外延生长工艺将显示出很少的缺陷。