中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

51 records (took 0.027 seconds)

    ICP source for M and W-shape discharge profile control
    21.
    发明授权
    ICP source for M and W-shape discharge profile control 有权

    公开(公告)号：US10283329B2

    公开(公告)日：2019-05-07

    申请号：US15646072

    申请日：2017-07-10

    Applicant: Applied Materials, Inc.

    Inventor： Anurag Kumar Mishra ,  James Rogers ,  John Poulose

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065

    Abstract: Apparatuses and methods are provided that, in some embodiments use an adjustable middle coil to tune plasma density in a plasma processing system. For example, in one embodiment, a plasma processing apparatus includes an impedance match circuit coupled to an Rf power source. The impedance match circuit measures voltage and current at an inner and an outer coil. The match circuit calculates plasma density from the measured voltage and/or current. An adjustable middle coil located between the inner and outer coils is adjusted and/or replaced to tune the plasma density radial profile.

    Automatic electrostatic chuck bias compensation during plasma processing
    23.
    发明授权
    Automatic electrostatic chuck bias compensation during plasma processing 有权

    公开(公告)号：US11948780B2

    公开(公告)日：2024-04-02

    申请号：US17319013

    申请日：2021-05-12

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers ,  Leonid Dorf

    IPC: H01J37/32 ,  H01L21/683

    CPC classification number: H01J37/32715 ,  H01J37/32146 ,  H01J37/32568 ,  H01L21/6831 ,  H01J2237/2007 ,  H01J2237/3341

    Abstract: Embodiments of the present disclosure relate to a system for pulsed direct-current (DC) biasing and clamping a substrate. In one embodiment, the system includes a plasma chamber having an electrostatic chuck (ESC) for supporting a substrate. An electrode is embedded in the ESC and is electrically coupled to a biasing and clamping network. The biasing and clamping network includes at least a shaped DC pulse voltage source and a clamping network. The clamping network includes a DC source and a diode, and a resistor. The shaped DC pulse voltage source and the clamping network are connected in parallel. The biasing and clamping network automatically maintains a substantially constant clamping voltage, which is a voltage drop across the electrode and the substrate when the substrate is biased with pulsed DC voltage, leading to improved clamping of the substrate.

    Temperature and bias control of edge ring
    24.
    发明授权
    Temperature and bias control of edge ring 有权

    公开(公告)号：US11810768B2

    公开(公告)日：2023-11-07

    申请号：US17351977

    申请日：2021-06-18

    Applicant: Applied Materials, Inc.

    Inventor： James Rogers ,  Linying Cui ,  Rajinder Dhindsa

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/683 ,  H01L21/687 ,  H01L21/3065

    CPC classification number: H01J37/32642 ,  H01J37/32724 ,  H01L21/3065 ,  H01L21/67069 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68721 ,  H01J2237/2001

    Abstract: Embodiments described herein provide methods and apparatus used to control a processing result profile proximate to a circumferential edge of a substrate during the plasma-assisted processing thereof. In one embodiment, a substrate support assembly features a first base plate and a second base plate circumscribing the first base plate. The first and second base plates each have one or more respective first and second cooling disposed therein. The substrate support assembly further features a substrate support disposed on and thermally coupled to the first base plate, and a biasing ring disposed on and thermally coupled to the second base plate. Here, the substrate support and the biasing ring are each formed of a dielectric material. The substrate support assembly further includes an edge ring biasing electrode embedded in the dielectric material of the biasing ring and an edge ring disposed on the biasing ring.

    Dual-level pulse tuning
    25.
    发明授权
    Dual-level pulse tuning 有权

    公开(公告)号：US11177115B2

    公开(公告)日：2021-11-16

    申请号：US16429883

    申请日：2019-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Gary Leray ,  Valentin N. Todorow ,  James Rogers

    IPC: H01J37/32 ,  H01L21/67 ,  H01L21/3065 ,  H01L21/3213

    Abstract: Embodiments for the present application include methods and apparatus for operating a plasma enhanced substrate processing system using dual level pulsed radio frequency (RF) power. More specifically, embodiments of the present disclosure allow for frequency and power tuning in a process chamber using dual level pulsed power by using a tuning controller coupled to a matching network and/or a RF power generator. In one embodiment, a tuning system includes a tuning controller disposed in a tuning system, the tuning controller configured to tune dual level RF pulsing data from a RF power generator, wherein the tuning system is connectable to a plasma processing chamber, and a memory connecting to the tuning controller, wherein the tuning controller is configured to couple to a RF power generator and a matching network disposed in the plasma processing chamber.

    Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device
    27.
    发明授权
    Controlling the RF amplitude of an edge ring of a capacitively coupled plasma process device 有权

    公开(公告)号：US10685862B2

    公开(公告)日：2020-06-16

    申请号：US15394070

    申请日：2016-12-29

    Applicant: Applied Materials, Inc.

    Inventor： James Rogers

    IPC: H01L21/683 ,  H01L21/67 ,  H01J37/32 ,  H01L21/687

    Abstract: The present disclosure generally relates to apparatuses and methods that control RF amplitude of an edge ring. The apparatuses and methods include an electrode that is coupled to ground through a variable capacitor. The electrode may be ring-shaped and embedded in a substrate support including an electrostatic chuck. The electrode may be positioned beneath the perimeter of a substrate and/or the edge ring. As the plasma sheath drops adjacent the edge ring due to edge ring erosion, the capacitance of the variable capacitor is adjusted in order to affect the RF amplitude near the edge of the substrate. Adjustment of the RF amplitude via the electrode and variable capacitor results in adjustment of the plasma sheath near the substrate perimeter.

    Apparatus and methods for controlling ion energy distribution
    29.
    发明授权
    Apparatus and methods for controlling ion energy distribution 有权

    公开(公告)号：US11901157B2

    公开(公告)日：2024-02-13

    申请号：US17159133

    申请日：2021-01-26

    Applicant: Applied Materials, Inc.

    Inventor： Linying Cui ,  James Rogers

    IPC: H01J37/32 ,  C23C16/52 ,  C23C16/503 ,  H01L21/67

    CPC classification number: H01J37/32027 ,  H01J37/3299 ,  C23C16/503 ,  C23C16/52 ,  H01L21/67069

    Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for controlling an ion energy distribution during plasma processing. In an embodiment, the apparatus includes a substrate support that has a body having a substrate electrode for applying a substrate voltage to a substrate, and an edge ring electrode embedded for applying an edge ring voltage to an edge ring. The apparatus further includes a substrate voltage control circuit coupled to the substrate electrode, and an edge ring voltage control circuit coupled to the edge ring electrode. The substrate electrode, edge ring electrode, or both are coupled to a power module configured to actively control an energy distribution function width of ions reaching the substrate, edge ring, or both. Methods for controlling an energy distribution function width of ions during substrate processing are also described.

Patent Agency Ranking