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    Coating for chamber particle reduction
    22.
    发明授权
    Coating for chamber particle reduction 有权

    公开(公告)号：US11251024B2

    公开(公告)日：2022-02-15

    申请号：US16933926

    申请日：2020-07-20

    Applicant: Applied Materials, Inc.

    Inventor： Hsin-wei Tseng ,  Casey Jane Madsen ,  Yikai Chen ,  Irena Wysok ,  Halbert Chong

    IPC: H01J37/32 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

    Abstract: Embodiments generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about 150 microinches to about 450 microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about 90 weight percent to about 99 weight percent, a thickness ranging from about 50 microns to about 500 microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1 E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.

    PROTECTIVE YTTRIA COATING FOR SEMICONDUCTOR EQUIPMENT PARTS
    27.
    发明申请
    PROTECTIVE YTTRIA COATING FOR SEMICONDUCTOR EQUIPMENT PARTS 审中-公开

    公开(公告)号：US20190264314A1

    公开(公告)日：2019-08-29

    申请号：US16274141

    申请日：2019-02-12

    Applicant: Applied Materials, Inc.

    Inventor： Ramesh Gopalan ,  Yixing Lin ,  Tasnuva Tabassum ,  Siamak Salimian ,  Yikai Chen ,  Kevin Papke

    IPC: C23C4/11 ,  C23C4/134 ,  H01L21/67

    Abstract: Disclosed herein is a poly-crystalline protective coating on a surface of a chamber component. The poly-crystalline protective coating may be deposited by thermal spraying and may comprise cubic yttria and monoclinic yttria. At least one of: (1) the ratio of the cubic yttria to monoclinic yttria, (2) the crystallite size of at least one of the cubic yttria or the monoclinic yttria, (3) the atomic ratio of oxygen (O) to yttria (Y), and/or (4) the dielectric properties of the poly-crystalline protective coating may be controlled to obtain consistent chamber performance when switching coated chamber components within a chamber of interest.

    Plasma spray coating design using phase and stress control
    29.
    发明授权
    Plasma spray coating design using phase and stress control 有权

    公开(公告)号：US10196728B2

    公开(公告)日：2019-02-05

    申请号：US14712054

    申请日：2015-05-14

    Applicant: Applied Materials, Inc.

    Inventor： Jennifer Y. Sun ,  Yikai Chen ,  Biraja Prasad Kanungo

    IPC: C23C4/11 ,  C23C4/134 ,  C04B35/505 ,  C04B35/48 ,  C04B35/10

    Abstract: To manufacture a coating for an article for a semiconductor processing chamber, the article including a body of at least one of Al, Al2O3, or SiC is provided and a ceramic coating is coated on the body, wherein the ceramic coating includes a compound of Y2O3, Al2O3, and ZrO2. The ceramic coating is applied to the body by a method including providing a plasma spraying system having a plasma current in the range of between about 100 A to about 1000 A, positioning a torch standoff of the plasma spraying system a distance from the body between about 60 mm and about 250 mm, flowing a first gas through the plasma spraying system at a rate of between about 30 L/min and about 400 L/min, and plasma spray coating the body to form a ceramic coating, wherein splats of the coating are amorphous and have a pancake shape.

    CLEANING PROCESS THAT PRECIPITATES YTTRIUM OXY-FLOURIDE
    30.
    发明申请
    CLEANING PROCESS THAT PRECIPITATES YTTRIUM OXY-FLOURIDE 有权

    公开(公告)号：US20170282221A1

    公开(公告)日：2017-10-05

    申请号：US15089212

    申请日：2016-04-01

    Applicant: Applied Materials, Inc.

    Inventor： Chengtsin Lee ,  Jennifer Y. Sun ,  Yikai Chen

    IPC: B08B3/12 ,  H01J37/32

    CPC classification number: B08B3/12 ,  C11D11/0023 ,  H01J37/32009 ,  H01J37/32862

    Abstract: A method includes immersing an article comprising a yttrium based oxide in an acidic cleaning solution comprising water and 1-10 mol % HF acid. A portion of the yttrium based oxide is dissolved by the HF acid. A yttrium based oxy-fluoride is formed based on a reaction between the HF acid and the dissolved portion of the yttrium based. The yttrium based oxy-fluoride is precipitated onto the article over the yttrium based oxide to form a yttrium based oxy-fluoride coating. The acidic cleaning solution may include a yttrium based salt, which may additionally react with the HF acid to form more of the yttrium based oxy-fluoride.

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