公开(公告)号：US11499231B2

公开(公告)日：2022-11-15

申请号：US16844089

申请日：2020-04-09

申请人： Applied Materials, Inc.

发明人： Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L21/67 ,  C23C16/458 ,  H01L21/02 ,  H01L27/11551 ,  H01L27/11578 ,  H01L21/687

摘要： Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

公开(公告)号：US10655223B2

公开(公告)日：2020-05-19

申请号：US16268194

申请日：2019-02-05

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/507 ,  H01J37/32 ,  C23C16/34 ,  C23C16/40 ,  C23C16/505

摘要： Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

公开(公告)号：US10002745B2

公开(公告)日：2018-06-19

申请号：US15145750

申请日：2016-05-03

申请人： Applied Materials, Inc.

发明人： Lin Zhang ,  Xuesong Lu ,  Andrew V. Le ,  Jang Seok Oh ,  Xinhai Han

IPC分类号： H01J37/32

CPC分类号： H01J37/32082 ,  H01J37/32862 ,  H01J2237/334 ,  H01J2237/335

摘要： Embodiments of the disclosure include methods for in-situ chamber cleaning efficiency enhancement process for a plasma processing chamber utilized for a semiconductor substrate fabrication process. In one embodiment, a method for performing a plasma treatment process after cleaning a plasma process includes performing a cleaning process in a plasma processing chamber in absent of a substrate disposed thereon, subsequently supplying a plasma treatment gas mixture including at least a hydrogen containing gas and/or an oxygen containing gas into the plasma processing chamber, applying a RF source power to the processing chamber to form a plasma from the plasma treatment gas mixture, and plasma treating an interior surface of the processing chamber.

公开(公告)号：US09716012B2

公开(公告)日：2017-07-25

申请号：US14560525

申请日：2014-12-04

申请人： Applied Materials, Inc.

发明人： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC分类号： H01L21/3205 ,  C23C16/04 ,  C23C16/18 ,  C23C16/455 ,  H01L21/285 ,  H01L21/768

CPC分类号： H01L21/32051 ,  C23C16/04 ,  C23C16/18 ,  C23C16/45551 ,  C23C16/45553 ,  H01L21/28562 ,  H01L21/76849

摘要： Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

公开(公告)号：US20150275364A1

公开(公告)日：2015-10-01

申请号：US14666689

申请日：2015-03-24

申请人： Applied Materials, Inc.

发明人： David Thompson ,  Huixiong Dai ,  Patrick M. Martin ,  Timothy Michaelson ,  Kadthala R. Narendrnath ,  Robert Jan Visser ,  Jingjing Xu ,  Lin Zhang

IPC分类号： C23C16/455 ,  C23C16/50 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/45536 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/56 ,  H01L21/68764 ,  H01L21/68771

摘要： Provided are apparatus and methods for the sequential deposition and annealing of a film within a single processing chamber. An energy source positioned within the processing chamber in an area isolated from process gases can be used to rapidly form and decompose a film on the substrate without damaging underlying layers due to exceeding the thermal budget of the device being formed.

摘要翻译： 提供了用于在单个处理室内顺序沉积和退火膜的装置和方法。 位于与处理气体隔离的区域内的处理室内的能量源可用于快速地形成和分解衬底上的膜，而不会由于超过正在形成的器件的热量预算而损坏下层。

公开(公告)号：US20230049431A1

公开(公告)日：2023-02-16

申请号：US17979099

申请日：2022-11-02

申请人： Applied Materials, Inc.

发明人： Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC分类号： C23C16/50 ,  H01J37/32 ,  H01L21/67 ,  C23C16/458 ,  H01L21/02 ,  H01L27/11551 ,  H01L21/687 ,  H01L27/11578

摘要： Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

公开(公告)号：US20220092241A1

公开(公告)日：2022-03-24

申请号：US16948522

申请日：2020-09-22

申请人： Applied Materials, Inc.

发明人： Ala Moradian ,  James Omer L'Heureux ,  Shuran Sheng ,  Rohit Mahakali ,  Karthik Ramanathan ,  Lin Zhang ,  Umesh Madhav Kelkar ,  Gopalakrishna B. Prabhu ,  Zheng Yuan ,  Jeonghoon Oh

IPC分类号： G06F30/28 ,  G01D21/02 ,  G01D18/00

摘要： A method includes receiving measurement data from multiple sensors positioned along a delivery line that delivers a liquid as a gas to one of a gas panel or a processing chamber; simulating, using a computer-generated model, one or more process parameters associated with the delivery line and a plurality of heater jackets positioned around the delivery line; comparing the measurement data with values of the one or more process parameters; and determining, based on at least a threshold deviation between the measurement data and the values of the one or more process parameters, that a fault exists that is associated with maintaining temperature within the delivery line consistent with a gaseous state of the liquid.

公开(公告)号：US11094647B2

公开(公告)日：2021-08-17

申请号：US16533145

申请日：2019-08-06

申请人： Applied Materials, Inc.

发明人： Shuran Sheng ,  Lin Zhang ,  Joseph C. Werner

IPC分类号： H01L21/02 ,  H01L23/00 ,  H01L27/11582 ,  C23C16/50 ,  C23C16/26 ,  C23C14/10 ,  C23C14/06 ,  C23C16/40 ,  C23C16/34 ,  C23C14/35

摘要： A method and apparatus for forming a backside coating on a substrate to counteract stresses from a previously deposited film is disclosed. In one embodiment, a method for flattening a bowed substrate includes providing a substrate having a film stack formed on a first major surface thereof, wherein the substrate comprises a bowed orientation, and forming a coating a second major surface of the substrate, wherein the coating is configured to counter stresses produced by the film stack and flattens the substrate from the bowed orientation.

公开(公告)号：US10192763B2

公开(公告)日：2019-01-29

申请号：US14875673

申请日：2015-10-05

申请人： Applied Materials, Inc.

发明人： Xuesong Lu ,  Lin Zhang ,  Andy Le

IPC分类号： H01L21/67 ,  C23C16/52 ,  G05B19/418 ,  H01J37/32 ,  C23C16/50

摘要： Embodiments of the present disclosure provide methodology to match and calibrate processing chamber performance in a processing chamber. In one embodiment, a method for calibrating a processing chamber for semiconductor manufacturing process includes performing a first predetermined process in a processing chamber, collecting a first set of signals transmitted from a first group of sensors disposed in the processing chamber to a controller while performing the predetermined process, analyzing the collected first set of signals, comparing the collected first set of signals with database stored in the controller to check sensor responses from the first group of sensors, calibrating sensors based on the collected first set of signals when a mismatch sensor response is found, subsequently performing a first series of processes in the processing chamber, and collecting a second set of signals transmitted from the sensors to the controller while performing the series of processes.

公开(公告)号：US10190701B2

公开(公告)日：2019-01-29

申请号：US15110714

申请日：2016-04-06

申请人： Applied Materials, Inc.

发明人： Govinda Raj ,  Hanish Kumar ,  Lin Zhang ,  Stanley Wu

IPC分类号： F16K41/10 ,  H01L21/687 ,  H01J37/32 ,  C23C16/44 ,  F16L11/15

摘要： Implementations described herein protect a chamber components from corrosive cleaning gases used at high temperatures. In one embodiment, a chamber component includes at least a bellows that includes a top mounting flange coupled to a bottom mounting flange by a tubular accordion structure. A coating is disposed on an exterior surface of at least the tubular accordion structure. The coating includes of at least one of polytetrafluoroethylene, parylene C, parylene D, diamond-like carbon (DLC), yttria stabilized zirconia, nickel, alumina, or aluminum silicon magnesium yttrium oxygen compound. In one embodiment, the chamber component is a valve having an internal bellows.