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公开(公告)号:US11718913B2
公开(公告)日:2023-08-08
申请号:US15997445
申请日:2018-06-04
Applicant: ASM IP Holding B.V.
Inventor: Sonti Sreeram , Junwei Su , Loc Vinh Tran
IPC: C23C16/455 , H01J37/32
CPC classification number: C23C16/45587 , C23C16/45557 , C23C16/45561 , C23C16/45563 , H01J37/32449 , H01J37/32458
Abstract: A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas distribution system coupled to a reaction chamber.
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公开(公告)号:US20220415677A1
公开(公告)日:2022-12-29
申请号:US17848933
申请日:2022-06-24
Applicant: ASM IP Holding B.V.
Inventor: Junwei Su , Rutvij Naik , Xing Lin , Alexandros Demos , Hamed Esmaeilzadehkhosravieh
Abstract: A reflector includes a reflector body arranged to overlap a reaction chamber of a semiconductor processing system. The reflector body has a grooved surface and a reflective surface extending between a first longitudinal edge of the reflector body and a second longitudinal edge of the reflector body, the reflective surface spaced apart from the grooved surface by a thickness of the reflector body. The grooved surface and the reflective surface define a pyrometer port, two or more elongated slots, and two or more shortened extending through the thickness of the reflector body. The shortened slots outnumber the elongated slots to bias issue of a coolant against the reaction chamber toward the second longitudinal edge of the reflector body. Cooling kits, semiconductor processing systems, and methods of cooling a reaction chamber during deposition of a film onto a substrate supported within the reaction chamber are also described.
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公开(公告)号:US20220352006A1
公开(公告)日:2022-11-03
申请号:US17730967
申请日:2022-04-27
Applicant: ASM IP Holding B.V.
Inventor: Shujin Huang , Junwei Su , Xing Lin , Alexandros Demos , Rutvij Naik , Wentao Wang , Matthew Goodman , Robin Scott , Amir Kajbafvala , Robinson James , Youness Alvandi-Tabrizi , Caleb Miskin
IPC: H01L21/687 , C23C16/52 , C23C16/458
Abstract: A susceptor has a circular pocket portion, an annular ledge portion, and an annular rim ledge portion. The circular pocket portion is arranged along a rotation axis and has a perforated surface. The annular ledge portion extends circumferentially about pocket portion and has ledge surface that slopes axially upward from the perforated surface. The rim portion extends circumferentially about the ledge portion and is connected to the pocket portion by the ledge portion of the susceptor. The susceptor has one or more of a tuned pocket, a contact break, a precursor vent, and a purge channel located radially outward of the perforated surface to control deposition of a film onto a substrate supported by the susceptor. Semiconductor processing systems, film deposition methods, and methods of making susceptors are also described.
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公开(公告)号:US11168395B2
公开(公告)日:2021-11-09
申请号:US16816078
申请日:2020-03-11
Applicant: ASM IP Holding B.V.
Inventor: Sonti Sreeram , John Tolle , Joe Margetis , Junwei Su
IPC: C23C16/455
Abstract: A flange, flange assembly, and reactor system including the flange and flange assembly are disclosed. An exemplary flange assembly includes heated and cooled sections to independently control temperatures of sections of the flange. Methods of using the flange, flange assembly and reactor system are also disclosed.
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公开(公告)号:US20200040458A1
公开(公告)日:2020-02-06
申请号:US16055532
申请日:2018-08-06
Applicant: ASM IP Holding B.V.
Inventor: Mingyang Ma , Junwei Su , Alexandros Demos , Xing Lin , Sam Kim , Gregory Michael Bartlett
IPC: C23C16/52 , C23C16/455 , C23C16/44 , H01J37/32 , B01J4/00
Abstract: A gas injection system, a reactor system including the gas injection system, and methods of using the gas injection system and reactor system are disclosed. The gas injection system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas injection system coupled to a reaction chamber.
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