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公开(公告)号:US11513442B2
公开(公告)日:2022-11-29
申请号:US16644206
申请日:2018-08-22
Applicant: ASML NETHERLANDS B.V.
Inventor: Wim Tjibbo Tel , Mark John Maslow , Koenraad Van Ingen Schenau , Patrick Warnaar , Abraham Slachter , Roy Anunciado , Simon Hendrik Celine Van Gorp , Frank Staals , Marinus Jochemsen
IPC: G03F7/00 , G03F1/00 , G06T7/00 , H01L21/00 , G06F30/20 , G21K5/00 , G03F7/20 , H01L21/66 , G06F119/18
Abstract: A method for determining a metric of a feature on a substrate obtained by a semiconductor manufacturing process involving a lithographic process, the method including: obtaining an image of at least part of the substrate, wherein the image includes at least the feature; determining a contour of the feature from the image; determining a plurality of segments of the contour; determining respective weights for each of the plurality of segments; determining, for each of the segments, an image-related metric; and determining the metric of the feature in dependence on the weights and the calculated image-related metric of each of the segments.
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公开(公告)号:US20220277116A1
公开(公告)日:2022-09-01
申请号:US17744091
申请日:2022-05-13
Applicant: ASML NETHERLANDS B.V.
Inventor: Jing SU , Yi Zou , Chenxi Lin , Stefan Hunsche , Marinus Jochemsen , Yen-Wen Lu , Lin Lee Cheong
Abstract: Methods of identifying a hot spot from a design layout or of predicting whether a pattern in a design layout is defective, using a machine learning model. An example method disclosed herein includes obtaining sets of one or more characteristics of performance of hot spots, respectively, under a plurality of process conditions, respectively, in a device manufacturing process; determining, for each of the process conditions, for each of the hot spots, based on the one or more characteristics under that process condition, whether that hot spot is defective; obtaining a characteristic of each of the process conditions; obtaining a characteristic of each of the hot spots; and training a machine learning model using a training set including the characteristic of one of the process conditions, the characteristic of one of the hot spots, and whether that hot spot is defective under that process condition.
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公开(公告)号:US20210216017A1
公开(公告)日:2021-07-15
申请号:US17214456
申请日:2021-03-26
Applicant: ASML NETHERLANDS B.V.
Inventor: Hans VAN DER LAAN , Wim Tjibbo Tel , Marinus Jochemsen , Stefan Hunsche
IPC: G03F7/20 , G06F30/398 , H01L21/66
Abstract: A process of selecting a measurement location, the process including: obtaining pattern data describing a pattern to be applied to substrates in a patterning process; obtaining a process characteristic measured during or following processing of a substrate, the process characteristic characterizing the processing of the substrate; determining a simulated result of the patterning process based on the pattern data and the process characteristic; and selecting a measurement location for the substrate based on the simulated result.
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公开(公告)号:US10859926B2
公开(公告)日:2020-12-08
申请号:US15580515
申请日:2016-05-25
Applicant: ASML NETHERLANDS B.V.
Inventor: Stefan Hunsche , Rafael Aldana Laso , Vivek Kumar Jain , Marinus Jochemsen , Xinjian Zhou
Abstract: A method of defect validation for a device manufacturing process, the method including: obtaining a first image of a pattern processed into an area on a substrate using the device manufacturing process under a first condition; obtaining a metrology image from the area; aligning the metrology image and the first image; and determining from the first image and the metrology image whether the area contains a defect, based on one or more classification criteria.
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公开(公告)号:US10725372B2
公开(公告)日:2020-07-28
申请号:US15546583
申请日:2016-01-20
Applicant: ASML Netherlands B.V.
Inventor: Wim Tjibbo Tel , Marinus Jochemsen , Frank Staals , Christopher Prentice , Laurent Michel Marcel Depre , Johannes Marcus Maria Beltman , Roy Werkman , Jochem Sebastiaan Wildenberg , Everhardus Cornelis Mos
IPC: G06F17/50 , G03F1/70 , G03F1/36 , G03F1/22 , G06T7/00 , G06F30/398 , G06F119/18 , G06F30/20 , G06F30/367
Abstract: A method includes determining topographic information of a substrate for use in a lithographic imaging system, determining or estimating, based on the topographic information, imaging error information for a plurality of points in an image field of the lithographic imaging system, adapting a design for a patterning device based on the imaging error information. In an embodiment, a plurality of locations for metrology targets is optimized based on imaging error information for a plurality of points in an image field of a lithographic imaging system, wherein the optimizing involves minimizing a cost function that describes the imaging error information. In an embodiment, locations are weighted based on differences in imaging requirements across the image field.
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26.
公开(公告)号:US09964865B2
公开(公告)日:2018-05-08
申请号:US15142671
申请日:2016-04-29
Applicant: ASML NETHERLANDS B.V.
Inventor: Cédric Désiré Grouwstra , Nicolaas Rudolf Kemper , Norbertus Josephus Martinus Van Den Nieuwelaar , Dirk De Vries , Hua Li , Marinus Jochemsen
CPC classification number: G03F7/70775 , G03F7/70341 , G03F7/70725
Abstract: A method of adjusting speed and/or routing of a part of a movement plan of a table under an immersion fluid supply system of a lithographic apparatus. The method includes splitting the movement plan of the table into a plurality of discrete movements; determining a risk of a bubble of a size greater than a certain size being present in immersion fluid through which a patterned beam of the lithographic apparatus will pass during a certain discrete movement by determining whether the immersion fluid supply system passes over a position at which immersion fluid leaked from the immersion fluid supply system is present; and adjusting the speed and/or routing of a part of the movement plan corresponding to (i) a discrete movement earlier than a discrete movement for which the risk of a bubble is determined, and/or (ii) a discrete movement for which the risk of a bubble is determined.
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