摘要:
A method is provided for forming a reflective plasmonic display. The method provides a substrate and deposits a bottom dielectric layer. A conductive film is deposited overlying the bottom dielectric layer. A hard mask is formed with nano-size openings overlying the conductive film. The conductive film is plasma etched via nano-size openings in the hard mask, stopping at the dielectric layer. After removing the hard mask, a conductive film is left with nano-size openings to the dielectric layer. Metal is deposited in the nano-size openings, creating a pattern of metallic nanoparticles overlying the dielectric layer. Then, the conductive film is removed. The hard mask may be formed by conformally depositing an Al film overlying the conductive film and anodizing the Al film, creating a hard mask of porous anodized Al oxide (AAO) film. The porous AAO film may form a short-range hexagonal, and long-range random order hole patterns.
摘要:
A full color range analog controlled interferometric modulation device is provided. The device includes a transparent substrate, and a transparent fixed-position electrically conductive electrode with a bottom surface overlying the substrate. A transparent spacer overlies the fixed-position electrode, and an induced absorber overlies the spacer. An optically reflective electrically conductive moveable membrane overlies the induced absorber. A cavity is formed between the induced absorber and the moveable membrane having a maximum air gap dimension less than the spacer thickness. In one aspect, the distance from the top surface of the fixed-position electrode to a cavity lower surface is at least twice as great as the cavity maximum air gap dimension. In another aspect, at least one anti-reflective coating (ARC) layer is interposed between the substrate and the fixed-position electrode, and at least one ARC layer is interposed between the fixed-position electrode and the spacer.
摘要:
A method is provided for forming a reflective plasmonic display. The method provides a substrate and deposits a bottom dielectric layer. A conductive film is deposited overlying the bottom dielectric layer. A hard mask is formed with nano-size openings overlying the conductive film. The conductive film is plasma etched via nano-size openings in the hard mask, stopping at the dielectric layer. After removing the hard mask, a conductive film is left with nano-size openings to the dielectric layer. Metal is deposited in the nano-size openings, creating a pattern of metallic nanoparticles overlying the dielectric layer. Then, the conductive film is removed. The hard mask may be formed by conformally depositing an Al film overlying the conductive film and anodizing the Al film, creating a hard mask of porous anodized Al oxide (AAO) film. The porous AAO film may form a short-range hexagonal, and long-range random order hole patterns.
摘要:
A plasmonic optical device is provided operating in near ultra violet (UV) and visible wavelengths of light. The optical device is made from a substrate and nanoparticles. The nanoparticles have a core with a negative real value relative permittivity of absolute value greater than 10 in a first range of wavelengths including near UV and visible wavelengths of light, and a shell with an imaginary relative permittivity of less than 5 in the first range of wavelengths. A dielectric overlies the substrate, and is embedded with the nanoparticles. If the substrate is reflective, a reflective optical filter is formed. If the substrate is transparent, the filter is transmissive. In one aspect, the dielectric is a tunable medium (e.g., liquid crystal) having an index of refraction responsive to an electric field. The tunable medium is interposed between a first electrode and a second electrode.
摘要:
Methods are provided for fabricating a multi-structure pore membrane. In one method, an anodized aluminum oxide (AAO) template is formed with an array of pores exposing underlying regions of a conductive layer top surface. A plurality of photoresist layers is patterned to sequentially expose a plurality of AAO template sections. Each exposed AAO template section is sequentially etched to widen pore diameters, so that each AAO template section may be associated with a corresponding unique pore diameter. A target material is deposited in the pores of the AAO template and, as a result, an array of target material structures is formed on the top surface, where the target material structures associated with each AAO template section have a corresponding diameter. Also provided is a multi-structure pixel device formed with subpixels having different structure dimensions.
摘要:
A full color range analog controlled interferometric modulation device is provided. The device includes a transparent substrate, and a transparent fixed-position electrically conductive electrode with a bottom surface overlying the substrate. A transparent spacer overlies the fixed-position electrode, and an induced absorber overlies the spacer. An optically reflective electrically conductive moveable membrane overlies the induced absorber. A cavity is formed between the induced absorber and the moveable membrane having a maximum air gap dimension less than the spacer thickness. In one aspect, the distance from the top surface of the fixed-position electrode to a cavity lower surface is at least twice as great as the cavity maximum air gap dimension. In another aspect, at least one anti-reflective coating (ARC) layer is interposed between the substrate and the fixed-position electrode, and at least one ARC layer is interposed between the fixed-position electrode and the spacer.
摘要:
A method is provided for improving metallic nanostructure stability. The method provides a substrate, and using a physical vapor deposition (PVD) process for example, deposits metallic nanostructures having a first diameter overlying the substrate. Some examples of metallic nanostructures include Ag, Au, and Al. The metallic nanostructures are annealed in an atmosphere including an inert gas and H2. The annealing temperature is less than the melting temperature the metal material in bulk form. In response to the annealing, stabilized metallic nanostructures are formed. If the stabilized metallic nanostructures are exposed to an ambient air environment the stabilized metallic nanostructure maintain the first diameter. Typically, the metallic nanostructures are initially formed having a rectangular shape with corners. After annealing, the stabilized metallic nanostructures have a dome shape.
摘要:
A method is provided for improving metallic nanostructure stability. The method provides a substrate, and using a physical vapor deposition (PVD) process for example, deposits metallic nanostructures having a first diameter overlying the substrate. Some examples of metallic nanostructures include Ag, Au, and Al. The metallic nanostructures are annealed in an atmosphere including an inert gas and H2. The annealing temperature is less than the melting temperature the metal material in bulk form. In response to the annealing, stabilized metallic nanostructures are formed. If the stabilized metallic nanostructures are exposed to an ambient air environment the stabilized metallic nanostructure maintain the first diameter. Typically, the metallic nanostructures are initially formed having a rectangular shape with corners. After annealing, the stabilized metallic nanostructures have a dome shape.
摘要:
An object of the invention is to provide a coupling element of an MEMS filter with design flexibility and minimization of mass loading effects. The invention provides a structure wherein the mass loading effects are not reflected on the MEMS filter characteristic by using a nanosize coupling element with a very small mass compared to a microsize MEMS resonator, such as a carbon nanotube (CNT), as a coupling element part.
摘要:
An electromechanical resonator includes a resonator portion which includes a fixed electrode and an oscillator formed separately from the fixed electrode with a gap. The gap has a first gap region and a second gap region which are arranged in a thickness direction of the fixed electrode. The first gap region is different in width from the second gap region.