公开(公告)号：US20100184302A1

公开(公告)日：2010-07-22

申请号：US12357174

申请日：2009-01-21

申请人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

发明人： Woo Jin LEE ,  Akira Shimizu ,  Atsuki Fukazawa

IPC分类号： H01L21/469

CPC分类号： C23C16/345 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3185

摘要： A method of forming a conformal dielectric film having Si—N bonds on a semiconductor substrate by plasma enhanced chemical vapor deposition (PECVD) includes: introducing a nitrogen- and hydrogen-containing reactive gas and an additive gas into a reaction space inside which a semiconductor substrate is placed; applying RF power to the reaction space; and introducing a hydrogen-containing silicon precursor in pulses into the reaction space wherein a plasma is excited, thereby forming a conformal dielectric film having Si—N bonds on the substrate.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）在半导体衬底上形成具有Si-N键的共形电介质膜的方法包括：将含氮和氢的反应气体和添加气体引入反应空间内， 底物放置; 向反应空间施加RF功率; 并将含氢的硅前体以脉冲方式引入到等离子体被激发的反应空间中，从而在衬底上形成具有Si-N键的保形电介质膜。

公开(公告)号：US20100124618A1

公开(公告)日：2010-05-20

申请号：US12618419

申请日：2009-11-13

申请人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

发明人： Akiko Kobayashi ,  Akira Shimizu ,  Kuo-wei Hong ,  Nobuyoshi Kobayashi ,  Atsuki Fukazawa

IPC分类号： B05D3/04

CPC分类号： C23C16/45542 ,  C23C16/345 ,  C23C16/56

摘要： A film forming cycle based on pulse CVD or ALD is repeated multiple times to form a single layer of insulation film, while a reforming cycle is implemented in the aforementioned process, either once or multiple times per each film forming cycle, by treating the surface of formed film using a treating gas that has been activated by a plasma.

摘要翻译： 基于脉冲CVD或ALD的成膜循环重复多次以形成单层绝缘膜，而在上述过程中重整循环是每个成膜循环一次或多次，通过处理 使用已经被等离子体激活的处理气体形成膜。

公开(公告)号：US07642681B2

公开(公告)日：2010-01-05

申请号：US11466649

申请日：2006-08-23

申请人： Kazuhiro Makiuchi ,  Akira Shimizu ,  Sakae Kishi

发明人： Kazuhiro Makiuchi ,  Akira Shimizu ,  Sakae Kishi

IPC分类号： H02K11/00

CPC分类号： H02K29/08

摘要： The present invention provides a rotary electric machine, in which it is possible to reduce the dimension of a casing in a direction along a rotation center line. The rotary electric machine comprises a magnet rotor 2 rotating about a rotation center line 1 and one or more magnetic sensors 11 for detecting leakage flux leaking out of the magnet rotor 2. The magnet rotor 2 and a stator 3 are received in a casing 4. A sensor receiving portion 12 for receiving the one or more magnetic sensors 11 is disposed in an outer wall portion of a side wall of the casing 4 located in an extending direction of the rotation center line 1 of the magnet rotor 2. The one or more magnetic sensors 11 are received in the sensor receiving portion 12. The sensor receiving portion 12 is disposed in a position that allows the one or more sensors to detect leakage flux leaking out of the magnet rotor 2.

摘要翻译： 本发明提供一种旋转电机，其中可以沿着旋转中心线的方向减小壳体的尺寸。 旋转电机包括围绕旋转中心线1旋转的磁体转子2和用于检测从磁体转子2泄漏的漏磁通的一个或多个磁传感器11.磁转子2和定子3被容纳在壳体4中。 用于容纳一个或多个磁传感器11的传感器接收部分12设置在壳体4的位于磁体转子2的旋转中心线1的延伸方向的侧壁的外壁部分中。一个或多个 磁传感器11被容纳在传感器接收部分12中。传感器接收部分12设置在允许一个或多个传感器检测从磁体转子2泄漏出来的漏磁通的位置。

公开(公告)号：US20090309117A1

公开(公告)日：2009-12-17

申请号：US11915921

申请日：2006-05-29

申请人： Mitsuru Okazaki ,  Naoki Takahashi ,  Akira Shimizu ,  Kenichi Nakata

发明人： Mitsuru Okazaki ,  Naoki Takahashi ,  Akira Shimizu ,  Kenichi Nakata

IPC分类号： H01L33/00 ,  H01L29/73 ,  H02H9/00

CPC分类号： H05B33/0884 ,  H01L27/0248 ,  H01L2224/48227 ,  H01L2224/49113 ,  H01L2924/1305 ,  H01L2924/30107 ,  Y02B20/341 ,  H01L2924/00

摘要： In a protection circuit connected, via lines including an inductance component, to a circuit to be protected, a first transistor is arranged on a path to ground from a connection point of the protection circuit and the line. A second transistor is arranged on a path to ground from a connection point of the circuit to be protected and the line, and extracts, from a connection point, a current corresponding to a current flowing in the first transistor. The first and the second transistors are NPN bipolar transistors having a base and an emitter are commonly connected. A resistor is connected between the base and the emitter of the first transistor, and a diode is connected between the base and a collector.

摘要翻译： 在通过包括电感分量的线路连接到保护电路的保护电路中，第一晶体管被布置在从保护电路和线路的连接点到达的路径上。 第二晶体管被布置在从被保护电路的连接点到线路的路径上，并从连接点提取与流过第一晶体管的电流相对应的电流。 第一和第二晶体管是具有基极和发射极共同连接的NPN双极晶体管。 电阻器连接在第一晶体管的基极和发射极之间，二极管连接在基极和集电极之间。

公开(公告)号：US07617265B2

公开(公告)日：2009-11-10

申请号：US11483548

申请日：2006-07-11

申请人： Daisuke Ito ,  Kazutomo Ushijima ,  Akira Shimizu

发明人： Daisuke Ito ,  Kazutomo Ushijima ,  Akira Shimizu

IPC分类号： G06F17/30

CPC分类号： G06F17/30321 ,  Y10S707/955 ,  Y10S707/956 ,  Y10S707/968 ,  Y10S707/99943 ,  Y10S707/99952 ,  Y10S707/99957

摘要： When operating a database management system that consists of a plurality of database servers and enables the database servers to transfer data between them by partitioning a data area into small areas and altering allocation of the small areas to the database servers, after altering the configuration, there occurs degradation in processing speed that accompanies re-creation of the index. If this problem is solved by using the conventional technique, noticeable degradation in processing speed will occur to a specific query at the time of a steady state operation. When operating the database management system that consists of the plurality of database servers and enables the database servers to transfer data between them by partitioning the database area into small areas and altering the allocation of the small areas to the database server, an index created for each of the small areas and an index to all the small areas allocated to the database server are used in combination.

摘要翻译： 当操作由多个数据库服务器组成的数据库管理系统并且使数据库服务器能够通过将数据区域划分成小区域并且将小区域的分配改变到数据库服务器来在其间传输数据时，在更改配置之后， 伴随重新创建索引的处理速度发生降级。 如果通过使用传统技术解决了这个问题，则在稳定状态操作时，特定查询将发生处理速度明显的下降。 当操作由多个数据库服务器组成的数据库管理系统并且使数据库服务器能够通过将数据库区域分割成小区域并且将小区域的分配改变为数据库服务器来传输数据时，为每个数据库服务器创建一个索引 的小区域和分配给数据库服务器的所有小区域的索引组合使用。

公开(公告)号：US20090219065A1

公开(公告)日：2009-09-03

申请号：US11720910

申请日：2005-12-21

申请人： Akira Shimizu

发明人： Akira Shimizu

IPC分类号： H03L7/00

CPC分类号： H04L12/40 ,  H04L12/40039

摘要： A read-start-timing set circuit is connected to a timing terminal (CT1) of a semiconductor device. By comparing an internal signal of this semiconductor device with an external signal on a bus line, the read timing immediately after power is turned on is modified. Since data transmission onto the bus line from another semiconductor device is inhibited, adjustment is effected to avoid data collision between the semiconductor devices. Therefore, automatic reading after power is turned on can be conducted while avoiding data collision between the semiconductor devices on the bus line to which a plurality of semiconductor devices are connected. Furthermore, a relevant semiconductor device can be readily attached onto the bus line.

摘要翻译： 读取启动时序设置电路连接到半导体器件的定时端子（CT1）。 通过将该半导体器件的内部信号与总线上的外部信号进行比较，电源接通之后的读取时序被修改。 由于抑制了从另一个半导体器件到总线上的数据传输，所以进行调整以避免半导体器件之间的数据冲突。 因此，可以在避免与多个半导体器件连接的总线上的半导体器件之间的数据冲突的同时进行电源接通之后的自动读取。 此外，相关的半导体器件可以容易地附接到总线上。

公开(公告)号：US07462245B2

公开(公告)日：2008-12-09

申请号：US10618900

申请日：2003-07-14

申请人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Kanayama

发明人： Akira Shimizu ,  Hideaki Fukuda ,  Hiroki Kanayama

IPC分类号： C23C16/448 ,  C23C16/44 ,  C23C16/06

CPC分类号： C23C16/45565 ,  C23C16/4481 ,  C23C16/4557 ,  C23C16/52

摘要： A single-wafer-processing type CVD apparatus for forming a thin film on an object to be processed includes a reaction chamber, a susceptor for placing the object thereon, a shower plate for emitting a jet of reaction gas to the object, which is set up in parallel and opposing to the susceptor, an orifice for bringing a liquid raw material and a carrier gas into the reaction chamber, which is formed through the ceiling of the reaction chamber, an evaporation plate means for vaporizing the liquid raw material, which is set up in a space between the ceiling of the reaction chamber and the shower plate, and a temperature controlling mechanism for controlling the shower plate and the evaporation plate means at respective given temperatures.

摘要翻译： 用于在待处理物体上形成薄膜的单晶片加工型CVD装置包括反应室，用于放置物体的基座，用于向物体喷射反应气体喷射的喷淋板，其被设定 平行且相对于基座的孔，用于将液体原料和载气引入通过反应室顶部形成的反应室的孔，用于使液态原料蒸发的蒸发板装置 设置在反应室的顶板和喷淋板之间的空间中，以及用于在各自的给定温度下控制喷淋板和蒸发板装置的温度控制机构。

公开(公告)号：US20080054340A1

公开(公告)日：2008-03-06

申请号：US11877075

申请日：2007-10-23

申请人： Fumitaka Arai ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

发明人： Fumitaka Arai ,  Yasuhiko Matsunaga ,  Makoto Sakuma ,  Riichiro Shirota ,  Akira Shimizu

IPC分类号： H01L29/788

CPC分类号： H01L27/115 ,  G11C16/0483 ,  G11C16/10 ,  H01L21/28273 ,  H01L27/11521 ,  H01L29/42324 ,  H01L29/42336 ,  H01L29/7883

摘要： A floating gate is formed on a semiconductor substrate via a gate insulating film. Diffused layers are formed as sources or drain regions on opposite sides of the floating gate in the semiconductor substrate. First and second control gates are formed opposite to both of the diffused layers on the opposite sides of the floating gate via an inter-gate insulating film to drive the floating gate.

摘要翻译： 通过栅极绝缘膜在半导体衬底上形成浮栅。 扩散层在半导体衬底中的浮置栅极的相对侧上形成为源区或漏极区。 第一和第二控制栅极通过栅极间绝缘膜与浮动栅极的相对侧上的两个扩散层相对形成，以驱动浮置栅极。

公开(公告)号：US20070218701A1

公开(公告)日：2007-09-20

申请号：US11376048

申请日：2006-03-15

申请人： Akira Shimizu ,  Wonyong Koh ,  Hyung-Sang Park ,  Young-Duck Tak

发明人： Akira Shimizu ,  Wonyong Koh ,  Hyung-Sang Park ,  Young-Duck Tak

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： C23C16/45551 ,  C23C16/06 ,  C23C16/36 ,  H01L21/67161 ,  H01L21/67748 ,  H01L21/68764

摘要： An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.

摘要翻译： 一种用于在处理目标上沉积薄膜的设备包括：反应空间; 感受器可上下移动并围绕其中心轴线旋转; 以及隔离壁，其将反应空间分成多个隔室，包括源气体室和净化气体室，其中当基座升高以进行薄膜沉积时，在基座和隔离壁之间产生小的间隙，从而在相应的 隔室，其中每个源气体隔室和每个吹扫气室交替地设置在基座的基座转动方向上。

公开(公告)号：US20070215036A1

公开(公告)日：2007-09-20

申请号：US11376817

申请日：2006-03-15

申请人： Hyung-Sang Park ,  Young-Duck Tak ,  Wonyong Koh ,  Akira Shimizu

发明人： Hyung-Sang Park ,  Young-Duck Tak ,  Wonyong Koh ,  Akira Shimizu

IPC分类号： C30B23/00 ,  C23C16/00

CPC分类号： C23C16/45551

摘要： Space and time co-divided atomic layer deposition (ALD) apparatuses and methods are provided. Substrates are moved (e.g., rotated) among multiple reaction zones, each of which is exposed to only one ALD reactant. At the same time, reactants are pulsed in each reaction zone, with purging or other gas removal methods between pulses. Separate exhaust passages for each reactant and purging during wafer movement minimizes particle contamination. Additionally, preferred embodiments permit different pulsing times in each reaction space, thus permitting flexibility in pulsing.

摘要翻译： 提供空间和时间共分离原子层沉积（ALD）装置和方法。 衬底在多个反应区域中移动（例如旋转），每个反应区域仅暴露于一个ALD反应物。 同时，反应物在每个反应区域被脉冲，在脉冲之间进行吹扫或其它气体去除方法。 每个反应物的分离排气通道和晶片移动过程中的清洗使颗粒污染最小化。 此外，优选实施例允许在每个反应空间中不同的脉冲时间，从而允许脉冲的灵活性。