公开(公告)号：US20070218701A1

公开(公告)日：2007-09-20

申请号：US11376048

申请日：2006-03-15

申请人： Akira Shimizu ,  Wonyong Koh ,  Hyung-Sang Park ,  Young-Duck Tak

发明人： Akira Shimizu ,  Wonyong Koh ,  Hyung-Sang Park ,  Young-Duck Tak

IPC分类号： C23C16/00 ,  H01L21/31

CPC分类号： C23C16/45551 ,  C23C16/06 ,  C23C16/36 ,  H01L21/67161 ,  H01L21/67748 ,  H01L21/68764

摘要： An apparatus for depositing thin film on a processing target includes: a reaction space; a susceptor movable up and down and rotatable around its center axis; and isolation walls that divide the reaction space into multiple compartments including source gas compartments and purge gas compartments, wherein when the susceptor is raised for film deposition, a small gap is created between the susceptor and the isolation walls, thereby establishing gaseous separation between the respective compartments, wherein each source gas compartment and each purge gas compartment are provided alternately in a susceptor-rotating direction of the susceptor.

摘要翻译： 一种用于在处理目标上沉积薄膜的设备包括：反应空间; 感受器可上下移动并围绕其中心轴线旋转; 以及隔离壁，其将反应空间分成多个隔室，包括源气体室和净化气体室，其中当基座升高以进行薄膜沉积时，在基座和隔离壁之间产生小的间隙，从而在相应的 隔室，其中每个源气体隔室和每个吹扫气室交替地设置在基座的基座转动方向上。

公开(公告)号：US20070215036A1

公开(公告)日：2007-09-20

申请号：US11376817

申请日：2006-03-15

申请人： Hyung-Sang Park ,  Young-Duck Tak ,  Wonyong Koh ,  Akira Shimizu

发明人： Hyung-Sang Park ,  Young-Duck Tak ,  Wonyong Koh ,  Akira Shimizu

IPC分类号： C30B23/00 ,  C23C16/00

CPC分类号： C23C16/45551

摘要： Space and time co-divided atomic layer deposition (ALD) apparatuses and methods are provided. Substrates are moved (e.g., rotated) among multiple reaction zones, each of which is exposed to only one ALD reactant. At the same time, reactants are pulsed in each reaction zone, with purging or other gas removal methods between pulses. Separate exhaust passages for each reactant and purging during wafer movement minimizes particle contamination. Additionally, preferred embodiments permit different pulsing times in each reaction space, thus permitting flexibility in pulsing.

摘要翻译： 提供空间和时间共分离原子层沉积（ALD）装置和方法。 衬底在多个反应区域中移动（例如旋转），每个反应区域仅暴露于一个ALD反应物。 同时，反应物在每个反应区域被脉冲，在脉冲之间进行吹扫或其它气体去除方法。 每个反应物的分离排气通道和晶片移动过程中的清洗使颗粒污染最小化。 此外，优选实施例允许在每个反应空间中不同的脉冲时间，从而允许脉冲的灵活性。

公开(公告)号：US20080069955A1

公开(公告)日：2008-03-20

申请号：US11857294

申请日：2007-09-18

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US08215264B2

公开(公告)日：2012-07-10

申请号：US13171899

申请日：2011-06-29

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US07976898B2

公开(公告)日：2011-07-12

申请号：US11857294

申请日：2007-09-18

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/00

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US20110308460A1

公开(公告)日：2011-12-22

申请号：US13171899

申请日：2011-06-29

申请人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

发明人： Kyung Il Hong ,  Dae Youn Kim ,  Hyung-Sang Park ,  Sang Jin Jeong ,  Wonyong Koh ,  Herbert Terhorst

IPC分类号： C23C16/455 ,  C23C16/509 ,  C23C16/458

CPC分类号： C23C16/45544 ,  C23C16/045 ,  C23C16/45508

摘要： The present invention relates to an ALD apparatus, and particularly relates to an ALD apparatus that is suitable for rapidly depositing a thin film on a substrate having an actual area that is larger than a planar substrate. In the reaction chamber of the ALD apparatus according to an exemplary embodiment of the present invention, more gas is supplied to a portion where more gas is required by having differences in the space for gas to flow rather than supplying the gas in a constant flux and a constant flow velocity such that the time required for supplying reactant gases and waste of reactant gases may be minimized to increase productivity of the ALD apparatus. The ceiling of the reaction space is shaped to provide a nonuniform gap over the substrate.

摘要翻译： 本发明涉及一种ALD装置，特别涉及适用于在具有大于平面基板的实际面积的基板上快速沉积薄膜的ALD装置。 在根据本发明的示例性实施例的ALD装置的反应室中，通过使气体流动空间不同而不是以恒定通量供给气体，将更多的气体供给到需要更多气体的部分， 恒定的流速，使得供应反应气体和反应物气体的废物所需的时间可以最小化，以提高ALD设备的生产率。 反应空间的顶部被成形为在基底上提供不均匀的间隙。

公开(公告)号：US20060121733A1

公开(公告)日：2006-06-08

申请号：US11254071

申请日：2005-10-18

申请人： Olli Kilpela ,  Wonyong Koh ,  Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

发明人： Olli Kilpela ,  Wonyong Koh ,  Hannu Huotari ,  Marko Tuominen ,  Miika Leinikka

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/18 ,  C23C16/45525 ,  H01L21/28562 ,  H01L21/32051 ,  H01L21/76814 ,  H01L21/76834 ,  H01L21/76843 ,  H01L21/76849

摘要： A method for enhancing the reliability of copper interconnects and/or contacts, such as the bottom of vias exposing top surfaces of buried copper, or at the top of copper lines just after CMP. The method comprises contacting the exposed copper surface with a vapor phase compound of a noble metal and selectively forming a layer of the noble metal on the exposed copper surface, either by a copper replacement reaction or selective deposition (e.g., ALD or CVD) of the noble metal.

公开(公告)号：US20080171436A1

公开(公告)日：2008-07-17

申请号：US11972081

申请日：2008-01-10

申请人： Wonyong Koh ,  Chun Soo Lee

发明人： Wonyong Koh ,  Chun Soo Lee

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  C23C16/45525 ,  H01L21/28562

摘要： Cyclical methods of depositing a ruthenium film on a substrate are provided. In one process, each cycle includes supplying a ruthenium organometallic compound gas to the reactor; purging the reactor; supplying a ruthenium tetroxide (RuO4) gas to the reactor; and purging the reactor. In another process, each cycle includes simultaneously supplying RuO4 and a reducing agent gas; purging; and supplying a reducing agent gas. The methods provide a high deposition rate while providing good step coverage over structures having a high aspect ratio.

摘要翻译： 提供了在基片上沉积钌膜的循环方法。 在一个过程中，每个循环包括向反应器提供钌有机金属化合物气体; 清除反应堆; 向反应器供应四氧化钌（RuO 4 S 4）气体; 并清洗反应器。 在另一个方法中，每个循环包括同时提供RuO 4 S 4和还原剂气体; 清洗 并供给还原剂气体。 该方法提供高的沉积速率，同时在具有高纵横比的结构上提供良好的阶梯覆盖。

公开(公告)号：US20080075858A1

公开(公告)日：2008-03-27

申请号：US11859104

申请日：2007-09-21

申请人： Wonyong Koh

发明人： Wonyong Koh

IPC分类号： C23C16/453 ,  B05C11/10

CPC分类号： C23C16/405 ,  C23C16/06 ,  C23C16/403 ,  C23C16/45544 ,  C23C16/54 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/3142 ,  H01L21/3162 ,  H01L21/31645

摘要： ALD apparatuses and methods of depositing multiple layers employ a plurality of reaction spaces. The reaction chamber includes inlets configured to introduce reactant gases sufficient to achieve a first ALD process into a first set of the reaction spaces for a first period of time such that the reactant gases are not mixed one another. The ALD apparatus further includes a driver configured to move the substrates through all of the of reaction spaces in a plurality of cycles during the first period such that a first thin film is deposited by space-divided ALD on each of the substrates. Other inlets introduce reactant gases sufficient to achieve a second ALD process into a second set of the reaction spaces for a second period of time, while purge gas is fed to the first set of reaction spaces. The driver moves the substrates through all of the reaction spaces in a plurality of cycles during the second period such that a second thin film of a different composition from the first film is deposited by space-divided ALD on each of the substrates. Additional sets of reaction spaces can be added for third, fourth, etc. ALD processes. The configuration of the ALD apparatus permits deposition of nanolaminate films on a plurality of substrates for a relatively short period of time while preventing undesired deposition by reaction between the reactant gases.

摘要翻译： ALD装置和沉积多层的方法采用多个反应空间。 反应室包括入口，其构造成将足以在第一时间段内实现第一组反应空间的第一ALD工艺的反应气体引入，使得反应气体不彼此混合。 所述ALD装置还包括驱动器，所述驱动器被配置为在所述第一时段期间以多个周期移动所述基板通过所有的反应空间，从而通过每个所述基板上的空间划分的ALD沉积第一薄膜。 其它入口引入足以在第二时间段内将第二组ALD工艺进入第二组反应空间的反应气体，同时吹扫气体被供给到第一组反应空间。 驱动器在第二周期期间以多个周期移动基板穿过所有反应空间，从而通过在每个基板上的空间划分的ALD沉积与第一膜不同组成的第二薄膜。 可以为第三，第四等ALD工艺添加额外的反应空间。 ALD装置的配置允许在相当短的时间段内在多个基板上沉积纳米层间膜，同时防止反应气体之间的反应引起不希望的沉积。

公开(公告)号：US5955146A

公开(公告)日：1999-09-21

申请号：US981388

申请日：1997-12-18

申请人： Yunsoo Kim ,  Wonyong Koh ,  Sujin Ku

发明人： Yunsoo Kim ,  Wonyong Koh ,  Sujin Ku

IPC分类号： C01F5/06 ,  C01F5/02 ,  C23C16/40 ,  C30B25/02 ,  C30B29/06 ,  C30B29/42 ,  C23C16/00

CPC分类号： C23C16/403 ,  C30B25/02 ,  C30B29/16

摘要： A process for coating the surface of a single crystal with a magnesium oxide film which comprises contacting an organomagnesium compound having an oxygen to magnesium atomic ratio of 1:1 with the crystal heated to a temperature ranging from 300.degree. C. to 450.degree. C. in the absence of oxygen. The magnesium oxide film thus produced has a negligible amount of residual carbon.

摘要翻译： PCT No.PCT / KR96 / 00102 Sec。 371 1997年12月18日第 102（e）日期1997年12月18日PCT提交1996年7月3日PCT公布。 出版物WO97 / 02368 日期1997年1月23日一种用氧化镁膜涂覆单晶表面的方法，该方法包括使氧与镁原子比为1:1的有机镁化合物与加热至300℃的晶体接触。 至450℃。 由此制造的氧化镁膜的残留量可以忽略不计。