公开(公告)号：US20200251614A1

公开(公告)日：2020-08-06

申请号：US16783737

申请日：2020-02-06

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L33/42 ,  H01L33/30 ,  H01L33/00 ,  H01L33/06 ,  H01L27/01 ,  H01L23/00 ,  H01L27/15 ,  H01L25/075

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US10714655B2

公开(公告)日：2020-07-14

申请号：US16545919

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20200005720A1

公开(公告)日：2020-01-02

申请号：US16512286

申请日：2019-07-15

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/34 ,  G09G3/3233 ,  H01L25/075 ,  H01L25/16 ,  G09G3/3266 ,  G09G3/3216 ,  G09G3/20 ,  G09G3/32

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：US10193013B2

公开(公告)日：2019-01-29

申请号：US15828081

申请日：2017-11-30

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20180190211A1

公开(公告)日：2018-07-05

申请号：US15908499

申请日：2018-02-28

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/34 ,  G09G3/20 ,  H01L25/16 ,  H01L25/075 ,  G09G3/32

CPC classification number: G09G3/3426 ,  G09G3/2088 ,  G09G3/32 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2310/08 ,  G09G2320/029 ,  G09G2330/028 ,  H01L25/0753 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：US09959815B2

公开(公告)日：2018-05-01

申请号：US15479962

申请日：2017-04-05

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/20 ,  H01L25/16 ,  G09G3/34 ,  G09G3/32 ,  H01L25/075

CPC classification number: G09G3/3426 ,  G09G3/2088 ,  G09G3/32 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2310/08 ,  G09G2320/029 ,  G09G2330/028 ,  H01L25/0753 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：US20170206845A1

公开(公告)日：2017-07-20

申请号：US15479962

申请日：2017-04-05

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/34 ,  H01L25/075 ,  H01L25/16 ,  G09G3/32

CPC classification number: G09G3/3426 ,  G09G3/2088 ,  G09G3/32 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2310/08 ,  G09G2320/029 ,  G09G2330/028 ,  H01L25/0753 ,  H01L25/167 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：US20160336484A1

公开(公告)日：2016-11-17

申请号：US15223900

申请日：2016-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L27/15 ,  H01L33/42 ,  H01L33/30 ,  H01L33/00 ,  H01L25/075 ,  H01L33/06

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US09484492B2

公开(公告)日：2016-11-01

申请号：US14853614

申请日：2015-09-14

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/38 ,  H01L33/30

CPC classification number: H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Abstract translation: 公开了LED结构，以减少沿着垂直LED的侧壁的非辐射侧壁复合，包括跨越顶部电流扩散层的p-n二极管侧壁，底部电流扩展层以及顶部电流扩展层和底部电流扩散层之间的有源层。

公开(公告)号：US20160315218A1

公开(公告)日：2016-10-27

申请号：US15199803

申请日：2016-06-30

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.