公开(公告)号：US11488856B2

公开(公告)日：2022-11-01

申请号：US17069195

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/02 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US20220172948A1

公开(公告)日：2022-06-02

申请号：US17672305

申请日：2022-02-15

Applicant: Applied Materials, Inc.

Inventor： Jie Zhou ,  Erica Chen ,  Qiwei Liang ,  Chentsau Chris Ying ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: A method of forming graphene layers is disclosed. A method of improving graphene deposition is also disclosed. Some methods are advantageously performed at lower temperatures. Some methods advantageously provide graphene layers with lower resistance. Some methods advantageously provide graphene layers in a relatively short period of time.

公开(公告)号：US20210028055A1

公开(公告)日：2021-01-28

申请号：US17069195

申请日：2020-10-13

Applicant: Applied Materials, Inc.

Inventor： Pramit Manna ,  Ludovic Godet ,  Rui Cheng ,  Erica Chen ,  Ziqing Duan ,  Abhijit Basu Mallick ,  Srinivas Gandikota

IPC: H01L21/762 ,  H01L21/02 ,  H01L21/768 ,  H01L23/31 ,  H01L29/06

Abstract: Methods for seam-less gapfill comprising sequentially depositing a film with a seam, reducing the height of the film to remove the seam and repeating until a seam-less film is formed. Some embodiments include optional film doping and film treatment (e.g., ion implantation and annealing).

公开(公告)号：US10770292B2

公开(公告)日：2020-09-08

申请号：US16008495

申请日：2018-06-14

Applicant: Applied Materials, Inc.

Inventor： Chang Ke ,  Lei Zhou ,  Biao Liu ,  Cheng Pan ,  Yuanhong Guo ,  Liqi Wu ,  Michael S. Jackson ,  Ludovic Godet ,  Tobin Kaufman-Osborn ,  Erica Chen ,  Paul F. Ma

IPC: H01L21/027 ,  H01L21/02 ,  H01L21/67 ,  H01L21/3105 ,  H01L21/683 ,  H01L21/32

Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.

公开(公告)号：US09777378B2

公开(公告)日：2017-10-03

申请号：US14635589

申请日：2015-03-02

Applicant: Applied Materials, Inc.

Inventor： Srinivas D. Nemani ,  Erica Chen ,  Ludovic Godet ,  Jun Xue ,  Ellie Y. Yieh

IPC: C23C16/56 ,  C23C16/32 ,  C23C14/48 ,  C23C16/40 ,  C23C16/04

CPC classification number: C23C16/56 ,  C23C16/045 ,  C23C16/401

Abstract: Embodiments described herein relate to methods for forming flowable chemical vapor deposition (FCVD) films suitable for high aspect ratio gap fill applications. Various process flows described include ion implantation processes utilized to treat a deposited FCVD film to improve dielectric film density and material composition. Ion implantation processes, curing processes, and annealing processes may be utilized in various sequence combinations to form dielectric films having improved densities at temperatures within the thermal budget of device materials. Improved film quality characteristics include reduced film stress and reduced film shrinkage when compared to conventional FCVD film formation processes.

公开(公告)号：US09595467B2

公开(公告)日：2017-03-14

申请号：US14597149

申请日：2015-01-14

Applicant: Applied Materials, Inc.

Inventor： Jun Xue ,  Ludovic Godet ,  Erica Chen ,  Srinivas D. Nemani ,  Ellie Y. Yieh

IPC: H01L21/786 ,  H01L21/311 ,  H01L21/3115 ,  H01L21/768 ,  H01L21/223 ,  H01J37/32 ,  H01L23/522

CPC classification number: H01L21/7682 ,  H01J37/32357 ,  H01J37/32366 ,  H01J37/32412 ,  H01J37/32422 ,  H01L21/2236 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/31155 ,  H01L21/768 ,  H01L21/76825 ,  H01L23/5222

Abstract: Methods for forming air gaps in an interconnection structure with desired materials formed on different locations of the interconnection structure using an ion implantation process to define an etching boundary followed by an etching process for semiconductor devices are provided. In one embodiment, a method for forming air gaps in an interconnection structure on a substrate, the method includes implanting ions in a first region of an insulating material disposed on a substrate, leaving a second region without implanted ions, the second region having a first surface interfaced with the first region and a second surface interfaced with the substrate, and performing an etching process to selectively etch the second region away from the substrate, forming an air gap between the first region and the substrate.

Abstract translation: 提供了使用离子注入工艺形成在互连结构的不同位置上形成的所需材料的互连结构中的空气间隙以限定蚀刻边界，然后进行半导体器件的蚀刻工艺的方法。 在一个实施例中，一种用于在衬底上形成互连结构中的气隙的方法，所述方法包括将离子注入设置在衬底上的绝缘材料的第一区域中，留下没有注入离子的第二区域，第二区域具有第一 与第一区域接合的表面和与衬底接合的第二表面，以及执行蚀刻工艺以选择性地蚀刻第二区域远离衬底，在第一区域和衬底之间形成气隙。