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    Method and apparatus for laser drilling blind vias
    25.
    发明授权
    Method and apparatus for laser drilling blind vias 有权

    公开(公告)号：US11232951B1

    公开(公告)日：2022-01-25

    申请号：US16928252

    申请日：2020-07-14

    Applicant: Applied Materials, Inc.

    Inventor： Wei-Sheng Lei ,  Kurtis Leschkies ,  Roman Gouk ,  Steven Verhaverbeke ,  Visweswaren Sivaramakrishnan

    IPC: H01L21/268 ,  H01L21/768 ,  B23K26/386 ,  H01L21/68 ,  B23K26/00 ,  H01L21/67

    Abstract: In an embodiment is provided a method of forming a blind via in a substrate comprising a mask layer, a conductive layer, and a dielectric layer that includes conveying the substrate to a scanning chamber; determining one or more properties of the blind via, the one or more properties comprising a top diameter, a bottom diameter, a volume, or a taper angle of about 80° or more; focusing a laser beam at the substrate to remove at least a portion of the mask layer; adjusting the laser process parameters based on the one or more properties; and focusing the laser beam, under the adjusted laser process parameters, to remove at least a portion of the dielectric layer within the volume to form the blind via. In some embodiments, the mask layer can be pre-etched. In another embodiment is provided an apparatus for forming a blind via in a substrate.

    Reduced volume processing chamber
    26.
    发明授权
    Reduced volume processing chamber 有权

    公开(公告)号：US11133174B2

    公开(公告)日：2021-09-28

    申请号：US16352631

    申请日：2019-03-13

    Applicant: Applied Materials, Inc.

    Inventor： Roman Gouk ,  Han-Wen Chen ,  Steven Verhaverbeke ,  Jean Delmas

    IPC: H01L21/02 ,  H01L21/67

    Abstract: Embodiments described herein generally relate to a processing chamber having a reduced volume for performing supercritical drying processes or other phase transition processes. The chamber includes a substrate support moveably disposed on a first track and a door moveably disposed on a second track. The substrate support and door may be configured to move independently of one another and the chamber may be configured to minimize vertical movement of the substrate within the chamber.

    Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures
    27.
    发明授权
    Stiction-free drying process with contaminant removal for high-aspect ratio semiconductor device structures 有权

    公开(公告)号：US11011392B2

    公开(公告)日：2021-05-18

    申请号：US16422477

    申请日：2019-05-24

    Applicant: Applied Materials, Inc.

    Inventor： Steven Verhaverbeke ,  Han-Wen Chen ,  Roman Gouk

    IPC: H01L21/02 ,  B08B3/08 ,  B08B7/00 ,  H01L21/67 ,  H01L21/677

    Abstract: Embodiments of the present disclosure generally relate to a method of cleaning a substrate. More specifically, embodiments of the present disclosure relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. In an embodiment, a method of cleaning a substrate includes exposing a substrate having high aspect ratio features formed thereon to a first solvent to remove an amount of a residual cleaning solution disposed on a surface of the substrate, exposing the surface of the substrate to a second solvent to remove the first solvent disposed on the surface of the substrate, exposing the surface of the substrate to a supercritical fluid to remove the second solvent disposed on the surface of the substrate, and exposing the surface of the substrate to electromagnetic energy.

    Package structure with embedded core
    28.
    发明授权
    Package structure with embedded core 有权

    公开(公告)号：US10937726B1

    公开(公告)日：2021-03-02

    申请号：US16746681

    申请日：2020-01-17

    Applicant: Applied Materials, Inc.

    Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent DiCaprio

    IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48

    Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

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