公开(公告)号：US20150371868A1

公开(公告)日：2015-12-24

申请号：US14320597

申请日：2014-06-30

Applicant: Applied Materials, Inc.

Inventor： Ying ZHANG ,  Hua CHUNG

IPC: H01L21/311 ,  H01L29/10 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/66795 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/32357 ,  H01J37/32449 ,  H01J37/32541 ,  H01J37/32568 ,  H01L21/02233 ,  H01L21/02236 ,  H01L21/02252 ,  H01L21/02359 ,  H01L21/02603 ,  H01L21/02606 ,  H01L21/265 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/31116 ,  H01L21/324 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/1033 ,  H01L29/16 ,  H01L29/161 ,  H01L29/66439 ,  H01L29/66469 ,  H01L29/66666 ,  H01L29/775

Abstract: Embodiments of the present disclosure provide methods for forming nanowire structures with desired materials for three dimensional (3D) stacking of fin field effect transistor (FinFET) for semiconductor chips. In one example, a method of forming nanowire structures on a substrate includes in a suspended nanowire structure on a substrate, the suspended nanowire includes multiple material layers having a spaced apart relationship repeatedly formed in the suspended nanowire structure, wherein the material layer includes a coating layer coated on an outer surface of a main body formed in the material layer, selectively removing a first portion of the coating layer from the material layers to expose the underlying main body of the material layers while maintaining a second portion of the coating layer remaining on the material layers, laterally etching the main body of the material layers exposed by removal of the coating layer, and selectively growing film layers on the exposed main body of the material layer.

Abstract translation: 本公开的实施例提供了用于形成用于半导体芯片的鳍式场效应晶体管（FinFET）的三维（3D）堆叠的所需材料的纳米线结构的方法。 在一个实例中，在衬底上形成纳米线结构的方法包括在衬底上的悬浮的纳米线结构中，悬浮的纳米线包括在悬浮的纳米线结构中重复形成间隔关系的多个材料层，其中材料层包括涂层 层涂覆在形成在材料层中的主体的外表面上，从材料层选择性地去除涂层的第一部分，以暴露材料层的下面的主体，同时保持涂层的第二部分保持在 材料层，横向蚀刻通过去除涂层而暴露的材料层的主体，以及选择性地在材料层的暴露的主体上生长膜层。