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138 条记录 (耗时 0.054 秒)

    Laser beam irradiation method
    23.
    发明授权
    Laser beam irradiation method 有权
    激光束照射法

    公开(公告)号：US06767799B2

    公开(公告)日：2004-07-27

    申请号：US10324051

    申请日：2002-12-20

    申请人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

    发明人： Akihisa Shimomura ,  Kenji Kasahara ,  Aiko Shiga ,  Hidekazu Miyairi ,  Koichiro Tanaka ,  Koji Dairiki

    IPC分类号： H01L2100

    CPC分类号： H01L21/02686 ,  H01L21/02683 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/6675 ,  H01L29/78672 ,  Y10S438/949

    摘要： A laser beam irradiation method that achieves uniform crystallization, even if a film thickness of an a-Si film or the like fluctuates, is provided. The present invention provides a laser beam irradiation method in which a non-single crystal semiconductor film is formed on a substrate having an insulating surface and a laser beam having a wavelength longer than 350 nm is irradiated to the non-single crystal semiconductor film, thus crystallizing the non-single crystal silicon film. The non-single crystal semiconductor film has a film thickness distribution within the surface of the substrate, and a differential coefficient of a laser beam absorptivity with respect to the film thickness of the non-single crystal semiconductor film is positive.

    摘要翻译： 即使a-Si膜的膜厚等发生波动，也能够实现均匀结晶化的激光束照射方法。 本发明提供一种激光束照射方法，其中在具有绝缘面的基板上形成非单晶半导体膜，并且将具有波长超过350nm的激光束照射到非单晶半导体膜上，因此 使非单晶硅膜结晶。 非单晶半导体膜在基板的表面内具有膜厚分布，并且相对于非单晶半导体膜的膜厚度的激光束吸收率的微分系数为正。

    Thin-film transistor and display device
    25.
    发明授权
    Thin-film transistor and display device 有权
    薄膜晶体管和显示器件

    公开(公告)号：US07786485B2

    公开(公告)日：2010-08-31

    申请号：US12390144

    申请日：2009-02-20

    申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

    发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

    IPC分类号： H01L27/14 ,  H01L29/04 ,  H01L29/15

    CPC分类号： H01L27/1214 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/458 ,  H01L29/4908 ,  H01L29/66765

    摘要： A thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions so as to be overlapped at least partly with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of conductive layers which is overlapped over the gate insulating layers at least partly with the gate electrode and the impurity semiconductor layers, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer which is in contact with the gate insulating layer and the pair of conductive layers and is extended between the pair of conductive layers.

    摘要翻译： 薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极区和漏极区，以至少部分地与栅电极重叠，栅极绝缘层介于 栅电极和杂质半导体层; 一对导电层，其至少部分地与所述栅电极和所述杂质半导体层重叠在所述栅极绝缘层上方，并且在沟道长度方向上设置有间隔; 以及与所述栅极绝缘层和所述一对导电层接触并在所述一对导电层之间延伸的非晶半导体层。

    Thin film transistor
    27.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08637866B2

    公开(公告)日：2014-01-28

    申请号：US12490447

    申请日：2009-06-24

    申请人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    发明人： Toshiyuki Isa ,  Yasuhiro Jinbo ,  Sachiaki Tezuka ,  Koji Dairiki ,  Hidekazu Miyairi ,  Shunpei Yamazaki ,  Takuya Hirohashi

    IPC分类号： H01L29/72

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78696

    摘要： A thin film transistor includes, as a buffer layer, a semiconductor layer which contains nitrogen and includes crystal regions in an amorphous structure between a gate insulating layer and source and drain regions, at least on the source and drain regions side. As compared to a thin film transistor in which an amorphous semiconductor is included in a channel formation region, on-current of a thin film transistor can be increased. In addition, as compared to a thin film transistor in which a microcrystalline semiconductor is included in a channel formation region, off-current of a thin film transistor can be reduced.

    摘要翻译： 至少在源区和漏区侧，薄膜晶体管包括作为缓冲层的半导体层，该半导体层含有氮并且包括在栅极绝缘层和源极和漏极区之间的非晶结构中的晶体区域。 与在沟道形成区域中包含非晶半导体的薄膜晶体管相比，可以提高薄膜晶体管的导通电流。 此外，与在沟道形成区域中包含微晶半导体的薄膜晶体管相比，可以减小薄膜晶体管的截止电流。

    Thin film transistor
    28.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08124972B2

    公开(公告)日：2012-02-28

    申请号：US12429486

    申请日：2009-04-24

    申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Shunpei Yamazaki ,  Takeyoshi Watabe

    发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Toshiyuki Isa ,  Akiharu Miyanaga ,  Takuya Hirohashi ,  Shunpei Yamazaki ,  Takeyoshi Watabe

    IPC分类号： H01L29/786

    CPC分类号： H01L27/127 ,  H01J37/32091 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678 ,  H01L29/78696

    摘要： The thin film transistor includes a gate insulating layer covering a gate electrode, over a substrate having an insulating surface; a semiconductor layer forming a channel formation region, in which a plurality of crystal regions is included in an amorphous structure; an impurity semiconductor layer imparting one conductivity type which forms a source region and a drain region; and a buffer layer formed from an amorphous semiconductor, which is located between the semiconductor layer and the impurity semiconductor layer. The thin film transistor includes the crystal region which includes minute crystal grains and inverted conical or inverted pyramidal grain each of which grows approximately radially from a position away from an interface between the gate insulating layer and the semiconductor layer toward a direction in which the semiconductor layer is deposited in a region which does not reach the impurity semiconductor layer.

    摘要翻译： 薄膜晶体管包括覆盖栅电极的栅极绝缘层，在具有绝缘表面的基板上; 形成在非晶结构中包含多个晶体区域的沟道形成区域的半导体层; 赋予形成源极区域和漏极区域的一种导电型的杂质半导体层; 以及由位于半导体层和杂质半导体层之间的非晶半导体形成的缓冲层。 薄膜晶体管包括晶体区域，其包括微小晶粒和倒锥形或倒棱锥晶粒，其每一个从远离栅极绝缘层和半导体层之间的界面的位置朝向半导体层的方向大致径向地生长 沉积在不到达杂质半导体层的区域中。

    Thin-film transistor and display device
    29.
    发明授权
    Thin-film transistor and display device 有权
    薄膜晶体管和显示器件

    公开(公告)号：US07812348B2

    公开(公告)日：2010-10-12

    申请号：US12390954

    申请日：2009-02-23

    申请人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

    发明人： Koji Dairiki ,  Hidekazu Miyairi ,  Yoshiyuki Kurokawa ,  Shunpei Yamazaki ,  Hiromichi Godo ,  Daisuke Kawae ,  Satoshi Kobayashi

    IPC分类号： H01L27/14

    CPC分类号： H01L29/78609 ,  H01L29/04 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669

    摘要： A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.

    摘要翻译： 解决了导通状态电流和截止电流的问题的薄膜晶体管，以及能够进行高速运转的薄膜晶体管。 薄膜晶体管包括一对杂质半导体层，其中添加赋予一种导电类型的杂质元素以形成源极和漏极区域，其间具有间隔，以便与具有栅极绝缘层的栅电极重叠 插入在栅电极和杂质半导体层之间; 添加作为受体的杂质元素的一对半导体层，与栅极电极和杂质半导体层重叠在栅极绝缘层上，并且在沟道长度方向上间隔设置; 以及与所述栅绝缘层和所述一对半导体层接触并在所述一对半导体层之间延伸的非晶半导体层。

    Thin film transistor
    30.
    发明授权
    Thin film transistor 有权
    薄膜晶体管

    公开(公告)号：US08168973B2

    公开(公告)日：2012-05-01

    申请号：US12467005

    申请日：2009-05-15

    申请人： Shunpei Yamazaki ,  Koji Dairiki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Takuya Hirohashi

    发明人： Shunpei Yamazaki ,  Koji Dairiki ,  Hidekazu Miyairi ,  Akiharu Miyanaga ,  Takuya Hirohashi

    IPC分类号： H01L29/786

    CPC分类号： H01L29/78696 ,  H01L27/1288 ,  H01L29/66765 ,  H01L29/78669

    摘要： The thin film transistor includes, over a substrate having an insulating surface, a gate insulating layer covering a gate electrode, an amorphous semiconductor layer over the gate insulating layer, a semiconductor layer including an impurity element imparting one conductivity type over the amorphous semiconductor layer. The amorphous semiconductor layer comprises an NH radical. Defects of the amorphous semiconductor layer are reduced by cross-linking dangling bonds with the NH radical in the amorphous semiconductor layer.

    摘要翻译： 薄膜晶体管包括在具有绝缘表面的衬底上，覆盖栅电极的栅极绝缘层，栅极绝缘层上的非晶半导体层，包括在非晶半导体层上赋予一种导电类型的杂质元素的半导体层。 非晶半导体层包含NH自由基。 通过与非晶半导体层中的NH自由基交联悬挂键来减少非晶半导体层的缺陷。