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公开(公告)号：US11737305B2
公开(公告)日：2023-08-22
申请号：US17260018
申请日：2020-05-27
Inventor： Wei Song , Ce Zhao , Yuankui Ding , Ming Wang , Ning Liu , Leilei Cheng , Junlin Peng , Yingbin Hu , Liusong Ni
IPC: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K101/30 , H10K102/10 , H10K102/00
CPC classification number: H10K50/818 , H10K71/00 , H10K50/813 , H10K59/12 , H10K2101/30 , H10K2102/103 , H10K2102/3026
Abstract: A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern.
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22.发明授权公开(公告)号：US11037801B2
公开(公告)日：2021-06-15
申请号：US16657062
申请日：2019-10-18
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingang Fang , Luke Ding , Jun Liu , Wei Li , Yang Zhang , Leilei Cheng , Dongfang Wang
IPC: H01L21/32 , H01L21/02 , H01L21/3213 , H01L21/027 , H01L21/28 , H01L21/285
Abstract: A fabrication method of a patterned metal film layer, including: sequentially depositing a first metal layer and a photoresist on a substrate; forming a first patterned photoresist in the photoresist retaining area; etching the first metal layer, and removing a part of the first metal layer having a first thickness and located in an edge area of the photoresist retaining area and in the photoresist removing area, to form a second metal layer; processing the first patterned photoresist to form a second patterned photoresist; etching and removing a part, which is not in contact with the second patterned photoresist, of the second metal layer on the substrate to form a patterned metal film layer.
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公开(公告)号：US10741767B2
公开(公告)日：2020-08-11
申请号：US15501286
申请日：2016-08-15
Applicant: BOE TECHNOLOGY GROUP CO., LTD
Inventor： Leilei Cheng
Abstract: In accordance with various embodiments of the disclosed subject matter, an organic thin film transistor, and a fabricating method thereof are provided. In some embodiments, the method for forming an organic thin film transistor (OTFT), comprising: forming a transparent gate layer on a transparent base substrate; forming a first initial silicone polymer layer on the transparent gate layer; and performing an oxidization process to partially oxidize the first initial silicone polymer layer to form a gate insulating layer, including an oxidized inorganic sub-layer that contacts the transparent gate layer, and a non-oxidized organic sub-layer.
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公开(公告)号：US10483497B2
公开(公告)日：2019-11-19
申请号：US15981324
申请日：2018-05-16
Inventor： Leilei Cheng
Abstract: Embodiments of the present disclosure provide an OLED substrate and a manufacturing method thereof and a display device. The OLED substrate includes: a base substrate; a first electrode and a second electrode which are on the base substrate; an organic material functional layer between the first electrode and the second electrode; and an auxiliary heat dissipation layer which is at a light exit side of the organic material functional layer and is in contact with the organic material functional layer. The auxiliary heat dissipation layer includes a metal heat dissipation portion and a metal oxide light transmission portion.
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25.发明授权公开(公告)号：US10256343B2
公开(公告)日：2019-04-09
申请号：US15311642
申请日：2016-03-01
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Leilei Cheng , Kai Xu , Guangcai Yuan
IPC: H01L29/786 , H01L21/288 , H01L29/49 , H01L29/51 , H01L27/12 , H01L21/02 , G02F1/1333 , G02F1/1362 , G02F1/1368
Abstract: The present disclosure discloses a thin film transistor, an array substrate and their manufacturing methods, and a display apparatus. The method for manufacturing the thin film transistor of the present disclosure comprises a step of forming an insulation layer, wherein the step of forming the insulation layer further comprises forming a siloxane material layer, oxidizing the siloxane material layer such that an inorganic silicon film is formed on a surface of the siloxane material layer, and curing the oxidized siloxane material layer to obtain the insulation layer. In this disclosure, the outer layer of the insulation layer is an inorganic silicon film which is a commonly-used material for making the insulation layer in prior art, and the inner layer of the insulation layer is made of the siloxane material having a low dielectric constant and high chemical stability.
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Patent Agency Ranking
26.发明申请公开(公告)号：US20190074306A1
公开(公告)日：2019-03-07
申请号：US16037159
申请日：2018-07-17
Inventor： Jun Liu , Yongchao Huang , Tongshang Su , Leilei Cheng , Jun Wang , Ning Liu
IPC: H01L27/12 , H01L21/768 , H01L21/308 , H01L21/311 , H01L21/3213
Abstract: A method for fabricating a contact hole of an array substrate, an array substrate and a display device are disclosed, the method includes: coating a topmost layer with a first photoresist coating, exposing but not developing a part of the first photoresist coating, corresponding to a first contact hole, in an exposure process; coating the first photoresist coating with a second photoresist coating, exposing a part of the second photoresist coating, corresponding to the first contact hole, in an exposure process; developing and removing exposed parts of the first and second photoresist coatings, wherein a size of a removed part of the second photoresist coating, corresponding to the first contact hole, is smaller than a size of a removed part of the first photoresist coating, corresponding to the first contact hole; and removing parts of functional film layers, corresponding to the first contact hole, to form the first contact hole.
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公开(公告)号：US10079352B2
公开(公告)日：2018-09-18
申请号：US15201790
申请日：2016-07-05
Inventor： Leilei Cheng , Yuankui Ding , Dongfang Wang , Ce Zhao
CPC classification number: H01L51/0097 , H01L27/3244 , H01L51/003 , H01L51/56 , H01L2227/323 , H01L2251/5338 , Y02E10/549 , Y02P70/521
Abstract: Embodiments of the present disclosure provide a manufacturing method for a flexible device and a flexible display device. The manufacturing method for a flexible device comprises: step S1, forming an organosiloxane layer on a supporting substrate; step S2, forming a flexible substrate on the organosiloxane layer; step S3, forming a display device on the flexible substrate; step S4, performing an oxidation treatment on a surface of the organosiloxane layer that contacts the supporting substrate such that a silicon dioxide layer is formed between the organosiloxane layer and the supporting substrate; and step S5, peeling off the supporting substrate from the silicon dioxide layer.
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公开(公告)号：US11930677B2
公开(公告)日：2024-03-12
申请号：US17329349
申请日：2021-05-25
Inventor： Yongchao Huang , Can Yuan , Liusong Ni , Chao Wang , Jiawen Song , Zhiwen Luo , Jun Liu , Leilei Cheng , Qinghe Wang , Tao Sun
IPC: H10K59/131 , H10K59/12 , H10K59/126 , H10K59/38 , H10K71/00
CPC classification number: H10K59/1315 , H10K59/126 , H10K59/38 , H10K71/00 , H10K59/1201
Abstract: A display panel and a fabricating method thereof, and a displaying device. The display panel includes a substrate, a resistance reducing trace, an inter-layer-medium layer and a signal line. The substrate is divided into a plurality of sub-pixel regions and a pixel separating region. The resistance reducing trace is provided on the pixel separating region of the substrate. The inter-layer-medium layer is provided on the substrate, and the inter-layer-medium layer has an opening exposing the resistance reducing trace. The signal line is provided within the opening, the signal line is connected to the resistance reducing trace, the signal line is distributed in a column direction along the display panel, and in a row direction along the display panel, a width of the opening is greater than or equal to a width of the signal line.
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公开(公告)号：US11537016B2
公开(公告)日：2022-12-27
申请号：US16964278
申请日：2019-12-13
Inventor： Leilei Cheng , Jingang Fang , Luke Ding , Jun Liu , Wei Li , Bin Zhou
IPC: G02F1/1333 , G02F1/1362 , H01L21/768 , H01L23/532 , H01L27/12
Abstract: A method of manufacturing an array substrate is provided, which comprises: forming a first metal layer and an insulating layer in sequence on a base substrate, the insulating layer covering the first metal layer; forming an etch barrier layer on the insulating layer; etching the etching barrier layer and the insulating layer multiple times, wherein an effective blocking area of the etching barrier layer decreases successively in each etching to form a connection hole penetrating the insulating layer, the connection hole includes a plurality of via holes connected in sequence, and a slope angle of a hole wall of each via hole is smaller than a preset slope angle; and forming a second metal layer, the second metal layer being connected to the first metal layer through the connection hole.
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公开(公告)号：US11462602B2
公开(公告)日：2022-10-04
申请号：US16905899
申请日：2020-06-18
Inventor： Yongchao Huang , Jun Cheng , Dongfang Wang , Jun Liu , Leilei Cheng , Liangchen Yan
Abstract: An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a first signal line on the base substrate; a first buffer layer provided on the base substrate and covering the first signal line; a second signal line on a side of the first buffer layer facing away from the base substrate; a first insulating layer provided on the base substrate and covering the second signal line; and a thin film transistor on a side of the first insulating layer facing away from the base substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode. A thickness of the first signal line is greater than that of the gate electrode, and a thickness of the second signal line is greater than that of the source electrode or the drain electrode.
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