公开(公告)号：US20240250178A1

公开(公告)日：2024-07-25

申请号：US18017649

申请日：2022-02-17

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Jiayu HE ,  Kun ZHAO ,  Yan QU ,  Liping LEI ,  Ce NING ,  Zhengliang LI ,  Hehe HU

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/7869 ,  H01L27/1225

Abstract: The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.

公开(公告)号：US20240215332A1

公开(公告)日：2024-06-27

申请号：US17908224

申请日：2021-11-04

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Fengjuan LIU ,  Wei LIU ,  Tianmin ZHOU ,  Kun ZHAO

IPC: H10K59/124 ,  H10K39/34 ,  H10K59/12

CPC classification number: H10K59/124 ,  H10K39/34 ,  H10K59/1201

Abstract: The present disclosure provides a display substrate and a preparation method thereof, and a display apparatus. The display substrate includes a circuit layer disposed on a base substrate, an emitting structure layer and a photoelectric structure layer disposed on a side of the circuit layer away from the base substrate, the circuit layer includes at least one impurity absorption layer and at least one transistor, the transistor includes an active layer, and at least one insulation layer is provided between the impurity absorption layer and the active layer; an atomic ratio of a silicon element to a nitrogen element in the impurity absorption layer is 1:5 to 1:35.

公开(公告)号：US20220223745A1

公开(公告)日：2022-07-14

申请号：US17761549

申请日：2021-05-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Zhi WANG ,  Feng GUAN

IPC: H01L29/786 ,  H01L29/417 ,  H01L29/06 ,  H01L29/66

Abstract: A thin film transistor, a manufacturing method thereof, a display substrate, and a display device are provided. The thin film transistor includes: a substrate, an active layer, a gate, a source and a drain. The active layer is arranged on the substrate and formed as a grid, including silicon nanowires extending along a first direction, the active layer includes source and drain regions oppositely arranged along the first direction, and a channel region located therebetween. The gate is arranged on the substrate, and an orthographic projection of the gate onto the substrate overlaps with orthographic projections for silicon nanowires in the channel region onto the substrate. The source and drain are arranged on the substrate, the source contacts silicon nanowires in the source region, and the drain contacts silicon nanowires in the drain region.

公开(公告)号：US20250098212A1

公开(公告)日：2025-03-20

申请号：US18963664

申请日：2024-11-28

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jie HUANG ,  Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Fengjuan LIU ,  Nianqi YAO ,  Kun ZHAO ,  Tianmin ZHOU ,  Jiushi WANG ,  Zhongpeng TIAN

IPC: H01L29/786 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/66

Abstract: The present disclosure relates to the field of display technologies, and in particular to a thin film transistor and a method for manufacturing the same, an array substrate and a display device. An active layer of the thin film transistor includes at least two metal oxide semi-conductor layers, the at least two metal oxide semi-conductor layers include a channel layer and a first protection layer, and metals in the channel layer include at least one of indium, gallium and zinc. Praseodymium is doped into the channel layer. And, in the channel layer, a number density of praseodymium atoms in the channel layer gradually decreases with a distance from the first protection layer.

公开(公告)号：US20240355978A1

公开(公告)日：2024-10-24

申请号：US18254210

申请日：2022-04-21

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Zhongpeng TIAN ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Jiayu HE ,  Feifei LI ,  Kun ZHAO ,  Yimin CHEN

IPC: H01L33/62 ,  G02F1/13357 ,  H05K3/46

CPC classification number: H01L33/62 ,  G02F1/133603 ,  H05K3/4688

Abstract: A circuit board includes a substrate and a stress neutral layer disposed on a side of the substrate. The stress neutral layer includes one or more first metal layers and one or more second metal layers. The one or more second metal layers and the one or more first metal layers are stacked. At least one of the one or more first metal layers is made of a material for generating a tensile stress, and at least one of the one or more second metal layers is made of a material for generating a compressive stress.

公开(公告)号：US20240329478A1

公开(公告)日：2024-10-03

申请号：US18638710

申请日：2024-04-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Guangcai YUAN ,  Hehe HU ,  Ce NING ,  Hui GUO ,  Fengjuan LIU ,  Dongfang WANG ,  Zhengliang LI ,  Jiayu HE

IPC: G02F1/1368 ,  G02F1/1362 ,  H01L27/12

CPC classification number: G02F1/1368 ,  G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F1/136295 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/1259

Abstract: An array substrate and a manufacturing method therefor, and a display apparatus are provided. The array substrate includes an underlay substrate, and at least one first transistor, at least one data line and at least one pixel electrode disposed on the underlay substrate. The at least one first transistor includes a first active layer and a first gate; the first gate is located on a side of the first active layer away from the underlay substrate, and orthographic projections of the first gate and the first active layer on the underlay substrate are at least partially overlapped. The first active layer is electrically connected to the data line and the pixel electrode, respectively. The data line is located on a side of the first active layer close to the underlay substrate, and the pixel electrode is located on a side of the first gate away from the underlay substrate.

公开(公告)号：US20240244747A1

公开(公告)日：2024-07-18

申请号：US17927576

申请日：2021-12-31

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Nianqi YAO ,  Feifei LI ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jiayu HE ,  Jie HUANG ,  Kun ZHAO ,  Zhanfeng CAO ,  Ke WANG

IPC: H05K1/11 ,  H01L23/498 ,  H01L33/62 ,  H05K1/09 ,  H05K1/18

CPC classification number: H05K1/111 ,  H01L23/49838 ,  H01L33/62 ,  H05K1/09 ,  H05K1/181 ,  H05K2201/0338 ,  H05K2201/10106 ,  H05K2201/10151

Abstract: A wiring board includes a base substrate and first connection pads disposed on the base substrate. The first connection pads each include electrical connection layer(s); each electrical connection layer includes a main material layer and protective layer(s) disposed on a side of the main material layer away from the base substrate; the protective layer(s) include a first reference protective layer, which is a protective layer farthest away from the base substrate in the protective layer(s); and a material of the main material layer includes copper. The electrical connection layer(s) includes a first electrical connection layer, which is an electrical connection layer farthest away from the base substrate in the electrical connection layer(s); and in protective layer(s) in the first electrical connection layer, at least a material of the first reference protective layer is capable of forming a first intermetallic compound with a first solder.

公开(公告)号：US20240194686A1

公开(公告)日：2024-06-13

申请号：US17908652

申请日：2021-10-25

Applicant: BOE Technology Group Co., Ltd.

Inventor： Nianqi YAO ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Shuilang DONG ,  Lizhong WANG ,  Dapeng XUE ,  Jiayu HE ,  Jie HUANG ,  Lubin SHI ,  Liping LEI

IPC: H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/1225 ,  H01L29/66742 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided is a thin film transistor and a method for manufacturing thereof, a display panel, and a display device, which relates to the field of display technologies. The thin film transistor includes an active layer, source and drain electrodes, and an oxygen supplementation layer. As an orthogonal projection of the oxygen supplementation layer on the base substrate is at least partially overlapped with an orthogonal projection of a target portion of the active layer on the base substrate, oxygen introduced in forming the oxygen supplementation layer in the thin film transistor is capable of diffusing to the target portion of the active layer, such that a defect in the target portion of the active layer is reduced, and a property of the thin film transistor is greater.

公开(公告)号：US20240186330A1

公开(公告)日：2024-06-06

申请号：US17786177

申请日：2021-08-26

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO ,  Kun ZHAO ,  Feifei LI ,  Liping LEI ,  Qi QI

IPC: H01L27/12

CPC classification number: H01L27/124

Abstract: Embodiments of the present disclosure provide an array substrate and a display apparatus. The array substrate includes: a base substrate; a conductive layer located on the base substrate, where a material of the conductive layer includes copper; and an oxidization protective layer, located on a side, facing away from the base substrate, of the conductive layer, where a material of the oxidization protective layer includes tungsten.

公开(公告)号：US20230122965A1

公开(公告)日：2023-04-20

申请号：US17784398

申请日：2021-06-03

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jiayu HE ,  Ce NING ,  Zhengliang LI ,  Hehe HU ,  Jie HUANG ,  Nianqi YAO

IPC: H10K59/126 ,  H10K59/131 ,  H10K71/60 ,  H10K59/13 ,  H10K59/121 ,  H01L27/12

Abstract: A display substrate includes: a base substrate; a metal light-shielding layer disposed on the base substrate; a plurality of pixel units disposed on the base substrate; a plurality of first thin film transistors disposed on the metal light-shielding layer and configured to drive the pixel units; a plurality of photodiodes disposed on the metal light-shielding layer and configured to convert light emitted from the pixel units into photocurrents, each of the photodiodes including a first electrode; a plurality of second thin film transistors disposed on the metal light-shielding layer and configured to receive the photocurrents, so that light emission of the pixel units are compensated according to the photocurrents. Output terminals of the first thin film transistors are electrically connected to the metal light-shielding layer, and a gate of the first thin film transistor is electrically connected to the first electrode. Further disclosed are a display panel and a display substrate manufacturing method.