公开(公告)号：US11927784B2

公开(公告)日：2024-03-12

申请号：US17483546

申请日：2021-09-23

Applicant: BOE Technology Group Co., Ltd.

Inventor： Caiyu Qu ,  Yanjun Hao ,  Huijuan Zhang ,  Xueyan Tian ,  Zheng Liu

IPC: G02B5/30 ,  G02F1/1335 ,  G02F1/1343

CPC classification number: G02B5/3058 ,  G02B5/3016 ,  G02F1/133528 ,  G02F1/133553 ,  G02F1/1343

Abstract: Provided is an anti-dazzling device, including a first electrode, a second electrode and a dimming structure, wherein the first electrode and the second electrode are disposed opposite to each other, and the dimming structure is disposed between the first electrode and the second electrode and is configured to change a light transmittance of the anti-dazzling device under action of voltage. An OLED display device and a method for manufacturing an anti-dazzling device are also provided.

公开(公告)号：US10545059B2

公开(公告)日：2020-01-28

申请号：US15535423

申请日：2016-08-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian

IPC: G01L9/08 ,  H01L41/04 ,  H01L41/047 ,  G01L1/16 ,  H01L41/113 ,  H01L41/187 ,  H01L41/29 ,  H01L41/312 ,  H01L41/333 ,  H01L41/335

Abstract: A piezoelectric element includes: a piezoelectric part; a first substrate and a second substrate, provided at both sides of the piezoelectric part, respectively; a first electrode layer, located between the first substrate and the piezoelectric part; and a second electrode layer, located between the electrode substrate and the piezoelectric part, wherein a surface of at least one of the first substrate and the second substrate close to the piezoelectric part is provided with a convex portion.

公开(公告)号：US20180219151A1

公开(公告)日：2018-08-02

申请号：US15567965

申请日：2017-03-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian

IPC: H01L41/113 ,  H01L41/193 ,  H01L41/047 ,  H01L41/27 ,  G01L1/16

CPC classification number: H01L41/1132 ,  G01L1/16 ,  H01L41/0471 ,  H01L41/081 ,  H01L41/193 ,  H01L41/27 ,  H01L41/311 ,  H01L51/0048 ,  H01L51/0508 ,  H01L51/0558 ,  H01L51/105

Abstract: The present disclosure discloses a piezoelectric sensor and a method for manufacturing the same to realize omni-directional pressure sensing. The piezoelectric sensor according to the present disclosure comprises a first electrode layer, a second electrode layer and a piezoelectric thin film layer between the first electrode layer and the second electrode layer, the piezoelectric sensor further comprising: a first functional module and a second functional module, both of which are connected to the second electrode layer, wherein the first functional module is configured to sense a pressure applied to the piezoelectric sensor in a first direction, and the second functional module is configured to sense a pressure applied to the piezoelectric sensor in a second direction, the first direction and the second direction are perpendicular to each other.

公开(公告)号：US10020194B2

公开(公告)日：2018-07-10

申请号：US14761998

申请日：2014-12-29

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xueyan Tian

IPC: H01L21/02 ,  H01L21/268 ,  B23K26/00 ,  H01L21/67 ,  H01L27/12 ,  B23K26/12 ,  B23K26/066

CPC classification number: H01L21/02686 ,  B23K26/0006 ,  B23K26/0622 ,  B23K26/066 ,  B23K26/127 ,  B23K26/352 ,  B23K2101/40 ,  B23K2103/56 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02675 ,  H01L21/02678 ,  H01L21/0268 ,  H01L21/02683 ,  H01L21/268 ,  H01L21/67115 ,  H01L27/1274 ,  H01L27/1285

Abstract: The invention relates to the field of laser annealing, and discloses a laser annealing device, a production process of a polycrystalline silicon thin film, and a polycrystalline silicon thin film produced by the same. The laser annealing device comprises an annealing chamber, in which a laser generator is provided, wherein an annealing window, through which the laser passes, and two light-cutting plates oppositely provided above the annealing window are also provided in the annealing chamber, wherein the light-cutting end face of each of the light-cutting plates is a wedge-shaped end face. In technical solutions of the invention, since the light-cutting end face is a wedge-shaped end face, the included angle formed by the reflected beam, which is formed by the reflection of the incident beam arriving at the light-cutting end face, and the ingoing beam, which passes through the annealing window, is relatively large, and the vibrating directions of them differ relatively greatly. Hence, the phenomenon of interference will hardly occur, and thus the interference mura generated on the polycrystalline silicon thin film due to the interference is reduced, the quality of the polycrystalline silicon thin film is improved, and the percent of pass of the product is also increased.

公开(公告)号：US09437417B2

公开(公告)日：2016-09-06

申请号：US14081833

申请日：2013-11-15

Applicant: Boe Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Chunping Long

IPC: H01L21/31 ,  H01L21/02 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L27/1281 ,  H01L21/02112 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02672 ,  H01L21/02686 ,  H01L27/1262 ,  H01L29/66757 ,  H01L29/78675

Abstract: A method for producing a low temperature polycrystalline silicon thin film, comprising steps of: providing a substrate; forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order; and performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film, wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate.

Abstract translation: 一种生产低温多晶硅薄膜的方法，包括以下步骤：提供基底; 在该基板上依次形成导热和电绝缘层，缓冲层和非晶硅层; 以及对所述非晶硅层进行高温处理和激光退火以将所述非晶硅层转换为多晶硅薄膜，其中所述导热和电绝缘层包括分布在所述基板上的规则图案。

公开(公告)号：US09349870B2

公开(公告)日：2016-05-24

申请号：US14365227

申请日：2013-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lei Wang ,  Xueyan Tian ,  Jang Soon Im

IPC: H01L21/20 ,  H01L29/786 ,  H01L21/02 ,  H01L29/49 ,  H01L29/66 ,  H01L27/12

CPC classification number: H01L29/78675 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606

Abstract: A method for forming low-temperature polysilicon thin film, a thin film transistor and a display device are provided. The method for forming low-temperature polysilicon thin film comprises: depositing an amorphous silicon thin film on a base substrate; covering the amorphous silicon thin film with an anti-reflective optical film; performing photolithography and etching on the anti-reflective optical film such that light condensing structures are provided in an array on the anti-reflective optical film; and irradiating the amorphous silicon thin film with the anti-reflective optical film covered by laser light such that the amorphous silicon film is converted into the low-temperature polysilicon thin film. The method may improve the grain size and uniformity of the low-temperature polysilicon thin film, make full use of the energy of the incident laser light, facilitate the reduction of the production cost of the low-temperature polysilicon thin film, and improve the performance of the low-temperature polysilicon thin film transistor.

Abstract translation: 提供了形成低温多晶硅薄膜，薄膜晶体管和显示装置的方法。 形成低温多晶硅薄膜的方法包括：在基底衬底上沉积非晶硅薄膜; 用抗反射光学膜覆盖非晶硅薄膜; 在抗反射光学膜上进行光刻和蚀刻，使得聚光结构以阵列形式提供在抗反射光学膜上; 并用由激光覆盖的抗反射光学膜照射非晶硅薄膜，使得非晶硅膜转变为低温多晶硅薄膜。 该方法可以提高低温多晶硅薄膜的晶粒尺寸和均匀性，充分利用入射激光的能量，有利于降低低温多晶硅薄膜的生产成本，提高性能 的低温多晶硅薄膜晶体管。

公开(公告)号：US20150194502A1

公开(公告)日：2015-07-09

申请号：US14349583

申请日：2013-10-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian

IPC: H01L29/66 ,  H01L27/32 ,  H01L21/02 ,  H01L29/04 ,  H01L21/324 ,  H01L29/786 ,  H01L21/268

CPC classification number: H01L29/6675 ,  H01L21/02164 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/324 ,  H01L27/1285 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78603 ,  H01L29/78672

Abstract: A method of manufacturing low temperature polysilicon is provided, comprising: depositing a buffer layer (20) on a base substrate (10); depositing an amorphous silicon layer (30) on the buffer layer; performing a heat treatment after forming the amorphous silicon layer; and dividing the amorphous silicon layer into a plurality of areas for laser annealing according to a thickness distribution of the amorphous silicon layer to form a polycrystalline silicon layer. A low temperature polysilicon film manufactured by the low temperature polysilicon manufacturing method and a thin film transistor having the film are also provided. The method realizes large grain size for polysilicons in each area of the amorphous silicon layer and a uniform distribution of polysilicon grain size across the entire substrate.

Abstract translation: 提供一种制造低温多晶硅的方法，包括：在基底（10）上沉积缓冲层（20）; 在所述缓冲层上沉积非晶硅层（30）; 在形成非晶硅层之后进行热处理; 根据非晶硅层的厚度分布，将非晶硅层分割为多个激光退火区域，形成多晶硅层。 还提供了通过低温多晶硅制造方法制造的低温多晶硅膜和具有该膜的薄膜晶体管。 该方法在非晶硅层的每个区域中对于多晶硅实现了大的晶粒尺寸，并且在整个衬底上均匀分布了多晶硅晶粒尺寸。

公开(公告)号：US20150091010A1

公开(公告)日：2015-04-02

申请号：US14365227

申请日：2013-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Lei Wang ,  Xueyan Tian ,  Jang Soon Im

IPC: H01L29/786 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L29/78675 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78606

Abstract: A method for forming low-temperature polysilicon thin film, a thin film transistor and a display device are provided. The method for forming low-temperature polysilicon thin film comprises: depositing an amorphous silicon thin film on a base substrate; covering the amorphous silicon thin film with an anti-reflective optical film; performing photolithography and etching on the anti-reflective optical film such that light condensing structures are provided in an array on the anti-reflective optical film; and irradiating the amorphous silicon thin film with the anti-reflective optical film covered by laser light such that the amorphous silicon film is converted into the low-temperature polysilicon thin film. The method may improve the grain size and uniformity of the low-temperature polysilicon thin film, make full use of the energy of the incident laser light, facilitate the reduction of the production cost of the low-temperature polysilicon thin film, and improve the performance of the low-temperature polysilicon thin film transistor.

Abstract translation: 提供了形成低温多晶硅薄膜，薄膜晶体管和显示装置的方法。 形成低温多晶硅薄膜的方法包括：在基底衬底上沉积非晶硅薄膜; 用抗反射光学膜覆盖非晶硅薄膜; 在抗反射光学膜上进行光刻和蚀刻，使得聚光结构以阵列形式提供在抗反射光学膜上; 并用由激光覆盖的抗反射光学膜照射非晶硅薄膜，使得非晶硅膜转变为低温多晶硅薄膜。 该方法可以提高低温多晶硅薄膜的晶粒尺寸和均匀性，充分利用入射激光的能量，有利于降低低温多晶硅薄膜的生产成本，提高性能 的低温多晶硅薄膜晶体管。

公开(公告)号：US20140065804A1

公开(公告)日：2014-03-06

申请号：US13980478

申请日：2012-12-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xueyan Tian ,  Chunping Long ,  Jiangfeng Yao

IPC: H01L21/02

CPC classification number: H01L21/02502 ,  C23C16/0272 ,  C23C16/24 ,  C23C16/56 ,  H01L21/0245 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02516 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02675 ,  H01L21/02686 ,  H01L21/268 ,  H01L21/32055

Abstract: An embodiment of the present invention relates to a low temperature polysilicon thin film and a manufacturing method thereof. The manufacturing method comprises: forming a buffer layer on a substrate (S11); forming a seed layer comprising a plurality of uniformly distributed crystal nuclei on the buffer layer by using a patterning process (S12); forming an amorphous silicon layer on the seed layer (S13); and performing an excimer laser annealing process on the amorphous silicon layer (S14).

Abstract translation: 本发明的实施例涉及一种低温多晶硅薄膜及其制造方法。 制造方法包括：在基板上形成缓冲层（S11）; 通过图案化工艺在缓冲层上形成包含多个均匀分布的晶核的晶种层（S12）; 在籽晶层上形成非晶硅层（S13）; 对非晶硅层进行准分子激光退火处理（S14）。

公开(公告)号：US12219834B2

公开(公告)日：2025-02-04

申请号：US17763659

申请日：2021-05-12

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xueyan Tian ,  Chengjie Qin ,  Jianchao Zhu ,  Dengyun Chen ,  Liangjian Li

IPC: H01L27/32 ,  H10K50/86 ,  H10K59/131 ,  H10K71/00 ,  H10K59/12

Abstract: A display substrate includes a display region and a binding region located on one side of the display region, the display region includes a display structure layer, a protective layer provided on the display structure layer and a reflective layer provided on the protective layer, and the display structure layer includes a drive structure layer, a light-emitting structure layer and an encapsulating structure layer stacked on a base; the binding region includes a binding structure layer, a protective layer provided on the binding structure layer at one side of the binding region close to the display region, and a reflective layer provided on the protective layer, and the binding structure layer includes a lead wire structure layer provided on the base, a binding pad provided on the lead wire structure layer and an inorganic encapsulating layer.