摘要:
A host comprises a host controller configured to receive a first call for a specified attribute for closed caption from an application program; and the host controller further configured to return a predefined value to the application program or to perform exception handling in response to the first call when the specified attribute for closed caption is not supported by the host. And, the host controller is further configured to receive a second call requesting an array of available attributes for closed caption from the application program and to return the array of available attributes to the application program in response to the second call. Also, the host controller is further configured to return an array of available attributes for closed caption to the application program in response to the first call when the specified attribute for closed caption is not supported by the host.
摘要:
Disclosed is a method for fabricating a transistor of a memory device capable of preventing voids from being created when forming a low-resistant gate electrode. The method includes the steps of forming an active area by etching a semiconductor substrate, forming a field oxide layer in the semiconductor substrate and forming a recess by etching the field oxide layer. A gate insulation layer is formed along an upper surface of the active area and an exposed portion of the active area. A gate electrode is formed on the field oxide layer such that the gate electrode extends across an upper portion of the active area while being overlapped with a channel area and the recess. The first conductive layer to be patterned has the same thickness, so the low-resistant gate electrode is easily fabricated without forming the voids.
摘要:
A memory device includes an active area protruding from a semiconductor substrate. A recess is formed in the active area. A field oxide layer is formed on the semiconductor substrate. A gate electrode extends across the active area while being overlapped with the recess. A gate insulation layer is interposed between the gate electrode and the active area. Source and drain areas are formed in the active area. The transistor structure above defines a recessed transistor structure if it is sectioned along a source-drain line and defines a Fin transistor structure if it is sectioned along a gate line. The transistor structure ensures sufficient data retention time and improves the current drivability while lowering the back bias dependency of a threshold voltage.
摘要:
A simplified method for forming a pad electrode without using an additional light-irradiation device is disclosed. The method includes forming a gate pad on a substrate, forming a gate insulating layer on a substrate surface, forming a data pad on the gate insulating layer, forming a passivation layer on the substrate surface, forming a first contact hole in the gate insulating layer and the passivation layer, forming a second contact hole in the passivation layer, coating a conductive photoresist on the substrate surface, and forming a gate pad electrode in the first contact hole and a data pad electrode in the second contact hole by ashing the conductive photoresist. The pad electrode is formed in a simple method of ashing the conductive photoresist, thereby decreasing costs.
摘要:
The present invention provides A method for preparing an electrode containing lithium nickel oxide wherein nickel has a single oxidation number, which comprises the following steps: a) preparing an electrode containing the lithium nickel oxide (LixNi1-yO, 0.4
摘要翻译:本发明提供一种制备含有镍氧化镍的电极的方法,其中镍具有单一氧化数,其包括以下步骤:a)制备含有锂镍氧化物(Li x Ni) 在导电基板上形成的1 sub> O,0.4
摘要:
Disclosed is a non-photosensitive black electrode composition and a plasma display panel having a black electrode formed using the composition. The black electrode for the plasma display panel includes the non-photosensitive composition, thus yellowing does not occur on electrodes but conductivity to a transparent electrode layer is desirably assured even though typical conductive powder and various types of black pigments are used. It is possible to conduct patterning using a photolithography process due to the simultaneous development of black and bus electrodes, which can act as electrodes due to simultaneous sintering. Since it is non-photosensitive, it is possible to use various types of black pigments, thus the material cost is reduced.
摘要:
In a plasma display panel, a space between a pair of sustain electrodes of a non-valid screen is different from a space between a pair of sustain electrodes of a valid screen. Accordingly, when discharges occur, impurities present inside the plasma display panel can be attached on the sustain electrodes of the non-valid screen, and thus, occurrence of an erroneous discharge at the valid screen can be prevented.
摘要:
Diamine compound containing specific triazine group, polyamic acid obtained by reacting the diamine compound and tetracarboxylic dianhydride, and liquid crystal alignment film obtained by coating and imidizing the polyamic acid. The liquid crystal alignment film has good heat-resistance, high transparency in visible light region and improved voltage holding ratio. Also, pretilt angle is easily controlled over broad range.
摘要:
In the liquid crystal display panel of a horizontal electric field type, a gate pattern includes a gate electrode provided at a substrate, a gate line connected to the gate electrode and a lower gate pad electrode connected to the gate line. A data line is disposed to cross the gate line and the common line, having a gate insulating film therebetween to thereby define a pixel area. A thin film transistor is positioned at each intersection between the gate line and the data line. A transparent electrode pattern includes a pixel electrode electrically connected to the thin film transistor and disposed such that at least a portion thereof is parallel to the common electrode. An opaque conductive pattern is disposed to overlap with the transparent electrode pattern.
摘要:
Disclosed is an electrochromic device comprising: (a) a first electrode; (b) a second electrode; (c) an electrochromic material; and (d) a gel polymer electrolyte containing an ionic liquid. A method for manufacturing the same is also disclosed. The electrochromic device uses a gel polymer electrolyte comprising an ionic liquid. Therefore, there is no problem related with electrolyte leakage. Additionally, it is possible to manufacture electrochromic devices by using plastic materials, because the ionic liquid gel polymer electrolyte permits structural deformation with ease. Further, because the electrochromic device uses an ionic liquid, it is possible to minimize side reactions between constitutional elements of an electrochromic device and electrolyte.