摘要:
A fast FET, a method and system for designing the fast FET and a design structure of the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
摘要:
An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.
摘要:
An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.
摘要:
Wafer-scale packaging structures and methods are provided for integrally packaging antenna structures with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems for millimeter wave (mmWave) and Terahertz (THz) applications. For example, a chip package includes an RFIC chip, an antenna structure and an interface layer. The RFIC chip includes a semiconductor substrate having an active surface and an inactive surface, and a BEOL (back end of line) structure formed on the active surface of the semiconductor substrate. The antenna structure includes an antenna substrate and a planar antenna radiator formed on a surface of the antenna substrate, wherein the antenna substrate is formed of a low loss semiconductor material. The interface layer connects the antenna structure to the BEOL structure of the RFIC chip.
摘要:
An exemplary differential track and hold amplifier includes a track stage including first and second linearized pairs connected in series at their respective inputs and in parallel at their respective outputs. The differential track and hold amplifier also includes a hold stage selectively coupled to the outputs of the first and second linearized pairs. The hold stage includes a unity gain buffer with feedback having a hold capacitor interconnected across its outputs. The differential track and hold amplifier also includes an output buffer coupled to the outputs of the hold stage. An exemplary analog-to-digital converter includes a differential track-and-hold amplifier, a voltage ladder, and a plurality of slices. Each of the slices in turn includes a differential preamplifier coupled to the track-and-hold amplifier and to a corresponding location on the voltage ladder; a current mode logic latch comparator coupled to the differential preamplifier; a large-swing latch coupled to the current mode logic latch comparator; a complementary metal oxide semiconductor latch having a dummy load; a calibration digital to analog converter connected across outputs of the differential preamplifier to inject calibration currents; and a register coupled to the calibration digital to analog converter and storing calibration values for use thereby. The analog-to-digital converter also includes a multiplexer which multiplexes outputs of the complementary metal oxide semiconductor latches down to a predetermined number of outputs.
摘要:
An electrical contact structure distributes current along a length thereof. The electrical contact structure includes a plurality of n metal rectangles on n levels of metal. The rectangle on one metal level is at least as wide in width and vertically covers in width the rectangle on the metal level immediately below. The rectangle on one metal level is shorter in length than and substantially aligned at a first end with the rectangle on the metal level immediately below. Rectangle first ends are substantially aligned. Features of an exemplary FET transistor of this invention are a source and drain terminal electrical contact structure, a multi-level metal ring connecting gate rectangles on both ends, and a wider-than-minimum gate-to-gate spacing. The invention is useful, for example, in an electromigration-compliant, high performance transistor.
摘要:
Systems and methods for providing power to a device under test are prcn ided. In some embodiments, systems for providing power to a device under test are provided, the systems comprising a power source for providing an alternating current, a probe having a probe inductor coupled to the power source; and a device under test having a device inductor magnetically coupled to the probe inductor, and having a circuit to be tested that receives power produced in the device inductor, In some embodiments, devices that receive power from a probe having an inductor that is coupled to an alternating current power source are provided, the devices comprising: a device inductor magnetically coupled to the probe inductor; and a circuit to be tested that receives power produced in the device inductor.
摘要:
Wafer-scale packaging structures and methods are provided for integrally packaging antenna structures with semiconductor RFIC (radio frequency integrated circuit) chips to form compact integrated radio/wireless communications systems for millimeter wave (mmWave) and Terahertz (THz) applications. For example, a chip package includes an RFIC chip, an antenna structure and an interface layer. The RFIC chip includes a semiconductor substrate having an active surface and an inactive surface, and a BEOL (back end of line) structure formed on the active surface of the semiconductor substrate. The antenna structure includes an antenna substrate and a planar antenna radiator formed on a surface of the antenna substrate, wherein the antenna substrate is formed of a low loss semiconductor material. The interface layer connects the antenna structure to the BEOL structure of the RFIC chip.
摘要:
An exemplary differential track and hold amplifier includes a track stage including first and second linearized pairs connected in series at their respective inputs and in parallel at their respective outputs. The differential track and hold amplifier also includes a hold stage selectively coupled to the outputs of the first and second linearized pairs. The hold stage includes a unity gain buffer with feedback having a hold capacitor interconnected across its outputs. The differential track and hold amplifier also includes an output buffer coupled to the outputs of the hold stage. An exemplary analog-to-digital converter includes a differential track-and-hold amplifier, a voltage ladder, and a plurality of slices. Each of the slices in turn includes a differential preamplifier coupled to the track-and-hold amplifier and to a corresponding location on the voltage ladder; a current mode logic latch comparator coupled to the differential preamplifier; a large-swing latch coupled to the current mode logic latch comparator; a complementary metal oxide semiconductor latch having a dummy load; a calibration digital to analog converter connected across outputs of the differential preamplifier to inject calibration currents; and a register coupled to the calibration digital to analog converter and storing calibration values for use thereby. The analog-to-digital converter also includes a multiplexer which multiplexes outputs of the complementary metal oxide semiconductor latches down to a predetermined number of outputs.