公开(公告)号：US07588867B2

公开(公告)日：2009-09-15

申请号：US11158271

申请日：2005-06-21

申请人： Frank-Michael Kamm ,  Rainer Pforr ,  Christian Crell

发明人： Frank-Michael Kamm ,  Rainer Pforr ,  Christian Crell

IPC分类号： G03F1/00 ,  H01L21/00

CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/70 ,  G21K2201/067

摘要： A reflection mask that includes a structure (20) for lithographically transferring a layout onto a target substrate, in particular for use in EUV lithography, and a reflective multilayer structure (11). At least one flare reduction layer (13′, 17) is at least partly arranged on a bright field of the multilayer structure (11).

摘要翻译： 一种反射掩模，其包括用于将布局平版印刷到目标基底上的结构（20），特别是用于EUV光刻中的反射掩模和反射多层结构（11）。 至少一个减光层（13'，17）至少部分地布置在多层结构（11）的明场上。

公开(公告)号：US20080042171A1

公开(公告)日：2008-02-21

申请号：US11506205

申请日：2006-08-18

申请人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

发明人： Sebastian Mosler ,  Mario Hennig ,  Karsten Zeiler ,  Thi Phuong Hoa Nguyen ,  Rainer Pforr ,  Jorg Thiele

IPC分类号： H01L29/76 ,  H01L21/8234 ,  H01L27/108 ,  H01L21/8242

CPC分类号： H01L27/088 ,  G03F1/30 ,  H01L27/0207 ,  H01L27/10885

摘要： Methods of forming transistor arrangements using alternating phase shift masks are provided. The mask may include two parallel opaque lines, a first transparent section separating the opaque lines and a second transparent section in the rest. The second transparent section may shift the phase with respect to the first transparent section by 180 degree. A phase conflict occurs along an edge between the first and the second transparent sections. A semiconductor substrate is patterned via the mask and, from the opaque lines functional active areas of a transistor pair and from the phase conflict edge, thereby resulting in a parasitic area. A separation gate is provided that is capable of switching off a parasitic transistor being formed within the parasitic area. Channel widths may be stabilized and maximized within dense transistor arrangements, for example, in a multiplexer portion of a sense amplifier arrangement for memory cell arrays.

摘要翻译： 提供了使用交替相移掩模形成晶体管布置的方法。 掩模可以包括两个平行的不透明线，分隔不透明线的第一透明部分和其余部分中的第二透明部分。 第二透明部分可以将相位相对于第一透明部分移位180度。 沿着第一和第二透明部分之间的边缘发生相位冲突。 通过掩模对半导体衬底进行图案化，并且从不透明线将晶体管对的功能有效区域和相冲突边缘图案化，由此导致寄生区域。 提供了一种能够关闭在寄生区域内形成的寄生晶体管的分离栅极。 通道宽度可以在致密晶体管布置中稳定和最大化，例如在用于存储单元阵列的读出放大器装置的多路复用器部分中。

公开(公告)号：US20070009816A1

公开(公告)日：2007-01-11

申请号：US11455286

申请日：2006-06-16

申请人： Rainer Pforr ,  Mario Hennig ,  Jens Reichelt ,  Thomas Muelders

发明人： Rainer Pforr ,  Mario Hennig ,  Jens Reichelt ,  Thomas Muelders

IPC分类号： G03F7/20

CPC分类号： G02B5/205 ,  G03F7/7015 ,  G03F7/70191 ,  G03F7/70625

摘要： A transparent optical element in a region between a photo mask and a light source of a photolithographic apparatus is provided having a plurality of attenuating elements being arranged in accordance with a first intensity correction function. The first intensity correction function is calculated from variations of characteristic feature size of structural elements of a resist pattern as compared to the nominal values of structural elements of a layout pattern. The variations of the characteristic feature size are divided into a first contribution being associated with the photolithographic apparatus and into a second contribution being associated with the photo mask.

摘要翻译： 提供了一种在光刻设备的光掩模和光源之间的区域中的透明光学元件，其具有根据第一强度校正功能布置的多个衰减元件。 与布局图案的结构元件的标称值相比，第一强度校正功能是根据抗蚀剂图案的结构元件的特征特征尺寸的变化计算的。 特征特征尺寸的变化被分为与光刻设备相关联的第一贡献和与光掩模相关联的第二贡献。

公开(公告)号：US20050069790A1

公开(公告)日：2005-03-31

申请号：US10952885

申请日：2004-09-30

申请人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

发明人： Stefan Gruss ,  Detlef Hofmann ,  Rainer Pforr ,  Mario Hennig ,  Guido Thielscher ,  Hans-Georg Froehlich

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L23/544 ,  G03C5/00

CPC分类号： G03F9/7084 ,  G03F7/70633 ,  G03F9/7076 ,  H01L23/544 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2223/54466 ,  H01L2924/0002 ,  Y10S430/143 ,  H01L2924/00

摘要： A method for reducing an overlay error of structures of a layer to be patterned relative to those of a reference layer includes formation of standard measurement marks assigned to one another in the two layers for determining an overlay error and for setting up further measurement marks for determining an additional optical imaging error of the projection system at least in the current layer. The further measurement marks have a geometry adapted to the geometry of selected structures of the circuit patterns to be transferred by projection from masks onto semiconductor substrates. An imaging error affects circuit structures and further measurement marks in the same way. An alignment correction for a subsequent exposure can be calculated from the measured positional deviations between the two standard measurement marks and between the standard measurement mark and the further measurement mark of the layer currently to be patterned.

摘要翻译： 用于减少要被图案化的层的结构相对于参考层的结构的覆盖误差的方法包括形成在两层中彼此分配的标准测量标记，以确定重叠误差并设置用于确定的另外的测量标记 至少在当前层中投影系统的附加光学成像误差。 另外的测量标记具有适于通过从掩模投影到半导体衬底上将要传送的电路图案的选定结构的几何形状的几何形状。 成像误差以同样的方式影响电路结构和进一步的测量标记。 可以从测量的两个标准测量标记之间的位置偏差和标准测量标记与当前要构图的层的另一测量标记之间的测量位置偏差来计算后续曝光的对准校正。

公开(公告)号：US10157804B2

公开(公告)日：2018-12-18

申请号：US14232097

申请日：2012-07-20

申请人： Rainer Pforr

发明人： Rainer Pforr

IPC分类号： G03F1/84 ,  G03F7/20 ,  H01L21/66

摘要： The invention relates to a method for determining a critical dimension variation of a photolithographic mask which comprises (a) using layout data of the photolithographic mask to determine at least two sub-areas of the photolithographic mask, each sub-area comprising a group of features, (b) measuring a distribution of a transmission of each sub-area, (c) determining a deviation of the transmission from a mean transmission value for each sub-area, (d) determining a constant specific for each sub-area, and (e) determining the critical dimension variation of the photolithographic mask by combining for each sub-area the deviation of the transmission and the sub-area specific constant.

公开(公告)号：US20090244502A1

公开(公告)日：2009-10-01

申请号：US12056060

申请日：2008-03-26

申请人： Bernd Kuechler ,  Rainer Pforr ,  Thomas Muelders

发明人： Bernd Kuechler ,  Rainer Pforr ,  Thomas Muelders

IPC分类号： G03B27/52 ,  G03F7/26 ,  G03F1/14

CPC分类号： G03F7/70891 ,  G03F1/36 ,  G03F1/50 ,  G03F7/70433

摘要： Embodiments relate to compensating for lens heating, lithographic projection system and photo mask. Accordingly, lens heating is compensated by providing a layout pattern including a regular pattern being arranged substantially symmetrical in a first region and a sub-resolution pattern including a plurality of sub-resolution structural elements, wherein the sub-resolution pattern in a second region, so as to minimize non-homogenous lens heating of a projection apparatus in case of a lithographic projection.

摘要翻译： 实施例涉及补偿透镜加热，光刻投影系统和光掩模。 因此，通过提供包括在第一区域中基本对称布置的规则图案和包括多个子分辨率结构元件的子分辨率图案的布局图案来补偿透镜加热，其中在第二区域中的子分辨率图案， 以便在光刻投影的情况下使投影装置的非均匀透镜加热最小化。

公开(公告)号：US07489386B2

公开(公告)日：2009-02-10

申请号：US11743870

申请日：2007-05-03

申请人： Frank-Michael Kamm ,  Rainer Pforr

发明人： Frank-Michael Kamm ,  Rainer Pforr

IPC分类号： G03B27/54 ,  G03B27/52

CPC分类号： G03F7/70308 ,  G03F7/70233

摘要： A system for projecting a pattern from a mask onto a substrate comprises a radiation source for emitting a light beam in the extreme ultraviolet wavelength range, a mask including absorbent and reflective structures forming the pattern, a collector mirror and an illumination optical system forming a first part of a beam path in order to direct the light beam onto the mask to produce a patterned light beam, a projection optical system including an arrangement of reflective mirrors forming a second part of the beam path in order to focus the reflected light beam from the mask onto the substrate, and an optical element arranged in the beam path and including at least two regions having different degrees of reflection or transmission. First and second of the regions are assigned to respective different first and second positions on the mask and/or collector mirror in accordance with the beam path.

摘要翻译： 用于将图案从掩模投影到基板上的系统包括用于发射极紫外波长范围内的光束的辐射源，包括吸收体的掩模和形成图案的反射结构，集光镜和照明光学系统，形成第一 光束路径的一部分，以将光束引导到掩模上以产生图案化的光束;投影光学系统，包括形成光束路径的第二部分的反射镜的布置，以便聚焦来自 掩模到基板上，以及布置在光束路径中并且包括具有不同反射或透射程度的至少两个区域的光学元件。 第一和第二区域根据光束路径被分配到掩模和/或收集器反射镜上的相应不同的第一和第二位置。

公开(公告)号：US20070263198A1

公开(公告)日：2007-11-15

申请号：US11743870

申请日：2007-05-03

申请人： Frank-Michael Kamm ,  Rainer Pforr

发明人： Frank-Michael Kamm ,  Rainer Pforr

IPC分类号： G03B27/54

CPC分类号： G03F7/70308 ,  G03F7/70233

摘要： A system for projecting a pattern from a mask onto a substrate comprises a radiation source for emitting a light beam in the extreme ultraviolet wavelength range, a mask including absorbent and reflective structures forming the pattern, a collector mirror and an illumination optical system forming a first part of a beam path in order to direct the light beam onto the mask to produce a patterned light beam, a projection optical system including an arrangement of reflective mirrors forming a second part of the beam path in order to focus the reflected light beam from the mask onto the substrate, and an optical element arranged in the beam path and including at least two regions having different degrees of reflection or transmission. First and second of the regions are assigned to respective different first and second positions on the mask and/or collector mirror in accordance with the beam path.

摘要翻译： 用于将图案从掩模投影到基板上的系统包括用于发射极紫外波长范围内的光束的辐射源，包括吸收体的掩模和形成图案的反射结构，集光镜和照明光学系统，形成第一 光束路径的一部分，以将光束引导到掩模上以产生图案化的光束;投影光学系统，包括形成光束路径的第二部分的反射镜的布置，以便聚焦来自 掩模到基板上，以及布置在光束路径中并且包括具有不同反射或透射程度的至少两个区域的光学元件。 第一和第二区域根据光束路径被分配到掩模和/或收集器反射镜上的相应不同的第一和第二位置。

公开(公告)号：US20070229790A1

公开(公告)日：2007-10-04

申请号：US11728181

申请日：2007-03-23

申请人： Bernd Kuechler ,  Thomas Muelders ,  Rainer Pforr ,  Joerg Tschischgale

发明人： Bernd Kuechler ,  Thomas Muelders ,  Rainer Pforr ,  Joerg Tschischgale

IPC分类号： G03F7/20 ,  G03B27/42

CPC分类号： G03F7/70308 ,  G03F7/70283

摘要： An arrangement for the transfer of structural elements of a photomask onto a substrate includes an illumination device, a photomask with a plurality of structural elements, wherein radiation from the illumination device transfers the structural elements of the photomask onto a photoresist placed on a substrate, and an optical element, wherein the optical element produces a local variation in the degree of transmission of the radiation.

摘要翻译： 用于将光掩模的结构元件转移到基板上的布置包括照明装置，具有多个结构元件的光掩模，其中来自照明装置的辐射将光掩模的结构元件转移到放置在基板上的光致抗蚀剂上，以及 光学元件，其中所述光学元件产生所述辐射的透射程度的局部变化。

公开(公告)号：US06692875B2

公开(公告)日：2004-02-17

申请号：US09839764

申请日：2001-04-20

申请人： Werner Fischer ,  Fritz Gans ,  Rainer Pforr ,  Jörg Thiele

发明人： Werner Fischer ,  Fritz Gans ,  Rainer Pforr ,  Jörg Thiele

IPC分类号： G03F900

CPC分类号： G03F1/32 ,  G03F1/30 ,  G03F1/36

摘要： A mask contains a transparent carrier material on which an opaque region is disposed as an image structure. Also disposed on the carrier material is a semitransparent dummy structure, which is spaced apart from all the image structures and differs from the image structure in terms of transparency and phase rotation. The smallest lateral extent of the dummy structure is then selected to be at least half as large as the smallest lateral extent of the image structure. The semitransparent dummy structure is formed in such a way that it is suitable for increasing the depth of focus of structures that stand individually or at least partially individually, in order thereby to improve the process window of the optical projection.

摘要翻译： 掩模包含作为图像结构设置有不透明区域的透明载体材料。 还设置在载体材料上的是半透明虚拟结构，其与所有图像结构间隔开，并且在透明度和相位旋转方面与图像结构不同。 然后将虚拟结构的最小横向范围选择为图像结构的最小横向范围的至少一半。 半透明虚拟结构形成为适于增加独立地或至少部分地单独地固定的结构的焦点深度，从而改善光学投影的处理窗口。