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199 条记录 (耗时 0.026 秒)

    Method of planarization
    24.
    发明授权
    Method of planarization 有权
    平面化方法

    公开(公告)号：US06609954B1

    公开(公告)日：2003-08-26

    申请号：US09182968

    申请日：1998-10-29

    申请人： Ming-Sheng Yang ,  Kuen-Jian Chen ,  Juan-Yuan Wu ,  Water Lur

    发明人： Ming-Sheng Yang ,  Kuen-Jian Chen ,  Juan-Yuan Wu ,  Water Lur

    IPC分类号： B24B100

    CPC分类号： B24B37/042 ,  B24B57/02 ,  H01L21/31053 ,  H01L21/3212

    摘要： A polarization method that utilizes a chemical-mechanical polishing operation. In the polishing operation, slurry for polishing a metallic layer is first employed to remove a greater portion of the metallic layer. Next, slurry for polishing a dielectric layer and having properties very similar to the metal-polishing slurry is added and mixed together with the slurry for polishing a metallic layer so that the polishing rate for the dielectric layer is increased. Consequently, metallic residues remaining on the dielectric layer are removed and a planar dielectric layer is obtained at the same time.

    摘要翻译： 利用化学机械抛光操作的极化方法。 在抛光操作中，首先使用用于抛光金属层的浆料去除大部分金属层。 接下来，添加用于抛光电介质层并且具有与金属抛光浆料非常相似的性质的浆料，并与用于抛光金属层的浆料混合在一起，使得电介质层的抛光速率增加。 因此，除去残留在电介质层上的金属残留物，同时获得平面介电层。

    Chemical mechanical polishing methods using low pH slurry mixtures
    25.
    发明授权
    Chemical mechanical polishing methods using low pH slurry mixtures 失效

    公开(公告)号：US06362101B1

    公开(公告)日：2002-03-26

    申请号：US08976605

    申请日：1997-11-24

    申请人： Ming-Sheng Yang ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

    发明人： Ming-Sheng Yang ,  Juan-Yuan Wu ,  Water Lur ,  Shih-Wei Sun

    IPC分类号： H01L21302

    摘要： A method for chemical mechanical polishing a component includes providing an oxide layer and forming at least one via through the oxide layer. A tungsten layer is formed within the via and over the oxide layer. A first chemical mechanical polishing step is carried out on a polishing pad using a first slurry having an oxidizing component and having a pH of approximately 2 to approximately 4 to remove the tungsten layer from over the oxide layer. A second chemical mechanical polishing step is carried out on the polishing pad using a second slurry having a pH of approximately 2 to approximately 4 to polish scratches out of the oxide layer.

    Method of applying partial reverse mask
    26.
    发明授权
    Method of applying partial reverse mask 有权
    应用部分反面罩的方法

    公开(公告)号：US06271118B1

    公开(公告)日：2001-08-07

    申请号：US09241843

    申请日：1999-02-01

    申请人： Juan-Yuan Wu ,  Water Lur

    发明人： Juan-Yuan Wu ,  Water Lur

    IPC分类号： H01L214763

    CPC分类号： H01L21/76885 ,  H01L21/76801 ,  H01L21/76819

    摘要： A method is described. A substrate is provided. A first conductive layer with a first width and a second conductive layer with a second width are formed on the substrate. Photolithography and etching processes are performed on the dielectric layer to at least expose a first region of the first conductive layer and a second region of the second conductive layer. An oxide layer is then formed over the dielectric layer and the exposed first and second conductive layers. The method of applying partial reverse mask is able to resolve the adhesion problem of the dielectric layer with low dielectric constant.

    摘要翻译： 描述了一种方法。 提供基板。 具有第一宽度的第一导电层和具有第二宽度的第二导电层形成在衬底上。 在电介质层上进行光刻和蚀刻工艺，以至少暴露第一导电层的第一区域和第二导电层的第二区域。 然后在电介质层和暴露的第一和第二导电层上形成氧化物层。 应用局部反掩模的方法能够解决低介电常数介电层的粘附问题。

    Method of forming capacitor with a HSG layer
    27.
    发明授权
    Method of forming capacitor with a HSG layer 有权
    用HSG层形成电容器的方法

    公开(公告)号：US06180451B2

    公开(公告)日：2001-01-30

    申请号：US09165143

    申请日：1998-10-01

    申请人： Wen-Yi Hsieh ,  Juan-Yuan Wu ,  Water Lur

    发明人： Wen-Yi Hsieh ,  Juan-Yuan Wu ,  Water Lur

    IPC分类号： H01L218242

    CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/2022 ,  H01L27/10852 ,  H01L28/84

    摘要： A method of forming a DRAM capacitor. A hemispherical grain structure is formed on the surface of the bottom electrode of the capacitor. By employing an additional annealing under a dopant contained ambient, the dopant is diffused into the hemispherical grain structure and distributed at the surface area of the hemispherical grain region.

    摘要翻译： 一种形成DRAM电容器的方法。 在电容器的底部电极的表面上形成半球形晶粒结构。 通过在包含环境的掺杂剂下进行额外的退火，掺杂剂扩散到半球形晶粒结构中并分布在半球形晶粒区域的表面区域。

    Method for fabricating a capacitor
    28.
    发明授权
    Method for fabricating a capacitor 有权
    制造电容器的方法

    公开(公告)号：US06171899B2

    公开(公告)日：2001-01-09

    申请号：US09267535

    申请日：1999-03-12

    申请人： Fu-Tai Liou ,  Water Lur ,  Kuan-Cheng Su ,  Juan-Yuan Wu

    发明人： Fu-Tai Liou ,  Water Lur ,  Kuan-Cheng Su ,  Juan-Yuan Wu

    IPC分类号： H01L218242

    CPC分类号： H01L28/60 ,  H01L21/76838

    摘要： A method for fabricating a capacitor. A first metal layer is formed on a provided substrate. A dielectric film is formed on the first metal layer. The dielectric film can be a mono-layer structure or a multi-layer structure comprising various dielectric materials. A rapid thermal process (RTP), such as a rapid thermal annealing, or a plasma treatment is performed to enhance the quality of the dielectric film. A photolithography and etching process is performed to remove a part of the dielectric film and the first metal layer to expose a part of the inter-layer dielectric layer. The remaining first conductive layer is used as a lower electrode. A conventional interconnect process is performed on the exposed inter-layer dielectric layer and on the dielectric film. For example, a glue layer is formed on the exposed inter-layer dielectric layer and on the dielectric film. A second metal layer is formed on the glue layer. A photolithography and etching process is performed to remove a part of the second conductive layer. The second metal layer remaining on the inter-layer dielectric layer is used as a wiring line for interconnection. The glue layer remaining on the dielectric film is used as an upper electrode.

    摘要翻译： 一种制造电容器的方法。 在所提供的基板上形成第一金属层。 在第一金属层上形成电介质膜。 电介质膜可以是单层结构或包括各种介电材料的多层结构。 进行快速热处理（RTP），例如快速热退火或等离子体处理，以提高电介质膜的质量。 进行光刻和蚀刻处理以去除电介质膜和第一金属层的一部分以暴露层间电介质层的一部分。 剩余的第一导电层用作下电极。 在暴露的层间电介质层和电介质膜上进行常规的互连工艺。 例如，在暴露的层间电介质层和电介质膜上形成胶层。 第二金属层形成在胶层上。 执行光刻和蚀刻工艺以去除第二导电层的一部分。 残留在层间电介质层上的第二金属层用作互连布线。 残留在电介质膜上的胶层用作上电极。

    Method for improving non-uniformity of chemical mechanical polishing by over coating
    29.
    发明授权
    Method for improving non-uniformity of chemical mechanical polishing by over coating 有权
    通过过涂层改善化学机械抛光不均匀的方法

    公开(公告)号：US06344408B1

    公开(公告)日：2002-02-05

    申请号：US09296177

    申请日：1999-04-22

    申请人： Hsueh-Chung Chen ,  Ming-Sheng Yang ,  Juan-Yuan Wu ,  Water Lur

    发明人： Hsueh-Chung Chen ,  Ming-Sheng Yang ,  Juan-Yuan Wu ,  Water Lur

    IPC分类号： H01L214763

    CPC分类号： H01L21/3212

    摘要： A method for improving non-uniformity of chemical mechanical polishing by over coating layer is disclosed. The essential point of the invention is that an over coating layer is formed over a surface before the surface is planarized by a chemical mechanical polishing process. Note that polishing rate of the over coating layer must be less than the polishing rate of the surface, where the ratio of polishing rate is called as selectivity. Because the topography of the surface is not uniform, the topography of the over coating layer also is non-uniform and then the polishing probability in different parts of the over coating layer is different. Obviously, when the over coating layer on the higher area part of the surface is totally consumed, these are residual over coating layer on the lower area part of the surface. Thus, over polishing in the lower area part is prevented by residual over coating layer. Before total over coating layer is polished, the polished account of the surface is higher in the high area part and is lower in the lower area part. Thus, uniformity of the surface is enhanced. Moreover, enhancement of uniformity is direct proportional to product of selectivity and depth of over coating layer.

    摘要翻译： 公开了一种通过过涂层改善化学机械抛光不均匀性的方法。 本发明的要点在于，在通过化学机械抛光工艺对表面进行平面化之前，在表面上形成过涂覆层。 注意，涂层的抛光速率必须小于抛光速率比被称为选择性的表面的抛光速率。 由于表面的形貌不均匀，外涂层的形貌也不均匀，在外涂层不同部位的抛光概率不同。 显然，当表面的较高区域部分上的过涂层完全消耗时，这些是在表面的下部区域上的残留涂层。 因此，通过残留的覆盖层来防止在下部区域部分的过度抛光。 在完全涂覆层被抛光之前，表面的抛光量在高面积部分较高，下部区域较低。 因此，表面的均匀性增强。 此外，均匀性的增强与涂层的选择性和深度的乘积成正比。

    Method of fabricating dual damascene structure
    30.
    发明授权
    Method of fabricating dual damascene structure 有权
    双镶嵌结构的制作方法

    公开(公告)号：US06313028B2

    公开(公告)日：2001-11-06

    申请号：US09280892

    申请日：1999-03-29

    申请人： Chao-Yuan Huang ,  Juan-Yuan Wu ,  Water Lur

    发明人： Chao-Yuan Huang ,  Juan-Yuan Wu ,  Water Lur

    IPC分类号： H01L2144

    CPC分类号： H01L21/76879 ,  H01L21/76807 ,  H01L21/7684

    摘要： A method of fabricating a dual damascene is provided. A dielectric layer is formed on a substrate. A diffusion barrier layer is formed on the dielectric layer. A portion of the diffusion barrier layer and the dielectric layer is removed to form a trench and a via hole. A barrier layer is formed on the diffusion barrier layer and in the trench and the via hole. The barrier layer on the diffusion barrier layer is removed by chemical-mechanical polishing. A conductive layer is formed in the trench and the via hole by selective deposition. A planarization step is performed with the diffusion barrier layer serving as a stop layer.

    摘要翻译： 提供了一种制造双镶嵌的方法。 在基板上形成电介质层。 在电介质层上形成扩散阻挡层。 去除扩散阻挡层和电介质层的一部分以形成沟槽和通孔。 阻挡层形成在扩散阻挡层上，沟槽和通孔中。 通过化学机械抛光去除扩散阻挡层上的阻挡层。 通过选择性沉积在沟槽和通孔中形成导电层。 在扩散阻挡层用作停止层的情况下进行平坦化步骤。