利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

41 条记录 (耗时 0.047 秒)

    Partial-via-first dual-damascene process with tri-layer resist approach
    21.
    发明申请
    Partial-via-first dual-damascene process with tri-layer resist approach 审中-公开
    具有三层抗蚀剂方法的部分通过第一双镶嵌工艺

    公开(公告)号：US20070134917A1

    公开(公告)日：2007-06-14

    申请号：US11301917

    申请日：2005-12-13

    申请人： Tsai-Chun Li ,  Tsang-Jiuh Wu ,  Hui Ouyang

    发明人： Tsai-Chun Li ,  Tsang-Jiuh Wu ,  Hui Ouyang

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76808 ,  H01L21/7681 ,  H01L21/76813

    摘要： A partial-via-first dual-damascene method using a tri-layer resist method forms a first via hole through partial thickness of a dielectric layer, and forms a tri-layer resist structure on the dielectric layer to fill the first via hole with the bottom photoresist layer. A dry development process is performed to transfer a first opening on the top photoresist layer to the middle layer and the bottom photoresist layer, and expose the first via hole again, and remove the top photoresist layer. A dry etching process is then performed to form a second via hole under the first via hole and a trench over the second via hole. Finally a wet striping process is used to remove the remainder of the photoresist layer.

    摘要翻译： 使用三层抗蚀剂法的部分通孔 - 第一双镶嵌法通过介电层的部分厚度形成第一通孔，并在介电层上形成三层抗蚀剂结构，以填充第一通孔 底部光刻胶层。 进行干式显影处理以将顶部光致抗蚀剂层上的第一开口转移到中间层和底部光致抗蚀剂层，并再次暴露第一通孔，并除去顶部光致抗蚀剂层。 然后执行干蚀刻工艺以在第一通孔下方形成第二通孔，并在第二通孔上形成沟槽。 最后，使用湿条纹工艺去除光致抗蚀剂层的其余部分。

    Method of manufacturing integrated circuit device with well controlled surface proximity
    24.
    发明授权
    Method of manufacturing integrated circuit device with well controlled surface proximity 有权
    具有良好控制表面接近性的集成电路器件的制造方法

    公开(公告)号：US08216906B2

    公开(公告)日：2012-07-10

    申请号：US12827344

    申请日：2010-06-30

    申请人： Ming-Huan Tsai ,  Hui Ouyang ,  Chun-Fai Cheng ,  Wei-Han Fan

    发明人： Ming-Huan Tsai ,  Hui Ouyang ,  Chun-Fai Cheng ,  Wei-Han Fan

    IPC分类号： H01L21/336

    CPC分类号： H01L21/823807 ,  H01L21/02433 ,  H01L21/02639 ,  H01L21/823814 ,  H01L29/7848

    摘要： An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit device. In an embodiment, the method achieves improved control by forming a lightly doped source and drain (LDD) region that acts as an etch stop. The LDD region may act as an etch stop during an etching process implemented to form a recess in the substrate that defines a source and drain region of the device.

    摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法提供对集成电路器件的表面接近度和尖端深度的改进的控制。 在一个实施例中，该方法通过形成用作蚀刻停止的轻掺杂源极和漏极（LDD）区域来实现改进的控制。 LDD区域可以在蚀刻工艺期间用作蚀刻停止层，以在衬底中形成限定器件的源极和漏极区域的凹陷。

    INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AND METHOD OF MANUFACTURING SAME
    25.
    发明申请
    INTEGRATED CIRCUIT DEVICE WITH WELL CONTROLLED SURFACE PROXIMITY AND METHOD OF MANUFACTURING SAME 有权
    具有良好控制的表面接近度的集成电路装置及其制造方法

    公开(公告)号：US20120273847A1

    公开(公告)日：2012-11-01

    申请号：US13543943

    申请日：2012-07-09

    申请人： Ming-Huan Tsai ,  Hui Ouyang ,  Chun-Fai Cheng ,  Wei-Han Fan

    发明人： Ming-Huan Tsai ,  Hui Ouyang ,  Chun-Fai Cheng ,  Wei-Han Fan

    IPC分类号： H01L27/085

    CPC分类号： H01L21/823807 ,  H01L21/02433 ,  H01L21/02639 ,  H01L21/823814 ,  H01L29/7848

    摘要： An integrated circuit device and method for manufacturing the integrated circuit device is disclosed. The disclosed method provides improved control over a surface proximity and tip depth of integrated circuit devices. An exemplary integrated circuit device achieved by the method has a surface proximity of about 1 nm to about 3 nm and a tip depth of about 5 nm to about 10 nm. The integrated circuit device having such surface proximity and tip depth includes an epi source feature and an epi drain feature defined by a first facet and a second facet of a substrate in a first direction, such as a {111} crystallographic plane of the substrate, and a third facet of the substrate in a second direction, such as a { 100} crystallographic plane of the substrate.

    摘要翻译： 公开了一种用于制造集成电路器件的集成电路器件和方法。 所公开的方法提供对集成电路器件的表面接近度和尖端深度的改进的控制。 通过该方法实现的示例性集成电路器件具有约1nm至约3nm的表面接近度和约5nm至约10nm的尖端深度。 具有这种表面接近度和尖端深度的集成电路器件包括由第一方向（例如衬底的{111}晶体平面）的第一方向上的第一面和第二小面限定的外延源特征和外延漏极特征， 以及在第二方向上的衬底的第三面，例如衬底的{100}晶面。

    Flexible Authorization Model for Secure Search
    27.
    发明申请
    Flexible Authorization Model for Secure Search 审中-公开
    灵活的安全搜索授权模型

    公开(公告)号：US20070214129A1

    公开(公告)日：2007-09-13

    申请号：US11680558

    申请日：2007-02-28

    申请人： Mark Ture ,  Muralidhar Krishnaprasad ,  Mark Davis ,  Cindy Hsin ,  Meeten Bhavsar ,  Hiroshi Koide ,  Joaquin Delgado ,  Chi-Ming Yang ,  Visar Nimani ,  Hui Ouyang ,  Sachin Bhatkar

    发明人： Mark Ture ,  Muralidhar Krishnaprasad ,  Mark Davis ,  Cindy Hsin ,  Meeten Bhavsar ,  Hiroshi Koide ,  Joaquin Delgado ,  Chi-Ming Yang ,  Visar Nimani ,  Hui Ouyang ,  Sachin Bhatkar

    IPC分类号： G06F17/30

    CPC分类号： G06F16/951

    摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety or sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.

    摘要翻译： 灵活可扩展的架构允许跨企业进行安全搜索。 这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。 该架构允许在整个企业中爬行和搜索各种或多个源，无论这些源是否符合常规用户角色模型。 该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。 用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。

    Suggested content with attribute parameterization
    30.
    发明授权
    Suggested content with attribute parameterization 有权
    建议的内容与属性参数化

    公开(公告)号：US08352475B2

    公开(公告)日：2013-01-08

    申请号：US13079434

    申请日：2011-04-04

    申请人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

    发明人： Sachin Bhatkar ,  Meeten Bhavsar ,  Mark Davis ,  Joaquin Delgado ,  Cindy Hsin ,  Muralidhar Krishnaprasad ,  Hui Ouyang

    IPC分类号： G06F7/00 ,  G06F17/30

    CPC分类号： G06F21/6218 ,  G06F21/31 ,  G06F2221/2115 ,  H04L63/105

    摘要： A flexible and extensible architecture allows for secure searching across an enterprise. Such an architecture can provide a simple Internet-like search experience to users searching secure content inside (and outside) the enterprise. The architecture allows for the crawling and searching of a variety of sources across an enterprise, regardless of whether any of these sources conform to a conventional user role model. The architecture further allows for security attributes to be submitted at query time, for example, in order to provide real-time secure access to enterprise resources. The user query also can be transformed to provide for dynamic querying that provides for a more current result list than can be obtained for static queries.

    摘要翻译： 灵活可扩展的架构允许跨企业进行安全搜索。 这样的架构可以为在企业内部（和外部）搜索安全内容的用户提供简单的类似Internet的搜索体验。 该架构允许在整个企业中爬行和搜索各种源，而不管这些源是否符合常规用户角色模型。 该体系结构进一步允许在查询时提交安全属性，例如为了提供对企业资源的实时安全访问。 用户查询也可以被转换以提供动态查询，其提供比静态查询可获得的更多当前结果列表。