公开(公告)号：US20130126885A1

公开(公告)日：2013-05-23

申请号：US13299254

申请日：2011-11-17

申请人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Donald R. Disney ,  Andrew P. Edwards ,  Hui Nie ,  Richard J. Brown ,  Isik C. Kizilyalli ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/761 ,  H01L21/2654 ,  H01L21/266 ,  H01L21/765 ,  H01L29/0619 ,  H01L29/0642 ,  H01L29/0692 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/66136 ,  H01L29/66212 ,  H01L29/6631 ,  H01L29/66909 ,  H01L29/8083 ,  H01L29/872

摘要： A method for fabricating an edge termination structure includes providing a substrate having a first surface and a second surface and a first conductivity type, forming a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the substrate, and forming a second GaN epitaxial layer of a second conductivity type opposite to the first conductivity type. The second GaN epitaxial layer is coupled to the first GaN epitaxial layer. The method also includes implanting ions into a first region of the second GaN epitaxial layer to electrically isolate a second region of the second GaN epitaxial layer from a third region of the second GaN epitaxial layer. The method further includes forming an active device coupled to the second region of the second GaN epitaxial layer and forming the edge termination structure coupled to the third region of the second GaN epitaxial layer.

摘要翻译： 一种用于制造边缘终端结构的方法包括提供具有第一表面和第二表面和第一导电类型的衬底，形成耦合到衬底的第一表面的第一导电类型的第一GaN外延层，并形成第二 与第一导电类型相反的第二导电类型的GaN外延层。 第二GaN外延层耦合到第一GaN外延层。 该方法还包括将离子注入第二GaN外延层的第一区域以将第二GaN外延层的第二区域与第二GaN外延层的第三区域电隔离。 该方法还包括形成耦合到第二GaN外延层的第二区域并形成耦合到第二GaN外延层的第三区域的边缘端接结构的有源器件。

公开(公告)号：US20130126884A1

公开(公告)日：2013-05-23

申请号：US13299227

申请日：2011-11-17

申请人： Linda Romano ,  Andrew P. Edwards ,  Richard J. Brown ,  David P. Bour ,  Hui Nie ,  Isik C. Kizilyalli ,  Thomas R. Prunty ,  Mahdan Raj

发明人： Linda Romano ,  Andrew P. Edwards ,  Richard J. Brown ,  David P. Bour ,  Hui Nie ,  Isik C. Kizilyalli ,  Thomas R. Prunty ,  Mahdan Raj

IPC分类号： H01L29/20 ,  H01L21/302 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L21/30621 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/475 ,  H01L29/66212 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure also includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, and a first metallic structure electrically coupled to the second surface of the III-nitride substrate. The semiconductor structure further includes an AlGaN epitaxial layer coupled to the III-nitride epitaxial layer of the first conductivity type, and a III-nitride epitaxial structure of a second conductivity type coupled to the AlGaN epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.

摘要翻译： 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层和电耦合到III族氮化物衬底的第二表面的第一金属结构。 半导体结构还包括耦合到第一导电类型的III族氮化物外延层的AlGaN外延层和耦合到AlGaN外延层的第二导电类型的III族氮化物外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。

公开(公告)号：US20130075748A1

公开(公告)日：2013-03-28

申请号：US13240877

申请日：2011-09-22

申请人： David P. Bour ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Hui Nie ,  Mahdan Raj

发明人： David P. Bour ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Thomas R. Prunty ,  Linda Romano ,  Andrew P. Edwards ,  Hui Nie ,  Mahdan Raj

IPC分类号： H01L29/207 ,  H01L21/22 ,  H01L21/265

CPC分类号： H01L21/26546 ,  H01L21/0332 ,  H01L21/2258 ,  H01L21/266 ,  H01L21/3245 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66136 ,  H01L29/66143 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872

摘要： A method of forming a doped region in a III-nitride substrate includes providing the III-nitride substrate and forming a masking layer having a predetermined pattern and coupled to a portion of the III-nitride substrate. The III-nitride substrate is characterized by a first conductivity type and the predetermined pattern defines exposed regions of the III-nitride substrate. The method also includes heating the III-nitride substrate to a predetermined temperature and placing a dual-precursor gas adjacent the exposed regions of the III-nitride substrate. The dual-precursor gas includes a nitrogen source and a dopant source. The method further includes maintaining the predetermined temperature for a predetermined time period, forming p-type III-nitride regions adjacent the exposed regions of the III-nitride substrate, and removing the masking layer.

公开(公告)号：US20130056743A1

公开(公告)日：2013-03-07

申请号：US13225345

申请日：2011-09-02

申请人： David P. Bour ,  Linda Romano ,  Thomas R. Prunty ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown

发明人： David P. Bour ,  Linda Romano ,  Thomas R. Prunty ,  Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Richard J. Brown

IPC分类号： H01L29/20 ,  H01L21/283

CPC分类号： H01L29/32 ,  H01L21/02389 ,  H01L21/0254 ,  H01L29/2003 ,  H01L29/6609 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/66446 ,  H01L29/66909 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/861 ,  H01L29/872

摘要： A diode includes a substrate characterized by a first dislocation density and a first conductivity type, a first contact coupled to the substrate, and a masking layer having a predetermined thickness and coupled to the semiconductor substrate. The masking layer comprises a plurality of continuous sections and a plurality of openings exposing the substrate and disposed between the continuous sections. The diode also includes an epitaxial layer greater than 5 μm thick coupled to the substrate and the masking layer. The epitaxial layer comprises a first set of regions overlying the plurality of openings and characterized by a second dislocation density and a second set of regions overlying the set of continuous sections and characterized by a third dislocation density less than the first dislocation density and the second dislocation density. The diode further includes a second contact coupled to the epitaxial layer.

公开(公告)号：US20130032812A1

公开(公告)日：2013-02-07

申请号：US13198659

申请日：2011-08-04

申请人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Isik C. Kizilyalli ,  Hui Nie ,  Andrew P. Edwards ,  Linda Romano ,  David P. Bour ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L29/808 ,  H01L29/20 ,  H01L21/337

CPC分类号： H01L29/66909 ,  H01L21/8252 ,  H01L27/0605 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/66446 ,  H01L29/66924 ,  H01L29/8083

摘要： A vertical III-nitride field effect transistor includes a drain comprising a first III-nitride material, a drain contact electrically coupled to the drain, and a drift region comprising a second III-nitride material coupled to the drain. The field effect transistor also includes a channel region comprising a third III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, a gate region at least partially surrounding the channel region, having a first surface coupled to the drift region and a second surface on a side of the gate region opposing the first surface, and a gate contact electrically coupled to the gate region. The field effect transistor further includes a source coupled to the channel region and a source contact electrically coupled to the source. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride field effect transistor is along the vertical direction, and the channel region extends along at least a portion of the second surface of the gate region.

公开(公告)号：US08933532B2

公开(公告)日：2015-01-13

申请号：US13270641

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/872 ,  H01L29/808 ,  H01L29/66 ,  H01L29/20 ,  H01L29/868 ,  H01L29/40 ,  H01L29/06

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.

公开(公告)号：US08569153B2

公开(公告)日：2013-10-29

申请号：US13307108

申请日：2011-11-30

申请人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

发明人： David P. Bour ,  Thomas R. Prunty ,  Linda Romano ,  Richard J. Brown ,  Isik C. Kizilyalli ,  Hui Nie

IPC分类号： H01L21/20 ,  H01L21/337

CPC分类号： H01L21/02636 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/207 ,  H01L29/66212 ,  H01L29/66446

摘要： A method of growing an n-type III-nitride-based epitaxial layer includes providing a substrate in an epitaxial growth reactor, forming a masking material coupled to a portion of a surface of the substrate, and flowing a first gas into the epitaxial growth reactor. The first gas includes a group III element and carbon. The method further comprises flowing a second gas into the epitaxial growth reactor. The second gas includes a group V element, and a molar ratio of the group V element to the group III element is at least 5,000. The method also includes growing the n-type III-nitride-based epitaxial layer.

摘要翻译： 生长n型III族氮化物基外延层的方法包括在外延生长反应器中提供衬底，形成耦合到衬底表面的一部分的掩模材料，并将第一气体流入外延生长反应器 。 第一种气体包括III族元素和碳。 该方法还包括使第二气体流入外延生长反应器。 第二气体包括V族元素，V族元素与III族元素的摩尔比为至少5,000。 该方法还包括生长n型III族氮化物基外延层。

公开(公告)号：US20130143392A1

公开(公告)日：2013-06-06

申请号：US13312055

申请日：2011-12-06

申请人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

发明人： Linda Romano ,  David P. Bour ,  Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  Thomas R. Prunty

IPC分类号： H01L21/20

CPC分类号： H01L29/475 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66143 ,  H01L29/66212 ,  H01L29/868 ,  H01L29/872

摘要： A method of fabricating a diode in gallium nitride (GaN) materials includes providing a n-type GaN substrate having a first surface and a second surface and forming a n-type GaN drift layer coupled to the first surface of the n-type GaN substrate. The method also includes forming an in-situ SixNy layer coupled to the n-type GaN drift layer opposite the n-type GaN substrate and at least partially removing portions of the SixNy layer and the n-type GaN drift layer to form a plurality of void regions and a remaining portion of the SixNy layer. The method further includes selectively regrowing a p-type epitaxial layer in the void regions.

摘要翻译： 制造氮化镓（GaN）材料中的二极管的方法包括提供具有第一表面和第二表面的n型GaN衬底，并形成耦合到n型GaN衬底的第一表面的n型GaN漂移层 。 该方法还包括形成与n型GaN衬底相对的n型GaN漂移层耦合的原位SixNy层，并且至少部分去除SixNy层和n型GaN漂移层的部分以形成多个 空隙区域和SixNy层的剩余部分。 该方法还包括在空隙区域中选择性地重新生长p型外延层。

公开(公告)号：US20130087879A1

公开(公告)日：2013-04-11

申请号：US13270641

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/47 ,  H01L21/20

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate characterized by a first conductivity type and having a first side and a second side opposing the first side, a III-nitride epitaxial layer of the first conductivity type coupled to the first side of the III-nitride substrate, and a plurality of III-nitride epitaxial structures of a second conductivity type coupled to the III-nitride epitaxial layer. The semiconductor structure further includes a III-nitride epitaxial formation of the first conductivity type coupled to the plurality of III-nitride epitaxial structures, and a metallic structure forming a Schottky contact with the III-nitride epitaxial formation and coupled to at least one of the plurality of III-nitride epitaxial structures.

公开(公告)号：US09224828B2

公开(公告)日：2015-12-29

申请号：US13270606

申请日：2011-10-11

申请人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

发明人： Andrew Edwards ,  Hui Nie ,  Isik C. Kizilyalli ,  Richard J. Brown ,  David P. Bour ,  Linda Romano ,  Thomas R. Prunty

IPC分类号： H01L29/76 ,  H01L29/66 ,  H01L29/808 ,  H01L29/868 ,  H01L29/872 ,  H01L29/06 ,  H01L29/20

CPC分类号： H01L29/66143 ,  H01L21/26546 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/0692 ,  H01L29/08 ,  H01L29/2003 ,  H01L29/404 ,  H01L29/66083 ,  H01L29/66204 ,  H01L29/66212 ,  H01L29/66416 ,  H01L29/66924 ,  H01L29/8083 ,  H01L29/868 ,  H01L29/872

摘要： A semiconductor structure includes a III-nitride substrate with a first side and a second side opposing the first side. The III-nitride substrate is characterized by a first conductivity type and a first dopant concentration. The semiconductor structure further includes a III-nitride epitaxial layer of the first conductivity type coupled to the first surface of the III-nitride substrate, a first metallic structure electrically coupled to the second surface of the III-nitride substrate, and a III-nitride epitaxial structure of a second conductivity type coupled to the III-nitride epitaxial layer. The III-nitride epitaxial structure comprises at least one edge termination structure.

摘要翻译： 半导体结构包括具有第一侧和与第一侧相对的第二侧的III族氮化物衬底。 III族氮化物衬底的特征在于第一导电类型和第一掺杂剂浓度。 半导体结构还包括耦合到III族氮化物衬底的第一表面的第一导电类型的III族氮化物外延层，电耦合到III族氮化物衬底的第二表面的第一金属结构和III族氮化物 耦合到III族氮化物外延层的第二导电类型的外延结构。 III族氮化物外延结构包括至少一个边缘端接结构。