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43 条记录 (耗时 0.042 秒)

    Process to open connection vias on a planarized surface
    21.
    发明授权
    Process to open connection vias on a planarized surface 有权
    在平坦化表面上打开连接通孔的过程

    公开(公告)号：US07523550B2

    公开(公告)日：2009-04-28

    申请号：US11411555

    申请日：2006-04-25

    申请人： Amanda Baer ,  Hamid Balamane ,  Michael Feldbaum ,  Ming Jiang ,  Aron Pentek

    发明人： Amanda Baer ,  Hamid Balamane ,  Michael Feldbaum ,  Ming Jiang ,  Aron Pentek

    IPC分类号： H01K3/10

    CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/3116 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49044 ,  Y10T29/49126 ,  Y10T29/49139 ,  Y10T29/49153 ,  Y10T29/49155 ,  Y10T29/49165 ,  Y10T29/49169

    摘要： A method for forming a via in an alumina protective layer on a structure such as a magnetic write head for use in perpendicular magnetic recording. A structure such as a magnetic pole, and or magnetic trailing shield, is formed over a substrate and is covered with a thick layer of alumina. The alumina layer can then be planarized by a chemical mechanical polishing process (CMP) and then a mask structure, such as a photoresist mask, is formed over the alumina layer. The mask structure is formed with an opening disposed over the contact pad. A reactive ion mill is then performed to remove portions of the alumina layer that are exposed at the opening in the mask, thereby forming a via in the alumina layer.

    摘要翻译： 在用于垂直磁记录的诸如磁写头的结构上的氧化铝保护层中形成通孔的方法。 诸如磁极和/或磁性后屏蔽的结构形成在衬底上并被厚层氧化铝覆盖。 然后可以通过化学机械抛光工艺（CMP）将氧化铝层平坦化，然后在氧化铝层上形成诸如光致抗蚀剂掩模的掩模结构。 掩模结构形成有设置在接触垫上方的开口。 然后执行反应离子研磨机以除去在掩模中的开口处暴露的部分氧化铝层，从而在氧化铝层中形成通孔。

    METHOD FOR MAKING A PERPENDICULAR MAGNETIC RECORDING WRITE HEAD
    22.
    发明申请
    METHOD FOR MAKING A PERPENDICULAR MAGNETIC RECORDING WRITE HEAD 失效
    一种完整的磁记录写头的方法

    公开(公告)号：US20070245544A1

    公开(公告)日：2007-10-25

    申请号：US11380189

    申请日：2006-04-25

    申请人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Aron Pentek

    发明人： Donald Allen ,  Amanda Baer ,  Michael Feldbaum ,  Hung-Chin Guthrie ,  Aron Pentek

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3163 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  Y10T29/49021 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A method for making a write pole in a perpendicular magnetic recording write head uses a metal mask to pattern the primary resist and only ion milling during the subsequent patterning steps. A layer of primary resist is deposited over the magnetic write pole material and a metal mask layer is deposited on the primary resist layer. An imaging resist layer is formed on the metal mask layer and lithographically patterned generally in the desired shape of the write pole. Ion milling without a reactive gas is then performed over the imaging resist pattern to pattern the underlying metal mask layer, which is then used as the mask to define the shape of the primary resist pattern. Ion milling with oxygen is then performed over the metal mask pattern to pattern the underlying primary resist. Ion milling without a reactive gas is then performed over the primary resist pattern to form the underlying write pole.

    摘要翻译： 用于在垂直磁记录写头中制作写极的方法使用金属掩模对主抗蚀剂进行图案化，并且在随后的图案化步骤期间仅使用离子铣削。 一层主抗蚀剂沉积在磁写磁极材料上，并且金属掩模层沉积在主抗蚀剂层上。 在金属掩模层上形成成像抗蚀剂层，并且通常以写入极的所需形状进行光刻图案化。 然后在成像抗蚀剂图案上进行无反应气体的离子研磨以对下面的金属掩模层进行图案化，然后将其用作掩模以限定主抗蚀剂图案的形状。 然后在金属掩模图案上进行用氧离子研磨以对下面的主抗蚀剂进行图案化。 然后在主抗蚀剂图案上执行没有反应气体的离子研磨以形成下面的写极。

    Method for enhancing wafer alignment marks
    25.
    发明授权
    Method for enhancing wafer alignment marks 失效
    增强晶圆对准标记的方法

    公开(公告)号：US07588884B2

    公开(公告)日：2009-09-15

    申请号：US10857151

    申请日：2004-05-28

    申请人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Siyang Zhang ,  Yi Zheng

    发明人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Siyang Zhang ,  Yi Zheng

    IPC分类号： G03F1/00

    CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708

    摘要： A method of enhancing alignment marks defined in a relatively thin layer on a wafer by etching the alignment marks into an underlying alignment mark transfer layer is described. The target area for the alignment marks is prepared by depositing material for the transfer layer. In alternative embodiments an oversized trench is formed in the target area prior to the deposition of the transfer layer. The alignment marks can fabricated in the layer(s) deposited by the existing process or alternatively, the original layers can be removed and replaced with a layer of material selected to have comparable etching properties (definition layer).

    摘要翻译： 描述了通过将对准标记蚀刻到下面的对准标记转印层中来增强在晶片上相对薄的层中限定的对准标记的方法。 通过沉积用于转印层的材料来制备对准标记的目标区域。 在替代实施例中，在沉积转移层之前，在目标区域中形成尺寸过大的沟槽。 对准标记可以在通过现有工艺沉积的层中制造，或者替代地，原始层可被移除并被选择为具有相当的蚀刻性质（定义层）的材料层替代。

    Method for enhancing wafer alignment marks
    26.
    发明申请
    Method for enhancing wafer alignment marks 失效
    增强晶圆对准标记的方法

    公开(公告)号：US20050266357A1

    公开(公告)日：2005-12-01

    申请号：US10857151

    申请日：2004-05-28

    申请人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Zhang ,  Yi Zheng

    发明人： Amanda Baer ,  Nian-Xiang Sun ,  Sue Zhang ,  Yi Zheng

    IPC分类号： G03F7/00 ,  G03F9/00

    CPC分类号： G03F9/7084 ,  G03F9/7076 ,  G03F9/708

    摘要： A method of enhancing alignment marks defined in a relatively thin layer on a wafer by etching the alignment marks into an underlying alignment mark transfer layer is described. The target area for the alignment marks is prepared by depositing material for the transfer layer. In alternative embodiments an oversized trench is formed in the target area prior to the deposition of the transfer layer. The alignment marks can fabricated in the layer(s) deposited by the existing process or alternatively, the original layers can be removed and replaced with a layer of material selected to have comparable etching properties (definition layer).

    摘要翻译： 描述了通过将对准标记蚀刻到下面的对准标记转印层中来增强在晶片上相对薄的层中限定的对准标记的方法。 通过沉积用于转印层的材料来制备对准标记的目标区域。 在替代实施例中，在沉积转移层之前，在目标区域中形成尺寸过大的沟槽。 对准标记可以在通过现有工艺沉积的层中制造，或者替代地，原始层可被移除并被选择为具有相当的蚀刻性质（定义层）的材料层替代。

    METHODS FOR CREATING A STEPPED PERPENDICULAR MAGNETIC POLE VIA MILLING AND/OR METAL LIFTOFF
    27.
    发明申请
    METHODS FOR CREATING A STEPPED PERPENDICULAR MAGNETIC POLE VIA MILLING AND/OR METAL LIFTOFF 失效
    用于通过铣削和/或金属提升来形成步进的贯通磁体的方法

    公开(公告)号：US20100159154A1

    公开(公告)日：2010-06-24

    申请号：US12341866

    申请日：2008-12-22

    申请人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Vladimir Nikitin ,  Trevor W. Olson ,  John Bruce Piggott, JR. ,  Yuan Yao

    发明人： Amanda Baer ,  Wen-Chien David Hsiao ,  John I. Kim ,  Vladimir Nikitin ,  Trevor W. Olson ,  John Bruce Piggott, JR. ,  Yuan Yao

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163

    摘要： A method in one embodiment includes forming a layer of a nonmagnetic material above an upper surface of a substrate; forming a resist structure above the layer of nonmagnetic material, wherein the resist structure has an undercut; removing a portion of the layer of nonmagnetic material not covered by the resist structure; depositing a layer of magnetic material above the substrate adjacent a remaining portion of the layer of nonmagnetic material such that at least portions of the layer of magnetic material and the remaining portion of the layer of nonmagnetic material lie in a common plane; removing the resist structure; and forming a write pole above the layer of magnetic material and the remaining portion of the layer of nonmagnetic material. Additional methods are also presented.

    摘要翻译： 一个实施例中的方法包括在衬底的上表面上方形成非磁性材料层; 在非磁性材料层之上形成抗蚀剂结构，其中抗蚀剂结构具有底切; 去除未被抗蚀剂结构覆盖的非磁性材料层的一部分; 在所述基板的上方邻近所述非磁性材料层的剩余部分沉积一层磁性材料，使得所述磁性材料层和所述非磁性材料层的剩余部分的至少部分位于公共平面中; 去除抗蚀剂结构; 以及在磁性材料层和非磁性材料层的剩余部分之上形成写入极。 还介绍了其他方法。

    Enhanced planarization liftoff structure and method for making the same
    28.
    发明申请
    Enhanced planarization liftoff structure and method for making the same 有权
    增强平面化提升结构及其制作方法

    公开(公告)号：US20080151422A1

    公开(公告)日：2008-06-26

    申请号：US11644159

    申请日：2006-12-22

    申请人： Jeffrey S. Lille ,  Amanda Baer ,  John Jaekoyun Yang

    发明人： Jeffrey S. Lille ,  Amanda Baer ,  John Jaekoyun Yang

    IPC分类号： G11B5/127 ,  B44C1/22

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3173

    摘要： Systems and methods for enhanced planarization liftoff structures. In accordance with a first method embodiment, a method for manufacturing a pole tip for magnetic recording comprises accessing a wafer comprising a plurality of pole tips and a plurality of pole tip masks corresponding to the plurality of pole tips. Non magnetic material is filled adjacent to the plurality of pole tips. Material adjacent to the plurality of pole tips is etched. Subsequent to the etching, the wafer is planarized to a level equal to or higher than a level of the trailing edges of the plurality of pole tips. The enhanced liftoff structure enables decreased planarization processing, resulting in a decreased process window. As a beneficial result, manufacturing throughput and quality are improved.

    摘要翻译： 用于增强平面化起飞结构的系统和方法。 根据第一方法实施例，一种用于制造用于磁记录的极尖的方法包括访问包括多个极尖的晶片和与多个极尖相对应的多个极尖端掩模。 非磁性材料与多个极尖相邻地填充。 蚀刻与多个极尖相邻的材料。 在蚀刻之后，晶片被平坦化到等于或高于多个极尖的后缘的水平的水平。 增强的提升结构使平坦化处理减少，从而减少了处理窗口。 作为有益的结果，提高了生产量和质量。