摘要:
The memory device selects any one of a first memory cell and a second memory cell based on a number of times that the first memory cell is erased, an elapsed time after the first memory cell is erased, a number of times that the second memory cell is erased, and an elapsed time after the second memory cell is erased, and program data in the selected memory cell. The memory device may improve distribution of threshold voltage of memory cells and endurance of the memory cells.
摘要:
The method of programming data in a memory device includes applying a plurality of pulses to a plurality of memory cells, at least one of the plurality of pulses being a positive pulse having a positive voltage and at least one of the plurality of pulses being a negative pulse having a negative voltage, and a temporal interval existing between subsequent pulses of the plurality of pulses, and controlling at least one of a width of at least one of the temporal intervals and a magnitude of at least one of the plurality of pulses.
摘要:
A decoder includes multiple decoder stages and a controller. The decoder stages perform decoding operations with respect to a received signal using corresponding different decoding algorithms. The controller determines whether the decoding operation performed by one of the decoder stages with respect to the received signal is successful, and controls the decoding operation of each of the other decoder stages in response to a result of the determination.
摘要:
An apparatus and a method for detecting data stored in a memory cell based on channel information of the memory cell are provided. The data detecting apparatus may include a voltage comparison unit that compares a plurality of soft decision reference voltages between neighboring hard decision reference voltages with a threshold voltage of a memory cell to determine a region including the threshold voltage, and a data detection unit that detects data stored in the memory cell based on channel information of the memory cell according to the region. The data detecting apparatus may further include a reference voltage determination unit that determines the plurality of soft decision reference voltages based on the channel information of the memory cell.
摘要:
Disclosed are a memory device and a data decision method. The memory device may include a memory cell array, and a decision unit configured to read first data from the memory cell array via a first channel, perform at least one of a hard and soft decision on the first data using a first number of decision levels set based on characteristics of the first channel, read second data from the memory cell array via a second channel, and perform a soft decision on the second data using a second number of decision levels set based on characteristics of the second channel.
摘要:
Example embodiments may provide a memory device and memory data reading method. The memory device according to example embodiments may include a multi-bit cell array, an error detector which may read a first data page from a memory page in the multi-bit cell array and may detect an error-bit of the first data page, and an estimator which may identify a multi-bit cell where the error-bit is stored and may estimate data stored in the identified multi-bit cell among data of a second data page. Therefore, the memory device and memory data reading method may have an effect of reducing an error when reading data stored in the multi-bit cell and monitoring a state of the multi-bit cell without additional overhead.
摘要:
A method for fabricating a semiconductor device capable of preventing a device failure is provided. The method includes: forming an insulating layer with a contact hole on a semiconductor substrate; forming a seed layer on the contact hole through electroless plating process; and forming a metal interconnection in the contact hole on the seed layer.
摘要:
The present invention discloses to a method of forming a gate electrode, the method according to the present invention comprises the steps of forming a lower amorphous silicon layer using silane (SiH4) gas and nitrous oxide (N2O) gas; forming an upper amorphous silicon layer on the lower amorphous silicon layer; and crystallizing the lower and upper amorphous silicon layers through a thermal process.
摘要:
An encoding system for encoding error control codes may include a first encoder configured to encode an input bit stream to generate first bit streams of C-bits, where c is an integer greater than zero, and a second encoder may be configured to receive the first bit streams and shuffle data of the received first bit streams to generate second bit streams. The data shuffling of the first bit streams may adjust an error distribution of the second bit streams. An encoding method may include encoding an input bit stream to generate first bit streams of C-bits, and receiving the first bit streams and shuffling data of the received first bit streams to generate second bit streams. An error distribution of the second bit streams may be adjusted based on the data shuffling.
摘要:
Disclosed is a method of sequencing character information in order to increase precision of character recognition. The method includes: a pre-processing that extracts character information from an image to binarize the extracted character information through a predetermined threshold and extracts and thins a center line of the binarized character information; normalizing the pre-processed character information to character information according to a predetermined criteria; and sequencing the normalized character information using structural features including an end point or a divergence point of the character information. The present invention suggests an angle normalization method of input character information, a structural feature position determining method, and a structural feature numeral string generating method to strongly recognize characters configured by various fonts obtained from a natural scene regardless of an angle or a size of the characters.