公开(公告)号：US11538687B2

公开(公告)日：2022-12-27

申请号：US16713189

申请日：2019-12-13

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Sharad N. Yedave ,  Joseph R. Despres ,  Joseph D. Sweeney

IPC: H01L21/265 ,  H01J37/317 ,  H01J37/32

Abstract: A system and method for fluorine ion implantation is described, which includes a fluorine gas source used to generate a fluorine ion species for implantation to a subject, and an arc chamber that includes one or more non-tungsten materials (graphite, carbide, fluoride, nitride, oxide, ceramic). The system minimizes formation of tungsten fluoride during system operation, thereby extending source life and promoting improved system performance. Further, the system can include a hydrogen and/or hydride gas source, and these gases can be used along with the fluorine gas to improve source lifetime and/or beam current.

公开(公告)号：US20220186358A1

公开(公告)日：2022-06-16

申请号：US17688613

申请日：2022-03-07

Applicant: ENTEGRIS, INC.

Inventor： Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Joseph D. Sweeney ,  Sharad N. Yedave

IPC: C23C14/48 ,  C23C14/56 ,  H01J37/08 ,  H01J37/317

Abstract: The current disclosure is directed to methods and assemblies configured to deliver a mixture of germanium tetrafluoride (GeF4) and hydrogen (H2) gases to an ion implantation apparatus, so H2 is present in an amount in the range of 25%-67% (volume) of the gas mixture, or the GeF4 and H2 are present in a volume ratio (GeF4:H2) in the range of 3:1 to 33:67. The use of the H2 gas in an amount in mixture or relative to the GeF4 gas prevents the volatilization of cathode material, thereby improving performance and lifetime of the ion implantation apparatus. Gas mixtures according to the disclosure also result in a significant Ge+ current gain and W+ peak reduction during au ion implantation procedure.

公开(公告)号：US10354877B2

公开(公告)日：2019-07-16

申请号：US15928645

申请日：2018-03-22

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Edward A. Sturm ,  Ying Tang ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Steven G. Sergi ,  Barry Lewis Chambers

IPC: H01J37/08 ,  H01L31/18 ,  H01L33/00 ,  H01J37/317 ,  H01L21/265

Abstract: Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.

公开(公告)号：US20190103275A1

公开(公告)日：2019-04-04

申请号：US16149792

申请日：2018-10-02

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Sharad N. Yedave ,  Joseph D. Sweeney ,  Barry Lewis Chambers ,  Ying Tang

IPC: H01L21/265 ,  H01L31/18 ,  H01J37/244 ,  H01J37/08 ,  H01J37/317

Abstract: Apparatus and method for use of solid dopant phosphorus and arsenic sources and higher order phosphorus or arsenic implant source material are described. In various implementations, solid phosphorus-comprising or arsenic-comprising materials are provided in the ion source chamber for generation of dimer or tetramer implant species. In other implementations, the ion implantation is augmented by use of a reactor for decomposing gaseous phosphor-us-comprising or arsenic-comprising materials to form gas phase dimers and tetramers for ion implantation.

公开(公告)号：US09831063B2

公开(公告)日：2017-11-28

申请号：US14768758

申请日：2014-03-03

Applicant: Entegris, Inc.

Inventor： Oleg Byl ,  Joseph D. Sweeney ,  Ying Tang ,  Richard S. Ray

IPC: H01J37/00 ,  H01J37/317 ,  H01J37/08 ,  H01L21/22 ,  C23C14/48

CPC classification number: H01J37/3171 ,  C23C14/48 ,  H01J37/08 ,  H01J2237/006 ,  H01J2237/08 ,  H01L21/2225

Abstract: Ion implantation compositions, systems and methods are described, for implantation of dopant species. Specific selenium dopant source compositions are described, as well as the use of co-flow gases to achieve advantages in implant system characteristics such as recipe transition, beam stability, source life, beam uniformity, beam current, and cost of ownership.

公开(公告)号：US20160172164A1

公开(公告)日：2016-06-16

申请号：US14906537

申请日：2014-07-21

Applicant: Entegris, Inc.

Inventor： Joseph D. Sweeney ,  Edward E. Jones ,  Oleg Byl ,  Ying Tang ,  Joseph R. Despres ,  Steven E. Bishop

IPC: H01J37/32

CPC classification number: H01J37/32449 ,  H01J37/3171 ,  H01J2237/002 ,  H01J2237/006 ,  H01J2237/08 ,  H01J2237/24564 ,  H01J2237/3365

Abstract: Fluid storage and dispensing systems and methods for remote delivery of fluids are described, for providing fluid from a source vessel at lower voltage to one or more fluid-utilizing tools at higher voltage, so that the fluid crosses the associated voltage gap without arcing, discharge, premature ionization, or other anomalous behavior, and so that when multiple fluid-utilizing tools are supplied by the remote source vessel, fluid is efficiently supplied to each of the multiple tools at suitable pressure level during the independent operation of others of the multiple vessels.

Abstract translation: 描述用于远程输送流体的流体存储和分配系统和方法，用于将来自较低电压的源容器的流体提供给在较高电压下的一个或多个流体利用工具，使得流体跨过相关联的电压间隙而没有电弧，放电 过早电离或其他异常行为，并且当多个流体利用工具由远程源容器供应时，在多个容器的其他人的独立操作期间，以适当的压力水平将流体有效地供给到多个工具中的每一个 。

公开(公告)号：US20240379320A1

公开(公告)日：2024-11-14

申请号：US18657535

申请日：2024-05-07

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph R. Despres ,  Nicholas Harris ,  Edward E. Jones

IPC: H01J37/08 ,  H01J37/317

Abstract: An ion implantation system and related methods are provided herein. An ion implantation system comprises a gas supply assembly comprising at least one gas supply vessel in fluid communication with an arc chamber. The gas supply assembly is configured to supply a gas component comprising at least one of GeF4, GeH4, H2, a fluorine-containing gas, or any combination thereof. When the gas component is supplied from the at least one gas supply vessel to the arc chamber for implantation into a substrate, a beam current of Ge ions generated from the gas component is greater than a beam current of Ge ions generated from a control gas component.

公开(公告)号：US20170330726A1

公开(公告)日：2017-11-16

申请号：US15593486

申请日：2017-05-12

Applicant: Entegris, Inc.

Inventor： Barry Lewis Chambers ,  Biing-Tsair Tien ,  Joseph D. Sweeney ,  Ying Tang ,  Oleg Byl ,  Steven E. Bishop ,  Sharad N. Yedave

IPC: H01J37/317 ,  C09D5/24 ,  C09D1/00 ,  H01J37/32 ,  H01L21/67 ,  H01L21/265

CPC classification number: H01J37/3171 ,  C09D1/00 ,  C09D5/24 ,  H01J37/026 ,  H01J37/3244 ,  H01J2237/006 ,  H01J2237/022 ,  H01L21/265 ,  H01L21/67213

Abstract: Compositions, methods, and apparatus are described for carrying out nitrogen ion implantation, which avoid the incidence of severe glitching when the nitrogen ion implantation is followed by another ion implantation operation susceptible to glitching, e.g., implantation of arsenic and/or phosphorus ionic species. The nitrogen ion implantation operation is advantageously conducted with a nitrogen ion implantation composition introduced to or formed in the ion source chamber of the ion implantation system, wherein the nitrogen ion implantation composition includes nitrogen (N2) dopant gas and a glitching-suppressing gas including one or more selected from the group consisting of NF3, N2F4, F2, SiF4, WF6, PF3, PF5, AsF3, AsF5, CF4 and other fluorinated hydrocarbons of CxFy (x≧1, y≧1) general formula, SF6, HF, COF2, OF2, BF3, B2F4, GeF4, XeF2, O2, N2O, NO, NO2, N2O4, and O3, and optionally hydrogen-containing gas, e.g., hydrogen-containing gas including one or more selected from the group consisting of H2, NH3, N2H4, B2H6, AsH3, PH3, SiH4, Si2H6, H2S, H2Se, CH4 and other hydrocarbons of CxHy (x≧1, y≧1) general formula and GeH4.

公开(公告)号：US20150357152A1

公开(公告)日：2015-12-10

申请号：US14827783

申请日：2015-08-17

Applicant: Entegris, Inc.

Inventor： Edward E. Jones ,  Sharad N. Yedave ,  Ying Tang ,  Barry Lewis Chambers ,  Robert Kaim ,  Joseph D. Sweeney ,  Oleg Byl ,  Peng Zou

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01L21/265 ,  C23C14/48 ,  C23C14/52 ,  H01J37/08 ,  H01J37/3171 ,  H01J37/32055 ,  H01J37/32412 ,  H01J37/32449 ,  H01J2237/006 ,  H01J2237/022

Abstract: An ion implantation system and method, providing cooling of dopant gas in the dopant gas feed line, to combat heating and decomposition of the dopant gas by arc chamber heat generation, e.g., using boron source materials such as B2F4 or other alternatives to BF3. Various arc chamber thermal management arrangements are described, as well as modification of plasma properties, specific flow arrangements, cleaning processes, power management, equilibrium shifting, optimization of extraction optics, detection of deposits in flow passages, and source life optimization, to achieve efficient operation of the ion implantation system.

Abstract translation: 一种离子注入系统和方法，用于提供掺杂剂气体进料管线中的掺杂气体的冷却，以通过例如使用诸如B2F4的硼源材料或BF3的其他替代物来通过电弧室发热来防止掺杂气体的加热和分解。 描述了各种电弧室热管理布置，以及等离子体性质，特定流量布置，清洁过程，功率管理，平衡偏移，提取光学优化，流动通道沉积物检测和源寿命优化等方面的改进，以实现高效率 离子注入系统的操作。

公开(公告)号：US20240043988A1

公开(公告)日：2024-02-08

申请号：US18216330

申请日：2023-06-29

Applicant: ENTEGRIS, INC.

Inventor： Ying Tang ,  Joseph R. Despres ,  Edward E. Jones ,  Joseph D. Sweeney

IPC: C23C14/48 ,  C23C14/00 ,  C23C14/34

CPC classification number: C23C14/48 ,  C23C14/0057 ,  C23C14/0063 ,  C23C14/3414

Abstract: The present disclosure relates to an ion implantation tool source and gas delivery system. The system can include a gas source comprising one or more gas supply vessels, an ion implanter arc chamber connected to the gas source, and a gallium target contained within the ion implanter arc chamber. The one or more gas supply vessels can supply a mixture of gases of hydrogen and fluoride. The hydrogen can be from 5% to 60% of the mixture of gases.